公开(公告)号：US08785967B2

公开(公告)日：2014-07-22

申请号：US12575347

申请日：2009-10-07

申请人： Tae-Hyung Hwang ,  Hyun-Jae Kim ,  Doh-Kyung Kim ,  Tae-Hun Jung ,  Woong-Hee Jeong ,  Choong-Hee Lee

发明人： Tae-Hyung Hwang ,  Hyun-Jae Kim ,  Doh-Kyung Kim ,  Tae-Hun Jung ,  Woong-Hee Jeong ,  Choong-Hee Lee

IPC分类号： H01L21/20 ,  C30B1/02 ,  C30B29/06 ,  H01L21/02 ,  H01L27/12

CPC分类号： C30B29/06 ,  B32B2457/202 ,  C30B1/023 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1285

摘要： Disclosed is a crystallization apparatus capable of locally crystallizing amorphous silicon. The crystallization apparatus includes a heat emission part, a support part and a roller. The heat emission part emits heat upon receiving a heat emission source. The support part supports the heat emission part and provides the heat emission source to the heat emission part. The roller receives the heat emission part and has at least one opening to provide heat to a target (e.g., amorphous silicon). Local crystallization is performed without causing damage to a substrate.

摘要翻译： 公开了能够局部结晶非晶硅的结晶装置。 结晶装置包括发热部，支撑部和辊。 发热部分在接收到发热源时发热。 支撑部分支撑散热部分并将散热源提供给散热部分。 辊接收热发射部分并且具有至少一个开口以向目标（例如非晶硅）提供热量。 进行局部结晶而不会损坏基板。

公开(公告)号：US20100087051A1

公开(公告)日：2010-04-08

申请号：US12575347

申请日：2009-10-07

申请人： Tae-Hyung Hwang ,  Hyun-Jae Kim ,  Doh-Kyung Kim ,  Tae-Hun Jung ,  Woong-Hee Jeong ,  Choong-Hee Lee

发明人： Tae-Hyung Hwang ,  Hyun-Jae Kim ,  Doh-Kyung Kim ,  Tae-Hun Jung ,  Woong-Hee Jeong ,  Choong-Hee Lee

IPC分类号： H01L21/20 ,  B32B37/12 ,  B01D9/00

CPC分类号： C30B29/06 ,  B32B2457/202 ,  C30B1/023 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1285

摘要： Disclosed is a crystallization apparatus capable of locally crystallizing amorphous silicon. The crystallization apparatus includes a heat emission part, a support part and a roller. The heat emission part emits heat upon receiving a heat emission source. The support part supports the heat emission part and provides the heat emission source to the heat emission part. The roller receives the heat emission part and has at least one opening to provide heat to a target (e.g., amorphous silicon). Local crystallization is performed without causing damage to a substrate.

摘要翻译： 公开了能够局部结晶非晶硅的结晶装置。 结晶装置包括发热部，支撑部和辊。 发热部分在接收到发热源时发热。 支撑部分支撑散热部分并将散热源提供给散热部分。 辊接收热发射部分并且具有至少一个开口以向目标（例如非晶硅）提供热量。 进行局部结晶而不会损坏基板。

公开(公告)号：US07993994B2

公开(公告)日：2011-08-09

申请号：US12412682

申请日：2009-03-27

申请人： Tae-Hyung Hwang ,  Hyun-Jae Kim ,  Do-Kyung Kim ,  Woong-Hee Jeong ,  Choong-Hee Lee ,  Tae-Hun Jung

发明人： Tae-Hyung Hwang ,  Hyun-Jae Kim ,  Do-Kyung Kim ,  Woong-Hee Jeong ,  Choong-Hee Lee ,  Tae-Hun Jung

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/1281 ,  H01L27/1285

摘要： A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.

摘要翻译： 一种使非晶硅结晶的方法包括在衬底上形成非晶硅层; 在所述非晶硅层上形成绝缘层; 在绝缘层上形成热分布金属层; 以及在所述散热金属层上形成一个硅酸盐层。 然后施加点火热以点燃铝酸盐层，并从点燃的铝酸盐层产生足够的局部放热，以使非晶硅层结晶。 非晶硅层下面的衬底可以是通过通过散热金属层和绝缘层施加到非晶硅层的顶部的局部结晶热而基本上不变形的热敏衬底。

公开(公告)号：US08319300B2

公开(公告)日：2012-11-27

申请号：US12662292

申请日：2010-04-09

申请人： Jong-Baek Seon ,  Hyun-Jae Kim ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Hyun-Soo Shin ,  Kyung-Bae Park ,  Woong-Hee Jeong ,  Gun-hee Kim ,  Byung-Du Ahn

发明人： Jong-Baek Seon ,  Hyun-Jae Kim ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Hyun-Soo Shin ,  Kyung-Bae Park ,  Woong-Hee Jeong ,  Gun-hee Kim ,  Byung-Du Ahn

IPC分类号： H01L27/14

CPC分类号： H01L29/7869

摘要： A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

摘要翻译： 用于形成氧化物薄膜的溶液组合物可以包括包含锌的第一化合物，包括铟的第二化合物和包含镁或铪的第三化合物，并且电子器件可以包括包含锌，铟和镁的氧化物半导体。 锌和铪可以以约1:0.01至约1:1的原子比包括在内。

公开(公告)号：US20100258793A1

公开(公告)日：2010-10-14

申请号：US12662292

申请日：2010-04-09

申请人： Jong-Baek Seon ,  Hyun-Jae Kim ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Hyun-Soo Shin ,  Kyung-Bae Park ,  Woong-Hee Jeong ,  Gun-Hee Kim ,  Byung-Du Ahn

发明人： Jong-Baek Seon ,  Hyun-Jae Kim ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Hyun-Soo Shin ,  Kyung-Bae Park ,  Woong-Hee Jeong ,  Gun-Hee Kim ,  Byung-Du Ahn

IPC分类号： H01L29/786 ,  H01B1/02 ,  H01B1/12 ,  H01B1/22

CPC分类号： H01L29/7869

摘要： A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

摘要翻译： 用于形成氧化物薄膜的溶液组合物可以包括包含锌的第一化合物，包括铟的第二化合物和包含镁或铪的第三化合物，并且电子器件可以包括包含锌，铟和镁的氧化物半导体。 锌和铪可以以约1:0.01至约1:1的原子比包括在内。

公开(公告)号：US09005697B2

公开(公告)日：2015-04-14

申请号：US11866617

申请日：2007-10-03

申请人： Hyun-Jae Kim ,  Sook-Young Kang ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang

发明人： Hyun-Jae Kim ,  Sook-Young Kang ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang

IPC分类号： B05D7/00 ,  H01L27/12 ,  C30B13/24 ,  C30B29/06 ,  H01L21/20

CPC分类号： H01L21/02678 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1229 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T428/24273

摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

摘要翻译： 提供一种制造薄膜晶体管阵列面板的方法，其包括：在绝缘衬底上沉积非晶硅层; 通过使用掩模的多个激光照射将非晶硅层转化为多晶硅层; 在所述多晶硅层上形成栅极绝缘层; 在所述栅极绝缘层上形成多个栅极线; 在栅极线上形成第一层间绝缘层; 在所述第一层间绝缘层上形成多条数据线; 在数据线上形成第二层间绝缘层; 以及在所述第二层间绝缘层上形成多个像素电极，其中所述掩模包括以混合方式布置的多个透射区域和多个阻挡区域。

公开(公告)号：US08853590B2

公开(公告)日：2014-10-07

申请号：US11983103

申请日：2007-11-06

申请人： Hyun-Jae Kim ,  Myung-Koo Kang

发明人： Hyun-Jae Kim ,  Myung-Koo Kang

IPC分类号： B23K26/00 ,  G03B27/52 ,  H01L21/20 ,  B23K26/02 ,  H01L29/786 ,  B23K26/06 ,  H01L29/66 ,  H01L27/12 ,  H01L21/02

CPC分类号： H01L27/1285 ,  B23K26/02 ,  B23K26/066 ,  H01L21/02532 ,  H01L21/0268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector; and an absorber for absorbing the laser beam reflected by the reflector.

摘要翻译： 用于将激光束照射到形成在基板上的非晶硅薄膜上的装置。 该装置包括：安装基板的台架; 用于产生激光束的激光振荡器; 用于将激光束聚焦并引导到薄膜上的投影透镜; 用于反射引导到薄膜上的激光束的反射器; 用于控制所述反射器的位置的控制器; 以及用于吸收由反射器反射的激光束的吸收体。

公开(公告)号：US08510362B2

公开(公告)日：2013-08-13

申请号：US12517781

申请日：2007-06-18

申请人： Young-Jin Moon ,  Hyun-Jae Kim ,  Ki-Seok Kim ,  Young-II Kim

发明人： Young-Jin Moon ,  Hyun-Jae Kim ,  Ki-Seok Kim ,  Young-II Kim

IPC分类号： G06F17/14

CPC分类号： G06F17/142

摘要： The present invention relates to an apparatus and method for variable fast Fourier transform. According to an embodiment of the present invention, two n-point fast Fourier transform (FFT) processors are used to generate two n-point FFT output data or one 2n-point FFT output data. The one 2n-point input data is alternately input to the two n-point FFT processors. Each of the two n-point FFT processors selects a twiddle factor for the n-point input data or the 2n-point input data and performs fast Fourier transform. A butterfly operation is performed on signals obtained by performing fast Fourier transform on the 2n-point input data signal, and the processed signals are aligned in an output order. According to this structure, it is possible to realize a fast Fourier transform hardware engine that selectively performs multi-frequency allocation in a base station system that supports the multi-frequency allocation.

摘要翻译： 本发明涉及一种用于可变快速傅里叶变换的装置和方法。 根据本发明的实施例，使用两个n点快速傅里叶变换（FFT）处理器来产生两个n点FFT输出数据或一个2n点FFT输出数据。 一个2n点输入数据交替地输入到两个n点FFT处理器。 两个n点FFT处理器中的每一个为n点输入数据或2n点输入数据选择旋转因子，并执行快速傅里叶变换。 对通过对2n点输入数据信号执行快速傅里叶变换获得的信号执行蝶形运算，并且处理的信号以输出顺序对准。 根据该结构，能够实现在支持多频分配的基站系统中选择性地进行多频分配的快速傅里叶变换硬件引擎。

公开(公告)号：US20100279700A1

公开(公告)日：2010-11-04

申请号：US12770124

申请日：2010-04-29

申请人： Hyun-Jae Kim ,  Sung Cheol Chang ,  Won-Ik Kim ,  Sung Kyung Kim ,  Chul Sik Yoon ,  Jee Hwan Ahn

发明人： Hyun-Jae Kim ,  Sung Cheol Chang ,  Won-Ik Kim ,  Sung Kyung Kim ,  Chul Sik Yoon ,  Jee Hwan Ahn

IPC分类号： H04W72/04 ,  H04W24/00 ,  H04W52/00

CPC分类号： H04W16/10 ,  H04W16/08 ,  H04W16/30 ,  H04W52/243 ,  H04W52/245

摘要： A method for controlling transmission power in a mobile communication system is provided. According to the method, a serving base station arranges a plurality of terminals in ascending order according to Carrier-to-Interference-and-Noise-Ratios (CINRs) based on the CINR measured by the plurality of terminals, classifies the plurality of terminals in one of a first group and a second group according to the order, allocates a subchannel of a data region corresponding to the first group from among a plurality of data regions included in the uplink frame to a terminal classified as the first group, and allocates a subchannel of a data region corresponding to the second group from among the data regions to a terminal classified as the second group.

摘要翻译： 提供一种用于控制移动通信系统中的发送功率的方法。 根据该方法，服务基站基于由多个终端测量的CINR，根据载波干扰比（CINR）按升序排列多个终端，对多个终端进行分类 根据该顺序的第一组和第二组中的一个，将从上行链路帧中包括的多个数据区域中的与第一组对应的数据区域的子信道分配给分类为第一组的终端，并且分配 将与第二组对应的数据区域的子信道从数据区域分配给分类为第二组的终端。

公开(公告)号：US07791076B2

公开(公告)日：2010-09-07

申请号：US12469256

申请日：2009-05-20

申请人： Myung-Koo Kang ,  Hyun-Jae Kim ,  Sook-Young Kang ,  Woo-Suk Chung

发明人： Myung-Koo Kang ,  Hyun-Jae Kim ,  Sook-Young Kang ,  Woo-Suk Chung

IPC分类号： H01L21/00

CPC分类号： H01L29/42384 ,  G02F1/13454 ,  G02F2202/104 ,  H01L21/02675 ,  H01L21/2026 ,  H01L29/78675

摘要： A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed. In a liquid crystal display, a plurality of thin film transistors forming a data driver circuit include thin films of polycrystalline silicon formed by sequential lateral solidification, at least one portion of a gate electrode of each thin film transistor extends in a direction crossing the grain growing direction, and at least one of the plurality of thin film transistors has a gate electrode having a pattern different from other thin film transistors.

摘要翻译： 一种薄膜晶体管和液晶显示器，其中栅极形成为包括沿垂直于增益生长方向的方向延伸的至少一个部分，以使TFT的电荷迁移率均匀，而不增加驱动尺寸 电路。 根据本发明的薄膜晶体管包括在绝缘基板上具有含有生长晶粒的多晶硅薄膜的半导体图案。 半导体图案包括沟道区和相对于沟道区相反的源极和漏极区。 栅极绝缘层覆盖半导体图案。 在栅极绝缘层上形成栅电极，该栅电极具有沿与晶粒的生长方向交叉的方向延伸的至少一部分，与沟道区重叠。 在液晶显示器中，形成数据驱动电路的多个薄膜晶体管包括通过顺序横向固化形成的多晶硅薄膜，每个薄膜晶体管的栅电极的至少一部分沿与晶粒生长相交的方向延伸 并且多个薄膜晶体管中的至少一个薄膜晶体管具有栅极，其具有与其它薄膜晶体管不同的图案。