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    FLAT TUBULAR SOLID-OXIDE FUEL CELL, AND FLAT TUBULAR SOLID-OXIDE WATER ELECTROLYSIS APPARATUS
    1.
    发明申请
    FLAT TUBULAR SOLID-OXIDE FUEL CELL, AND FLAT TUBULAR SOLID-OXIDE WATER ELECTROLYSIS APPARATUS 审中-公开
    平板管固体氧化物燃料电池和平板管固体氧化物电解电容器

    公开(公告)号：US20130330648A1

    公开(公告)日：2013-12-12

    申请号：US14000896

    申请日：2012-02-24

    申请人： Sun-Dong Kim ,  In-Sub Han ,  Doo-Won Seo ,  Ji-Haeng Yu ,  Se-Young Kim ,  Sang-Kuk Woo

    发明人： Sun-Dong Kim ,  In-Sub Han ,  Doo-Won Seo ,  Ji-Haeng Yu ,  Se-Young Kim ,  Sang-Kuk Woo

    IPC分类号： H01M8/24 ,  H01M8/10 ,  H01M8/00 ,  C25B9/18

    CPC分类号： C25B9/18 ,  H01M8/0282 ,  H01M8/1213 ,  H01M8/243 ,  H01M8/2485 ,  H01M2008/1293 ,  Y02E60/366

    摘要： The present invention relates to a flat tubular solid-oxide fuel cell and to a water electrolysis apparatus. More particularly, the present invention relates to a flat tubular solid-oxide fuel cell and to a water electrolysis apparatus, wherein the flat tubular solid-oxide fuel cell comprises: a cell stack including a plurality of flat tubular unit cells; and first manifolds which are made of ceramic materials, and each of which has a first reaction gas inlet/outlet portion for the entry/exit of a first reaction gas to/from the cell stack and a first insertion portion for the insertion of either of the two ends of the cell stack, wherein the first manifolds are arranged at both ends of the cell stack, respectively, to thereby simplify the structure of the fuel cell and minimize the number of sealing portions in order to reduce the loss of reaction gas or the like.

    摘要翻译： 本发明涉及扁平管状固体氧化物燃料电池和水电解装置。 更具体地说，本发明涉及扁平管状固体氧化物燃料电池和水电解装置，其中扁平管状固体氧化物燃料电池包括：包括多个扁平管状单电池的电池堆; 以及由陶瓷材料制成的第一歧管，并且每个歧管具有用于使第一反应气体进入/离开电池堆的入口/出口的第一反应气体入口/出口部分和用于插入 电池堆的两端，其中第一歧管分别布置在电池堆的两端，从而简化燃料电池的结构并使密封部分的数量最小化，以减少反应气体的损失或 类似。

    Process for hydrotreatment of a heavy hydrocarbon fraction using permutable reactors and introduction of a middle distillate
    2.
    发明授权
    Process for hydrotreatment of a heavy hydrocarbon fraction using permutable reactors and introduction of a middle distillate 有权
    使用可置换反应器和引入中间馏出物对重质烃馏分进行加氢处理的方法

    公开(公告)号：US06306287B1

    公开(公告)日：2001-10-23

    申请号：US09417766

    申请日：1999-10-14

    申请人： Alain Billon ,  Frédéric Morel ,  Stéphane Kressmann ,  Sun Dong Kim ,  Sung Ki Ha ,  Haen Heor

    发明人： Alain Billon ,  Frédéric Morel ,  Stéphane Kressmann ,  Sun Dong Kim ,  Sung Ki Ha ,  Haen Heor

    IPC分类号： C10G6502

    CPC分类号： C10G65/04

    摘要： A hydrotreatment process is carried out in at least two steps to hydrotreat a heavy hydrocarbon fraction containing asphaltenes, sulphur-containing impurities and metallic impurities, comprising a first hydrodemetallization step and a subsequent second hydrodesulphurization step, in which the hydrodemetallization step comprises one or more hydrodemetallization zones with fixed beds preceded by at least two hydrodemetallization guard zones (A) and (B), also with fixed beds, disposed in series for cyclic use consisting of successive repetition of steps b) and c) defined below. The process comprises the following steps: a) a step in which the guard zones are used together for a period of at most equal to the deactivation time and/or clogging time of one thereof, b) a step during which the deactivated and/or clogged guard zone is short-circuited and the catalyst it contains is regenerated and/or replaced by fresh catalyst, and c) a step during which the guard zones (A) and (B) are used together, the guard zone where the catalyst has been regenerated during the preceding step being reconnected and said step being carried out for a period at most equal to the deactivation and/or clogging time of one of the guard zones. The process is characterized by introducing a quantity of middle distillate, particularly a gas oil, with the feed representing 0.5% to 80% by weight with respect to the feed. The process can comprise a prior hydrovisbreaking step and optionally a final deasphalting step using a solvent.

    摘要翻译： 在至少两个步骤中进行加氢处理工艺以加氢处理含有沥青质，含硫杂质和金属杂质的重质烃馏分，其包括第一加氢脱金属步骤和随后的第二加氢脱硫步骤，其中加氢脱金属步骤包括一个或多个加氢脱金属化 具有固定床的区域先于至少两个加氢脱金属保护区域（A）和（B），还具有用于循环使用的串联的固定床，其包括以下定义的连续重复步骤b）和c）。 该方法包括以下步骤：a）将保护区一起使用至多等于其中一个的去活化时间和/或堵塞时间的时间段的步骤，b）其中停用和/或 堵塞的保护区短路，其中含有的催化剂被新鲜的催化剂再生和/或替代，以及c）保护区（A）和（B）一起使用的步骤，催化剂具有的保护区 在上一步骤期间重新连接并且所述步骤进行的时间最多等于其中一个防护区域的停用和/或堵塞时间。 该方法的特征在于引入一定量的中间馏分，特别是瓦斯油，其中进料相对于进料为重量的0.5％至80％。 该方法可以包括先前的加氢脱硫步骤和任选的使用溶剂的最终脱沥青步骤。

    Fabrication method for semiconductor package substrate and semiconductor package
    3.
    发明授权
    Fabrication method for semiconductor package substrate and semiconductor package 失效
    半导体封装基板和半导体封装的制造方法

    公开(公告)号：US5963796A

    公开(公告)日：1999-10-05

    申请号：US27185

    申请日：1998-02-20

    申请人： Sun Dong Kim

    发明人： Sun Dong Kim

    IPC分类号： H01L23/24 ,  H01L23/367 ,  H01L23/498 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

    CPC分类号： H01L23/24 ,  H01L23/3677 ,  H01L23/49822 ,  H01L23/49861 ,  H01L2224/451 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/181

    摘要： A fabrication method for a chip package includes the steps of forming a first substrate having embedded leads, forming a second substrate with embedded leads and a central aperture therethrough, and attaching the second substrate to the first substrate to form a substrate with a recess for receiving a chip. A chip may then be mounted within the central aperture of the second substrate, on the first substrate, and bond pads of the chip may be attached to leads exposed on one of the first and second substrates with a plurality of metal wires. A resin may be molded over the device to protect the metal wires, the chip, and the leads.

    摘要翻译： 芯片封装的制造方法包括以下步骤：形成具有嵌入引线的第一衬底，形成具有嵌入引线的第二衬底和穿过其的中心孔，以及将第二衬底附接到第一衬底以形成具有用于接收的凹部的衬底 一个芯片 然后可以将芯片安装在第二基板的中心孔中，在第一基板上，并且芯片的接合焊盘可以用多个金属线连接到暴露在第一和第二基板之一上的引线上。 可以在器件上模制树脂以保护金属线，芯片和引线。

    Flat tubular or plate type solid oxide fuel cell
    4.
    发明授权
    Flat tubular or plate type solid oxide fuel cell 有权
    扁平管状或板状固体氧化物燃料电池

    公开(公告)号：US09123917B2

    公开(公告)日：2015-09-01

    申请号：US13993527

    申请日：2011-12-16

    申请人： Ji-Haeng Yu ,  Hee-Lak Lee ,  In-Sub Han ,  Doo-Won Seo ,  Kee-Seog Hong ,  Se-Young Kim ,  Sang-Kuk Woo ,  Sun-Dong Kim

    发明人： Ji-Haeng Yu ,  Hee-Lak Lee ,  In-Sub Han ,  Doo-Won Seo ,  Kee-Seog Hong ,  Se-Young Kim ,  Sang-Kuk Woo ,  Sun-Dong Kim

    IPC分类号： H01M8/02 ,  H01M8/12 ,  H01M8/24

    CPC分类号： H01M8/0202 ,  H01M8/0271 ,  H01M8/0297 ,  H01M8/1213 ,  H01M8/2425 ,  H01M8/243 ,  H01M8/2457 ,  H01M8/2483 ,  Y02E60/521 ,  Y02E60/525

    摘要： The present invention relates to a solid oxide fuel cell, which includes a plurality of unit cells and a connection layer between the plurality of unit cells, wherein each of the unit cells includes an anode, a cathode and a solid electrolyte between the anode and the cathode, and the connection layer includes i) a first layer containing La-ferrite including one or more selected from the group consisting of Sr, Ca and Ba; and ii) a second layer containing La-ferrite including one or more selected from the group consisting of Sr, Ca and Ba, and one or more cerias selected from the group consisting of GDC (Gd doped ceria), LDC (La-doped ceria) and SDC (Sm-doped ceria), wherein the first layer is in contact with the cathode of each of the unit cells and the second layer is in contact with the anode of each of the unit cells.

    摘要翻译： 固体氧化物燃料电池本发明涉及固体氧化物燃料电池，其包括多个单位电池和多个单电池之间的连接层，其中每个单电池包括在阳极和阳极之间的阳极，阴极和固体电解质 阴极，并且所述连接层包括i）包含选自Sr，Ca和Ba中的一种或多种的包含La-铁氧体的第一层; 和ii）含有选自Sr，Ca和Ba中的一种或多种的La-铁氧体的第二层和选自GDC（Gd掺杂的二氧化铈），LDC（La掺杂的二氧化铈 ）和SDC（Sm掺杂二氧化铈），其中第一层与每个单元电池的阴极接触，并且第二层与每个单元电池的阳极接触。

    Switch device and horn switch having the structure of the switch device
    6.
    发明授权
    Switch device and horn switch having the structure of the switch device 有权
    具有开关装置结构的开关装置和喇叭开关

    公开(公告)号：US06974919B2

    公开(公告)日：2005-12-13

    申请号：US10883145

    申请日：2004-07-01

    申请人： Naoki Mori ,  Yasuo Takii ,  Sun Dong Kim

    发明人： Naoki Mori ,  Yasuo Takii ,  Sun Dong Kim

    IPC分类号： H01H13/52 ,  H01H13/14 ,  H01H13/20 ,  H01H23/14 ,  H01H25/06 ,  H01H9/00

    CPC分类号： H01H23/143 ,  H01H2221/018

    摘要： A switch device whose assembly is easily performed with a simple structure and that has low manufacturing costs includes a case having a rectangular-shaped long groove, a long operating knob held in a vertically movable manner in the long groove, a plurality of operating bodies provided in the longitudinal direction of the long operating knob and operated with the vertical movement of the long operating knob, movable contacts respectively provided below the operating bodies, and a base on which the movable contacts and fixed contacts are mounted such that they can come in contact with or separate from each other. When the long operating knob is pressed, at least one of the plurality of operating bodies is pressed, causing the movable contacts provided below the operating bodies to come in contact with the fixed contacts.

    摘要翻译： 一种开关装置，其结构简单，制造成本低，容易进行，具有矩形长槽，在长槽中可垂直移动的长操作旋钮的壳体，设置有多个操作体 在长操作旋钮的纵向方向上，并且通过长操作旋钮的垂直运动操作，分别设置在操作体下方的可动触头以及安装有可动触头和固定触点的基座，使得它们可以接触 与彼此或彼此分离。 当按压长操作旋钮时，多个操作体中的至少一个被按压，使得设置在操作体下方的可动触点与固定触点接触。

    Stacked semiconductor package and fabricating method thereof
    8.
    发明授权
    Stacked semiconductor package and fabricating method thereof 失效

    公开(公告)号：US06627480B2

    公开(公告)日：2003-09-30

    申请号：US10003343

    申请日：2001-12-06

    申请人： Sun-Dong Kim

    发明人： Sun-Dong Kim

    IPC分类号： H01L2940

    CPC分类号： H01L25/0657 ,  H01L23/5387 ,  H01L2225/0652 ,  H01L2225/06551 ,  H01L2225/06575 ,  H01L2225/06579 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A stacked semiconductor package is formed by forming a semiconductor wafer having a plurality of semiconductor chips with chip pads on their upper sides, where the chips are arranged in pairs; sawing the wafer along edges of the semiconductor chips; adhering a bonding tape to adjacent pairs of the semiconductor chips, wherein conductive interconnections on the bonding tape electrically couple corresponding chip pads of adjacent chips; cutting the bonding tape so that only adjacent pairs of the chips remain attached to one another; and stacking the adjacent pairs of semiconductor chips so that the upper sides of the chips are substantially parallel. The method may include an additional step of adhering a plurality of solder balls on the bonding tape to serve as external leads of the package. Further, the adjacent pairs of semiconductor chips may be attached to opposite sides of a heat conducting plate which serves to dissipate heat generated by the chips.