公开(公告)号：US06159413A

公开(公告)日：2000-12-12

申请号：US098289

申请日：1998-06-16

申请人： Takanori Katoh ,  Yanping Zhang

发明人： Takanori Katoh ,  Yanping Zhang

IPC分类号： G21K5/02 ,  B29C39/02 ,  B29C39/26 ,  B32B3/02 ,  B32B27/06 ,  B81C1/00 ,  C23F4/00 ,  G03F7/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20 ,  G03F7/40 ,  H01L21/027 ,  H01L21/302 ,  B29C59/16

CPC分类号： B81C1/00126 ,  B32B27/06 ,  B32B3/02 ,  G03F7/00 ,  G03F7/075 ,  G03F7/09 ,  B81C2201/0159 ,  G03F7/2039 ,  Y10S430/167 ,  Y10S430/168

摘要： A laminated substrate is prepared, the laminated substrate having two layers including a first film and a second film in tight contact with the first film, the second film being made of a material capable of being etched with synchrotron radiation light. A mask member with a pattern is disposed in tight contact with the surface of the second film of the laminated structure or at a distance from the surface of the second film, the pattern of the mask member being made of a material not transmitting the synchrotron radiation light. The synchrotron radiation light is applied on a partial surface area of the second film via the mask member to etch the second film where the synchrotron radiation light is applied and to expose a partial surface area of the first film on the bottom of an etched area.

公开(公告)号：US06379773B1

公开(公告)日：2002-04-30

申请号：US09602274

申请日：2000-06-23

申请人： Takanori Katoh ,  Yanping Zhang

发明人： Takanori Katoh ,  Yanping Zhang

IPC分类号： B32B324

CPC分类号： B81C1/00126 ,  B32B3/02 ,  B32B27/06 ,  G03F7/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/2039 ,  Y10T428/24331 ,  Y10T428/24339

摘要： A laminated substrate is prepared, the laminated substrate having two layers including a first film and a second film in tight contact with the first film, the second film being made of a material capable of being etched with synchrotron radiation light. A mask member with a pattern is disposed in tight contact with the surface of the second film of the laminated structure or at a distance from the surface of the second film, the pattern of the mask member being made of a material not transmitting the synchrotron radiation light. The synchrotron radiation light is applied on a partial surface area of the second film via the mask member to etch the second film where the synchrotron radiation light is applied and to expose a partial surface area of the first film on the bottom of an etched area.

摘要翻译： 制备层压基板，层压基板具有包括第一膜和与第一膜紧密接触的第二膜的两层，第二膜由能够用同步加速器辐射光蚀刻的材料制成。 具有图案的掩模构件设置成与层压结构的第二膜的表面紧密接触或者距离第二膜的表面一定距离，掩模构件的图案由不透射同步辐射的材料制成 光。 经由掩模构件将同步加速器辐射光施加在第二膜的部分表面区域上，以蚀刻施加了同步加速器辐射光的第二膜并暴露蚀刻区域的底部上的第一膜的局部表面区域。

公开(公告)号：US5730924A

公开(公告)日：1998-03-24

申请号：US578960

申请日：1995-12-27

申请人： Takanori Katoh ,  Yanping Zhang ,  Shiro Hamada

发明人： Takanori Katoh ,  Yanping Zhang ,  Shiro Hamada

IPC分类号： B29C35/08 ,  B29C59/16 ,  G03F7/039 ,  G03F7/20 ,  C08J7/00 ,  B29C71/04

CPC分类号： B29C59/16 ,  G03F7/039 ,  G03F7/2002 ,  B29C2035/0827 ,  B29K2027/18

摘要： A method of micromachining polytetrafluoroethylene by applying radiation light to the surface of polytetrafluoroethylene, includes the steps of: preparing a workpiece including a region made of polytetrafluoroethylene; preparing a mask having patterned areas substantially transmitting and not transmitting the radiation light; and applying the radiation light containing at least ultraviolet rays of a wavelength of 160 nm to a surface of the workpiece through the mask. Polytetrafluoroethylene can be microscopically processed, while obtaining a high aspect ratio and processing a large area with ease.

摘要翻译： 通过对聚四氟乙烯的表面施加辐射光来微加工聚四氟乙烯的方法包括以下步骤：制备包括由聚四氟乙烯制成的区域的工件; 制备具有基本上透射并且不透射辐射光的图案区域的掩模; 以及通过所述掩模将至少包含波长为160nm的紫外线的辐射光施加到所述工件的表面。 可以对聚四氟乙烯进行显微加工，同时获得高的纵横比并容易地加工大面积。

公开(公告)号：US06454987B1

公开(公告)日：2002-09-24

申请号：US09602273

申请日：2000-06-23

申请人： Takanori Katoh ,  Yanping Zhang

发明人： Takanori Katoh ,  Yanping Zhang

IPC分类号： B29C5916

CPC分类号： B81C1/00126 ,  B32B3/02 ,  B32B27/06 ,  B81C2201/0159 ,  G03F7/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/2039 ,  Y10S430/167 ,  Y10S430/168

摘要： A laminated substrate is prepared, the laminated substrate having two layers including a first film and a second film in tight contact with the first film, the second film being made of a material capable of being etched with synchrotron radiation light. A mask member with a pattern is disposed in tight contact with the surface of the second film of the laminated structure or at a distance from the surface of the second film, the pattern of the mask member being made of a material not transmitting the synchrotron radiation light. The synchrotron radiation light is applied on a partial surface area of the second film via the mask member to etch the second film where the synchrotron radiation light is applied and to expose a partial surface area of the first film on the bottom of an etched area.