公开(公告)号：US08222674B2

公开(公告)日：2012-07-17

申请号：US13236384

申请日：2011-09-19

申请人： Tadashi Ohachi ,  Takashi Udagawa

发明人： Tadashi Ohachi ,  Takashi Udagawa

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L33/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C30B29/36 ,  C30B29/40 ,  C30B29/403 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02516 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/04 ,  H01L33/12 ,  H01L2924/0002 ,  H01S5/021 ,  H01S5/32341 ,  H01S5/34333 ,  H01L2924/00

摘要： Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGaYInzN1-αMα (0≦X, Y, Z≦1, X+Y+Z=1, 0≦α

摘要翻译： 提供了包含硅单晶衬底101，设置在衬底的表面上的碳化硅层102，与碳化硅层接触设置的III族氮化物半导体结层103和超晶格结构层104的半导体器件 由III族氮化物半导体结层上的III族氮化物半导体构成。 在该半导体装置中，碳化硅层是晶格常数超过0.436nm且不大于0.460nm的立方晶系层，其组成中含有大量硅的非化学计量组成，III族氮化物半导体结 层的组成为Al x Ga y In z N 1-αMα（0＆nlE; X，Y，Z＆nlE; 1，X + Y + Z = 1,0＆lt; nlE;α<1，M是除了氮以外的第V族元素）。

公开(公告)号：US4818735A

公开(公告)日：1989-04-04

申请号：US13433

申请日：1987-02-11

申请人： Yoshinori Fujiki ,  Mamoru Watanabe ,  Takayoshi Sasaki ,  Yoshito Onoda ,  Tadashi Ohachi ,  Takefumi Mitsuhashi

发明人： Yoshinori Fujiki ,  Mamoru Watanabe ,  Takayoshi Sasaki ,  Yoshito Onoda ,  Tadashi Ohachi ,  Takefumi Mitsuhashi

IPC分类号： C04B35/462 ,  C30B9/00 ,  C04B35/46

CPC分类号： C30B9/00 ,  C04B35/462 ,  C30B29/32 ,  C30B29/62

摘要： A tetragonal system tunnel-structured compound having the formula:A.sub.x [Ga.sub.8 M.sub.y Ga.sub.(8+x)-y Ti.sub.16-x O.sub.56 ](I)wherein A is at least one alkali metal selected from the group consisting of K, Rb and Cs, or a solid solution of such alkali metal with lithium, sodium or barium, M is at least one trivalent metal selected from the group consisting of Al, Fe and Cr, x is a number of from 0.1 to 2.0, and y is a number of from 0 to 10.

摘要翻译： 具有下式的四方晶系隧道结构化合物：Ax [Ga8MyGa（8 + x）-yTi16-xO56]（I）其中A是选自K，Rb和Cs中的至少一种碱金属或固体 这种碱金属与锂，钠或钡的溶液，M是选自Al，Fe和Cr中的至少一种三价金属，x是0.1至2.0的数，y是0至 10。

公开(公告)号：US20120007050A1

公开(公告)日：2012-01-12

申请号：US13236384

申请日：2011-09-19

申请人： Tadashi OHACHI ,  Takashi UDAGAWA

发明人： Tadashi OHACHI ,  Takashi UDAGAWA

IPC分类号： H01L29/15

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C30B29/36 ,  C30B29/40 ,  C30B29/403 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02516 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/04 ,  H01L33/12 ,  H01L2924/0002 ,  H01S5/021 ,  H01S5/32341 ,  H01S5/34333 ,  H01L2924/00

摘要： Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGaYInzN1-αMα (0≦X, Y, Z≦1, X+Y+Z=1, 0≦α

摘要翻译： 提供了包含硅单晶衬底101，设置在衬底的表面上的碳化硅层102，与碳化硅层接触设置的III族氮化物半导体结层103和超晶格结构层104的半导体器件 由III族氮化物半导体结层上的III族氮化物半导体构成。 在该半导体装置中，碳化硅层是晶格常数超过0.436nm且不大于0.460nm的立方晶系层，其组成中含有大量硅的非化学计量组成，III族氮化物半导体结 层的组成为Al x Ga y In z N 1-αMα（0＆nlE; X，Y，Z＆nlE; 1，X + Y + Z = 1,0＆lt; nlE;α<1，M是除了氮以外的第V族元素）。

公开(公告)号：US08043977B2

公开(公告)日：2011-10-25

申请号：US12063002

申请日：2006-08-07

申请人： Tadashi Ohachi ,  Takashi Udagawa

发明人： Tadashi Ohachi ,  Takashi Udagawa

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/20

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C30B29/36 ,  C30B29/40 ,  C30B29/403 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02516 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/04 ,  H01L33/12 ,  H01L2924/0002 ,  H01S5/021 ,  H01S5/32341 ,  H01S5/34333 ,  H01L2924/00

摘要： Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGaYInzN1-αMα (0≦X, Y, Z≦1, X+Y+Z=1, 0≦α

摘要翻译： 提供了包含硅单晶衬底101，设置在衬底的表面上的碳化硅层102，与碳化硅层接触设置的III族氮化物半导体结层103和超晶格结构层104的半导体器件 由III族氮化物半导体结层上的III族氮化物半导体构成。 在该半导体装置中，碳化硅层是晶格常数超过0.436nm且不大于0.460nm的立方晶系层，其组成中含有大量硅的非化学计量组成，III族氮化物半导体结 层的组成为Al x Ga y In z N 1-αMα（0＆nlE; X，Y，Z＆nlE; 1，X + Y + Z = 1,0＆lt; nlE;α<1，M是除了氮以外的第V族元素）。

公开(公告)号：US20090127583A1

公开(公告)日：2009-05-21

申请号：US12063002

申请日：2006-08-07

申请人： Tadashi Ohachi ,  Takashi Udagawa

发明人： Tadashi Ohachi ,  Takashi Udagawa

IPC分类号： H01L29/267 ,  H01L21/205

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C30B29/36 ,  C30B29/40 ,  C30B29/403 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02516 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/04 ,  H01L33/12 ,  H01L2924/0002 ,  H01S5/021 ,  H01S5/32341 ,  H01S5/34333 ,  H01L2924/00

摘要： Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGayInzN1-αMα (0≦X, Y, Z≦1, X+Y+Z=1, 0≦α

摘要翻译： 提供了包含硅单晶衬底101，设置在衬底的表面上的碳化硅层102，与碳化硅层接触设置的III族氮化物半导体结层103和超晶格结构层104的半导体器件 由III族氮化物半导体结层上的III族氮化物半导体构成。 在该半导体装置中，碳化硅层是晶格常数超过0.436nm且不大于0.460nm的立方晶系层，其组成中含有大量硅的非化学计量组成，III族氮化物半导体结 层具有AlxGayInzN1-αMalpha（0 <= X，Y，Z <= 1，X + Y + Z = 1,0 <α<1，M除了氮以外的第V族元素）的组成。