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1.发明授权公开(公告)号：US06193859B1
公开(公告)日：2001-02-27
申请号：US09074624
申请日：1998-05-07
申请人： Robert J. Contolini , Jonathan Reid , Evan Patton , Jingbin Feng , Steve Taatjes , John Owen Dukovic
发明人： Robert J. Contolini , Jonathan Reid , Evan Patton , Jingbin Feng , Steve Taatjes , John Owen Dukovic
IPC分类号： C25D1700
CPC分类号： C25D7/12 , C25D17/001
摘要： An apparatus for depositing an electrically conductive layer on the surface of a wafer comprises a flange. The flange has a cylindrical wall and an annulus attached to a first end of the cylindrical wall. The annulus shields the edge region of the wafer surface during electroplating reducing the thickness of the deposited electrically conductive layer on the edge region. Further, the cylindrical wall of the flange can be provided with a plurality of apertures adjacent the wafer allowing gas bubbles entrapped on the wafer surface to readily escape.
摘要翻译： 用于在晶片表面上沉积导电层的设备包括凸缘。 凸缘具有圆柱形壁和连接到圆柱形壁的第一端的环形空间。 在电镀过程中，环形屏蔽了晶片表面的边缘区域，从而减小了边缘区域上沉积的导电层的厚度。 此外，凸缘的圆柱形壁可以设置有与晶片相邻的多个孔，允许夹在晶片表面上的气泡容易地逸出。
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2.发明授权Method of making electroplated interconnection structures on integrated circuit chips 有权在集成电路芯片上制作电镀互连结构的方法公开(公告)号：US06709562B1
公开(公告)日：2004-03-23
申请号：US09348632
申请日：1999-07-06
申请人： Panayotis Constantinou Andricacos , Hariklia Deligianni , John Owen Dukovic , Daniel Charles Edelstein , Wilma Jean Horkans , Chao-Kun Hu , Jeffrey Louis Hurd , Kenneth Parker Rodbell , Cyprian Emeka Uzoh , Kwong-Hon Wong
发明人： Panayotis Constantinou Andricacos , Hariklia Deligianni , John Owen Dukovic , Daniel Charles Edelstein , Wilma Jean Horkans , Chao-Kun Hu , Jeffrey Louis Hurd , Kenneth Parker Rodbell , Cyprian Emeka Uzoh , Kwong-Hon Wong
IPC分类号： C25D712
CPC分类号： H01L21/2885 , C25D3/38 , C25D7/123 , H01L21/76877
摘要： A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of Cu electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.
摘要翻译： 描述了用于制造用于集成电路芯片的亚微米互连结构的过程。 通过从包含添加剂的浴中电镀Cu获得无空隙和无缝导体，并且通常用于沉积水平，光亮，延展性和低应力Cu金属。 这种方法在不留下空隙或接缝的情况下超滤特征的能力是独一无二的，优于其他沉积方法。 以这种方式使用电镀Cu的结构的电迁移电阻优于AlCu结构或使用不是电镀方法沉积的Cu制造的结构的电迁移电阻。
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公开(公告)号：US06251251B1
公开(公告)日：2001-06-26
申请号：US09192431
申请日：1998-11-16
IPC分类号： C25D2118
CPC分类号： C25D7/12 , C25D17/001 , C25D17/12
摘要： An anode assembly including a perforated anode. A perforated anode holder holds the anode. The anode holder includes perforations at least in a bottom wall such that plating solution may flow through perforations in the anode holder and perforations in the anode. An anode isolator separates the anode and a cathode. The anode isolator includes at least one curvilinear surface.
摘要翻译： 包括穿孔阳极的阳极组件。 穿孔阳极支架固定阳极。 阳极保持器至少在底壁中具有穿孔，使得电镀溶液可以流过阳极保持器中的穿孔和阳极中的穿孔。 阳极隔离器分离阳极和阴极。 阳极隔离器包括至少一个曲线表面。
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4.发明授权
公开(公告)号：US6126798A
公开(公告)日：2000-10-03
申请号：US969196
申请日：1997-11-13
CPC分类号： C25D17/10 , C25D17/00 , C25D17/001 , C25D17/008
摘要： An anode includes an anode cup, a membrane and ion source material, the anode cup and membrane forming an enclosure in which the ion source material is located. The anode cup includes a base section having a central aperture and the membrane also has a central aperture. A jet is passed through the central apertures of the base section of the anode cup and through the membrane allowing plating solution to be directed at the center of a wafer being electroplated.
摘要翻译： 阳极包括阳极杯，膜和离子源材料，阳极杯和膜形成离子源材料所在的外壳。 阳极杯包括具有中心孔的基部，并且膜还具有中心孔。 射流穿过阳极杯的基部的中心孔并通过膜，允许电镀溶液指向正在电镀的晶片的中心。
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公开(公告)号：US06946716B2
公开(公告)日：2005-09-20
申请号：US10773434
申请日：2004-02-09
申请人： Panayotis Constantinou Andricacos , Harikilia Deligianni , John Owen Dukovic , Daniel C. Edelstein , Wilma Jean Horkans , Chao-Kun Hu , Jeffrey Louis Hurd , Kenneth P. Rodbell , Cyprian Emeka Uzoh , Kwong-Hon Wong
发明人： Panayotis Constantinou Andricacos , Harikilia Deligianni , John Owen Dukovic , Daniel C. Edelstein , Wilma Jean Horkans , Chao-Kun Hu , Jeffrey Louis Hurd , Kenneth P. Rodbell , Cyprian Emeka Uzoh , Kwong-Hon Wong
IPC分类号： H01L21/288 , H01L21/768 , H01L29/00
CPC分类号： C25D3/38 , C25D5/022 , H01L21/2885 , H01L21/76877 , H01L21/76885
摘要： A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of CU electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.
摘要翻译： 描述了用于制造用于集成电路芯片的亚微米互连结构的过程。 通过从包含添加剂的浴中电镀Cu获得无空隙和无缝导体，并且通常用于沉积水平，光亮，延展性和低应力Cu金属。 这种方法在不留下空隙或接缝的情况下超量填充特征的能力是独一无二的，优于其他沉积方法。 以这种方式电镀Cu的结构的电迁移阻力优于AlCu结构或使用不是电镀方法沉积的Cu制造的结构的电迁移电阻。
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公开(公告)号：US06569299B1
公开(公告)日：2003-05-27
申请号：US09574666
申请日：2000-05-18
IPC分类号： C25B1300
CPC分类号： C25D17/10 , C25D17/00 , C25D17/001 , C25D17/008
摘要： An anode includes an anode cup, a membrane and ion source material, the anode cup and membrane forming an enclosure in which the ion source material is located. The anode cup includes a base section having a central aperture and the membrane also has a central aperture. A jet is passed through the central apertures of the base section of the anode cup and through the membrane allowing plating solution to be directed at the center of a wafer being electroplated.
摘要翻译： 阳极包括阳极杯，膜和离子源材料，阳极杯和膜形成离子源材料所在的外壳。 阳极杯包括具有中心孔的基部，并且膜还具有中心孔。 射流穿过阳极杯的基部的中心孔并通过膜，允许电镀溶液指向正在电镀的晶片的中心。
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公开(公告)号：US6159354A
公开(公告)日：2000-12-12
申请号：US970120
申请日：1997-11-13
申请人： Robert J. Contolini , Jonathan Reid , Evan Patton , Jingbin Feng , Steve Taatjes , John Owen Dukovic
发明人： Robert J. Contolini , Jonathan Reid , Evan Patton , Jingbin Feng , Steve Taatjes , John Owen Dukovic
CPC分类号： C25D7/12 , C25D17/001
摘要： An apparatus for depositing an electrically conductive layer on the surface of a wafer comprises a flange. The flange has a cylindrical wall and an annulus attached to a first end of the cylindrical wall. The annulus shields the edge region of the wafer surface during electroplating reducing the thickness of the deposited electrically conductive layer on the edge region. Further, the cylindrical wall of the flange can be provided with a plurality of apertures adjacent the wafer allowing gas bubbles entrapped on the wafer surface to readily escape.
摘要翻译： 用于在晶片表面上沉积导电层的设备包括凸缘。 凸缘具有圆柱形壁和连接到圆柱形壁的第一端的环形空间。 在电镀过程中，环形屏蔽了晶片表面的边缘区域，从而减小了边缘区域上沉积的导电层的厚度。 此外，凸缘的圆柱形壁可以设置有与晶片相邻的多个孔，允许夹在晶片表面上的气泡容易地逸出。
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