摘要:
A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.
摘要:
Disclosed is a crystallization apparatus capable of locally crystallizing amorphous silicon. The crystallization apparatus includes a heat emission part, a support part and a roller. The heat emission part emits heat upon receiving a heat emission source. The support part supports the heat emission part and provides the heat emission source to the heat emission part. The roller receives the heat emission part and has at least one opening to provide heat to a target (e.g., amorphous silicon). Local crystallization is performed without causing damage to a substrate.
摘要:
Provided is a flexible electrophoretic display. The flexible electrophoretic display includes a grayscale representation unit for representing grayscales in unit areas using reflection and transmission; upper and lower electrodes for applying a voltage to the grayscale representation unit; and a plurality of colored particles formed on the upper electrode for representing color. The upper electrode is formed of a transparent conductive material. External incident light is reflected by the colored particles formed on the upper electrode for color implementation by the flexible electrophoretic display. Thus, a compact, flexible electrophoretic display capable of displaying a high-definition image with multi-color and multi-gradation can be implemented by using multi-colored particle layers formed of metallic nano-particles.
摘要:
Disclosed is a crystallization apparatus capable of locally crystallizing amorphous silicon. The crystallization apparatus includes a heat emission part, a support part and a roller. The heat emission part emits heat upon receiving a heat emission source. The support part supports the heat emission part and provides the heat emission source to the heat emission part. The roller receives the heat emission part and has at least one opening to provide heat to a target (e.g., amorphous silicon). Local crystallization is performed without causing damage to a substrate.
摘要:
Provided is a flexible electrophoretic display. The flexible electrophoretic display includes a grayscale representation unit for representing grayscales in unit areas using reflection and transmission; upper and lower electrodes for applying a voltage to the grayscale representation unit; and a plurality of colored particles formed on the upper electrode for representing color. The upper electrode is formed of a transparent conductive material. External incident light is reflected by the colored particles formed on the upper electrode for color implementation by the flexible electrophoretic display. Thus, a compact, flexible electrophoretic display capable of displaying a high-definition image with multi-color and multi-gradation can be implemented by using multi-colored particle layers formed of metallic nano-particles.
摘要:
A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.