公开(公告)号：US5560241A

公开(公告)日：1996-10-01

申请号：US484258

申请日：1995-06-07

申请人： Shuichi Satoh ,  Kazuwo Tsuji ,  Akito Yoshida ,  Nobuo Urakawa

发明人： Shuichi Satoh ,  Kazuwo Tsuji ,  Akito Yoshida ,  Nobuo Urakawa

IPC分类号： B21C3/02 ,  B28D5/00 ,  C30B33/00 ,  H01L23/373

CPC分类号： B21C3/025 ,  B28D5/0011 ,  C30B29/04 ,  C30B33/00 ,  H01L23/3732 ,  H01L2924/0002

摘要： A synthetic single crystal diamond for wire drawing die; the process of manufacturing it and a wire drawing die to utilize it are disclosed. At least one plane of the diamond for wire drawing die is a cleavage plane of (111) faces, and the drawing hole of wire drawing die lies vertical to the cleavage plane. The diamond for the wire drawing die is produced by providing a synthetic single crystal having 20-400 ppm nitrogen of Ib type diamond. A groove is made on the diamond surface parallel to (111) faces employing energy beams such as a laser beam, an ion beam and an electron beam. A wedge is struck into the groove to cleave the diamond, and a plate is obtained. Furthermore, the plate is divided into polyhedrons, employing either an energy beam or a blade. The cleavage plane of the polyhedron is almost parallel to the (111) faces of crystal, therefore the cleavage plane is used as the standard plane to build the drawing hole.

摘要翻译： 用于拉丝模的合成单晶金刚石; 公开了其制造过程和使用它的拉丝模具。 用于拉丝模的金刚石的至少一个平面是（111）面的解理面，拉丝模的拉丝孔垂直于解理面。 用于拉丝模具的金刚石是通过提供具有20-400ppm的Ib型金刚石氮的合成单晶生产的。 在使用诸如激光束，离子束和电子束的能量束的平行于（111）面的金刚石表面上形成凹槽。 将楔形物撞入槽中以切割金刚石，并获得板。 此外，板被分为多面体，使用能量束或叶片。 多面体的解理平面几乎平行于晶体的（111）面，因此使用解理面作为标准平面来构建绘图孔。

公开(公告)号：US5245189A

公开(公告)日：1993-09-14

申请号：US851942

申请日：1992-03-13

申请人： Shuichi Satoh ,  Yasushi Goda ,  Kazuwo Tsuji

发明人： Shuichi Satoh ,  Yasushi Goda ,  Kazuwo Tsuji

IPC分类号： G01N21/03 ,  G01N21/35 ,  G01N21/55 ,  G02B1/02

CPC分类号： G02B1/02 ,  G01N21/3563 ,  G01N2021/0389 ,  G01N21/0317

摘要： An infrared optical part comprised of a synthetic diamond single crystal, and a method of making the same. The infrared optical part is comprised of a synthetic diamond having a nitrogen content of not more than 5 ppm and a boron content of not more than 3 ppm, wherein the parallelism between its light incident and reflecting surfaces is not more than one minute. The infrared optical part is used as a window member in infrared spectral analysis. It is also used in the form of a pair of anvils for holding a sample therebetween in connection with the measurement of transmitted light that has passed through the sample after the sample is compressed. The part is also used in the form of an infrared ATR prism. The method involves the steps of abrading an infrared optical part having the above mentioned nitrogen and boron content by a grinder, measuring the parallelism between the light incident and reflecting surfaces of the part by laser light, and smoothing the grinding apparatus, whereby the parallelism is set to a level of not more than 2.91.times.10.sup.-4 radians.

公开(公告)号：US4950463A

公开(公告)日：1990-08-21

申请号：US272725

申请日：1988-11-17

申请人： Shuichi Satoh ,  Kazuwo Tsuji

发明人： Shuichi Satoh ,  Kazuwo Tsuji

IPC分类号： C01B31/06 ,  B28D5/00 ,  C30B33/00

CPC分类号： B28D5/00 ,  C30B29/04 ,  C30B33/00

摘要： A purple diamond has an absorption coefficient of the Ib type nitrogen at 500 nm, within the range of 0.2-2 cm.sup.-1, an absorption coefficient of the N-V center at an absorption peak of 570 nm, within the range of 0.3-10 cm.sup.-1, and absorption coefficients of the GR1 center, H2 center, H3 center, and H4 center which are less than 0.2 cm.sup.-1 in the visible region. A method of producing such a purple diamond uses as a starting material an Ib type artificial synthetic diamond crystal wherein the Ib type nitrogen content in the crystal is within the range of 8.times.10.sup.17 -1.4.times.10.sup.19 atoms/cm.sup.3, such a starting material is subjected to an electron beam irradiation of 5.times.10.sup.16 -2.times.10.sup.18 electrons/cm.sup.2 at 2-4 MeV, and then annealing the irradiated diamond in a vacuum of less than 10.sup.-2 Torr, at a temperature of 800.degree.-1100.degree. C. for more than 25 hours.

公开(公告)号：US4949347A

公开(公告)日：1990-08-14

申请号：US306813

申请日：1989-02-03

申请人： Shuichi Satoh ,  Kazuwo Tsuji ,  Takeru Nakashima

发明人： Shuichi Satoh ,  Kazuwo Tsuji ,  Takeru Nakashima

IPC分类号： H01S3/08 ,  C30B33/00 ,  H01S3/094 ,  H01S3/16

CPC分类号： H01S3/16 ,  C30B29/04 ,  C30B33/00

摘要： A diamond laser formed of a synthetic diamond provides a high output power and a variable wavelength in the near infrared region. The maximum value of the optical density of H2 centers in the direction of the pumping light is in the range of 0.01 to 4. Laser action is caused in the range of 1000 to 1400 nm by an external pumping light at 650 to 950 nm. Such a diamond laser is produced by preparing a synthetic Ib type diamond having a nitrogen concentration within the range of 1.times.10.sup.17 to 8.5 10.sup.19 atoms/cm.sup.3, subjecting this synthetic diamond to an electron irradiation with a dose of not less than 5.times.10.sup.17 electrons/cm.sup.2, and heat-treating the synthetic diamond in a vacuum of not more than 1 Torr or in an inert gas atmosphere and at a temperature within the range of 1400.degree. to 1850.degree. C. If the threshold value of the pumping light intensity necessary for causing laser action is Ith then, to make the pumping light intensity I greater than Ith throughout the laser crystal, it is important, that the maximum value of the optical density of H2 is within the range between 0.01 and 4.

公开(公告)号：US4836881A

公开(公告)日：1989-06-06

申请号：US192046

申请日：1988-05-09

申请人： Shuichi Satoh ,  Kazuwo Tsuji

发明人： Shuichi Satoh ,  Kazuwo Tsuji

IPC分类号： C30B29/04 ,  B01J3/06

CPC分类号： B01J3/062 ,  B01J2203/0655 ,  B01J2203/068 ,  Y10S117/902

摘要： A process for synthesizing a large diamond having a diameter of 8 mm or more by the temperature gradient method, wherein a (111) or (100) surface of a seed crystal having a diameter of 3 mm or more is used as a growing surface, the entire area of the growing surface is first dissolved in the diamond-stable region before crystal growth is started, the crystal growth is effected using a plug of a solvent in which the height of the central portion thereof is higher than the height of the peripheral portion thereof, the plug of a solvent has a planar or curved surface on the side where the plug of a solvent contacts a carbon source during the crystal growth, and the crystal growth is effected under such pressure and temperature conditions that the growth of the (111) or (100) surface is predominant.

公开(公告)号：US6007916A

公开(公告)日：1999-12-28

申请号：US247601

申请日：1994-05-23

申请人： Shuichi Satoh ,  Kazuwo Tsuji ,  Akito Yoshida ,  Nobuo Urakawa

发明人： Shuichi Satoh ,  Kazuwo Tsuji ,  Akito Yoshida ,  Nobuo Urakawa

IPC分类号： B21C3/02 ,  B28D5/00 ,  C30B33/00 ,  C01B31/06

CPC分类号： B21C3/025 ,  B28D5/0011 ,  C30B29/04 ,  C30B33/00 ,  H01L2924/0002 ,  Y10T428/30

摘要： A synthetic single crystal diamond for wire drawing die; the process of manufacturing it and a wire drawing die to utilize it are disclosed. At least one plane of the diamond for wire drawing die is a cleavage plane of (111) faces, and the drawing hole of wire drawing die lies vertical to the cleavage plane.The diamond for the wire drawing die is produced by providing a synthetic single crystal having 20-400 ppm nitrogen of Ib type diamond. A groove is made on the diamond surface parallel to (111) faces employing energy beams such as a laser beam, an ion beam and an electron beam. A wedge is struck into the groove to cleave the diamond, and a plate is obtained. Furthermore, the plate is divided into polyhedrons, employing either an energy beam or a blade. The cleavage plane of the polyhedron is almost parallel to the (111) faces of crystal, therefore the cleavage plane is used as the standard plane to build the drawing hole.

摘要翻译： 用于拉丝模的合成单晶金刚石; 公开了其制造过程和使用它的拉丝模具。 用于拉丝模的金刚石的至少一个平面是（111）面的解理面，拉丝模的拉丝孔垂直于解理面。 用于拉丝模具的金刚石是通过提供具有20-400ppm的Ib型金刚石氮的合成单晶生产的。 在使用诸如激光束，离子束和电子束的能量束的平行于（111）面的金刚石表面上形成凹槽。 将楔形物撞入槽中以切割金刚石，并获得板。 此外，板被分为多面体，使用能量束或叶片。 多面体的解理平面几乎平行于晶体的（111）面，因此使用解理面作为标准平面来构建绘图孔。

公开(公告)号：US4985226A

公开(公告)日：1991-01-15

申请号：US366655

申请日：1989-06-15

申请人： Shuichi Satoh ,  Kazuwo Tsuji ,  Takeru Nakashima ,  Shuji Yazu ,  Yosio Nisida ,  Kiyofumi Muro ,  Yuzo Demizu ,  Masuo Nakagawa ,  Moritami Okada

发明人： Shuichi Satoh ,  Kazuwo Tsuji ,  Takeru Nakashima ,  Shuji Yazu ,  Yosio Nisida ,  Kiyofumi Muro ,  Yuzo Demizu ,  Masuo Nakagawa ,  Moritami Okada

IPC分类号： C30B33/00 ,  G11B7/0045 ,  G11B7/0055

CPC分类号： G11B7/0055 ,  C30B29/04 ,  C30B33/00 ,  G11B7/00453

摘要： A hole-burning material which comprises at least one hole which is formed on a zero-phonone line and semi-permanently lasts without suffering from any change in the temperature range from 2 to 120 K. and which can be erased by irradiation of excited light having an energy larger than the zero-phonone line, in which the burnt holes have long life and deep depth and any single holes can be erased.

公开(公告)号：US4950625A

公开(公告)日：1990-08-21

申请号：US364693

申请日：1989-06-08

申请人： Takeru Nakashima ,  Shuichi Satoh ,  Kazuwo Tsuji

发明人： Takeru Nakashima ,  Shuichi Satoh ,  Kazuwo Tsuji

IPC分类号： C30B33/04 ,  B01J3/06 ,  C30B29/04 ,  C30B33/00 ,  H01S3/16

CPC分类号： H01S3/1681 ,  B01J3/062 ,  C30B29/04 ,  C30B33/00 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/069

摘要： A method of manufacturing a diamond laser crystal having an excellent laser efficiency is performed by first, preparing a synthetic type Ib diamond containing at least 60 volume percent of a (111) plane growth sector (43) is prepared. This synthetic diamond is then thermally treated under high temperature/high pressure, so that type Ib nitrogen contained in the synthetic diamond is converted to type IaA nitrogen. Thereafter an electron beam is applied to the synthetic diamond in order to generate vacancies in the synthetic diamond. Finally annealing is performed on the synthetic diamond to form H3 centers by coupling the type IaA nitrogen atoms contained in the synthetic diamond, with the vacancies. According to this method, the H3 centers can be formed in the synthetic type Ib diamond at high concentration, while formation of NV centers which become an obstacle to laser action, can be suppressed.

公开(公告)号：US6129900A

公开(公告)日：2000-10-10

申请号：US307493

申请日：1994-09-16

申请人： Shuichi Satoh ,  Hitoshi Sumiya ,  Kazuwo Tsuji ,  Yasushi Gouda

发明人： Shuichi Satoh ,  Hitoshi Sumiya ,  Kazuwo Tsuji ,  Yasushi Gouda

IPC分类号： B01J3/06

CPC分类号： B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  B01J2203/067 ,  B01J2203/068

摘要： A colorless and transparent, substantially inclusion-free diamond crystal which can be applied to decorative uses and optical parts is synthesized by a process using a temperature gradient method in an ultra-high pressure apparatus. This process comprises using, as a solvent for the growth of the crystal, at least one metal selected from the group consisting of Fe, Co, Ni, Mn and Cr (at least two metals in the case of containing Fe) and as a nitrogen getter for the removal of nitrogen in the solvent, at least one metal selected from the group consisting of Al, Ti, Zr, Hf, V, Nb and Ta in a proportion of 0.5 to 7% by weight (at most 2% by weight when using only Al) to the solvent metal.

摘要翻译： PCT No.PCT / JP92 / 00149 Sec。 371日期：1992年10月14日 102（e）日期1992年10月14日PCT提交1992年2月14日PCT公布。 公开号WO92 / 14542 日期1992年9月3日可以应用于装饰用途和光学部件的无色透明的基本上不含夹杂的金刚石晶体通过在超高压装置中使用温度梯度法的方法合成。 该方法包括使用选自Fe，Co，Ni，Mn和Cr中的至少一种金属作为晶体生长的溶剂（在含有Fe的情况下至少有两种金属）和作为氮 吸附剂用于除去溶剂中的氮，至少一种选自Al，Ti，Zr，Hf，V，Nb和Ta的金属，其含量为0.5〜7重量％（最多2重量％ 当仅使用Al时）溶剂金属。

公开(公告)号：US4959201A

公开(公告)日：1990-09-25

申请号：US292754

申请日：1988-12-30

申请人： Shuichi Satoh ,  Kazuwo Tsuji

发明人： Shuichi Satoh ,  Kazuwo Tsuji

IPC分类号： C01B31/06 ,  B01J19/08 ,  C30B29/04 ,  C30B31/20 ,  C30B33/00

CPC分类号： B01J19/085 ,  C30B29/04 ,  C30B33/00

摘要： A green diamond has a nitrogen content in its crystals within the range of 5.times.10.sup.16 to 3.times.10.sup.19 atoms/cm.sup.3, an absorption coefficient of H2 centers at a wavelength of 800 nm within the range of 0.3 to 6 cm.sup.-1, an absorption coefficient of the Ib type nitrogen at a wavelength of 500 nm within the range of 0.05 to 1.5 cm.sup.-1, and absorption coefficients of H3 centers, H4 centers, N-V centers and GR1 centers in the visible region of not more than 0.2 cm.sup.-1. Such green diamonds are produced by preparing a clear-yellow Ib type diamond having a nitrogen content in crystals within the range of 5.times.10.sup.16 to 3.times.10.sup.19 atoms/cm.sup.3, irradiating this diamond with an electron beam having not less than 1.times.10.sup.18 electrons/cm.sup.2 at an accelerating voltage of 2 to 4 MeV, and subjecting the diamond to a heat treatment at a temperature of 1500.degree. C.-1800.degree. C. in a vacuum of not more than 10.sup.-3 torr.