公开(公告)号：US6040198A

公开(公告)日：2000-03-21

申请号：US18852

申请日：1998-02-04

申请人： Satoshi Komiya ,  Naoki Awaji ,  Shunji Kashiwagi

发明人： Satoshi Komiya ,  Naoki Awaji ,  Shunji Kashiwagi

IPC分类号： G01N23/20 ,  G01R31/26

CPC分类号： G01N23/20

摘要： X-rays are irradiated to a sample to be measured including at least one layer of film formed on a substrate; an interference oscillation curve of the X-rays incident on the sample to be measured is measured; and a concentration of an element adhered on a surface of the sample to be measured and/or segregated in an interface of the film is measured. The interference oscillation curve is fitted to an analysis formula expressing an X-ray reflectance to thereby determining a density of a region of the sample to be measured, where the element is adhered or is segregated, and a concentration of the element is computed based on the density.

摘要翻译： 将X射线照射到待测量的样品，其包括在基底上形成的至少一层膜; 测量入射到待测样品上的X射线的干涉振荡曲线; 并且测量粘附在要测量的样品的表面上和/或分离在膜的界面中的元素的浓度。 将干扰振荡曲线拟合到表示X射线反射率的分析公式，从而确定要测量的样品的区域的密度，其中元素被粘附或分离，并且基于 密度。

公开(公告)号：US5003370A

公开(公告)日：1991-03-26

申请号：US546659

申请日：1990-07-03

申请人： Shunji Kashiwagi

发明人： Shunji Kashiwagi

IPC分类号： H01L21/822 ,  H01L21/331 ,  H01L27/04 ,  H01L29/06 ,  H01L29/08 ,  H01L29/72 ,  H01L29/73

CPC分类号： H01L29/0692 ,  H01L29/0813 ,  H01L29/72

摘要： A high frequency and high power semiconductor device comprising unit cells of the same shape, connected in parallel and fabricated on a chip. The thermal resistance of the chip is reduced by arranging the unit cells in a zigzag pattern. The zigzag arrangement of the unit cells is such that each unit cell in a line is offset by approximately one-half pitch from the unit cells in neighboring lines. As a result of the zigzag arrangement of the unit cells, the temperature of each unit cell is less influenced by heat from the unit cells in neighboring lines than are unit cells in an orthogonal matrix. In addition, the thermal distribution of the unit cells is improved to prevent hot spots. Using the zigzag arrangement, a single transistor can output over 100 watts C.W. at more than 900 MHz.

摘要翻译： 一种高频和高功率半导体器件，包括并联连接并制造在芯片上的相同形状的单元电池。 通过将单元电池布置成Z字形图案来减小芯片的热阻。 单位单元的之字形布置使得一行中的每个单位单元从相邻行中的单位单元偏移大约一半的间距。 作为单元电池的锯齿形排列的结果，每个单元电池的温度受到来自相邻行中的单元电池的热量的影响小于正交矩阵中的单元电池的温度。 此外，提高了单元电池的热分布以防止热点。 使用锯齿形布置，单个晶体管可以输出超过900瓦的100瓦特C.W.

公开(公告)号：US5740226A

公开(公告)日：1998-04-14

申请号：US757622

申请日：1996-11-27

申请人： Satoshi Komiya ,  Naoki Awaji ,  Shunji Kashiwagi

发明人： Satoshi Komiya ,  Naoki Awaji ,  Shunji Kashiwagi

IPC分类号： G01N23/20 ,  G01N23/203 ,  G01N23/201

CPC分类号： G01N23/203 ,  G01N23/20

摘要： A film thickness measuring method comprises the steps of measuring reflectances of X-rays on a film, extracting interference oscillations from the measured X-ray reflectances, and Fourier transforming the interference oscillations to compute a film thickness of the film, an average reflectance being given by fitting the measured X-ray reflectances to an analysis formula including a term of a product of a power function of an incident angle, which expresses attenuation of reflectances on a smooth surface of the film and an exponent function which expresses influence of roughness of the surface of the film, and a constant term expressing a background added to the product; the interference oscillations being given by using the measured X-ray reflectances and the average reflectance. The film thickness measuring method can extract interference oscillations of a reflectance curve by a method including arbitrariness and by a simple procedure.

摘要翻译： 膜厚测量方法包括以下步骤：测量薄膜上的X射线的反射率，从测量的X射线反射率中提取干涉振荡，并傅里叶变换干涉振荡以计算膜的膜厚度，给出平均反射率 通过将所测量的X射线反射率拟合到分析公式中，该分析公式包括表示光滑表面上的反射率的衰减的入射角的幂函数的乘积项和表示膜的粗糙度的影响的指数函数 膜的表面，以及表示添加到产品中的背景的常数项; 通过使用测量的X射线反射率和平均反射率给出干扰振荡。 膜厚测量方法可以通过包括任意性的方法和简单的过程来提取反射曲线的干涉振荡。

公开(公告)号：US4571611A

公开(公告)日：1986-02-18

申请号：US480588

申请日：1983-03-30

申请人： Shunji Kashiwagi

发明人： Shunji Kashiwagi

IPC分类号： H01L23/36 ,  H01L29/06

CPC分类号： H01L23/36 ,  H01L29/0657 ,  H01L2924/0002 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/3511

摘要： A semiconductor chip, including a semiconductor substrate and a radiator plate. An active region is formed on one main surface of the semiconductor substrate. The radiator plate is bonded to the other main surface side of the semiconductor substrate. A recess is formed on the other main surface side so as to dispose the radiator plate therein.

摘要翻译： 一种半导体芯片，包括半导体基板和散热板。 在半导体衬底的一个主表面上形成有源区。 散热板连接到半导体基板的另一个主表面侧。 在另一主表面侧形成凹部，以将散热板设置在其中。