摘要:
A pattern inspection method including: sequentially imaging plural chip formed on a substrate; selecting at least one of pattern sections of each inspection image obtained by the imaging, while discarding other pattern sections, based on a recipe created in advance, the recipe including information for determining which pattern sections to be selected or discarded; calculating position gap between an inspection image of a chip obtained by the imaging and a reference image stored in a memory by using positional information of pattern images included in the inspection image and reference pattern images which are both corresponding to the at least one of pattern sections selected at the selecting; aligning the inspection image and the reference image by using information of the calculated position gap; and comparing the aligned inspection image with the reference image, and extracting a difference between the two images as a defect candidate.
摘要:
The present invention relates to a tool for analyzing by priority a defect having a high possibility of causing an electrical failure when inspecting a particle and a pattern defect in a piece of work which constitutes an electronic device such as a semiconductor integrated circuit, and relates to a system therefor. On the basis of the result of comparison between defect information which is the result of inspection by an inspection tool and layout data stored in an auxiliary storage device, or on the basis of the result of reinspection by comparison between a defect and a wiring pattern as a background by an inspection processing operation unit, an object to be reviewed is selected using review conditions stored in the auxiliary storage device.
摘要:
A pattern inspection apparatus includes a light source which emits ultraviolet light, an irradiator which reduces coherency of the ultraviolet light and irradiates the coherency reduced ultraviolet light onto a specimen on which a pattern is formed through an objective lens, and a focus control means which projects light on the specimen from outside the objective lens, detects light reflected from the specimen by the projection and adjusts a height of the specimen relative to the objective lens. The apparatus further includes an image which forms an image of the specimen irradiated with the ultraviolet light and detects the formed image with a sensor, an image processor which processes a signal outputted from the sensor to detect a defect of the specimen, and a display which displays information of the defect detected by the image processor.
摘要:
In a pattern inspection apparatus for comparing images of corresponding areas of two patterns, which are formed so as to be identical, so as to judge that a non-coincident part of the images is a defect, the influence of unevenness in brightness of patterns caused by a difference of thickness or the like is reduced, whereby highly sensitive pattern inspection is realized. In addition, high-speed pattern inspection can be carried out without changing the image comparison algorithm. For this purpose, the pattern inspection apparatus operates to perform comparison processing of images in parallel in plural areas. Further, the pattern inspection apparatus operates to convert gradation of an image signal among compared images using different plural processing units such that, even in the case in which a difference of brightness occurs in an identical pattern among images, a defect can be detected correctly.
摘要:
The present invention relates to a pattern defect inspection method and apparatus that reveal ultramicroscopic defects on an inspection target in which ultramicroscopic circuit patterns are formed, and inspect the defects with high sensitivity and at a high speed. The present invention provides a pattern inspection apparatus for comparing the images of corresponding areas of two formed patterns that should be identical with each other, and judging any mismatched image area as a defect. The pattern inspection apparatus includes means for performing an image comparison process on a plurality of areas in a parallel manner. Further, the pattern inspection apparatus also includes means for converting the gradation of the image signals of compared images in each of a plurality of different processes. Therefore, the present invention can properly detect defects even if the same patterns of compared images differ in brightness.
摘要:
The present invention relates to a high-sensitivity defect inspection method, apparatus, and system adapted for the fine-structuring of patterns; wherein, in addition to a cleaning tank which chemically cleans a sample and rinses the sample, a defect inspection apparatus having a liquid-immersion element by which the interspace between the sample and the objective lens of an optical system is filled with a liquid, and a drying tank which dries the sample, the invention uses liquid-immersion transfer means from said cleaning tank through said liquid-immersion means of said defect inspection apparatus to said drying tank so that the sample is transferred in a liquid-immersed state from said cleaning tank to said liquid-immersion means.
摘要:
The present invention provides a high-precision alignment method, device and code for inspections that compare an inspection image with a reference image and detect defects from their differences. In one embodiment an inspection image and a reference image are divided into multiple regions. An offset is calculated for each pair of sub-images. Out of these multiple offsets, only the offsets with high reliability are used to determine an offset for the entire image. This allows high-precision alignment with little or no dependency on pattern density or shape, differences in luminance between images, and uneven luminance within individual images. Also, detection sensitivity is adjusted as necessary by monitoring alignment precision.
摘要:
The present invention relates to a high-sensitivity defect inspection method, apparatus, and system adapted for the fine-structuring of patterns; wherein, in addition to a cleaning tank which chemically cleans a sample and rinses the sample, a defect inspection apparatus having a liquid-immersion element by which the interspace between the sample and the objective lens of an optical system is filled with a liquid, and a drying tank which dries the sample, the invention uses liquid-immersion transfer means from said cleaning tank through said liquid-immersion means of said defect inspection apparatus to said drying tank so that the sample is transferred in a liquid-immersed state from said cleaning tank to said liquid-immersion means.
摘要:
In a defect inspecting apparatus, having contrast, brightness and appearance of a target for inspection and detection sensitivity of a defect changed depending on optical system conditions, and adapted to perform inspection by selecting an optimal test condition, even an unskilled user can easily select an optimal optical condition by quantitatively displaying evaluation values side by side when optical system conditions are changed. Moreover, by selecting an evaluation item having highest satisfaction based on a result of a series of test inspection, an optimal test condition can be automatically selected.
摘要:
The inventive method and apparatus for detecting defects of a microscopic circuit pattern by imaging the pattern at high resolution comprises an objective lens for imaging the subject pattern, a laser illumination means for illuminating the pupil of the objective lens, means of diminishing the coherency of the laser illumination, an accumulative detector, and means of processing the signal detected by the detector. The method and apparatus are capable of imaging the subject pattern at high sensitivity and high speed based on the illumination by a short wavelength, which is indispensable for the enhancement of resolution, particularly based on a laser light source which is advantageous for practicing, with a resulting image being the same or better in quality as compared with an image resulting from the ordinary discharge tube illumination, whereby it is possible to detect microscopic defects at high sensitivity.