公开(公告)号：US07187143B2

公开(公告)日：2007-03-06

申请号：US10781756

申请日：2004-02-20

申请人： Keiji Okada ,  Yoshitomo Hidaka ,  Michiro Sugitani ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

发明人： Keiji Okada ,  Yoshitomo Hidaka ,  Michiro Sugitani ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

IPC分类号： H02P1/00

CPC分类号： H01L21/67709 ,  Y10T74/15

摘要： A mover device and an ion implanter apparatus having a processing base that reciprocates at a high speed without undesirable noise and vibration are provided. The mover device includes: a fixed base; a movable base that is linearly movable with respect to the fixed base; a processing base that is linearly movable with respect to the movable base; a main linear motor that generates a moving force to move the processing base with respect to the movable base, thereby moving the processing base with respect to the fixed base; and a velocity control unit that controls the moving velocity of the processing base with respect to the fixed base. In this mover device, the movable base is moved by virtue of a reaction force caused by the moving force to move the processing base.

摘要翻译： 提供了具有处理基座的移动装置和离子注入机装置，该处理基座高速往复运动而没有不期望的噪声和振动。 动子装置包括：固定基座; 可移动基座，其相对于固定基座线性移动; 处理基座，其相对于所述可动基座线性移动; 主线性电动机，其产生相对于可移动基座移动处理基座的移动力，从而相对于固定基座移动处理基座; 以及速度控制单元，其控制所述处理基座相对于所述固定基座的移动速度。 在这种移动装置中，可移动基座由于由移动力引起的反作用力而移动，以移动处理基座。

公开(公告)号：US07597531B2

公开(公告)日：2009-10-06

申请号：US11044632

申请日：2005-01-28

申请人： Keiji Okada ,  Michiro Sugitani ,  Yoshitomo Hidaka ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

发明人： Keiji Okada ,  Michiro Sugitani ,  Yoshitomo Hidaka ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

IPC分类号： B65H1/00 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H02K41/00

CPC分类号： H01L21/67706 ,  H01L21/67709 ,  Y10S414/135

摘要： Embodiments of the invention are directed to a method of controlling a mover device The method includes generating a moving force from a moving force generating unit to move a processing base with respect to a movable base, thereby moving the processing base with respect to a fixed base as a result of the movement of the processing base with respect to the movable base; moving the movable base on the fixed base in the opposite direction to the moving direction of the processing base by virtue of a reaction force caused by the moving force generated from the moving force generating unit to move the processing base, so that the movable base moves in the opposite direction to the moving direction of the processing base on the fixed base. The method further includes controlling the moving velocity of the processing base with respect to the fixed base.

摘要翻译： 本发明的实施例涉及一种控制移动器装置的方法。该方法包括从移动力产生单元产生移动力以相对于可移动基座移动处理基座，从而相对于固定基座移动处理基座 作为处理基座相对于可移动基座移动的结果; 通过由从移动力产生单元产生的移动力产生的反作用力使处于移动方向的方向与处理基座的移动方向相反的方向移动到固定基座上，以移动处理基座，使得可移动基座移动 在与固定基座上的处理基座的移动方向相反的方向上。 该方法还包括控制处理基座相对于固定基座的移动速度。

公开(公告)号：US20050188924A1

公开(公告)日：2005-09-01

申请号：US11044632

申请日：2005-01-28

申请人： Keiji Okada ,  Michiro Sugitani ,  Yoshitomo Hidaka ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

发明人： Keiji Okada ,  Michiro Sugitani ,  Yoshitomo Hidaka ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

IPC分类号： G03F7/20 ,  G05D3/12 ,  H01L21/02 ,  H01L21/027 ,  H01L21/677 ,  H01L21/68 ,  C23C16/00

CPC分类号： H01L21/67706 ,  H01L21/67709 ,  Y10S414/135

摘要： A method of controlling a mover device that includes: a fixed base; a movable base that is moveable in a linear direction with respect to the fixed base; a processing base that is movable in a linear direction with respect to the movable base, the linear direction being in parallel with the linear moving direction of the movable base; and a moving force generating unit that is provided between the processing base and the movable base, and forms a main moving unit in cooperation with the processing base and the movable base, includes the steps of: generating a moving force from the moving force generating unit to move the processing base with respect to the movable base, thereby moving the processing base with respect to the fixed base as a result of the movement of the processing base with respect to the movable base; moving the movable base on the fixed base in the opposite direction to the moving direction of the processing base by virtue of a reaction force caused by the moving force generated from the moving force generating unit to move the processing base, so that the movable base moves in the opposite direction to the moving direction of the processing base on the fixed base; and controlling the moving velocity of the processing base with respect to the fixed base.

摘要翻译： 一种控制动子装置的方法，包括：固定基座; 可移动基座，其相对于所述固定基座在直线方向上移动; 处理基座，其相对于可动基座在直线方向上移动，所述线性方向与所述可动基座的线性移动方向平行; 以及设置在所述处理基座和所述可动基座之间并与所述处理基座和所述可动基座协作形成主移动单元的移动力产生单元，包括以下步骤：从所述移动力产生单元产生移动力 相对于可移动基座移动处理基座，从而由于处理基座相对于可移动基座的移动而相对于固定基座移动处理基座; 通过由从移动力产生单元产生的移动力产生的反作用力使处于移动方向的方向与处理基座的移动方向相反的方向移动到固定基座上，以移动处理基座，使得可移动基座移动 在与固定基座上的处理基座的移动方向相反的方向上; 并且控制处理基座相对于固定基座的移动速度。

公开(公告)号：US06573517B1

公开(公告)日：2003-06-03

申请号：US09629622

申请日：2000-07-31

申请人： Michiro Sugitani ,  Mitsukuni Tsukihara ,  Yoshitomo Hidaka ,  Mitsuaki Kabasawa ,  Kouji Inada

发明人： Michiro Sugitani ,  Mitsukuni Tsukihara ,  Yoshitomo Hidaka ,  Mitsuaki Kabasawa ,  Kouji Inada

IPC分类号： H01J3708

CPC分类号： G21K1/08 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/31705

摘要： An ion injecting apparatus has an ion source, a mass-analyzing magnet, an accelerating/decelerating element, and deflecting elements. The mass analyzing magnet mass-analyzes an ion beam extracted from the ion source. The accelerating/de-celerating element accelerates and decelerates the ion beam at a post-stage. The deflecting elements are arranged between the mass analyzing magnet and the accelerating/decelerating element. Each direction angle of the deflecting element is determined such that a final beam trajectory in the predetermined area before being introduced into a wafer substrate is matched to each other in both an operating mode and a non-operating mode of the deflecting elements.

摘要翻译： 离子注入装置具有离子源，质量分析用磁体，加速/减速元件以及偏转元件。 质量分析磁体对从离子源提取的离子束进行质量分析。 加速/去纤维元件在后期加速和减速离子束。 偏转元件布置在质量分析磁体和加速/减速元件之间。 偏转元件的每个方向角被确定为使得在被引入晶片衬底之前的预定区域中的最终光束轨迹在偏转元件的操作模式和非操作模式中彼此匹配。

公开(公告)号：US07315034B2

公开(公告)日：2008-01-01

申请号：US11202101

申请日：2005-08-12

申请人： Takanori Yagita ,  Takashi Nishi ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Masaki Ishikawa ,  Tetsuya Kudo

发明人： Takanori Yagita ,  Takashi Nishi ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Masaki Ishikawa ,  Tetsuya Kudo

IPC分类号： H01J37/147

CPC分类号： H01J37/05 ,  H01J37/317 ,  H01J49/26

摘要： In an irradiation system with an ion beam/charged particle beam having an energy filter, the energy filter is formed by deflection electrodes and a deflection magnet which can be switchingly used. The deflection magnet has a general window-frame shape and is formed with a hollow portion at its center. The deflection electrodes are installed, along with suppression electrodes, in a vacuum chamber arranged in the hollow portion of the deflection magnet. The deflection electrodes are installed with respect to the deflection magnet such that a deflection trajectory of a beam caused by a magnetic field and a deflection trajectory of a beam caused by an electric field overlap each other. Since the deflection electrodes and the deflection magnet can be switchingly used, the system can deal with a wider range of beam conditions and thus is widely usable.

摘要翻译： 在具有能量过滤器的离子束/带电粒子束的照射系统中，能量过滤器由可以切换使用的偏转电极和偏转磁体形成。 偏转磁体具有通常的窗框形状，并且在其中心形成有中空部分。 偏转电极与抑制电极一起安装在布置在偏转磁体的中空部分中的真空室中。 偏转电极相对于偏转磁体安装，使得由电场引起的光束引起的光束的偏转轨迹和由电场引起的偏转轨迹彼此重叠。 由于可以切换使用偏转电极和偏转磁体，所以系统可以处理更宽范围的光束条件，因此可广泛使用。

公开(公告)号：US07304319B2

公开(公告)日：2007-12-04

申请号：US11151308

申请日：2005-06-14

申请人： Hiroshi Kawaguchi ,  Makoto Sano ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Takashi Kuroda ,  Kazunari Ueda ,  Hiroshi Sogabe

发明人： Hiroshi Kawaguchi ,  Makoto Sano ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Takashi Kuroda ,  Kazunari Ueda ,  Hiroshi Sogabe

IPC分类号： H01J37/317

CPC分类号： H01J49/26 ,  H01J37/026 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/0041

摘要： A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.

摘要翻译： 根据本发明的电荷补偿装置用于当来自光束产生源单元的光束照射晶片时，用于抑制晶片的充电。 电荷补偿装置包括至少一个具有至少一个第一提取孔的第一弧形腔和具有面对预定扫描范围的往复摆动梁上的至少一个第二提取孔的第二弧形腔。 第一电弧电压被施加到第一电弧室以在第一电弧室中产生第一等离子体。 所产生的第一等离子体从第一电弧室提取并被引入第二电弧室。 在第二电弧室中产生第二等离子体，并且来自第二电弧室的第二提取等离子体在第二提取孔和往复摆动梁之间形成等离子体桥。

公开(公告)号：US20060113492A1

公开(公告)日：2006-06-01

申请号：US11151308

申请日：2005-06-14

申请人： Hiroshi Kawaguchi ,  Makoto Sano ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Takashi Kuroda ,  Kazunari Ueda ,  Hiroshi Sogabe

发明人： Hiroshi Kawaguchi ,  Makoto Sano ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Takashi Kuroda ,  Kazunari Ueda ,  Hiroshi Sogabe

IPC分类号： H01J37/08

CPC分类号： H01J49/26 ,  H01J37/026 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/0041

摘要： A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.

摘要翻译： 根据本发明的电荷补偿装置用于当来自光束产生源单元的光束照射晶片时，用于抑制晶片的充电。 电荷补偿装置包括至少一个具有至少一个第一提取孔的第一弧形腔和具有面对预定扫描范围的往复摆动梁上的至少一个第二提取孔的第二弧形腔。 第一电弧电压被施加到第一电弧室以在第一电弧室中产生第一等离子体。 所产生的第一等离子体从第一电弧室提取并被引入第二电弧室。 在第二电弧室中产生第二等离子体，并且来自第二电弧室的第二提取等离子体在第二提取孔和往复摆动梁之间形成等离子体桥。

公开(公告)号：US20060113467A1

公开(公告)日：2006-06-01

申请号：US11202101

申请日：2005-08-12

申请人： Takanori Yagita ,  Takashi Nishi ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Masaki Ishikawa ,  Tetsuya Kudo

发明人： Takanori Yagita ,  Takashi Nishi ,  Michiro Sugitani ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Masaki Ishikawa ,  Tetsuya Kudo

IPC分类号： B01D59/44

CPC分类号： H01J37/05 ,  H01J37/317 ,  H01J49/26

摘要： In an irradiation system with an ion beam/charged particle beam having an energy filter, the energy filter is formed by deflection electrodes and a deflection magnet which can be switchingly used. The deflection magnet has a general window-frame shape and is formed with a hollow portion at its center. The deflection electrodes are installed, along with suppression electrodes, in a vacuum chamber arranged in the hollow portion of the deflection magnet. The deflection electrodes are installed with respect to the deflection magnet such that a deflection trajectory of a beam caused by a magnetic field and a deflection trajectory of a beam caused by an electric field overlap each other. Since the deflection electrodes and the deflection magnet can be switchingly used, the system can deal with a wider range of beam conditions and thus is widely usable.

摘要翻译： 在具有能量过滤器的离子束/带电粒子束的照射系统中，能量过滤器由可以切换使用的偏转电极和偏转磁体形成。 偏转磁体具有通常的窗框形状，并且在其中心形成有中空部分。 偏转电极与抑制电极一起安装在布置在偏转磁体的中空部分中的真空室中。 偏转电极相对于偏转磁体安装，使得由电场引起的光束引起的光束的偏转轨迹和由电场引起的偏转轨迹彼此重叠。 由于可以切换使用偏转电极和偏转磁体，所以系统可以处理更宽范围的光束条件，因此可广泛使用。

公开(公告)号：US06797968B2

公开(公告)日：2004-09-28

申请号：US10329560

申请日：2002-12-27

申请人： Mitsukuni Tsukihara ,  Yoshitaka Amano ,  Mitsuaki Kabasawa ,  Michiro Sugitani ,  Hiroki Murooka ,  Hiroshi Matsushita

发明人： Mitsukuni Tsukihara ,  Yoshitaka Amano ,  Mitsuaki Kabasawa ,  Michiro Sugitani ,  Hiroki Murooka ,  Hiroshi Matsushita

IPC分类号： H01J3708

CPC分类号： H01J37/3171 ,  H01J37/3007

摘要： An ion beam processing apparatus comprises a beam line vacuum chamber from an ion source to a processing chamber. The apparatus further comprises a beam line structure for transporting ion beam from the ion source through the beam line vacuum chamber to the processing chamber. A mass analysis magnet unit is arranged from the outside in a partial section of the beam line vacuum chamber. An effective magnetic field area of the mass analysis magnet unit is disposed in a partial section of the beam line structure. Continuous cusp field forming magnet apparatuses are arranged at the series of beam line vacuum chamber part of the beam line structure to confine ion beam by forming continuous cusp fields.

摘要翻译： 离子束处理装置包括从离子源到处理室的束线真空室。 该装置还包括用于将来自离子源的离子束通过束线真空室输送到处理室的束线结构。 在束线真空室的部分部分中从外部布置质量分析磁体单元。 质量分析磁体单元的有效磁场面积设置在束线结构的局部剖面中。 连续尖点场形成磁体装置布置在束线结构的束线真空室系列的一部分中，以通过形成连续尖点场来限制离子束。

公开(公告)号：US06242747B1

公开(公告)日：2001-06-05

申请号：US09336457

申请日：1999-06-18

申请人： Michiro Sugitani ,  Hiroyuki Kariya ,  Mitsukuni Tsukihara ,  Kenji Sawada

发明人： Michiro Sugitani ,  Hiroyuki Kariya ,  Mitsukuni Tsukihara ,  Kenji Sawada

IPC分类号： G21K500

CPC分类号： H05H9/00 ,  H01J2237/31701

摘要： A method and apparatus is provided for controlling the operational parameters of a radio frequency (RF) linear accelerator (linac) (23) in an ion implanter (1). An operator or a higher level computer enters into an input device (10) the desired type of ions, the ionic valence value of ions, the extraction voltage of ion source (21), and the final energy value that is needed. Using internally stored numeric value calculation codes in parameter storage device (18), a control calculation device (11) simulates the ion beam acceleration or deceleration, and the anticipated dispersion of the ion beam, and calculates the RF linac operational parameters of amplitude, frequency and phase for obtaining an optimum transport efficiency. The parameter related to the amplitude is sent from control calculation device (11) to amplitude control device (12) which adjusts the amplitude of the output of RF power supply (15). The parameter related to the phase is sent to phase control device (13), which adjusts the phase of the output of RF power supply (15). The parameter related to the frequency is sent to frequency control device (14). Frequency control device (14) controls the output frequency of RF power supply (15) while it also controls the resonance frequency of RF resonator (23-1) of RF linac (23).

摘要翻译： 提供了一种用于控制离子注入机（1）中的射频（RF）线性加速器（直线加速器）（23））的操作参数的方法和装置。 操作者或更高级计算机进入输入设备（10）所需类型的离子，离子的离子价态值，离子源（21）的提取电压以及所需的最终能量值。 在参数存储装置（18）中使用内部存储的数值计算代码，控制计算装置（11）模拟离子束加速或减速以及离子束的预期色散，并计算振幅频率的RF线性加速器操作参数 和相位，以获得最佳的输送效率。 与振幅相关的参数从控制计算装置（11）发送到调整RF电源（15）的输出幅度的幅度控制装置（12）。 与相位相关的参数发送到相位控制装置（13），该装置调节RF电源输出的相位（15）。 与频率相关的参数发送到频率控制装置（14）。 频率控制装置（14）控制RF电源（15）的输出频率，同时它还控制RF线性加速器（23）的RF谐振器（23-1）的谐振频率。