中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

123 records (took 0.028 seconds)

    INSPECTION APPARATUS AND INSPECTION METHOD
    1.
    发明申请
    INSPECTION APPARATUS AND INSPECTION METHOD 审中-公开

    公开(公告)号：US20170243715A1

    公开(公告)日：2017-08-24

    申请号：US15434618

    申请日：2017-02-16

    Applicant: NuFlare Technology, Inc.

    Inventor： Munehiro OGASAWARA

    IPC: H01J37/244 ,  H01J37/26 ,  H01J37/20 ,  H01J37/29

    CPC classification number: H01J37/244 ,  H01J37/20 ,  H01J37/263 ,  H01J37/28 ,  H01J37/29 ,  H01J2237/043 ,  H01J2237/2449 ,  H01J2237/24495 ,  H01J2237/24592 ,  H01J2237/2804 ,  H01J2237/2806 ,  H01J2237/2817

    Abstract: According to one embodiment, an inspection apparatus includes an irradiation device irradiating an inspection target substrate with multiple beams, a detector detecting each of a plurality of charged particle beams formed by charged particles emitted from the inspection target substrate as an electrical signal, and a comparison processing circuitry performing pattern inspection by comparing image data of a pattern formed on the inspection target substrate, the pattern being reconstructed in accordance with the detected electrical signals, and reference image data. The detector includes a plurality of detection elements that accumulate charges, and a detection circuit that reads out the accumulated charges. The plurality of detection elements are grouped into a plurality of groups. The detection circuit operates in a manner of, during a period in which the charged particle beams are applied to the detection elements included in one group, reading out the charges accumulated in the detection elements included in one or more other groups.

    Automated ion beam idle
    4.
    发明授权
    Automated ion beam idle 有权
    自动离子束空闲

    公开(公告)号：US09123500B2

    公开(公告)日：2015-09-01

    申请号：US13436916

    申请日：2012-03-31

    Applicant: Tom Miller ,  Sean Kellogg ,  Jiri Zbranek

    Inventor： Tom Miller ,  Sean Kellogg ,  Jiri Zbranek

    IPC: H01J37/08 ,  H01J37/302 ,  H01J37/24 ,  H01J37/04

    CPC classification number: H01J37/08 ,  H01J37/045 ,  H01J37/243 ,  H01J37/302 ,  H01J2237/043 ,  H01J2237/0805 ,  H01J2237/0817 ,  H01J2237/30472 ,  H01J2237/31749

    Abstract: An improved method and apparatus for shutting down and restoring an ion beam in an ion beam system. Preferred embodiments provide a system for improved power control of a focused ion beam source, which utilizes an automatic detection of when a charged particle beam system is idle (the beam itself is not in use) and then automatically reducing the beam current to a degree where little or no ion milling occurs at any aperture plane in the ion column. Preferred embodiments include a controller operable to modify voltage to an extractor electrode and/or to reduce voltage to a source electrode when idle state of an ion source of the charged particle beam system is detected.

    Abstract translation: 一种用于在离子束系统中关闭和还原离子束的改进的方法和装置。 优选实施例提供了一种用于改进聚焦离子束源的功率控制的系统，其利用对带电粒子束系统何时空闲（束本身不使用）的自动检测，然后自动将束电流减小至 在离子柱中的任何孔径平面处都发生很少或没有离子研磨。 优选的实施例包括可操作以在检测到带电粒子束系统的离子源的空闲状态时，将电压修改为提取器电极和/或降低对源电极的电压的控制器。

    Inspection system
    5.
    发明授权
    Inspection system 有权
    检验系统

    公开(公告)号：US08759760B2

    公开(公告)日：2014-06-24

    申请号：US13050035

    申请日：2011-03-17

    Applicant: Dirk Zeidler ,  Ulrike Zeile

    Inventor： Dirk Zeidler ,  Ulrike Zeile

    IPC: G01N23/00

    CPC classification number: H01J37/28 ,  H01J37/09 ,  H01J37/228 ,  H01J2237/043 ,  H01J2237/06333 ,  H01J2237/206 ,  H01J2237/24585

    Abstract: A combined inspection system for inspecting an object disposable in an object plane 19, comprises a particle-optical system, which provides a particle-optical beam path 3, and a light-optical system, which provides a light-optical beam path 5; and a controller 60, wherein the light-optical system comprises at least one light-optical lens 30 arranged in the light-optical beam, which comprises a first lens surface facing the object plane which has two lens surfaces 34, 35 and a through hole 32, wherein the particle-optical system comprises a beam deflection device 23, in order to scan a primary particle beam 15 over a part of the sample plane 19, and wherein the controller is configured to control the beam deflection device 23 in such a manner that a deflected primary particle beam 15 intersects an optical axis 3 of the particle-optical beam path in a plane which is arranged inside the through hole.

    Abstract translation: 用于检查物体平面19中的一次性物品的组合检查系统包括提供粒子光束路径3的粒子光学系统和提供光束光路5的光学系统; 以及控制器60，其中所述光学系统包括布置在所述光 - 光束中的至少一个光 - 透镜30，所述至少一个光 - 透镜30包括面对所述物平面的第一透镜表面，所述第一透镜表面具有两个透镜表面34,35和通孔 32，其中所述粒子光学系统包括光束偏转装置23，以便在样本平面19的一部分上扫描初级粒子束15，并且其中控制器被配置为以这种方式控制束偏转装置23 偏转的一次粒子束15在布置在通孔内的平面中与粒子光束路径的光轴3相交。

    Ion Implantation at High Temperature Surface Equilibrium Conditions
    6.
    发明申请
    Ion Implantation at High Temperature Surface Equilibrium Conditions 有权
    离子注入在高温表面平衡条件下

    公开(公告)号：US20140147998A1

    公开(公告)日：2014-05-29

    申请号：US14170293

    申请日：2014-01-31

    Applicant: International Rectifier Corporation

    Inventor： Michael A. Briere

    IPC: H01L21/265 ,  H01L21/67

    CPC classification number: H01L21/67011 ,  C30B29/403 ,  C30B31/20 ,  C30B33/04 ,  H01J37/3171 ,  H01J2237/043 ,  H01J2237/188 ,  H01J2237/304 ,  H01J2237/31711 ,  H01J2237/31713 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/26546 ,  H01L21/3245 ,  H01L29/2003

    Abstract: There are disclosed herein various implementations of a method and system for ion implantation at high temperature surface equilibrium conditions. The method may include situating a III-Nitride semiconductor body in a surface equilibrium chamber, establishing a gas pressure greater than or approximately equal to a surface equilibrium pressure of the III-Nitride semiconductor body, and heating the III-Nitride semiconductor body to an elevated implantation temperature in the surface equilibrium chamber while substantially maintaining the gas pressure. The method also includes implanting the III-Nitride semiconductor body in the surface equilibrium at the elevated implantation temperature chamber while substantially maintaining the gas pressure, the implanting being performed using an ion implanter interfacing with the surface equilibrium chamber.

    Abstract translation: 在此公开了在高温表面平衡条件下用于离子注入的方法和系统的各种实施方式。 该方法可以包括将III-氮化物半导体体置于表面平衡室中，建立大于或等于III-氮化物半导体体的表面平衡压力的气体压力，并将III-氮化物半导体体加热到升高的 注入温度在表面平衡室中，同时基本保持气体压力。 该方法还包括将III-氮化物半导体体植入升高的植入温度室的表面平衡状态，同时基本上保持气体压力，使用与表面平衡室接合的离子注入机执行注入。

    Automated Ion Beam Idle
    7.
    发明申请
    Automated Ion Beam Idle 有权
    自动离子束空闲

    公开(公告)号：US20130256553A1

    公开(公告)日：2013-10-03

    申请号：US13436916

    申请日：2012-03-31

    Applicant: Tom Miller ,  Sean Kellogg ,  Jiri Zbranek

    Inventor： Tom Miller ,  Sean Kellogg ,  Jiri Zbranek

    IPC: H01J3/18 ,  H05H1/03

    CPC classification number: H01J37/08 ,  H01J37/045 ,  H01J37/243 ,  H01J37/302 ,  H01J2237/043 ,  H01J2237/0805 ,  H01J2237/0817 ,  H01J2237/30472 ,  H01J2237/31749

    Abstract: An improved method and apparatus for shutting down and restoring an ion beam in an ion beam system. Preferred embodiments provide a system for improved power control of a focused ion beam source, which utilizes an automatic detection of when a charged particle beam system is idle (the beam itself is not in use) and then automatically reducing the beam current to a degree where little or no ion milling occurs at any aperture plane in the ion column. Preferred embodiments include a controller operable to modify voltage to an extractor electrode and/or to reduce voltage to a source electrode when idle state of an ion source of the charged particle beam system is detected.

    Abstract translation: 一种用于在离子束系统中关闭和还原离子束的改进的方法和装置。 优选实施例提供了一种用于改进聚焦离子束源的功率控制的系统，其利用对带电粒子束系统何时空闲（束本身不使用）的自动检测，然后自动将束电流减小至 在离子柱中的任何孔径平面处都发生很少或没有离子研磨。 优选的实施例包括可操作以在检测到带电粒子束系统的离子源的空闲状态时，将电压修改为提取器电极和/或降低对源电极的电压的控制器。

    Methods of operating a nanoprober to electrically probe a device structure of an integrated circuit
    8.
    发明授权
    Methods of operating a nanoprober to electrically probe a device structure of an integrated circuit 失效
    操作纳米光栅以电探测集成电路的器件结构的方法

    公开(公告)号：US08536526B2

    公开(公告)日：2013-09-17

    申请号：US12344651

    申请日：2008-12-29

    Applicant: Paul D. Bell ,  Mark E. Masters ,  David S. Patrick

    Inventor： Paul D. Bell ,  Mark E. Masters ,  David S. Patrick

    IPC: G01N23/00

    CPC classification number: H01J37/268 ,  G01R31/307 ,  H01J37/265 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/24592

    Abstract: Methods for nanoprobing a device structure of an integrated circuit. The method may include scanning a primary charged particle beam across a first region of the device structure with at least one probe proximate to the first region and a second region of the device structure is masked from the primary charged particle beam. The method may further include collecting secondary electrons emitted from the first region of the device structure and the at least one probe to form a secondary electron image. The secondary electron image includes the first region and the at least one probe as imaged portions and the second region as a non-imaged portion. Alternatively, the second region may be scanned by the charged particle beam at a faster scan rate than the first region so that the second region is also an imaged portion of the secondary electron image.

    Abstract translation: 用于纳米结构的集成电路的器件结构的方法。 该方法可以包括利用靠近第一区域的至少一个探针扫描穿过器件结构的第一区域的初级带电粒子束，并且器件结构的第二区域被从初级带电粒子束掩蔽。 该方法还可以包括收集从器件结构的第一区域发射的二次电子和至少一个探针以形成二次电子图像。 二次电子图像包括作为成像部分的第一区域和至少一个探针，以及作为非成像部分的第二区域。 或者，第二区域可以以比第一区域更快的扫描速率被带电粒子束扫描，使得第二区域也是二次电子图像的成像部分。

Patent Agency Ranking