公开(公告)号：US08578221B1

公开(公告)日：2013-11-05

申请号：US12977189

申请日：2010-12-23

申请人： Tetsuaki Ikoma ,  Shuji Kubo ,  Takuya Yoshimura ,  Ikura Yoshida

发明人： Tetsuaki Ikoma ,  Shuji Kubo ,  Takuya Yoshimura ,  Ikura Yoshida

IPC分类号： G06F11/00

CPC分类号： H04L1/203 ,  H04L2027/0028 ,  H04L2027/0036

摘要： A method is provided for determining a measure of error of a device under test (DUT). The method includes storing baseband data received from the DUT in a storage device, segmenting the baseband data into multiple data segments, determining processing parameters for one data segment of the plurality of data segments, and storing the determined processing parameters for the one data segment. The method further includes retrieving additional data segments of the multiple data segments from the storage device, and processing the additional data segments using the stored processing parameters for the one data segment. The measure of error of the DUT is determined based at least in part on data from the processed additional data segments.

摘要翻译： 提供了一种用于确定被测设备（DUT）的误差测量的方法。 该方法包括将从DUT接收的基带数据存储在存储装置中，将基带数据分割成多个数据段，确定多个数据段中的一个数据段的处理参数，以及存储所确定的一个数据段的处理参数。 该方法还包括从存储设备检索多个数据段的附加数据段，以及使用所存储的用于该一个数据段的处理参数来处理附加数据段。 至少部分地基于来自处理的附加数据段的数据来确定DUT的误差的度量。

公开(公告)号：US20100009447A1

公开(公告)日：2010-01-14

申请号：US12316973

申请日：2008-12-17

申请人： Haruki Okamura ,  Shuji Kubo ,  Wen Li

发明人： Haruki Okamura ,  Shuji Kubo ,  Wen Li

IPC分类号： C12N5/00 ,  C07K14/54 ,  C07F9/40

CPC分类号： A61K31/663 ,  A61K38/20 ,  A61K38/2013 ,  C12N5/0638 ,  C12N2501/2302 ,  C12N2501/2318 ,  C12N2501/999 ,  Y02A50/411 ,  A61K2300/00

摘要： A Vγ9Vδ2 T cell proliferation agent includes at least a bisphosphonate, interleukin 2, and interleukin 18. Since has properties that improve cell viability by inhibiting cell death, IL-18 is presumably capable of acting as a cofactor for the bisphosphonate so as to significantly increase the effect of Vγ9Vδ2 T cell proliferation by the bisphosphonate and the IL-2. This allows providing a Vγ9Vδ2 T cell proliferation agent capable of growing Vγ9Vδ2 T cells with a proliferated efficiency significantly high compared to conventional methods so that the proliferated Vγ9Vδ2 T cells have a high antitumor activity and high cytokine productivity.

摘要翻译： Vgamma9Vdelta2T细胞增殖剂包括至少二膦酸盐，白细胞介素2和白细胞介素18.由于具有通过抑制细胞死亡来改善细胞存活力的性质，因此推测IL-18能够作为双膦酸盐的辅因子，以显着增加 Vgamma9Vdelta2 T细胞增殖通过双膦酸盐和IL-2的作用。 这允许提供与常规方法相比，能够以增殖效率显着增加Vgamma9Vdelta2T细胞的Vgamma9Vdelta2T细胞增殖剂，使得增殖的Vgamma9Vdelta2T细胞具有高抗肿瘤活性和高细胞因子生产力。

公开(公告)号：US07749760B2

公开(公告)日：2010-07-06

申请号：US12316973

申请日：2008-12-17

申请人： Haruki Okamura ,  Shuji Kubo ,  Wen Li

发明人： Haruki Okamura ,  Shuji Kubo ,  Wen Li

IPC分类号： C12N5/078 ,  C12N5/0783 ,  C07K14/54 ,  C07F9/40

CPC分类号： A61K31/663 ,  A61K38/20 ,  A61K38/2013 ,  C12N5/0638 ,  C12N2501/2302 ,  C12N2501/2318 ,  C12N2501/999 ,  Y02A50/411 ,  A61K2300/00

摘要： A Vγ9Vδ2 T cell proliferation agent includes at least a bisphosphonate, interleukin 2, and interleukin 18. Since IL-18 has properties that improve cell viability by inhibiting cell death, IL-18 is presumably capable of acting as a cofactor for the bisphosphonate so as to significantly increase the effect of Vγ9Vδ2 T cell proliferation by the bisphosphonate and the IL-2. This allows providing a Vγ9Vδ2 T cell proliferation agent capable of growing Vγ9Vδ2 T cells with a proliferated efficiency significantly high compared to conventional methods so that the proliferated Vγ9Vδ2 T cells have a high antitumor activity and high cytokine productivity.

摘要翻译： Vγ9Vδ2T细胞增殖剂包括至少二膦酸盐，白细胞介素2和白细胞介素18.由于IL-18具有通过抑制细胞死亡来改善细胞活力的性质，因此推测IL-18能够作为双膦酸盐的辅因子，以便 显着增加了双膦酸盐和IL-2对Vγ9Vδ2T细胞增殖的影响。 这允许提供与常规方法相比，能够以增殖效率显着增加Vγ9Vδ2T细胞的Vγ9Vδ2T细胞增殖剂，使得增殖的Vγ9Vδ2T细胞具有高抗肿瘤活性和高细胞因子生产力。

公开(公告)号：US3982315A

公开(公告)日：1976-09-28

申请号：US539811

申请日：1975-01-09

申请人： Shuji Kubo

发明人： Shuji Kubo

IPC分类号： H01L31/10 ,  H01L21/78 ,  H01L31/00 ,  B01J17/00

CPC分类号： H01L21/78 ,  H01L31/00 ,  Y10S148/003 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/097 ,  Y10S148/12 ,  Y10S148/153

摘要： An n-type epitaxial layer is grown on a p-type silicon substrate. The epitaxial layer is photo-etched to provide a plurality of isolated regions of n-type conductivity. A silicon dioxide layer is provided on a surface covering the isolated regions and etched portions. The oxide layer is etched to provide a window which allows external light to fall on the exposed isolated region. Heat treatment steps have been reduced to a minimum to prevent lattice defects from occurring, resulting in a photodiode having a higher sensitivity to the visible spectrum range with less dark current.

摘要翻译： 在p型硅衬底上生长n型外延层。 对外延层进行光蚀刻以提供n型导电性的多个隔离区域。 在覆盖隔离区域和蚀刻部分的表面上设置二氧化硅层。 蚀刻氧化物层以提供允许外部光落在暴露的隔离区域上的窗口。 已经将热处理步骤降低到最小以防止发生晶格缺陷，导致光电二极管对具有较少暗电流的可见光谱范围具有较高的灵敏度。