利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

101 条记录 (耗时 0.025 秒)

    Ion implantation device
    1.
    发明授权
    Ion implantation device 失效
    离子注入装置

    公开(公告)号：US5525807A

    公开(公告)日：1996-06-11

    申请号：US465420

    申请日：1995-06-05

    申请人： Suguru Hirokawa ,  Frank Sinclair ,  Neil E. DeMario

    发明人： Suguru Hirokawa ,  Frank Sinclair ,  Neil E. DeMario

    IPC分类号： H01J37/304 ,  H01J37/317 ,  H01L21/687 ,  H01J37/00

    CPC分类号： H01L21/68728 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/68764 ,  H01L21/68771 ,  H01J2237/202 ,  H01J2237/31703

    摘要： An ion implantation device equipped with a high-speed driving device which causes rotation of the a disk that supports semiconductor wafers around it outer periphery. A center position of the disk is the axis of the rotation of the high speed rotation. A low-speed driving device causes relative movement of the disk in a radial direction. The ion implantation device further has a control circuit which calculates the movement speed of the aforementioned low-speed driving device with reference to different spacings between wafers about the outer periphery and the distance from the center of the disk to the ion implantation position, and controls said low speed scan speed so that ions are uniformly implanted into the aforementioned wafers.

    摘要翻译： 一种配备有高速驱动装置的离子注入装置，其使围绕其外周的半导体晶片支撑的盘的旋转。 盘的中心位置是高速旋转的旋转轴。 低速驱动装置导致盘在径向上的相对运动。 离子注入装置还具有控制电路，该控制电路基于围绕外周的晶片间的不同间隔和从盘的中心到离子注入位置的距离来计算上述低速驱动装置的移动速度，并且控制 所述低速扫描速度使得离子均匀地注入到上述晶片中。

    Ion implantation device
    2.
    发明授权
    Ion implantation device 失效
    离子注入装置

    公开(公告)号：US5608223A

    公开(公告)日：1997-03-04

    申请号：US458354

    申请日：1995-06-02

    申请人： Suguru Hirokawa ,  Frank Sinclair

    发明人： Suguru Hirokawa ,  Frank Sinclair

    IPC分类号： C23C14/48 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265 ,  H01L21/687 ,  G21K5/10

    CPC分类号： H01L21/68728 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/68764 ,  H01L21/68771 ,  H01J2237/202 ,  H01J2237/31703

    摘要： An ion implantation device is equipped with a high-speed driving device which causes rotation of a disk that supports semiconductor wafers around its outer periphery. A center position of the disk is the axis of the high-speed rotation. A low-speed driving device causes relative movement of the disk in a radial direction. The ion implantation device calculates the movement speed of the low-speed driving device with reference to different spacings between wafers about the outer periphery and the distance from the center of the disk to the ion implantation position and controls the low speed scan speed so that ions are uniformly implanted into the wafers.

    摘要翻译： 离子注入装置配备有高速驱动装置，其使围绕其外周支撑半导体晶片的盘的旋转。 盘的中心位置是高速旋转的轴。 低速驱动装置导致盘在径向上的相对运动。 离子注入装置参考围绕外周的晶片间的不同间隔和从盘的中心到离子注入位置的距离来计算低速驱动装置的移动速度，并且控制低速扫描速度，使得离子 均匀地植入晶片。

    Plasma attenuation for uniformity control
    4.
    发明授权
    Plasma attenuation for uniformity control 有权
    用于均匀度控制的等离子体衰减

    公开(公告)号：US08659229B2

    公开(公告)日：2014-02-25

    申请号：US13108052

    申请日：2011-05-16

    申请人： Peter Kurunczi ,  Frank Sinclair ,  Costel Biloiu ,  Ludovic Godet ,  Ernest Allen

    发明人： Peter Kurunczi ,  Frank Sinclair ,  Costel Biloiu ,  Ludovic Godet ,  Ernest Allen

    IPC分类号： H05H1/24

    CPC分类号： H01J37/08 ,  H01J37/3171 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32669

    摘要： A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.

    摘要翻译： 公开了一种等离子体处理装置和方法，其在外壳内产生均匀的等离子体。 在一个实施例中，导电或铁氧体材料用于影响天线的一部分，其中一部分由多个线圈段的部分组成。 在另一个实施例中，铁氧体材料用于影响天线的一部分。 在另一个实施例中，通过改变外壳的内部形状和体积来提高等离子体的均匀性。

    Small form factor plasma source for high density wide ribbon ion beam generation
    5.
    发明授权
    Small form factor plasma source for high density wide ribbon ion beam generation 有权
    用于高密度宽带离子束产生的小尺寸等离子体源

    公开(公告)号：US08590485B2

    公开(公告)日：2013-11-26

    申请号：US12767125

    申请日：2010-04-26

    申请人： Costel Biloiu ,  Jay Scheuer ,  Joseph Olson ,  Frank Sinclair ,  Daniel Distaso

    发明人： Costel Biloiu ,  Jay Scheuer ,  Joseph Olson ,  Frank Sinclair ,  Daniel Distaso

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26

    CPC分类号： H01J37/08 ,  H01J27/16 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/0815 ,  H05H1/30

    摘要： An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.

    摘要翻译： 公开了一种能够利用电感耦合等离子体生产产生高密度宽带状离子束的离子源。 与常规ICP源相反，本公开描述了不是圆柱形的ICP源。 相反，源被限定为使得其宽度（其是提取梁的尺寸）大于其高度。 可以定义源的深度以最大化从天线到等离子体的能量传递。 在另一个实施例中，围绕ICP源的多谐振磁场用于进一步增加电流密度并提高所提取的离子束的均匀性。 离子束均匀性也可以通过几个独立的控制来控制，包括气体流速和输入射频功率。

    System and method for controlling deflection of a charged particle beam within a graded electrostatic lens
    8.
    发明授权
    System and method for controlling deflection of a charged particle beam within a graded electrostatic lens 有权
    用于控制渐变静电透镜内的带电粒子束的偏转的系统和方法

    公开(公告)号：US08129695B2

    公开(公告)日：2012-03-06

    申请号：US12647950

    申请日：2009-12-28

    申请人： Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

    发明人： Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

    IPC分类号： G21K1/06

    CPC分类号： H01J37/3171 ,  H01J37/1477 ,  H01J2237/053 ,  H01J2237/12 ,  H01J2237/24514

    摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.

    摘要翻译： 公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。 该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。 使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。 虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。 在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。 在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。 在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。

    SYSTEM AND METHOD FOR CONTROLLING DEFLECTION OF A CHARGED PARTICLE BEAM WITHIN A GRADED ELECTROSTATIC LENS
    10.
    发明申请
    SYSTEM AND METHOD FOR CONTROLLING DEFLECTION OF A CHARGED PARTICLE BEAM WITHIN A GRADED ELECTROSTATIC LENS 有权
    控制抛光静电镜中带电粒子束的偏移的系统和方法

    公开(公告)号：US20110155921A1

    公开(公告)日：2011-06-30

    申请号：US12647950

    申请日：2009-12-28

    申请人： Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

    发明人： Peter L. Kellerman ,  Frank Sinclair ,  Victor Benveniste ,  Jun Lu

    IPC分类号： G21K1/06 ,  H01J3/14

    CPC分类号： H01J37/3171 ,  H01J37/1477 ,  H01J2237/053 ,  H01J2237/12 ,  H01J2237/24514

    摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.

    摘要翻译： 公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。 该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。 使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。 虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。 在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。 在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。 在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。