公开(公告)号：US20130224381A1

公开(公告)日：2013-08-29

申请号：US13876756

申请日：2011-09-15

Applicant: Takeshi Masuda ,  Takuya Ideno ,  Masahiko Kajinuma ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

Inventor： Takeshi Masuda ,  Takuya Ideno ,  Masahiko Kajinuma ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

IPC: C23C16/44

CPC classification number: C23C16/44 ,  C23C16/4401 ,  H01L21/02197 ,  H01L21/02271

Abstract: In order to provide a thin film manufacturing method and a thin film manufacturing apparatus, wherein a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved, a dummy substrate (S2) is conveyed into a chamber (51), dummy processing gas is supplied to the dummy substrate (S2), a product substrate (S3) is conveyed into the chamber (51), and raw material gas different from the dummy processing gas, and containing therein metal material for manufacturing a thin film with the Metal Organic Chemical Vapor Deposition (MOCVD) method, is supplied to the product substrate (S3). Since the raw material gas is not used as dummy processing gas, the amount of metal material to be used can be inhibited, and a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved.

Abstract translation: 为了提供薄膜制造方法和薄膜制造装置，其中可以以低成本制造具有良好重复性的薄膜，并且以节省资源的方式，将虚设基板（S2）输送到室 （51）中，将假处理气体供给到虚拟基板（S2），将产品基板（S3）输送到室（51）中，将原料气体与虚拟处理气体不同，并且内装有用于制造的金属材料 将具有金属有机化学气相沉积（MOCVD）方法的薄膜供应到产品基板（S3）。 由于不使用原料气体作为虚拟处理气体，所以能够抑制金属材料的使用量，能够以低成本制造具有良好重复性的薄膜，并且以节省资源的方式。

公开(公告)号：US09145605B2

公开(公告)日：2015-09-29

申请号：US13876756

申请日：2011-09-15

Applicant: Takeshi Masuda ,  Takuya Ideno ,  Masahiko Kajinuma ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

Inventor： Takeshi Masuda ,  Takuya Ideno ,  Masahiko Kajinuma ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

IPC: C23C16/02 ,  C23C16/18 ,  C23C16/44 ,  H01L21/02

CPC classification number: C23C16/44 ,  C23C16/4401 ,  H01L21/02197 ,  H01L21/02271

Abstract: A thin film manufacturing method and a thin film manufacturing apparatus are provided to manufacture a thin film with good reproducibility. A dummy substrate is conveyed into a chamber, and a dummy processing gas is supplied to the dummy substrate. Moreover, a product substrate is conveyed into the chamber, and a raw material gas different from the dummy processing gas is supplied to the product substrate. The raw material gas contains metal material for manufacturing a thin film with a metal organic chemical vapor deposition (MOCVD) method. Since the raw material gas is not used as a dummy processing gas, the amount of metal material to be used can be minimized in manufacturing the thin film with good reproducibility.

Abstract translation: 提供薄膜制造方法和薄膜制造装置以制造具有良好重复性的薄膜。 虚拟衬底被输送到腔室中，并且虚拟处理气体被供给到虚拟衬底。 此外，将产品基板输送到室中，并且将不同于虚拟处理气体的原料气体供应到产品基板。 原料气体含有用金属有机化学气相沉积（MOCVD）法制造薄膜的金属材料。 由于原料气体不用作虚拟处理气体，所以在制造薄膜时可以将金属材料的使用量减到最小，再现性良好。

公开(公告)号：US20130216710A1

公开(公告)日：2013-08-22

申请号：US13825091

申请日：2011-09-13

Applicant: Takeshi Masuda ,  Masahiko Kajinuma ,  Takuya Ideno ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

Inventor： Takeshi Masuda ,  Masahiko Kajinuma ,  Takuya Ideno ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C01G25/00 ,  C01P2002/34 ,  C01P2004/03 ,  C01P2006/40 ,  C23C16/409 ,  C23C16/56 ,  H01L21/02197 ,  H01L21/02271 ,  H01L28/55

Abstract: [Problem] To provide a thin film production process and a thin film production device, both of which enable the production of a dielectric thin film having small surface roughness.[Solution] This thin film production process comprises: supplying a mixed gas to a substrate (S) that is placed in a chamber (51) and has been heated, wherein the mixed gas comprises a metal raw material gas that serves as a raw material for a dielectric thin film having perovskite-type crystals and an oxidation gas that can react with the metal raw material gas; stopping the supply of the metal raw material gas to the substrate (S); and, subsequent to the stopping of the supply of the metal raw material gas, limiting the supply of the oxidation gas to the substrate (S).

Abstract translation: 本发明提供薄膜制造方法和薄膜制造装置，能够制造表面粗糙度小的电介质薄膜。 [解决方案]该薄膜制造方法包括：将混合气体供给到放置在室（51）中并被加热的基板（S），其中混合气体包括用作原料的金属原料气体 对于具有钙钛矿型晶体的电介质薄膜和可与金属原料气体反应的氧化气体; 停止向基板（S）供给金属原料气体; 并且在停止供给金属原料气体之后，限制氧化气体供给到基板（S）。