Photomask registration errors of which have been corrected and method of correcting registration errors of photomask
    1.
    发明授权
    Photomask registration errors of which have been corrected and method of correcting registration errors of photomask 有权
    已修正光掩模配准错误,修正光掩膜配准错误的方法

    公开(公告)号:US07763397B2

    公开(公告)日:2010-07-27

    申请号:US11591152

    申请日:2006-11-01

    IPC分类号: G03F1/00

    CPC分类号: G03F1/72 G03F1/38 G03F1/60

    摘要: Provided are photomask registration errors of which have been corrected and a method of correcting the registration errors of a photomask. The photomask includes a photomask substrate, an optical pattern formed on one surface of the photomask substrate, and a plurality of stress generation portions formed in the photomask substrate. A method of correcting the registration errors of a photomask includes the steps of forming an optical pattern on a photomask substrate, measuring the registration errors of the optical pattern, and forming a plurality of stress generation portions in the photomask substrate so that the stress generation portions correspond to the measured registration errors.

    摘要翻译: 提供了其光掩模配准错误已被校正,以及校正光掩模的配准误差的方法。 光掩模包括光掩模基板,形成在光掩模基板的一个表面上的光学图案,以及形成在光掩模基板中的多个应力产生部。 校正光掩模的配准误差的方法包括以下步骤:在光掩模衬底上形成光学图案,测量光学图案的配准误差,以及在光掩模衬底中形成多个应力产生部分,使得应力产生部分 对应于测量的注册错误。

    Photomask registration errors of which have been corrected and method of correcting registration errors of photomask
    2.
    发明申请
    Photomask registration errors of which have been corrected and method of correcting registration errors of photomask 有权
    已修正光掩模配准错误,修正光掩膜配准错误的方法

    公开(公告)号:US20080032206A1

    公开(公告)日:2008-02-07

    申请号:US11591152

    申请日:2006-11-01

    IPC分类号: G03C5/00 G21K5/00 G03F1/00

    CPC分类号: G03F1/72 G03F1/38 G03F1/60

    摘要: Provided are photomask registration errors of which have been corrected and a method of correcting the registration errors of a photomask. The photomask includes a photomask substrate, an optical pattern formed on one surface of the photomask substrate, and a plurality of stress generation portions formed in the photomask substrate. A method of correcting the registration errors of a photomask includes the steps of forming an optical pattern on a photomask substrate, measuring the registration errors of the optical pattern, and forming a plurality of stress generation portions in the photomask substrate so that the stress generation portions correspond to the measured registration errors.

    摘要翻译: 提供了其光掩模配准错误已被校正,以及校正光掩模的配准误差的方法。 光掩模包括光掩模基板,形成在光掩模基板的一个表面上的光学图案,以及形成在光掩模基板中的多个应力产生部。 校正光掩模的配准误差的方法包括以下步骤:在光掩模衬底上形成光学图案,测量光学图案的配准误差,以及在光掩模衬底中形成多个应力产生部分,使得应力产生部分 对应于测量的注册错误。

    PATTERN FORMING METHOD
    4.
    发明申请
    PATTERN FORMING METHOD 有权
    图案形成方法

    公开(公告)号:US20120148959A1

    公开(公告)日:2012-06-14

    申请号:US13399090

    申请日:2012-02-17

    IPC分类号: G03F7/22 G03F7/20

    摘要: A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.

    摘要翻译: 图案形成方法包括:提供具有第一孔的第一掩模,通过照射通过第一孔的第一电子束,在抗蚀剂上形成第一转印图案,第一转印图案沿着第一方向延伸并沿着其圆周具有边界 并且所述第一电子束在从所述第一孔出射时具有第一正方形的横截面,并且通过照射通过所述第一孔的第二电子束在所述抗蚀剂上形成第二转移图案,所述第二转移图案沿所述第一方向延伸 并且当从第一孔径出现时,与第一转印图案的边界的一部分重叠,并且第二电子束具有第二正方形的横截面。

    PHOTOMASKS AND METHODS OF FABRICATING THE SAME
    5.
    发明申请
    PHOTOMASKS AND METHODS OF FABRICATING THE SAME 有权
    照相机及其制作方法

    公开(公告)号:US20120100465A1

    公开(公告)日:2012-04-26

    申请号:US13231313

    申请日:2011-09-13

    IPC分类号: G03F1/00

    CPC分类号: G03F1/50 G03F1/54

    摘要: A photomask includes a pattern area and a blind area, a first opaque pattern disposed on the blind area and having a first thickness, and a second opaque pattern disposed on the pattern area and having a second thickness smaller than the first thickness. The first and second opaque patterns are formed of the same material.

    摘要翻译: 光掩模包括图案区域和盲区,设置在盲区上并具有第一厚度的第一不透明图案和布置在图案区域上并且具有小于第一厚度的第二厚度的第二不透明图案。 第一和第二不透明图案由相同的材料形成。

    Method for manufacturing photomask and photomask manufactured using the same
    6.
    发明授权
    Method for manufacturing photomask and photomask manufactured using the same 有权
    制造使用其制造光掩模和光掩模的方法

    公开(公告)号:US08673522B2

    公开(公告)日:2014-03-18

    申请号:US13571043

    申请日:2012-08-09

    IPC分类号: G03F1/38

    CPC分类号: G03F1/44

    摘要: A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.

    摘要翻译: 光掩模的制造方法包括在基板上形成光致抗蚀剂膜,在光致抗蚀剂膜上形成缺陷检测图案。 缺陷检测图案具有沿第一方向延伸的第一图案和与第一图案的一端重叠的第二图案,并且在与第一方向不同的第二方向上延伸。 使用由同一放大器衍射的电子束(e-beam)形成第一图案和第二图案。

    METHOD FOR SUPPLYING POWER TO MEMORY CARD AND MEMORY CARD SYSTEM
    7.
    发明申请
    METHOD FOR SUPPLYING POWER TO MEMORY CARD AND MEMORY CARD SYSTEM 审中-公开
    向存储卡和存储卡系统供电的方法

    公开(公告)号:US20080189564A1

    公开(公告)日:2008-08-07

    申请号:US11970364

    申请日:2008-01-07

    IPC分类号: G06F12/00 G06F1/26

    CPC分类号: G06F1/266

    摘要: A method for supplying power to a memory card in a memory card system includes detecting a completion time of a write operation of the memory card, generating a power off strobe signal, the power off strobe signal supplied to the memory card after a predetermined delay time passes from the detected complete time of the write operation, and cutting off power supplied to the memory card using the host after a predetermined power off delay time passes from the time when the power off strobe signal is generated.

    摘要翻译: 一种用于向存储卡系统中的存储卡供电的方法包括检测存储卡的写入操作的完成时间,产生掉电选通信号,在预定的延迟时间之后提供给存储卡的断电选通信号 从检测到的写入操作的完成时间过去,并且在从产生电源关闭选通信号的时间经过预定的断电延迟时间之后,使用主机切断提供给存储卡的电力。

    System and method for measuring dimension of patterns formed on photomask
    8.
    发明授权
    System and method for measuring dimension of patterns formed on photomask 失效
    用于测量在光掩模上形成的图案的尺寸的系统和方法

    公开(公告)号:US07369254B2

    公开(公告)日:2008-05-06

    申请号:US11151742

    申请日:2005-06-13

    IPC分类号: G01N21/00

    CPC分类号: G01B11/24 G03F1/84

    摘要: A system for measuring dimension of photomasks comprises a light source emitting measuring light having a wavelength, a transmission detector for receiving the measuring light, a stage on which a photomask having circuit patterns is placed, the stage being disposed between the light source and the transmission detector, and a controller having a dimension-deciding algorithm to determine a dimension of the circuit patterns from a spectroscopic characteristic of the received measuring light, the controller being connected to the transmission detector.

    摘要翻译: 用于测量光掩模尺寸的系统包括发射具有波长的测量光的光源,用于接收测量光的透射检测器,放置有电路图案的光掩模的级,该级设置在光源和传输器之间 检测器和具有尺寸决定算法的控制器,以根据所接收的测量光的光谱特性来确定电路图案的尺寸,所述控制器连接到所述传输检测器。

    Photomasks and methods of fabricating the same
    9.
    发明授权
    Photomasks and methods of fabricating the same 有权
    光掩模及其制造方法

    公开(公告)号:US08592105B2

    公开(公告)日:2013-11-26

    申请号:US13231313

    申请日:2011-09-13

    IPC分类号: G03F1/00

    CPC分类号: G03F1/50 G03F1/54

    摘要: A photomask includes a pattern area and a blind area, a first opaque pattern disposed on the blind area and having a first thickness, and a second opaque pattern disposed on the pattern area and having a second thickness smaller than the first thickness. The first and second opaque patterns are formed of the same material.

    摘要翻译: 光掩模包括图案区域和盲区,设置在盲区上并具有第一厚度的第一不透明图案和布置在图案区域上并且具有小于第一厚度的第二厚度的第二不透明图案。 第一和第二不透明图案由相同的材料形成。

    METHOD FOR MANUFACTURING PHOTOMASK AND PHOTOMASK MANUFACTURED USING THE SAME
    10.
    发明申请
    METHOD FOR MANUFACTURING PHOTOMASK AND PHOTOMASK MANUFACTURED USING THE SAME 有权
    使用其制造光电子和光电子的方法

    公开(公告)号:US20130143150A1

    公开(公告)日:2013-06-06

    申请号:US13571043

    申请日:2012-08-09

    IPC分类号: G03F1/44

    CPC分类号: G03F1/44

    摘要: A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.

    摘要翻译: 光掩模的制造方法包括在基板上形成光致抗蚀剂膜,在光致抗蚀剂膜上形成缺陷检测图案。 缺陷检测图案具有沿第一方向延伸的第一图案和与第一图案的一端重叠的第二图案,并且在与第一方向不同的第二方向上延伸。 使用由同一放大器衍射的电子束(e-beam)形成第一图案和第二图案。