公开(公告)号：US20070224522A1

公开(公告)日：2007-09-27

申请号：US11723280

申请日：2007-03-19

申请人： Myoung-soo Lee ,  Dong-wan Kim ,  Sung-min Huh ,  Suk-jong Bae

发明人： Myoung-soo Lee ,  Dong-wan Kim ,  Sung-min Huh ,  Suk-jong Bae

IPC分类号： H01L31/0232 ,  B32B9/00 ,  B32B17/06 ,  G21K5/00 ,  G03F1/00 ,  B32B17/10

CPC分类号： H01L31/18 ,  G03F1/60 ,  Y10T428/31616

摘要： Adjusting a curvature of a substrate includes forming at least one deformed portion in a predetermined region of a substrate, wherein the substrate includes a curved region before forming the at least one deformed portion, and forming the at least one deformed portion includes irradiating the substrate in the predetermined region so as to fixedly displace substrate material in the predetermined region.

摘要翻译： 调整基板的曲率包括在基板的预定区域中形成至少一个变形部分，其中基板在形成至少一个变形部分之前包括弯曲区域，并且形成至少一个变形部分包括将基板 预定区域，以便在预定区域中固定地移位基板材料。

公开(公告)号：US07630079B2

公开(公告)日：2009-12-08

申请号：US11936627

申请日：2007-11-07

申请人： Suk-Jong Bae ,  Myoung-Soo Lee

发明人： Suk-Jong Bae ,  Myoung-Soo Lee

IPC分类号： G01N21/00 ,  G01N21/88 ,  G02F1/33 ,  B23K26/067

CPC分类号： G01N21/59

摘要： Provided are equipment and a method for measuring a transmittance of a photomask. The system includes an acoustic optical deflector (AOD) substrate interposed between a light source and the photomask. The AOD is adapted to deflect a laser beam to an oblique incidence angle with respect to a surface of the photomask. A radio frequency (RF) signal source is coupled with the AOD substrate. Varying the frequency of the signal applied to the AOD substrate acts to change the refractive degree of the substrate, thereby changing an angle of deflection of the incident laser beam. A photodetector is positioned to receive the laser beam passing through the photomask and is adapted to measure an intensity of the laser beam which has penetrated the photomask. As a result, a transmittance of the photomask can be measured under off axis illumination (OAI).

摘要翻译： 提供了用于测量光掩模的透射率的设备和方法。 该系统包括介于光源和光掩模之间的声光偏转器（AOD）基板。 AOD适于使激光束相对于光掩模的表面倾斜入射角度。 射频（RF）信号源与AOD衬底耦合。 改变施加到AOD衬底的信号的频率用于改变衬底的折射度，从而改变入射激光束的偏转角度。 光电检测器被定位成接收通过光掩模的激光束，并适于测量已经穿透光掩模的激光束的强度。 结果，可以在离轴照明（OAI）下测量光掩模的透射率。

公开(公告)号：US07507505B2

公开(公告)日：2009-03-24

申请号：US10578683

申请日：2004-06-08

申请人： Hai Won Lee ,  Sun Woo Lee ,  Jin ho Ahn ,  Suk Jong Bae

发明人： Hai Won Lee ,  Sun Woo Lee ,  Jin ho Ahn ,  Suk Jong Bae

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/2049

摘要： The present invention relates to a method for manufacturing a reflective multi-layered thin film mirror for an extreme ultraviolet radiation (EUV) exposure process that is one of the next generation exposure process masks using an atomic force microscope (AFM). This reflective multi-layered thin film mirror for extreme ultraviolet radiation (EUV) exposure process allows metal oxide structures with fixed height and ' width to be obtained using anodic oxidization phenomenon between the cantilever tip of a atomic force microscope and an absorber material during the patterning of an absorber layer on a multi-layered thin film of a substrate, followed by forming the ultra-fine line width absorber patterns via etching of the metal oxide structure. Use of the manufacturing process of this invention is advantageous in manufacturing of extreme ultraviolet radiation exposure mask mirrors with high resolution and in manufacturing of reflective multi-layered thin film mirrors with minute absorber pattern sizes (less than 20 nm line width) compared to traditional manufacturing methods.

摘要翻译： 本发明涉及一种制造用于使用原子力显微镜（AFM）的下一代曝光处理掩模之一的用于极紫外辐射（EUV）曝光工艺的反射型多层薄膜反射镜的方法。 用于极紫外辐射（EUV）曝光工艺的这种反射多层薄膜反射镜允许在图案化期间在原子力显微镜的悬臂尖端与吸收材料之间使用阳极氧化现象获得具有固定高度和宽度的金属氧化物结构 在基板的多层薄膜上形成吸收层，然后通过蚀刻金属氧化物结构形成超细线宽度的吸收体图案。 使用本发明的制造方法在制造具有高分辨率的极紫外辐射曝光掩模反射镜和制造具有小的吸收体图案尺寸（小于20nm线宽）的反射多层薄膜反射镜相比传统制造方面是有利的 方法。

公开(公告)号：US07646472B2

公开(公告)日：2010-01-12

申请号：US11602974

申请日：2006-11-22

申请人： Myoung-Soo Lee ,  Suk-Jong Bae

发明人： Myoung-Soo Lee ,  Suk-Jong Bae

IPC分类号： G03B27/54 ,  G03B27/62

CPC分类号： G03F7/70108 ,  G03F7/70283

摘要： Provided are an off-axis illumination apparatus, an exposure apparatus, and an off-axis illumination method. The off-axis illumination apparatus may include a mask, a light source for emitting light to the mask, and an incident angle varying section for varying an incident angle of the light. The exposure apparatus may include the off-axis illumination apparatus in addition to a wafer stage and an optical detector. The off-axis illumination method may include irradiating light from the light source to a mask, and moving positions of the light source and the mask to vary an incident angle of the light to the mask.

摘要翻译： 提供离轴照明装置，曝光装置和离轴照明方法。 离轴照明装置可以包括掩模，用于向掩模发射光的光源和用于改变光的入射角的入射角度变化部分。 除了晶片台和光学检测器之外，曝光装置还可以包括离轴照明装置。 离轴照射方法可以包括将来自光源的光照射到掩模，以及光源和掩模的移动位置以改变光与掩模的入射角。

公开(公告)号：US07763397B2

公开(公告)日：2010-07-27

申请号：US11591152

申请日：2006-11-01

申请人： Myoung-Soo Lee ,  Suk-Jong Bae ,  Jung-Hoon Lee ,  Seong-Woo Choi ,  Byung-Gook Kim

发明人： Myoung-Soo Lee ,  Suk-Jong Bae ,  Jung-Hoon Lee ,  Seong-Woo Choi ,  Byung-Gook Kim

IPC分类号： G03F1/00

CPC分类号： G03F1/72 ,  G03F1/38 ,  G03F1/60

摘要： Provided are photomask registration errors of which have been corrected and a method of correcting the registration errors of a photomask. The photomask includes a photomask substrate, an optical pattern formed on one surface of the photomask substrate, and a plurality of stress generation portions formed in the photomask substrate. A method of correcting the registration errors of a photomask includes the steps of forming an optical pattern on a photomask substrate, measuring the registration errors of the optical pattern, and forming a plurality of stress generation portions in the photomask substrate so that the stress generation portions correspond to the measured registration errors.

摘要翻译： 提供了其光掩模配准错误已被校正，以及校正光掩模的配准误差的方法。 光掩模包括光掩模基板，形成在光掩模基板的一个表面上的光学图案，以及形成在光掩模基板中的多个应力产生部。 校正光掩模的配准误差的方法包括以下步骤：在光掩模衬底上形成光学图案，测量光学图案的配准误差，以及在光掩模衬底中形成多个应力产生部分，使得应力产生部分 对应于测量的注册错误。

公开(公告)号：US20080130002A1

公开(公告)日：2008-06-05

申请号：US11936627

申请日：2007-11-07

申请人： Suk-Jong BAE ,  Myoung-Soo LEE

发明人： Suk-Jong BAE ,  Myoung-Soo LEE

IPC分类号： G01N21/00

CPC分类号： G01N21/59

摘要： Provided are equipment and a method for measuring a transmittance of a photomask. The system includes an acoustic optical deflector (AOD) substrate interposed between a light source and the photomask. The AOD is adapted to deflect a laser beam to an oblique incidence angle with respect to a surface of the photomask. A radio frequency (RF) signal source is coupled with the AOD substrate. Varying the frequency of the signal applied to the AOD substrate acts to change the refractive degree of the substrate, thereby changing an angle of deflection of the incident laser beam. A photodetector is positioned to receive the laser beam passing through the photomask and is adapted to measure an intensity of the laser beam which has penetrated the photomask. As a result, a transmittance of the photomask can be measured under off axis illumination (OAI).

摘要翻译： 提供了用于测量光掩模的透射率的设备和方法。 该系统包括介于光源和光掩模之间的声光偏转器（AOD）基板。 AOD适于使激光束相对于光掩模的表面倾斜入射角度。 射频（RF）信号源与AOD衬底耦合。 改变施加到AOD衬底的信号的频率用于改变衬底的折射度，从而改变入射激光束的偏转角度。 光电检测器被定位成接收通过光掩模的激光束，并适于测量已经穿透光掩模的激光束的强度。 结果，可以在离轴照明（OAI）下测量光掩模的透射率。

公开(公告)号：US20080032206A1

公开(公告)日：2008-02-07

申请号：US11591152

申请日：2006-11-01

申请人： Myoung-Soo Lee ,  Suk-Jong Bae ,  Jung-Hoon Lee ,  Seong-Woo Choi ,  Byung-Gook Kim

发明人： Myoung-Soo Lee ,  Suk-Jong Bae ,  Jung-Hoon Lee ,  Seong-Woo Choi ,  Byung-Gook Kim

IPC分类号： G03C5/00 ,  G21K5/00 ,  G03F1/00

CPC分类号： G03F1/72 ,  G03F1/38 ,  G03F1/60

摘要： Provided are photomask registration errors of which have been corrected and a method of correcting the registration errors of a photomask. The photomask includes a photomask substrate, an optical pattern formed on one surface of the photomask substrate, and a plurality of stress generation portions formed in the photomask substrate. A method of correcting the registration errors of a photomask includes the steps of forming an optical pattern on a photomask substrate, measuring the registration errors of the optical pattern, and forming a plurality of stress generation portions in the photomask substrate so that the stress generation portions correspond to the measured registration errors.

摘要翻译： 提供了其光掩模配准错误已被校正，以及校正光掩模的配准误差的方法。 光掩模包括光掩模基板，形成在光掩模基板的一个表面上的光学图案，以及形成在光掩模基板中的多个应力产生部。 校正光掩模的配准误差的方法包括以下步骤：在光掩模衬底上形成光学图案，测量光学图案的配准误差，以及在光掩模衬底中形成多个应力产生部分，使得应力产生部分 对应于测量的注册错误。

公开(公告)号：US20070146671A1

公开(公告)日：2007-06-28

申请号：US11602974

申请日：2006-11-22

申请人： Myoung-Soo Lee ,  Suk-Jong Bae

发明人： Myoung-Soo Lee ,  Suk-Jong Bae

IPC分类号： G03B27/52

CPC分类号： G03F7/70108 ,  G03F7/70283

摘要： Provided are an off-axis illumination apparatus, an exposure apparatus, and an off-axis illumination method. The off-axis illumination apparatus may include a mask, a light source for emitting light to the mask, and an incident angle varying section for varying an incident angle of the light. The exposure apparatus may include the off-axis illumination apparatus in addition to a wafer stage and an optical detector. The off-axis illumination method may include irradiating light from the light source to a mask, and moving positions of the light source and the mask to vary an incident angle of the light to the mask.

摘要翻译： 提供离轴照明装置，曝光装置和离轴照明方法。 离轴照明装置可以包括掩模，用于向掩模发射光的光源和用于改变光的入射角的入射角度变化部分。 除了晶片台和光学检测器之外，曝光装置还可以包括离轴照明装置。 离轴照射方法可以包括将来自光源的光照射到掩模，以及光源和掩模的移动位置以改变光与掩模的入射角。