摘要:
Provided are photomask registration errors of which have been corrected and a method of correcting the registration errors of a photomask. The photomask includes a photomask substrate, an optical pattern formed on one surface of the photomask substrate, and a plurality of stress generation portions formed in the photomask substrate. A method of correcting the registration errors of a photomask includes the steps of forming an optical pattern on a photomask substrate, measuring the registration errors of the optical pattern, and forming a plurality of stress generation portions in the photomask substrate so that the stress generation portions correspond to the measured registration errors.
摘要:
Provided are photomask registration errors of which have been corrected and a method of correcting the registration errors of a photomask. The photomask includes a photomask substrate, an optical pattern formed on one surface of the photomask substrate, and a plurality of stress generation portions formed in the photomask substrate. A method of correcting the registration errors of a photomask includes the steps of forming an optical pattern on a photomask substrate, measuring the registration errors of the optical pattern, and forming a plurality of stress generation portions in the photomask substrate so that the stress generation portions correspond to the measured registration errors.
摘要:
Provided are a photonic memory device, a method of storing data using the photonic memory device, and a photonic sensor device. The photonic memory device comprises a signal line through which a photon is input; a ring resonator receiving a photon through an input gap that is adjacent to the signal line and storing the photon; and a detect line outputting the photon stored in the ring resonator through an output gap that is adjacent to the ring resonator, wherein data is read/written and stored/deleted by the input/output of the photon.
摘要:
The non-volatile memory device may include a semiconductor substrate having a body and a pair of fins. A bridge insulating layer may non-electrically connect upper portions of the pair of fins to define a void between the pair of fins. Outer surfaces of the pair of fins are the surfaces of the pair of fins that do not face the void and inner surfaces of the pair of fins are the surfaces of the pair of fins that do face the void. The non-volatile memory device may further include at least one control gate electrode that may cover at least a portion of outer surfaces of the pair of fins, may extend over the bridge insulating layer, and may be isolated from the semiconductor substrate. At least one pair of gate insulating layers may be between the at least one control gate electrode and the pair of fins, and at least one pair of storage nodes may be between the at least one pair of gate insulating layers and the at least one control gate electrode.
摘要:
According to the present invention, it is possible to easily provide a polymeric macroparticle of which surface is modified with mesoparticles and nanoparticles, by the step of adhering mesoparticles and nanoparticles to the surface of said polymeric macroparticle to form a composite structure of nanoparticle-mesoparticle-macroparticle, and optionally subjecting to a heat treatment to fix said mesoparticles and nanoparticles onto the surface of macroparticle. In addition, a nanoparticle-polymer composite materials can be provide from the above polymeric macroparticles of which surface is modified with mesoparticles and nanoparticles.
摘要:
Disclosed herein are a probe and a method of making the same, and more particularly to a probe having a minute pitch, with which a probe card corresponding to arrangement of pads formed with a massed shape or other various shapes on a wafer is made, and a method of making the same. The probe having a prescribed thickness and formed in the shape of a flat plate. The probe comprises a body part bent at the middle thereof so that the body part is elastically tensioned or compressed when a tension force or a compression force is applied to the body part at the upper and lower ends thereof, a connection part integrally formed with the lower end of the body part, the connection part being fixed to a substrate, and a tip part integrally formed with the upper end of the body part, the tip part contacting a pad of an element.
摘要:
The non-volatile memory device may include a semiconductor substrate having a body and a pair of fins. A bridge insulating layer may non-electrically connect upper portions of the pair of fins to define a void between the pair of fins. Outer surfaces of the pair of fins are the surfaces of the pair of fins that do not face the void and inner surfaces of the pair of fins are the surfaces of the pair of fins that do face the void. The non-volatile memory device may further include at least one control gate electrode that may cover at least a portion of outer surfaces of the pair of fins, may extend over the bridge insulating layer, and may be isolated from the semiconductor substrate. At least one pair of gate insulating layers may be between the at least one control gate electrode and the pair of fins, and at least one pair of storage nodes may be between the at least one pair of gate insulating layers and the at least one control gate electrode.
摘要:
A method is provided for controlling a cache system. The cache system to be controlled comprises a direct-mapped cache configured with a small block size, and a fully associative spatial buffer configured with a large block, which includes a plurality of small blocks. Where accesses to the direct-mapped cache and the fully associative buffer are misses, data of a missed address and data of adjacent addresses are copied to the large block in the fully associative spatial buffer according to a first-in-first-out (FIFO) process. Furthermore, if one or more small data blocks is accessed among its corresponding large block of data which is to be expelled from the fully associative buffer, the small block(s) accessed is copied to the direct-mapped cache.
摘要:
A translation look-aside buffer (TLB) capable of reducing power consumption and improving performance of a memory is provided. The fully-associative TLB which converts a virtual address into a physical address, comprises a first TLB having a plurality of banks; a second TLB having a plurality of entries, each of which having one virtual page number and 2N physical page numbers, wherein N is a natural number; and a selection circuit for outputting an output signal of the first TLB to the second TLB in response to a selection signal, wherein each bank of the first TLB has a plurality of entries, each of which has one virtual page number and one physical page number. The size of a page indicated by a virtual page number of the first TLB is different from the size of a page indicated by a virtual page number of the second TLB.
摘要:
A case for carrying and mounting an image system in a car includes a first case member for accommodating an image reproducing device therein, a second case member for accommodating a display device therein, a fastening device for selectively fastening the second case member to a top portion of the first case member, and one or more mounting straps for detachably mounting the first case member to a seat in the car. The first case member has an opening formed at the top portion thereof and an edge of the second case member is rotatably connected to the top portion of the first case member, so that the second case member selectively opens or closes the opening. The mounting straps are connected to the first case member.