公开(公告)号：US5908312A

公开(公告)日：1999-06-01

申请号：US864220

申请日：1997-05-28

申请人： Kin Ping Cheung ,  Steven James Hillenius ,  Chun-Ting Liu ,  Yi Ma ,  Pradip Kumar Roy

发明人： Kin Ping Cheung ,  Steven James Hillenius ,  Chun-Ting Liu ,  Yi Ma ,  Pradip Kumar Roy

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L21/336

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L21/2822 ,  H01L29/518 ,  H01L21/26506

摘要： A method of preventing diffusion penetration of the dopant used to dope polysilicon gate material in a MOSFET is disclosed. Atomic nitrogen is introduced into the substrate prior to gate oxide growth. The nitrogen later diffuses upward into the gate oxide and blocks subsequent ion implanted gate dopants from penetrating to the substrate. Low dosages of atomic nitrogen implantation, while not significantly affecting gate oxide growth rate, produce significant improvements in the damage immunity of thin gate oxides.

摘要翻译： 公开了一种防止用于掺杂MOSFET中的多晶硅栅极材料的掺杂剂的扩散渗透的方法。 在栅极氧化物生长之前将原子氮引入衬底中。 然后氮气向上扩散到栅极氧化物中，并阻止随后的离子注入的栅极掺杂剂渗透到衬底。 低剂量的原子氮注入虽然没有显着影响栅极氧化物的生长速率，但对薄栅氧化物的损伤免疫力产生了显着的改善。

公开(公告)号：US5851922A

公开(公告)日：1998-12-22

申请号：US865548

申请日：1997-05-29

申请人： Joze Bevk ,  Matthias Werner Fuertsch ,  George E. Georgiou ,  Steven James Hillenius

发明人： Joze Bevk ,  Matthias Werner Fuertsch ,  George E. Georgiou ,  Steven James Hillenius

IPC分类号： H01L23/52 ,  H01L21/225 ,  H01L21/3205 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/76

CPC分类号： H01L21/823835

摘要： The invention is directed to a process for forming p.sup.+ and n.sup.+ gates on a single substrate. A polycrystalline silicon or amorphous silicon layer is formed on a substrate with n-type and p-type regions formed therein and with a layer of silicon dioxide formed thereover and the structure is subjected to a low temperature anneal. A layer of metal silicide is then formed over the structure and n-type and p-type dopants are implanted into the resulting structure. A nitrogen implant is performed after the n-type dopant is implanted into the structure. The nitrogen implant reduces the amount to which the p-type dopant diffuses through the silicide layer and into the n.sup.+ gates. A dielectric material is then formed over the structure and patterned, after which the structure is subjected to additional processing steps to form gate stacks over the n-regions and the p-regions of the substrate.

摘要翻译： 本发明涉及在单个衬底上形成p +和n +栅极的方法。 在其上形成有n型和p型区的衬底上形成多晶硅或非晶硅层，并在其上形成二氧化硅层，并且对该结构进行低温退火。 然后在结构上形成一层金属硅化物，并将n型和p型掺杂剂注入所得结构中。 在将n型掺杂剂注入结构中之后进行氮注入。 氮注入减少了p型掺杂剂通过硅化物层并进入n +栅极的量。 然后在结构上形成电介质材料并进行图案化，然后对该结构进行额外的处理步骤，以在衬底的n区和p区上形成栅叠层。