摘要:
A liquid crystal display apparatus including a glass substrate having a liquid display part formed thereon and a plurality of flexible boards connected to a periphery of the glass substrate. The apparatus also includes a liquid crystal drive IC mounted on each of the flexible boards so as to generate liquid crystal drive signals based on input signals. Additionally, the glass substrate has first internal lines and second internal lines. The first internal lines supply the input signals supplied from a first one of the flexible boards to a second one of the flexible boards, and the second internal lines return the input signals supplied from the first one of the flexible boards back to the first one of the flexible boards without any change.
摘要:
An object is to provide a program for a game apparatus for making a plurality of moving objects including a moving object operated by a player to compete in virtual space against each other, in which players are capable of fully using the stage effects specific to a virtual game to enjoy a heated racing game even when they vary in skill. In a program for a game apparatus comprising moving-object operating means, image-information generating means, and image-information outputting means, the program causes a computer to perform a step of producing land-configuration information, a step of monitoring movement information regarding a plurality of moving objects, a step of producing a special area object when results of monitoring meet predetermined requirements, a step of displaying the special area object in such a manner as to be viewable for the player, and a step of allowing another moving object to ride therein.
摘要:
A method for establishing electrical connection of a pressure-connector terminal by forming a plurality of divided terminals by providing a plurality of grooves on a connecting surface of a pressure-connector terminal used for TAB connection and COG connection, placing such divided connecting surfaces in contact with a connecting surface of an opposed terminal electrode, imperfectly hardening a bonding material under such condition, deforming a divided terminal by applying pressure and thereafter perfectly hardening the bonding material and a configuration of the pressure-connector terminal are disclosed.
摘要:
A semiconductor nonvolatile memory has a memory cell array in which each memory cell has a pair of charge traps and each charge trap stores data with at least three possible values. Different data values produce different read current values. To store data, a controller and a voltage supplying unit in the semiconductor nonvolatile memory successively program and verify the charge traps that require programming, using higher programming voltages for data values that must produce lower read currents. This operation is iterated on the charge traps that have not yet attained their necessary read current values, until no such charge traps remain. The programming voltages are set so that all charge traps require substantially the same number of programming iterations, regardless of the data being stored.
摘要:
A semiconductor device includes a semiconductor substrate, a plurality of first wirings disposed above the semiconductor substrate along a first direction, a diffusion layer that is disposed on the surface of the semiconductor substrate so as to extend along a second direction perpendicular to the first direction and which includes a plurality of first diffusion portions overlapping with the plurality of first wirings, a first conductive film that is disposed between adjacent first diffusion layer portions of the plurality of the first diffusion layer portions disposed along the plurality of first wirings, respectively, in a layer between the semiconductor substrate and the plurality of first wirings, and electrically coupled to the plurality of first wirings, a plurality of sidewall portions, each of which is formed on a lateral side of the first conductive film to be disposed between the first conductive film and its adjacent first diffusion layer portion so as to extend along the diffusion layer, and a second conductive film that has a predetermined thickness and is filled in spaces, each of which is interposed between two adjacent sidewall portions on each of the plurality of first diffusion layer portions, so as to extend along each of the plurality of first diffusion layer portions.
摘要:
A method having the steps of applying the same gate voltage to each of gate terminals of a plurality of memory cells via word lines to designate the memory cells as a write target, and simultaneously applying a write voltage that corresponds to each write data across drain-source terminals of two or more memory cells that are write targets via bit lines to write simultaneously a plurality of data elements having mutually different data values to the memory cells.
摘要:
There is provided a semiconductor non-volatile memory including: plural memory sections, a voltage application section, and a control section that controls the voltage application section wherein the control section controlling voltage application such that, based on a value of current detected by a current detection section, in a region where the current flowing in a channel region is greater than a predetermined target value at which a amount of charge accumulated has become a specific value in at least one of a first charge accumulating section or a second charge accumulating section, when a value of current flowing in the channel region approaches a target value, a rate of increase in the charge accumulating amount per time is decreased at least once.
摘要:
A method having the steps of applying the same gate voltage to each of gate terminals of a plurality of memory cells via word lines to designate the memory cells as a write target, and simultaneously applying a write voltage that corresponds to each write data across drain-source terminals of two or more memory cells that are write targets via bit lines to write simultaneously a plurality of data elements having mutually different data values to the memory cells.
摘要:
A MONOS type non-volatile semiconductor memory device has a memory cell array. The memory cell array includes a plurality of pairs of bit line and control line. These bit line-control line pairs are parallel to the channel on the substrate. The memory cell array also includes a plurality of memory cells. Each memory cell has a two-transistor configuration. A certain number of memory cells are disposed between the bit line and control line of each pair. These memory cells are connected in series, and connected with the bit line and control line alternately. The first gate electrode and second gate electrode in the memory cell are formed in strips in a direction perpendicular to the channel.
摘要:
A semiconductor nonvolatile memory has a memory cell array in which each memory cell has a pair of charge traps and each charge trap stores data with at least three possible values. Different data values produce different read current values. To store data, a controller and a voltage supplying unit in the semiconductor nonvolatile memory successively program and verify the charge traps that require programming, using higher programming voltages for data values that must produce lower read currents. This operation is iterated on the charge traps that have not yet attained their necessary read current values, until no such charge traps remain. The programming voltages are set so that all charge traps require substantially the same number of programming iterations, regardless of the data being stored.