公开(公告)号：US07187143B2

公开(公告)日：2007-03-06

申请号：US10781756

申请日：2004-02-20

申请人： Keiji Okada ,  Yoshitomo Hidaka ,  Michiro Sugitani ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

发明人： Keiji Okada ,  Yoshitomo Hidaka ,  Michiro Sugitani ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

IPC分类号： H02P1/00

CPC分类号： H01L21/67709 ,  Y10T74/15

摘要： A mover device and an ion implanter apparatus having a processing base that reciprocates at a high speed without undesirable noise and vibration are provided. The mover device includes: a fixed base; a movable base that is linearly movable with respect to the fixed base; a processing base that is linearly movable with respect to the movable base; a main linear motor that generates a moving force to move the processing base with respect to the movable base, thereby moving the processing base with respect to the fixed base; and a velocity control unit that controls the moving velocity of the processing base with respect to the fixed base. In this mover device, the movable base is moved by virtue of a reaction force caused by the moving force to move the processing base.

摘要翻译： 提供了具有处理基座的移动装置和离子注入机装置，该处理基座高速往复运动而没有不期望的噪声和振动。 动子装置包括：固定基座; 可移动基座，其相对于固定基座线性移动; 处理基座，其相对于所述可动基座线性移动; 主线性电动机，其产生相对于可移动基座移动处理基座的移动力，从而相对于固定基座移动处理基座; 以及速度控制单元，其控制所述处理基座相对于所述固定基座的移动速度。 在这种移动装置中，可移动基座由于由移动力引起的反作用力而移动，以移动处理基座。

公开(公告)号：US5608223A

公开(公告)日：1997-03-04

申请号：US458354

申请日：1995-06-02

申请人： Suguru Hirokawa ,  Frank Sinclair

发明人： Suguru Hirokawa ,  Frank Sinclair

IPC分类号： C23C14/48 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265 ,  H01L21/687 ,  G21K5/10

CPC分类号： H01L21/68728 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/68764 ,  H01L21/68771 ,  H01J2237/202 ,  H01J2237/31703

摘要： An ion implantation device is equipped with a high-speed driving device which causes rotation of a disk that supports semiconductor wafers around its outer periphery. A center position of the disk is the axis of the high-speed rotation. A low-speed driving device causes relative movement of the disk in a radial direction. The ion implantation device calculates the movement speed of the low-speed driving device with reference to different spacings between wafers about the outer periphery and the distance from the center of the disk to the ion implantation position and controls the low speed scan speed so that ions are uniformly implanted into the wafers.

摘要翻译： 离子注入装置配备有高速驱动装置，其使围绕其外周支撑半导体晶片的盘的旋转。 盘的中心位置是高速旋转的轴。 低速驱动装置导致盘在径向上的相对运动。 离子注入装置参考围绕外周的晶片间的不同间隔和从盘的中心到离子注入位置的距离来计算低速驱动装置的移动速度，并且控制低速扫描速度，使得离子 均匀地植入晶片。

公开(公告)号：US07597531B2

公开(公告)日：2009-10-06

申请号：US11044632

申请日：2005-01-28

申请人： Keiji Okada ,  Michiro Sugitani ,  Yoshitomo Hidaka ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

发明人： Keiji Okada ,  Michiro Sugitani ,  Yoshitomo Hidaka ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

IPC分类号： B65H1/00 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H02K41/00

CPC分类号： H01L21/67706 ,  H01L21/67709 ,  Y10S414/135

摘要： Embodiments of the invention are directed to a method of controlling a mover device The method includes generating a moving force from a moving force generating unit to move a processing base with respect to a movable base, thereby moving the processing base with respect to a fixed base as a result of the movement of the processing base with respect to the movable base; moving the movable base on the fixed base in the opposite direction to the moving direction of the processing base by virtue of a reaction force caused by the moving force generated from the moving force generating unit to move the processing base, so that the movable base moves in the opposite direction to the moving direction of the processing base on the fixed base. The method further includes controlling the moving velocity of the processing base with respect to the fixed base.

摘要翻译： 本发明的实施例涉及一种控制移动器装置的方法。该方法包括从移动力产生单元产生移动力以相对于可移动基座移动处理基座，从而相对于固定基座移动处理基座 作为处理基座相对于可移动基座移动的结果; 通过由从移动力产生单元产生的移动力产生的反作用力使处于移动方向的方向与处理基座的移动方向相反的方向移动到固定基座上，以移动处理基座，使得可移动基座移动 在与固定基座上的处理基座的移动方向相反的方向上。 该方法还包括控制处理基座相对于固定基座的移动速度。

公开(公告)号：US5525807A

公开(公告)日：1996-06-11

申请号：US465420

申请日：1995-06-05

申请人： Suguru Hirokawa ,  Frank Sinclair ,  Neil E. DeMario

发明人： Suguru Hirokawa ,  Frank Sinclair ,  Neil E. DeMario

IPC分类号： H01J37/304 ,  H01J37/317 ,  H01L21/687 ,  H01J37/00

CPC分类号： H01L21/68728 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/68764 ,  H01L21/68771 ,  H01J2237/202 ,  H01J2237/31703

摘要： An ion implantation device equipped with a high-speed driving device which causes rotation of the a disk that supports semiconductor wafers around it outer periphery. A center position of the disk is the axis of the rotation of the high speed rotation. A low-speed driving device causes relative movement of the disk in a radial direction. The ion implantation device further has a control circuit which calculates the movement speed of the aforementioned low-speed driving device with reference to different spacings between wafers about the outer periphery and the distance from the center of the disk to the ion implantation position, and controls said low speed scan speed so that ions are uniformly implanted into the aforementioned wafers.

摘要翻译： 一种配备有高速驱动装置的离子注入装置，其使围绕其外周的半导体晶片支撑的盘的旋转。 盘的中心位置是高速旋转的旋转轴。 低速驱动装置导致盘在径向上的相对运动。 离子注入装置还具有控制电路，该控制电路基于围绕外周的晶片间的不同间隔和从盘的中心到离子注入位置的距离来计算上述低速驱动装置的移动速度，并且控制 所述低速扫描速度使得离子均匀地注入到上述晶片中。

公开(公告)号：US20050188924A1

公开(公告)日：2005-09-01

申请号：US11044632

申请日：2005-01-28

申请人： Keiji Okada ,  Michiro Sugitani ,  Yoshitomo Hidaka ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

发明人： Keiji Okada ,  Michiro Sugitani ,  Yoshitomo Hidaka ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

IPC分类号： G03F7/20 ,  G05D3/12 ,  H01L21/02 ,  H01L21/027 ,  H01L21/677 ,  H01L21/68 ,  C23C16/00

CPC分类号： H01L21/67706 ,  H01L21/67709 ,  Y10S414/135

摘要： A method of controlling a mover device that includes: a fixed base; a movable base that is moveable in a linear direction with respect to the fixed base; a processing base that is movable in a linear direction with respect to the movable base, the linear direction being in parallel with the linear moving direction of the movable base; and a moving force generating unit that is provided between the processing base and the movable base, and forms a main moving unit in cooperation with the processing base and the movable base, includes the steps of: generating a moving force from the moving force generating unit to move the processing base with respect to the movable base, thereby moving the processing base with respect to the fixed base as a result of the movement of the processing base with respect to the movable base; moving the movable base on the fixed base in the opposite direction to the moving direction of the processing base by virtue of a reaction force caused by the moving force generated from the moving force generating unit to move the processing base, so that the movable base moves in the opposite direction to the moving direction of the processing base on the fixed base; and controlling the moving velocity of the processing base with respect to the fixed base.

摘要翻译： 一种控制动子装置的方法，包括：固定基座; 可移动基座，其相对于所述固定基座在直线方向上移动; 处理基座，其相对于可动基座在直线方向上移动，所述线性方向与所述可动基座的线性移动方向平行; 以及设置在所述处理基座和所述可动基座之间并与所述处理基座和所述可动基座协作形成主移动单元的移动力产生单元，包括以下步骤：从所述移动力产生单元产生移动力 相对于可移动基座移动处理基座，从而由于处理基座相对于可移动基座的移动而相对于固定基座移动处理基座; 通过由从移动力产生单元产生的移动力产生的反作用力使处于移动方向的方向与处理基座的移动方向相反的方向移动到固定基座上，以移动处理基座，使得可移动基座移动 在与固定基座上的处理基座的移动方向相反的方向上; 并且控制处理基座相对于固定基座的移动速度。