公开(公告)号：US20240347339A1

公开(公告)日：2024-10-17

申请号：US18301493

申请日：2023-04-17

申请人： Syrnatec, Inc.

发明人： Yash Suresh Mirchandani ,  Nishita Suresh Mirchandani ,  Alexander Usenko

IPC分类号： H01L21/18 ,  B24B37/11 ,  H01L21/02 ,  H01L21/04 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/324 ,  H01L21/67 ,  H01L23/14

CPC分类号： H01L21/185 ,  B24B37/11 ,  H01L21/02378 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/0445 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32055 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/67075 ,  H01L21/67098 ,  H01L23/147

摘要： Methods and systems for making a composite substrate is provided. The method includes depositing a silicon layer on a surface of a silicon carbide wafer. The method includes smoothing the deposited silicon layer by Chemical Mechanical Polishing (CMP) and first annealing to produce a flat silicon surface on the silicon carbide wafer. The method includes bonding the flat silicon surface of the silicon carbide wafer with a gallium oxide wafer. The method includes second annealing the bonded silicon carbide wafer and gallium oxide wafer. The method includes thinning the bonded gallium oxide wafer to a thickness of about 2 to about 25 microns.