公开(公告)号：US20120238082A1

公开(公告)日：2012-09-20

申请号：US13477239

申请日：2012-05-22

Applicant: Yongxun LIU ,  Takashi Matsukawa ,  Kazuhiko Endo ,  Shinichi Ouchi ,  Kunihiro Sakamoto ,  Meishoku Masahara

Inventor： Yongxun LIU ,  Takashi Matsukawa ,  Kazuhiko Endo ,  Shinichi Ouchi ,  Kunihiro Sakamoto ,  Meishoku Masahara

IPC: H01L21/20 ,  B82Y40/00

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/125 ,  H01L29/42392 ,  H01L29/775

Abstract: A manufacturing method of the nano-wire field effect transistor, comprising steps of preparing an SOI substrate having a (100) surface orientation; processing a silicon crystal layer comprising the SOI substrate into a standing plate-shaped member having a rectangular cross-section; processing the silicon crystal layer by orientation dependent wet etching and thermal oxidation into a shape where two triangular columnar members are arranged one above the other with a spacing from each other so as to face along the ridge lines of the triangular columnar members; and processing the two triangular columnar members into a circular columnar member configuring a nano-wire by hydrogen annealing or thermal oxidation.

Abstract translation: 一种纳米线场效应晶体管的制造方法，包括制备具有（100）表面取向的SOI衬底的步骤; 将包括SOI衬底的硅晶体层加工成具有矩形横截面的立式板状构件; 通过取向依赖的湿式蚀刻和热氧化将硅晶体层加工成两个三角柱状部件彼此之间彼此间隔开的形状，以便沿三角形柱状部件的棱线面对; 并通过氢退火或热氧化将两个三角形柱状构件加工成构成纳米线的圆形柱状构件。

公开(公告)号：US20110057163A1

公开(公告)日：2011-03-10

申请号：US12991226

申请日：2009-06-05

Applicant: Yongxun Liu ,  Takashi Matsukawa ,  Kazuhiko Endo ,  Shinichi Ouchi ,  Kunihiro Sakamoto ,  Meishoku Masahara

Inventor： Yongxun Liu ,  Takashi Matsukawa ,  Kazuhiko Endo ,  Shinichi Ouchi ,  Kunihiro Sakamoto ,  Meishoku Masahara

IPC: H01L29/66 ,  H01L21/762 ,  H01L29/775 ,  B82Y99/00

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/125 ,  H01L29/42392 ,  H01L29/775

Abstract: Provided is a method for fabricating a nano-wire field effect transistor including steps of: preparing a nano-wire field effect transistor including two columnar members made of a silicon crystal configuring a nano-wire on a substrate are arranged on a substrate in parallel and one above the other, and an SOI substrate having a (100) surface orientation; processing a silicon crystal layer configuring the SOI substrate into a standing plate-shaped member having a rectangular cross-section; processing the silicon crystal by orientation dependent wet etching and thermal oxidation into a shape where two triangular columnar members are arranged one above the other with a spacing from each other as to face along the ridge lines of the triangular columnar members; and processing the triangular columnar member into a circular columnar member configuring a nano-wire by hydrogen-annealing or a thermal oxidation; and an integrated circuit including the transistor.

Abstract translation: 提供一种制造纳米线场效应晶体管的方法，包括以下步骤：制备纳米线场效应晶体管，其纳米线场效应晶体管包括两个由在基板上构成纳米线的硅晶体制成的柱状部件并联在基板上， 并且具有（100）表面取向的SOI衬底; 将构成SOI衬底的硅晶层加工成具有矩形横截面的立板形构件; 通过取向依赖的湿蚀刻和热氧化将硅晶体加工成两个三角柱状部件彼此之间彼此间隔开地沿着三角形柱状部件的棱线彼此间隔地布置的形状; 并通过氢退火或热氧化将三角柱状构件加工成构成纳米线的圆柱形构件; 以及包括晶体管的集成电路。

公开(公告)号：US20100315861A1

公开(公告)日：2010-12-16

申请号：US12521408

申请日：2007-12-20

Applicant: Shinichi Ouchi ,  Yongxun Liu ,  Meishoku Masahara ,  Takashi Matsukawa ,  Kazuhiko Endo

Inventor： Shinichi Ouchi ,  Yongxun Liu ,  Meishoku Masahara ,  Takashi Matsukawa ,  Kazuhiko Endo

IPC: G11C11/00

CPC classification number: H01L27/1104 ,  H01L21/845 ,  H01L27/11 ,  H01L27/1211 ,  H01L29/785 ,  H01L29/7856

Abstract: In an SRAM cell including a first to a fourth semiconductor thin plates which stand on a substrate and are arranged in parallel to each other, on each of the four semiconductor thin plates being formed a first four-terminal double-gate FET with a first conductivity type; a second and a third four-terminal double-gate FETs which are connected in series with each other and have a second conductivity type; a fourth and a fifth four-terminal double-gate FETs which are connected in series with each other and have the second conductivity type; a sixth four-terminal double-gate FET with the first conductivity type, wherein the third and the fourth four-terminal double-gate FETs form select transistors, and the first, the second, the fifth and the sixth four-terminal double-gate FETs form a CMOS inverter, logic signal input gates of the first and the sixth four-terminal double-gate FETs are arranged on the side facing the second and the third semiconductor thin plates, respectively, while threshold voltage control gates of the second to the fifth four-terminal double-gate FETs are arranged on the sides facing each other and are commonly connected to a first bias line. Threshold voltage control gates of the first and the sixth four-terminal double-gate FETs are commonly connected to a second bias line. A word line, the first bias line and the second bias line are arranged orthogonally to the direction of arrangement of the first to the fourth semiconductor thin plates.

Abstract translation: 在包括站立在基板上并彼此平行布置的第一至第四半导体薄板的SRAM单元中，在四个半导体薄板中的每一个上形成具有第一导电性的第一四端子双栅极FET 类型; 第二和第三四端子双栅极FET，它们彼此串联并具有第二导电类型; 第四和第五四端子双栅极FET，它们彼此串联并具有第二导电类型; 具有第一导电类型的第六个四端子双栅极FET，其中第三和第四四端子双栅极FET形成选择晶体管，并且第一，第二，第五和第六四端子双栅极 FET形成CMOS反相器，第一和第六四端子双栅极FET的逻辑信号输入栅极分别布置在面向第二和第三半导体薄板的一侧，而第二至第四半导体FET的阈值电压控制栅极 第五四端子双栅FET被布置在彼此面对的侧面上，并且共同连接到第一偏置线。 第一和第六四端子双栅极FET的阈值电压控制栅极共同连接到第二偏置线。 字线，第一偏置线和第二偏置线与第一至第四半导体薄板的排列方向垂直。

公开(公告)号：US20100214760A1

公开(公告)日：2010-08-26

申请号：US12775921

申请日：2010-05-07

Applicant: Takashi Matsukawa ,  Yuuki Tanaka ,  Tomoyuki Shinohara ,  Shigeru Ashida ,  Yasushi Nakagawa ,  Shou Ueda

Inventor： Takashi Matsukawa ,  Yuuki Tanaka ,  Tomoyuki Shinohara ,  Shigeru Ashida ,  Yasushi Nakagawa ,  Shou Ueda

IPC: H02B1/20

CPC classification number: H02G11/00 ,  H01B7/0892 ,  H01B11/203 ,  H04M1/0237

Abstract: A harness-integrated slide hinge is provided that connects between a plurality of casings having circuits therein while allowing the casings to move relatively. The harness-integrated slide hinge includes: a first sliding plate fitted to the one casing; a second sliding plate fitted to the other casing; a sliding mechanism that connects between the first sliding plate and the second sliding plate while allowing them to move relatively; and a harness that has a plurality of wirings, and connection sections provided on both ends of these wirings, and that is routed between the first sliding plate and the second sliding plate, wherein a wiring lamination section having a plurality of the wirings laminated therein is bent in a U-shape and accommodated in a space section between the first sliding plate and the second sliding plate.

Abstract translation: 提供一种线束集成滑动铰链，其连接在具有电路的多个壳体之间，同时允许壳体相对移动。 线束集成滑动铰链包括：安装在一个壳体上的第一滑动板; 安装在另一个壳体上的第二滑板; 滑动机构，其在第一滑动板和第二滑动板之间连接，同时允许它们相对移动; 以及具有多个布线的线束和设置在这些布线的两端的连接部分，并且在第一滑动板和第二滑动板之间布线，其中具有多个布线层叠的布线层叠部分是 弯曲成U形并且容纳在第一滑动板和第二滑动板之间的空间部分中。

公开(公告)号：US20100213546A1

公开(公告)日：2010-08-26

申请号：US12602314

申请日：2008-05-09

Applicant: Yongxun Liu ,  Takashi Matsukawa ,  Meishoku Masahara ,  Kazuhiko Endo ,  Shinichi Ouchi

Inventor： Yongxun Liu ,  Takashi Matsukawa ,  Meishoku Masahara ,  Kazuhiko Endo ,  Shinichi Ouchi

IPC: H01L27/12

CPC classification number: H01L29/78609 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/78696

Abstract: A field-effect transistor comprising a movable gate electrode that suppresses a leakage current from the gate electrode, and has a large current drivability and a low leakage current between a source and a drain. The field-effect transistor comprises: an insulating substrate; a semiconductor layer of triangle cross-sectional shape formed on the insulating substrate, having a gate insulation film on a surface, and forming a channel in a lateral direction; fixed electrodes that are arranged adjacent to both sides of the semiconductor layer and in parallel to the semiconductor layer, each of the electrodes having an insulation film on a surface; a source/drain formed at the end part of the semiconductor layer; and the movable gate electrode formed above the semiconductor layer and the fixed electrodes with a gap.

Abstract translation: 一种场效应晶体管，包括抑制来自栅电极的漏电流的可移动栅电极，并且在源极和漏极之间具有大的电流驱动能力和低的漏电流。 场效应晶体管包括：绝缘基板; 形成在所述绝缘基板上的三角形截面形状的半导体层，在表面上具有栅极绝缘膜，并且沿横向形成沟道; 固定电极，其布置成与半导体层的两侧相邻并且平行于半导体层，每个电极在表面上具有绝缘膜; 源极/漏极，形成在半导体层的端部; 以及形成在半导体层上方的可动栅电极和具有间隙的固定电极。

公开(公告)号：US20100210120A1

公开(公告)日：2010-08-19

申请号：US12676497

申请日：2008-09-04

Applicant: Masatoshi Maruishi ,  Takashi Matsukawa

Inventor： Masatoshi Maruishi ,  Takashi Matsukawa

IPC: H01R12/24

CPC classification number: H01R12/79 ,  H01R12/61 ,  H01R12/716

Abstract: A connector is provided which includes a plug having a plurality of cables disposed on one side of the plug, and a socket mounted on a base substrate that is used to connect the plug. The plug includes a plate-like member and a flexible substrate fixed to the surroundings of the plate-like member. The plate-like member includes a planar portion approximately parallel to a substrate face of the base substrate, and a bent portion provided on the other side of the plug and extending in a direction approximately perpendicular to the base substrate. The socket includes a mating space which receives the bent portion from a direction approximately perpendicular to the base substrate when the plug and socket are connector-connected.

Abstract translation: 提供一种连接器，其包括具有设置在插头的一侧上的多个电缆的插头和安装在用于连接插头的基底基板上的插座。 插头包括板状构件和固定到板状构件的周围的柔性基板。 板状构件包括大致平行于基底基板的基板面的平面部分和设置在插头的另一侧上且沿大致垂直于基底基板的方向延伸的弯曲部分。 插座包括配合空间，当插头和插座连接器连接时，该配合空间从大致垂直于基底基板的方向接收弯曲部分。

公开(公告)号：US5331161A

公开(公告)日：1994-07-19

申请号：US938611

申请日：1992-09-01

Applicant: Iwao Ohdomari ,  Masaaki Sugimori ,  Junichi Murayama ,  Meishoku Koh ,  Katsunori Noritake ,  Takashi Matsukawa ,  Hiroaki Shimizu

Inventor： Iwao Ohdomari ,  Masaaki Sugimori ,  Junichi Murayama ,  Meishoku Koh ,  Katsunori Noritake ,  Takashi Matsukawa ,  Hiroaki Shimizu

IPC: G21H5/00 ,  G01Q90/00 ,  G21K1/04 ,  G21K1/087 ,  G21K5/04 ,  H01J27/02 ,  H01J37/09 ,  H01J37/147 ,  H01J37/26 ,  H01J37/28

CPC classification number: H01J37/265 ,  H01J37/28 ,  H01J2237/043

Abstract: The present invention concerns an ion irradiation system and has for its object to provide an ion irradiation system and method which enable one or more ions to be applied to a target point with high accuracy. The ion irradiation system according to the present invention comprises: an ion microprobe; a deflector for deflecting an ion microbeam generated by said ion microprobe; a micro slit for extracting a single or predetermined number of ions from said ion microbeam deflected by said deflector; a sample holder mechanism for holding a sample to be irradiated with said single or predetermined number of ions extracted through said micro slit; a scanning electron microscope mechanism for observing the surface of said sample in real time; a secondary electron detecting system for detecting secondary electrons which are emitted from the surface of said sample, said secondary electron detecting system including a secondary electron multiplier; and an electric field control circuit for controlling an electric field which is applied to said deflector, said electric field control circuit being composed of a clock generator, a counter connected to said clock generator and a high-voltage amplifier connected to said counter and having its output connected to said deflector; wherein said counter counts output signal pulses from said secondary electron multiplier and supplies a clock signal to said high-voltage amplifier of said electric field control circuit during counting of said single or predetermined number of ions and stops the supply of said clock signal to said high-voltage amplifier upon completion of counting of said single or predetermined number of ions, whereby said ion microbeam is chopped by said deflector one or more times instantaneously reverse its direction or deflection with respect to said micro slit, thereby extracting said single or predetermined number of ions through said micro slit.

Abstract translation: 本发明涉及一种离子照射系统，其目的是提供一种能够以高精度将一个或多个离子施加到目标点的离子照射系统和方法。 根据本发明的离子辐射系统包括：离子微探针; 偏转器，用于偏转由所述离子微探针产生的离子微束; 用于从由所述偏转器偏转的所述离子微束中提取单个或预定数量的离子的微缝; 用于保持要通过所述微狭缝提取的所述单个或预定数量离子照射的样品的样品保持器机构; 用于实时观察所述样品表面的扫描电子显微镜机构; 用于检测从所述样品的表面发射的二次电子的二次电子检测系统，所述二次电子检测系统包括二次电子倍增器; 以及用于控制施加到所述偏转器的电场的电场控制电路，所述电场控制电路由时钟发生器，连接到所述时钟发生器的计数器和连接到所述计数器的高压放大器组成，并且具有其 输出连接到所述偏转器; 其中所述计数器对来自所述二次电子倍增器的输出信号脉冲进行计数，并且在所述单个或预定数量的离子计数期间将时钟信号提供给所述电场控制电路的所述高压放大器，并停止将所述时钟信号提供给所述高电平 在完成所述单个或预定数量的离子的计数之后，所述离子微束被所述偏转器斩波一次或多次，相对于所述微缝隙瞬时地反向其方向或偏转，从而提取所述单个或预定数量的 离子通过所述微缝隙。

公开(公告)号：US20110248892A1

公开(公告)日：2011-10-13

申请号：US13165503

申请日：2011-06-21

Applicant: Takashi MATSUKAWA ,  Yoshinori SATOH ,  Takashi YOKOUCHI ,  Kensuke YOSHIDA ,  Tomoyuki SHINOHARA

Inventor： Takashi MATSUKAWA ,  Yoshinori SATOH ,  Takashi YOKOUCHI ,  Kensuke YOSHIDA ,  Tomoyuki SHINOHARA

IPC: H01Q1/38 ,  H01P11/00

CPC classification number: H01Q1/38 ,  H01Q9/30 ,  H01Q9/40 ,  H01Q9/42 ,  H05K3/041 ,  H05K3/046 ,  H05K3/20 ,  H05K3/281 ,  H05K3/386 ,  Y10T29/49016

Abstract: A method of manufacturing a film antenna includes: a process of sticking a bonding surface of a bonding sheet to a surface of a metal thin film of a plastic film fitted with metal thin film; a process of forming the antenna circuit part by completely cutting the plastic film fitted with metal thin film in a thickness direction thereof from the bonding surface, and half-cutting the bonding sheet in a thickness direction thereof; a process of peeling away portions of the plastic film fitted with metal thin film around the antenna circuit part; a process of laminating a first flexible plastic film onto the plastic film fitted with metal thin film side; a process of peeling away the bonding sheet; and a process of laminating a second flexible plastic film onto the surface of the metal thin film.

Abstract translation: 一种制造薄膜天线的方法包括：将粘合片的接合表面粘附到装有金属薄膜的塑料膜的金属薄膜的表面上的工艺; 通过从接合表面完全切割其厚度方向上装有金属薄膜的塑料膜，并在接合片的厚度方向上半切割来形成天线电路部分的工艺; 在天线电路部分周围剥离配有金属薄膜的塑料膜的部分的工序; 将第一柔性塑料膜层压到配有金属薄膜侧的塑料膜上的工序; 剥离接合片的工序; 以及将第二柔性塑料膜层压到金属薄膜的表面上的工序。

公开(公告)号：US20100214761A1

公开(公告)日：2010-08-26

申请号：US12776104

申请日：2010-05-07

Applicant: Takashi MATSUKAWA ,  Yuuki TANAKA ,  Masako ITO ,  Tomoyuki SHINOHARA ,  Shigeru ASHIDA ,  Yasushi NAKAGAWA

Inventor： Takashi MATSUKAWA ,  Yuuki TANAKA ,  Masako ITO ,  Tomoyuki SHINOHARA ,  Shigeru ASHIDA ,  Yasushi NAKAGAWA

IPC: H02B1/20 ,  H01B7/00

CPC classification number: H02G11/00 ,  H01B7/08 ,  H01B7/0892 ,  H04M1/0225 ,  H04M1/0227 ,  H04M1/0235 ,  H04M1/0274

Abstract: An electronic apparatus wiring harness is provided that includes: a fixed-side casing and a moving-side casing each having a circuit and rotatably journalled by a shaft having a through hole at its center, the moving-side casing being provided with a moving-side casing base which is rotatably journalled to the fixed-side casing, and a sliding portion which is provided so as to be slidable on a slide surface provided in the moving-side casing base. The circuit of the sliding portion and the circuit of the fixed-side casing are electrically connected together by an electric wire. The electric wire is a wiring harness having a flat cable portion in which a number of electric wire bodies are arranged in parallel and which is formed in a tape shape by jackets, and a jacket strip portion in which a number of the electric wire bodies are bundled; the flat cable portion is arranged in a bent manner so as to form a U shape on the slide surface of the moving-side casing base. The jacket strip portion is inserted through the through hole of the shaft, and extends from the slide surface toward the fixed-side casing.

Abstract translation: 提供一种电子设备线束，其包括：固定侧壳体和可动侧壳体，每个壳体具有电路，并且可旋转地轴支承在其中心处具有通孔的轴上，所述移动侧壳体设置有移动侧壳体， 侧壳体基座，其可旋转地安装在固定侧壳体上，滑动部分设置成可在设置在移动侧壳体底座中的滑动面上滑动。 滑动部分的电路和固定侧壳体的电路通过电线电连接在一起。 电线是具有扁平电缆部分的线束，其中多个电线体平行地布置并且由夹套形成为带状，并且其中多个电线体为多个电线体的护套部分 捆绑的 扁平电缆部分以弯曲的方式布置以便在可动侧壳体基座的滑动表面上形成U形。 护套片部分穿过轴的通孔插入，并从滑动表面向固定侧壳体延伸。

公开(公告)号：US08063310B2

公开(公告)日：2011-11-22

申请号：US12024517

申请日：2008-02-01

Applicant: Takashi Matsukawa ,  Yuuki Tanaka ,  Kazuo Tanihira ,  Tamaki Tanihira, legal representative ,  Shigeru Ashida ,  Kiyoshi Kuzuu ,  Kensuke Yoshida

Inventor： Takashi Matsukawa ,  Yuuki Tanaka ,  Kazuo Tanihira ,  Shigeru Ashida ,  Kiyoshi Kuzuu ,  Kensuke Yoshida

IPC: H01B7/08

CPC classification number: H01B11/203 ,  H01B7/0892 ,  H01R35/02 ,  H04M1/021 ,  H04M1/0214 ,  H04M1/0225 ,  H04M1/0235

Abstract: An electronic device includes at least first and second enclosures mounted so as to enable relative displacement therebetween, and an electric wire which electrically connects a circuit of the first enclosure and a circuit of the second enclosure. The electric wire includes a tape-shaped flat cable, including a plurality of internal wires arranged in parallel in a row.

Abstract translation: 一种电子设备包括至少第一和第二外壳，其安装成使得它们之间能够相对移动;以及电线，其将第一外壳的电路和第二外壳的电路电连接。 电线包括带状扁平电缆，其包括并排布置的多条内部电线。