-
公开(公告)号：US06700144B2
公开(公告)日：2004-03-02
申请号：US10155470
申请日：2002-05-24
IPC分类号： H01L31062
CPC分类号： H01L21/8249 , H01L27/0623
摘要： A semiconductor device includes the following: a semiconductor substrate of a first conduction type; an intrinsic semiconductor layer of the first conduction type formed on the semiconductor substrate; a first semiconductor layer of a second conduction type formed on the intrinsic semiconductor layer; a first impurity layer of the first conduction type formed in the first semiconductor layer of the second conduction type; and a bipolar transistor and a MIS transistor formed in the first semiconductor layer of the second conduction type. The laminated structure of the semiconductor substrate, the intrinsic semiconductor layer, and the first semiconductor layer provides a diode for photoelectric conversion. A first insulator layer and a second insulator layer are formed respectively in at least a portion below the bipolar transistor and the MIS transistor. The transistors are isolated from the semiconductor substrate by the insulator layers, so that the characteristics of the transistors can be adjusted independently of the diode.
摘要翻译： 半导体器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的第一导电类型的本征半导体层; 形成在本征半导体层上的第二导电类型的第一半导体层; 形成在第二导电类型的第一半导体层中的第一导电类型的第一杂质层; 以及形成在第二导电类型的第一半导体层中的双极晶体管和MIS晶体管。 半导体衬底，本征半导体层和第一半导体层的层叠结构提供用于光电转换的二极管。 分别在双极晶体管和MIS晶体管的至少一部分内形成第一绝缘体层和第二绝缘体层。 晶体管通过绝缘体层与半导体衬底隔离，从而可以独立于二极管来调整晶体管的特性。
-
公开(公告)号：US20050063710A1
公开(公告)日：2005-03-24
申请号：US10496687
申请日：2002-11-28
CPC分类号： H04B10/504
摘要： The present invention is intended to prevent a light-emitting diode from emitting light continuously in the case when the level at an input terminal is fixed high because of software or the like and to avoid various problems, such as battery exhaustion and breakdown of the light-emitting diode, in PDAs, cellular phones, etc. For these purposes, a high-pass filter 21 for passing the high-frequency components of an optical transmission input signal having a pulse waveform and a binary circuit 22 for binarizing the output signal of the high-pass filter 21 so as to be returned to a pulse waveform are provided in the preceding stage of a light-emitting device driving circuit 23 for driving a light-emitting diode 8 for optical transmission.
摘要翻译： 本发明是为了防止发光二极管由于软件等而在输入端子的电平固定为高的情况下连续地发光，并且避免诸如电池耗尽和光的破坏等各种问题 用于PDA，蜂窝电话等。为了这些目的，高通滤波器21用于使具有脉冲波形的光传输输入信号的高频分量和二进制电路22二值化，以将 在用于驱动用于光传输的发光二极管8的发光装置驱动电路23的前级中设置高通滤波器21以返回到脉冲波形。
-
公开(公告)号：US07298977B2
公开(公告)日：2007-11-20
申请号：US10496687
申请日：2002-11-28
CPC分类号： H04B10/504
摘要： The present invention is intended to prevent a light-emitting diode from emitting light continuously in the case when the level at an input terminal is fixed high because of software or the like and to avoid various problems, such as battery exhaustion and breakdown of the light-emitting diode, in PDAs, cellular phones, etc. For these purposes, a high-pass filter 21 for passing the high-frequency components of an optical transmission input signal having a pulse waveform and a binary circuit 22 for binarizing the output signal of the high-pass filter 21 so as to be returned to a pulse waveform are provided in the preceding stage of a light-emitting device driving circuit 23 for driving a light-emitting diode 8 for optical transmission.
摘要翻译： 本发明是为了防止发光二极管由于软件等而在输入端子的电平固定为高的情况下连续地发光，并且避免诸如电池耗尽和光的破坏等各种问题 用于PDA，蜂窝电话等。为了这些目的，高通滤波器21用于使具有脉冲波形的光传输输入信号的高频分量和二进制电路22二值化，以将 在用于驱动用于光传输的发光二极管8的发光装置驱动电路23的前级中设置高通滤波器21以返回到脉冲波形。
-
公开(公告)号：US06492665B1
公开(公告)日：2002-12-10
申请号：US09714130
申请日：2000-11-17
申请人： Susumu Akamatsu , Toshitaka Hibi , Takehiko Ueda , Tadami Shimizu , Yoshiaki Kato , Tatsuya Obata , Toyoyuki Shimazaki
发明人： Susumu Akamatsu , Toshitaka Hibi , Takehiko Ueda , Tadami Shimizu , Yoshiaki Kato , Tatsuya Obata , Toyoyuki Shimazaki
IPC分类号： H01L31072
CPC分类号： H01L29/665 , H01L21/76897 , H01L21/823475 , H01L29/1045 , H01L29/6653 , H01L29/66598 , H01L29/7833 , Y10S257/90
摘要： After a gate insulating film, a gate electrode and an on-gate protective layer have been formed in this order on an Si substrate, lightly-doped source/drain regions are formed in the substrate. First and second sidewalls are formed on the sides of the gate electrode and then heavily-doped source/drain regions are formed by implanting dopant ions using these sidewalls as a mask. After the second sidewall has been selectively removed, pocket implanted regions are formed and an overall protective film is deposited. Thereafter, an interlevel dielectric film is deposited, contact holes are formed to reach the heavily-doped source/drain regions and then plug electrodes are formed. Since the second sidewall has already been removed when the overall protective film is deposited, the gap between adjacent gate electrodes is not completely filled in. Accordingly, it is possible to provide a method for fabricating a semiconductor device contributing to device miniaturization without causing a shortcircuit between the gate electrode and a contact member.
摘要翻译： 在栅极绝缘膜之后，在Si衬底上依次形成栅电极和栅极保护层，在衬底中形成轻掺杂源极/漏极区。 第一和第二侧壁形成在栅电极的侧面上，然后通过使用这些侧壁作为掩模注入掺杂剂离子形成重掺杂的源/漏区。 在第二侧壁被选择性地去除之后，形成袋注入区域并且沉积整个保护膜。 此后，沉积层间电介质膜，形成接触孔以到达重掺杂的源/漏区，然后形成插塞电极。 由于当整个保护膜沉积时第二侧壁已经被去除，所以相邻栅电极之间的间隙没有被完全填充。因此，可以提供一种用于制造半导体器件的方法，该半导体器件有助于器件小型化而不引起短路 在栅电极和接触构件之间。
-
公开(公告)号：US06180472B2
公开(公告)日：2001-01-30
申请号：US09361219
申请日：1999-07-27
申请人： Susumu Akamatsu , Toshitaka Hibi , Takehiko Ueda , Tadami Shimizu , Yoshiaki Kato , Tatsuya Obata , Toyoyuki Shimazaki
发明人： Susumu Akamatsu , Toshitaka Hibi , Takehiko Ueda , Tadami Shimizu , Yoshiaki Kato , Tatsuya Obata , Toyoyuki Shimazaki
IPC分类号： H01L21336
CPC分类号： H01L29/665 , H01L21/76897 , H01L21/823475 , H01L29/1045 , H01L29/6653 , H01L29/66598 , H01L29/7833 , Y10S257/90
摘要： After a gate insulating film, a gate electrode and an on-gate protective layer have been formed in this order on an Si substrate, lightly-doped source/drain regions are formed in the substrate. First and second sidewalls are formed on the sides of the gate electrode and then heavily-doped source/drain regions are formed by implanting dopant ions using these sidewalls as a mask. After the second sidewall has been selectively removed, pocket implanted regions are formed and an overall protective film is deposited. Thereafter, an interlevel dielectric film is deposited, contact holes are formed to reach the heavily-doped source/drain regions and then plug electrodes are formed. Since the second sidewall has already been removed when the overall protective film is deposited, the gap between adjacent gate electrodes is not completely filled in. Accordingly, it is possible to provide a method for fabricating a semiconductor device contributing to device miniaturization without causing a shortcircuit between the gate electrode and a contact member.
摘要翻译： 在栅极绝缘膜之后，在Si衬底上依次形成栅电极和栅极保护层，在衬底中形成轻掺杂源极/漏极区。 第一和第二侧壁形成在栅电极的侧面上，然后通过使用这些侧壁作为掩模注入掺杂剂离子形成重掺杂的源/漏区。 在第二侧壁被选择性地去除之后，形成袋注入区域并且沉积整个保护膜。 此后，沉积层间电介质膜，形成接触孔以到达重掺杂的源/漏区，然后形成插塞电极。 由于当整个保护膜沉积时第二侧壁已经被去除，所以相邻栅电极之间的间隙没有被完全填充。因此，可以提供一种用于制造半导体器件的方法，该半导体器件有助于器件小型化而不引起短路 在栅电极和接触构件之间。
-
-
-
-
搜索结果
5 条记录 (耗时 0.011 秒)
