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    Wafer chuck for use in edge bevel removal of copper from silicon wafers
    1.
    发明授权
    Wafer chuck for use in edge bevel removal of copper from silicon wafers 有权
    用于从硅晶片去除铜的边缘斜面的晶片卡盘

    公开(公告)号：US06967174B1

    公开(公告)日：2005-11-22

    申请号：US10357999

    申请日：2003-02-03

    Applicant: Steven T. Mayer ,  Steve Taatjes ,  Andy McCutcheon ,  Jim Schall ,  Jingbin Feng

    Inventor： Steven T. Mayer ,  Steve Taatjes ,  Andy McCutcheon ,  Jim Schall ,  Jingbin Feng

    IPC: H01L21/00 ,  H01L21/302

    CPC classification number: H01L21/6708 ,  H01L21/67051

    Abstract: A wafer chuck includes alignment members that allows a semiconductor wafer to be properly aligned on the chuck without using a separate alignment stage. The alignment members may be cams, for example, attached to arms of the wafer chuck. These members may assume an alignment position when a robot arm places the wafer on the chuck. In this position, they guide the wafer into a proper alignment position with respect to the chuck. During rotation at a particular rotational speed, the alignment members move away from the wafer to allow liquid etchant to flow over the entire edge region of the wafer. At still higher rotational speeds, the wafer is clamped into position to prevent it from flying off the chuck. A clamping cam or other device (such as the alignment member itself) may provide the clamping.

    Abstract translation: 晶片卡盘包括对准部件，其允许半导体晶片在不使用单独的对准阶段的情况下适当地对准卡盘。 对准构件可以是凸轮，例如，附接到晶片卡盘的臂。 当机器人臂将晶片放置在卡盘上时，这些构件可以采取对准位置。 在这个位置上，它们将晶片引导到相对于卡盘的适当对准位置。 在以特定转速旋转期间，对准构件远离晶片移动以允许液体蚀刻剂流过晶片的整个边缘区域。 在更高的旋转速度下，晶片被夹紧就位以防止其从卡盘上飞走。 夹紧凸轮或其他装置（例如对准构件本身）可以提供夹紧。

    Wafer chuck for use in edge bevel removal of copper from silicon wafers
    4.
    发明授权
    Wafer chuck for use in edge bevel removal of copper from silicon wafers 有权
    用于从硅晶片去除铜的边缘斜面的晶片卡盘

    公开(公告)号：US06537416B1

    公开(公告)日：2003-03-25

    申请号：US09558249

    申请日：2000-04-25

    Applicant: Steven T. Mayer ,  Steve Taatjes ,  Andy McCutcheon ,  Jim Schall ,  Jinbin Feng

    Inventor： Steven T. Mayer ,  Steve Taatjes ,  Andy McCutcheon ,  Jim Schall ,  Jinbin Feng

    IPC: C23F100

    CPC classification number: H01L21/6708 ,  H01L21/67051

    Abstract: A wafer chuck includes alignment members that allows a semiconductor wafer to be properly aligned on the chuck without using a separate alignment stage. The alignment members may be cams, for example, attached to arms of the wafer chuck. These members may assume an alignment position when a robot arm places the wafer on the chuck. In this position, they guide the wafer into a proper alignment position with respect to the chuck. During rotation at a particular rotational speed, the alignment members move away from the wafer to allow liquid etchant to flow over the entire edge region of the wafer. At still higher rotational speeds, the wafer is clamped into position to prevent it from flying off the chuck. A clamping cam or other device (such as the alignment member itself) may provide the clamping.

    Abstract translation: 晶片卡盘包括对准部件，其允许半导体晶片在不使用单独的对准阶段的情况下适当地对准卡盘。 对准构件可以是凸轮，例如，附接到晶片卡盘的臂。 当机器人臂将晶片放置在卡盘上时，这些构件可以采取对准位置。 在这个位置上，它们将晶片引导到相对于卡盘的适当对准位置。 在以特定转速旋转期间，对准构件远离晶片移动以允许液体蚀刻剂流过晶片的整个边缘区域。 在更高的旋转速度下，晶片被夹紧就位以防止其从卡盘上飞走。 夹紧凸轮或其他装置（例如对准构件本身）可以提供夹紧。

    Method and apparatus for treating surface including virtual anode
    5.
    发明授权
    Method and apparatus for treating surface including virtual anode 失效
    用于处理包括虚拟阳极的表面的方法和装置

    公开(公告)号：US06179983B2

    公开(公告)日：2001-01-30

    申请号：US08969267

    申请日：1997-11-13

    Applicant: Jonathan David Reid ,  Steve Taatjes

    Inventor： Jonathan David Reid ,  Steve Taatjes

    IPC: C25D500

    CPC classification number: C25D7/123 ,  C25D17/001 ,  C25D17/007 ,  C25D17/12 ,  Y10S204/07

    Abstract: An apparatus for depositing an electrical conductive layer on the surface of a wafer includes a virtual anode located between the actual anode and the wafer. The virtual anode modifies the electric current flux and plating solution flow between the actual anode and the wafer to thereby modify the thickness profile of the deposited electrically conductive layer on the wafer. The virtual anode can have openings through which the electrical current flux passes. By selectively varying the radius, length, or both, of the openings, any desired thickness profile of the deposited electrically conductive layer on the wafer can be readily obtained.

    Abstract translation: 用于在晶片表面上沉积导电层的装置包括位于实际阳极和晶片之间的虚拟阳极。 虚拟阳极改变实际阳极和晶片之间的电流通量和电镀液流动，从而改变晶片上沉积的导电层的厚度分布。 虚拟阳极可以具有电流通过的开口。 通过选择性地改变开口的半径，长度或两者，可以容易地获得晶片上沉积的导电层的任何期望的厚度分布。

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