公开(公告)号：US4531156A

公开(公告)日：1985-07-23

申请号：US556993

申请日：1983-12-01

申请人： Jun-ichi Nishizawa ,  Sohbe Suzuki ,  Takashige Tamamushi ,  Yasuo Arisawa

发明人： Jun-ichi Nishizawa ,  Sohbe Suzuki ,  Takashige Tamamushi ,  Yasuo Arisawa

IPC分类号： H01L27/14 ,  H01L27/146 ,  H04N5/30 ,  H04N5/335 ,  H04N5/353 ,  H04N3/15

CPC分类号： H01L27/14679 ,  H04N3/1556 ,  H04N5/30

摘要： A solid state image pickup device having an electronic shutter function is disclosed. The device comprises a plurality of picture cells each having a static induction transistor and arranged in a matrix, a plurality of vertical and horizontal scanning lines for scanning the cells, vertical and horizontal registers for generating scanning pulses which drive the vertical and horizontal scanning lines, a readout signal line for reading out light information stored in the cells, a reset signal line for resetting the cells, and a shutter speed control circuit for optionally setting in one frame period the timing of reset scanning pulses generated from a vertical register.

摘要翻译： 公开了一种具有电子快门功能的固态图像拾取装置。 该装置包括多个图形单元，每个图形单元具有静态感应晶体管并且以矩阵形式布置，用于扫描单元的多条垂直和水平扫描线，用于产生驱动垂直和水平扫描线的扫描脉冲的垂直和水平寄存器， 用于读出存储在单元中的光信息的读出信号线，用于复位单元的复位信号线，以及快门速度控制电路，用于在一个帧周期中可选地设置从垂直寄存器产生的复位扫描脉冲的定时。

公开(公告)号：US5426314A

公开(公告)日：1995-06-20

申请号：US232422

申请日：1994-04-21

申请人： Jun-ichi Nishizawa ,  Sohbe Suzuki

发明人： Jun-ichi Nishizawa ,  Sohbe Suzuki

IPC分类号： H01L29/739 ,  H01L29/74 ,  H01L29/747

CPC分类号： H01L29/7391 ,  H01L29/7392

摘要： A static induction thyristor has a first semiconductor area having a high impurity concentration of a first conductivity type. A second semiconductor area having low impurity concentration is formed adjacent to the first semiconductor area. A third semiconductor area having a high impurity concentration of a second conductivity type which is the conductivity type opposite to the first conductivity type is formed on a part of a surface of the second semiconductor area so located as to form a fourth semiconductor area located within the third semiconductor area. A fifth semiconductor area having a high impurity concentration of the first conductivity type is formed on the part of the surface of the second semiconductor area in spaced relation to the forth semiconductor area. An insulating film formed to cover at least a portion of a surface of the fifth semiconductor area and a least a portion of the surface of the second semiconductor area, which is put between the forth semiconductor area and the fifth semiconductor area. An insulated-gate control electrode is formed on the insulating film. The first and third semiconductor areas serve as a first and second main electrode areas, respectively.

摘要翻译： 静态感应晶闸管具有第一导电类型的杂质浓度高的第一半导体区域。 形成与第一半导体区域相邻的具有低杂质浓度的第二半导体区域。 在第二半导体区域的表面的一部分上形成具有与第一导电类型相反的导电类型的第二导电类型的高杂质浓度的第三半导体区域，以形成位于第二半导体区域内的第四半导体区域 第三半导体领域。 在与第四半导体区域间隔开的第二半导体区域的表面的一部分上形成具有第一导电类型的高杂质浓度的第五半导体区域。 绝缘膜，形成为覆盖放置在第四半导体区域和第五半导体区域之间的第五半导体区域的表面的至少一部分和第二半导体区域的表面的至少一部分。 在绝缘膜上形成绝缘栅极控制电极。 第一和第三半导体区域分别用作第一和第二主电极区域。

公开(公告)号：US5115287A

公开(公告)日：1992-05-19

申请号：US752934

申请日：1991-08-30

申请人： Junichi Nishizawa ,  Nobuo Takeda ,  Sohbe Suzuki

发明人： Junichi Nishizawa ,  Nobuo Takeda ,  Sohbe Suzuki

IPC分类号： H01L21/32 ,  H01L21/335 ,  H01L21/60 ,  H01L27/085 ,  H01L29/772

CPC分类号： H01L29/66416 ,  H01L21/32 ,  H01L21/76897 ,  H01L27/085 ,  H01L29/7722 ,  H01L29/7725

摘要： A step-cut insulated gate static induction transistor can accurately make a channel length and a gate length and is excellent as a high speed transistor but is greatly affected by a deviation in mask alignment in the manufacturing process. This invention utilizes the fact that a gate portion formed in a previous processes is used as a mask in a post portion to thereby self-adjustably form the post portion, thus eliminating the influence of the deviation in mask alignment. In addition, a construction has been invented in which a current flowing through a portion apart from a gate between a drain and a source can be restricted. The aforesaid manufacturing method is also used for this improved construction.

公开(公告)号：US4587562A

公开(公告)日：1986-05-06

申请号：US555986

申请日：1983-11-29

申请人： Masaharu Imai ,  Jun-ichi Nishizawa ,  Sohbe Suzuki ,  Takashige Tamamushi

发明人： Masaharu Imai ,  Jun-ichi Nishizawa ,  Sohbe Suzuki ,  Takashige Tamamushi

IPC分类号： H01L27/146 ,  H04N5/30 ,  H04N5/335 ,  H04N5/353 ,  H04N5/357 ,  H04N3/14

CPC分类号： H04N5/30 ,  H01L27/14679

摘要： A solid state image pick-up device comprising a large number of picture cells arranged in a matrix. The picture cell comprises a first photoelectric conversion and readout SIT which comprises a gate region operating as a photoelectric conversion area and a second reset SIT which comprises a region (drain or source) electrically connected to the gate region of the first SIT, whereby the photoelectric charges stored in the gate regions of the first SITs of the picture cells in a matrix can be individually reset by means of the related second SITs.

摘要翻译： 一种固态图像拾取装置，包括以矩阵形式布置的大量图像单元。 图像单元包括第一光电转换和读出SIT，其包括作为光电转换区域操作的栅极区域和包括电连接到第一SIT的栅极区域的区域（漏极或源极）的第二复位SIT，由此光电 可以通过相关的第二SIT来单独地重置存储在矩阵中的图像单元的第一SIT的栅极区域中的电荷。

公开(公告)号：US5323028A

公开(公告)日：1994-06-21

申请号：US947939

申请日：1992-09-21

申请人： Jun-ichi Nishizawa ,  Sohbe Suzuki

发明人： Jun-ichi Nishizawa ,  Sohbe Suzuki

IPC分类号： H01L29/74 ,  H01L29/739 ,  H01L29/749 ,  H01L29/72 ,  H01L29/76

CPC分类号： H01L29/7392

摘要： In a MOS controlled power device, or MOS composite a static induction thyristor, an static induction thyristor (SI thyristor) unit, a MOS transistor connected in cascode relation to the SI thyristor unit and a voltage regulation element are merged onto the single monolithic chip. The SI thyristor unit has a cathode region of first conductivity type having high impurity concentration, an anode and a gate regions of second conductivity type having high impurity concentration, and a channel region of first conductivity type having low impurity concentration. The MOS transistor has a drain region which is the same region as the cathode region, a well or a base of second conductivity type formed adjacent to the channel region of the SI thyristor unit, and a source region of first conductivity type having high impurity concentration. The source region is formed within the well or above the base. The voltage regulation element comprises a first semiconductor region of second conductivity type, and a second semiconductor region of first conductivity type, both having high impurity concentration.

摘要翻译： 在MOS控制功率器件或MOS复合静态感应晶闸管中，静态感应晶闸管（SI晶闸管）单元，与SI晶闸管单元并联连接的MOS晶体管和电压调节元件合并到单个单片芯片上。 SI晶闸管单元具有具有高杂质浓度的第一导电类型的阴极区域，具有高杂质浓度的阳极和第二导电类型的栅极区域以及杂质浓度低的第一导电类型的沟道区域。 MOS晶体管具有与阴极区相同的漏极区域，与SI晶闸管单元的沟道区相邻形成的第二导电类型的阱或基极，以及具有高杂质浓度的第一导电型的源极区 。 源区形成在井内或基底之上。 电压调节元件包括第二导电类型的第一半导体区域和具有高杂质浓度的第一导电类型的第二半导体区域。

公开(公告)号：US4686555A

公开(公告)日：1987-08-11

申请号：US556347

申请日：1983-11-30

申请人： Atsushi Yusa ,  Jun-ichi Nishizawa ,  Sohbe Suzuki ,  Takashige Tamamushi

发明人： Atsushi Yusa ,  Jun-ichi Nishizawa ,  Sohbe Suzuki ,  Takashige Tamamushi

IPC分类号： H01L27/146 ,  H01L29/772 ,  H01L31/112 ,  H01L31/113 ,  H04N5/30 ,  H04N5/335 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L29/7722 ,  H01L27/14679 ,  H01L31/1126 ,  H01L31/1136 ,  H04N5/30

摘要： A solid state image sensor comprising static induction transistors each forming a picture element.Each static induction transistor in the solid state image sensor has a lateral structure in which the source and drain regions are formed by surface regions provided on the same side in an epitaxial layer forming the channel region and a signal charge storage gate region are formed by a buried gate region provided under the channel region and a surface gate region provided on the channel region, so that the source-drain current flows in parallel to the surface of epitaxial layer and is effectively controlled between the buried and surface gate regions.

摘要翻译： 一种固态图像传感器，包括各自形成像素的静态感应晶体管。 固态图像传感器中的每个静态感应晶体管具有横向结构，其中源极和漏极区域由形成沟道区的外延层中设置在同一侧的表面区域形成，并且信号电荷存储栅极区域由 掩埋栅极区域和设置在沟道区域上的表面栅极区域，使得源极 - 漏极电流平行于外延层的表面流动并且被有效地控制在掩埋栅极区域和表面栅极区域之间。

公开(公告)号：US4626916A

公开(公告)日：1986-12-02

申请号：US556050

申请日：1983-11-29

申请人： Toyokazu Mizoguchi ,  Jun-ichi Nishizawa ,  Sohbe Suzuki ,  Takashige Tamamushi

发明人： Toyokazu Mizoguchi ,  Jun-ichi Nishizawa ,  Sohbe Suzuki ,  Takashige Tamamushi

IPC分类号： H01L27/14 ,  H01L27/146 ,  H04N5/30 ,  H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/357 ,  H04N5/374 ,  H04N3/14

CPC分类号： H04N5/30 ,  H01L27/14679 ,  H04N3/1512

摘要： A solid state image pickup device having a shutter function is disclosed. The device comprises a plurality of picture cells each having a static induction transistor arranged in a matrix. The device further comprises a plurality of gate signal lines for simultaneously supplying gate signals to the picture cells placed on respective rows of the matrix, a vertical scanning register for generating and scanning the gate signals, a plurality of signal readout lines for reading out light signals stored in the picture cells placed on respective columns of the matrix, a shift register for simultaneously and temporarily storing read out signals and converting them into time series signals, a device connected between the signal readout means and the temporary storage means for controlling the connection therebetween.

摘要翻译： 公开了一种具有快门功能的固态图像拾取装置。 该装置包括多个图形单元，每个图形单元具有以矩阵形式布置的静态感应晶体管。 该装置还包括多个栅极信号线，用于同时向放置在矩阵的相应行上的图像单元提供栅极信号，用于产生和扫描栅极信号的垂直扫描寄存器，用于读出光信号的多条信号读出线 存储在放置在矩阵的相应列的图像单元中的移位寄存器，用于同时并临时存储读出的信号并将其转换为时间序列信号的移位寄存器，连接在信号读出装置和用于控制其间的连接的临时存储装置之间的装置 。

公开(公告)号：US4596605A

公开(公告)日：1986-06-24

申请号：US561443

申请日：1983-12-14

申请人： Junichi Nishizawa ,  Sohbe Suzuki ,  Mitsuru Ikeda ,  Hideki Mutoh

发明人： Junichi Nishizawa ,  Sohbe Suzuki ,  Mitsuru Ikeda ,  Hideki Mutoh

IPC分类号： H01L21/265 ,  H01L21/335 ,  H01L29/167 ,  H01L29/772 ,  H01L31/112 ,  H01L29/78

CPC分类号： H01L29/66416 ,  H01L21/26506 ,  H01L29/167 ,  H01L29/7722 ,  H01L31/1126

摘要： In a process for fabricating a static induction transistor having a gate region which is formed in a semiconductor layer including a channel region, ions of an impurity element are implanted into the semiconductor layer from the surface thereof to form the gate region. Ions of an element lighter than the impurity element are implanted into the gate region from the surface of the semiconductor layer in such a way that the concentration of the light element exhibits a plurality of profiles in the depth direction of the semiconductor layer. The semiconductor layer is annealed at a relatively low temperature after the two implanting steps to form the gate region in the semiconductor layer. A solid-state image sensor device is fabricated by using the static induction transistor as a picture cell.

摘要翻译： 在制造具有形成在包括沟道区的半导体层中的栅极区域的静电感应晶体管的工艺中，杂质元素的离子从其表面注入到半导体层中以形成栅极区。 将比杂质元素更轻的元件的离子从半导体层的表面以这样的方式注入到栅极区域中，使得光元件的浓度在半导体层的深度方向上呈现多个分布。 在两个注入步骤之后，半导体层在相对低的温度下退火以在半导体层中形成栅极区域。 通过使用静电感应晶体管作为图像单元来制造固态图像传感器装置。