公开(公告)号：US20140209476A1

公开(公告)日：2014-07-31

申请号：US13753333

申请日：2013-01-29

申请人： Jian Zhou ,  Jon Reid

发明人： Jian Zhou ,  Jon Reid

IPC分类号： C25D7/12

CPC分类号： C25D7/123 ,  C25D3/38 ,  C25D5/10 ,  C25D5/48 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76877

摘要： Certain embodiments herein relate to a method of electroplating copper into damascene features using a low copper concentration electrolyte having less than about 10 g/L copper ions and about 2-15 g/L acid. Using the low copper electrolyte produces a relatively high overpotential on the plating substrate surface, allowing for a slow plating process with few fill defects. The low copper electrolyte may have a relatively high cloud point.

摘要翻译： 本文的某些实施例涉及使用具有小于约10g / L铜离子和约2-15g / L酸的低铜浓度电解质将铜电镀到镶嵌特征中的方法。 使用低铜电解液在电镀基板表面产生相对较高的超电势，允许具有少量填充缺陷的缓慢电镀工艺。 低铜电解质可能具有较高的浊点。

公开(公告)号：US20080192413A1

公开(公告)日：2008-08-14

申请号：US11909583

申请日：2006-03-24

申请人： Jon Reid ,  Michael Soire

发明人： Jon Reid ,  Michael Soire

IPC分类号： H05K5/06

CPC分类号： H05K5/061

摘要： Weatherproofed assembly for housing electronic hardware, the assembly comprising a back plate arranged for fastening to a surface and a front housing arranged for, at least partially, containing the electronic hardware. The front housing including a sealing member, wherein the front housing is further arranged for fastening to the back plate so that during the fastening, the sealing member sealingly engages the back plate to weatherproof the electronic hardware within the assembly.

摘要翻译： 用于容纳电子硬件的防水组件，所述组件包括布置成紧固到表面的背板和布置成用于至少部分地包含所述电子硬件的前壳体。 所述前壳体包括密封构件，其中所述前壳体还被布置成紧固到所述背板，使得在所述紧固期间，所述密封构件密封地接合所述背板以防止所述组件内的电子硬件。

公开(公告)号：US07405157B1

公开(公告)日：2008-07-29

申请号：US11071135

申请日：2005-03-02

申请人： Jon Reid ,  Seyang Park

发明人： Jon Reid ,  Seyang Park

IPC分类号： H01L21/44

CPC分类号： C25D7/12 ,  C25D5/18 ,  C25D5/34 ,  H01L21/02068 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877

摘要： Methods are provided for electrochemically depositing copper on a work piece. One method includes the step of depositing overlying the work piece a barrier layer having a surface and subjecting the barrier layer surface to a surface treatment adapted to facilitate deposition of copper on the barrier layer. Copper then is electrochemically deposited overlying the barrier layer.

摘要翻译： 提供了用于在工件上电化学沉积铜的方法。 一种方法包括沉积覆盖工件的具有表面的阻挡层并使阻挡层表面经受适于促进铜在阻挡层上沉积的表面处理的步骤。 然后将铜电化学沉积在覆盖阻挡层上。

公开(公告)号：US06402923B1

公开(公告)日：2002-06-11

申请号：US09537467

申请日：2000-03-27

申请人： Steven T. Mayer ,  Richard Hill ,  Alain Harrus ,  Evan Patton ,  Robert Contolini ,  Steve Taatjes ,  Jon Reid

发明人： Steven T. Mayer ,  Richard Hill ,  Alain Harrus ,  Evan Patton ,  Robert Contolini ,  Steve Taatjes ,  Jon Reid

IPC分类号： C25D500

CPC分类号： C25D17/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  C25D17/12 ,  Y10S204/07

摘要： An electrochemical reactor is used to electrofill damascene architecture for integrated circuits. A shield is used to screen the applied field during electroplating operations to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film seed layer of copper on the wafer.

摘要翻译： 电化学反应器用于集成电路的大马士革结构。 在电镀操作期间使用屏蔽来屏蔽施加的场，以补偿沿着晶片半径的电位降。 屏蔽层在电解液中建立反向电位降，以克服晶片上铜的薄膜晶种层的电阻。

公开(公告)号：US07879218B1

公开(公告)日：2011-02-01

申请号：US10741048

申请日：2003-12-18

申请人： Eric Webb ,  Jon Reid ,  Yuichi Takada ,  Timothy Archer

发明人： Eric Webb ,  Jon Reid ,  Yuichi Takada ,  Timothy Archer

IPC分类号： C25D5/34

CPC分类号： C25D7/123 ,  C25D5/34 ,  H01L21/2885 ,  H01L21/76877

摘要： The present invention provides improved methods and devices for electroplating copper on a wafer. Some implementations of the present invention involve the pre-treatment of the wafer with a solution containing accelerator molecules. Preferably, the bath into which the wafer is subsequently placed for electroplating has a reduced concentration of accelerator molecules. The pre-treatment causes a reduction in roughness of the electroplated copper surface, particularly during the initial phases of copper growth.

摘要翻译： 本发明提供了用于在晶片上电镀铜的改进方法和装置。 本发明的一些实施方案涉及用含有促进剂分子的溶液预处理晶片。 优选地，晶片随后放置用于电镀的浴具有降低的促进剂分子浓度。 预处理导致电镀铜表面的粗糙度降低，特别是在铜生长的初始阶段。