公开(公告)号：US09169558B2

公开(公告)日：2015-10-27

申请号：US13203866

申请日：2009-11-06

Applicant: Jun Hirose ,  Kazuyuki Tezuka ,  Yohei Uchida ,  Mutsunori Koyomogi ,  Takahiro Matsuda ,  Ryousuke Dohi ,  Kouji Nishino ,  Nobukazu Ikeda

Inventor： Jun Hirose ,  Kazuyuki Tezuka ,  Yohei Uchida ,  Mutsunori Koyomogi ,  Takahiro Matsuda ,  Ryousuke Dohi ,  Kouji Nishino ,  Nobukazu Ikeda

IPC: C23C16/455 ,  H01L21/67

CPC classification number: C23C16/45561 ,  H01L21/67017 ,  Y10T137/0396

Abstract: To provide a fluid control apparatus capable of reducing the space, while reducing the cost. A fluid control apparatus has a fluid controlling unit and a fluid introducing unit. The fluid introducing unit is divided into three parts: a first and a second inlet-side shutoff/open parts disposed on the inlet side, each made up of 2×N/2, disposed between the first and second inlet-side shutoff/open parts and the fluid controlling unit.

Abstract translation: 提供能够减少空间的流体控制装置，同时降低成本。 流体控制装置具有流体控制单元和流体引入单元。 流体引入单元被分为三部分：设置在入口侧的第一和第二入口侧截止/打开部分，每个由2×N / 2构成，设置在第一和第二入口侧截止/打开之间 零件和流体控制单元。

公开(公告)号：US09145605B2

公开(公告)日：2015-09-29

申请号：US13876756

申请日：2011-09-15

Applicant: Takeshi Masuda ,  Takuya Ideno ,  Masahiko Kajinuma ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

Inventor： Takeshi Masuda ,  Takuya Ideno ,  Masahiko Kajinuma ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

IPC: C23C16/02 ,  C23C16/18 ,  C23C16/44 ,  H01L21/02

CPC classification number: C23C16/44 ,  C23C16/4401 ,  H01L21/02197 ,  H01L21/02271

Abstract: A thin film manufacturing method and a thin film manufacturing apparatus are provided to manufacture a thin film with good reproducibility. A dummy substrate is conveyed into a chamber, and a dummy processing gas is supplied to the dummy substrate. Moreover, a product substrate is conveyed into the chamber, and a raw material gas different from the dummy processing gas is supplied to the product substrate. The raw material gas contains metal material for manufacturing a thin film with a metal organic chemical vapor deposition (MOCVD) method. Since the raw material gas is not used as a dummy processing gas, the amount of metal material to be used can be minimized in manufacturing the thin film with good reproducibility.

Abstract translation: 提供薄膜制造方法和薄膜制造装置以制造具有良好重复性的薄膜。 虚拟衬底被输送到腔室中，并且虚拟处理气体被供给到虚拟衬底。 此外，将产品基板输送到室中，并且将不同于虚拟处理气体的原料气体供应到产品基板。 原料气体含有用金属有机化学气相沉积（MOCVD）法制造薄膜的金属材料。 由于原料气体不用作虚拟处理气体，所以在制造薄膜时可以将金属材料的使用量减到最小，再现性良好。

公开(公告)号：US20100155971A1

公开(公告)日：2010-06-24

申请号：US12641936

申请日：2009-12-18

Applicant: Yohei Uchida

Inventor： Yohei Uchida

IPC: H01L21/306 ,  B01F3/02

CPC classification number: F17D1/04

Abstract: A gas mixture supplying method includes supplying plural kinds of gases through gas supply lines connected to a common pipeline and supplying a gas mixture of the plural kinds of gases from a gas outlet of the common pipeline into a region where the gas mixture is used through a gas mixture supply line. When a typical gas supplied in a gaseous state from a gas supply unit and a liquid source gas vaporized by heating a liquid source material supplied from a liquid source material supply unit by a vaporizing unit are supplied simultaneously, the liquid source gas is supplied from one of the gas supply lines provided at a position closer to the gas outlet than that for the typical gas, and the liquid source gas is supplied to a downstream side of a filter for removing particles in the typical gas.

Abstract translation: 一种气体混合物供给方法包括：通过连接到公共管道的气体供给管线供给多种气体，并将多种气体的气体混合物从公共管道的气体出口供给到通过使用气体混合物的区域 气体混合物供应线。 当从气体供给单元供给气体的典型气体和通过由蒸发单元加热从液体源材料供给单元供给的液体源材料而蒸发的液体源气体同时供给时，液体源气体从一个 设置在比典型气体更靠近气体出口的位置处的气体供给管线，并且液体源气体被供给到用于除去典型气体中的颗粒的过滤器的下游侧。

公开(公告)号：US20060198591A1

公开(公告)日：2006-09-07

申请号：US11335467

申请日：2006-01-20

Applicant: Shuhei Hayami ,  Mitsuhiro Kawasaki ,  Yohei Uchida

Inventor： Shuhei Hayami ,  Mitsuhiro Kawasaki ,  Yohei Uchida

IPC: G02B6/036

CPC classification number: G02B6/03688 ,  C03B37/01413 ,  C03B2201/12 ,  C03B2201/31 ,  C03B2203/22 ,  C03B2203/23 ,  C03B2203/36 ,  G02B6/02019 ,  G02B6/02242 ,  G02B6/02266 ,  G02B6/03605 ,  G02B6/03666

Abstract: The present invention provides an optical fiber of which a zero dispersion wavelength falls within a range of between 1,250 nm and 1,350 nm inclusive, transmission loss at 1,550 nm is equal to or less than 0.185 dB/km, chromatic dispersion at 1,550 nm is within the range of 19±1 ps/nm·km, a dispersion slope at 1,550 nm is equal to or less than 0.06 ps/nm2·km, an effective area Aeff is equal to or more than 105 μm2, a cable cutoff wavelength λcc is equal to or less than 1,530 nm, polarization mode dispersion is equal to or less than 0.1 ps/km1/2, and a loss when the optical fiber is wound on a mandrel having an outer diameter of 20 mm is equal to or less than 10 dB/m.

Abstract translation: 本发明提供一种零色散波长落在1,250nm和1,350nm之间的光纤，其中在1,550nm处的传输损耗等于或小于0.185dB / km，在1,550nm处的色散在 范围为19±1ps / nm.km，1,550nm处的色散斜率等于或小于0.06ps / nm 2·km，有效面积A < 等于或大于105μm2，电缆截止波长λcc等于或小于1530nm，偏振模色散等于或小于0.1ps / km 1/2，当光纤缠绕在外径为20mm的心轴上时的损耗为10dB / m以下。

公开(公告)号：US06665482B2

公开(公告)日：2003-12-16

申请号：US10072996

申请日：2002-02-12

Applicant: Mitsuhiro Kawasaki ,  Yohei Uchida ,  Hiroaki Oonuma

Inventor： Mitsuhiro Kawasaki ,  Yohei Uchida ,  Hiroaki Oonuma

IPC: G02B602

CPC classification number: G02B6/03633 ,  G02B6/02019 ,  G02B6/02266 ,  G02B6/02271 ,  G02B6/0228 ,  G02B6/0286

Abstract: The optical fiber includes a center core portion, a side core portion and clad portion, which has a dispersion value of 14-20 ps/nm/km at a wavelength of 1550 nm, a dispersion slope of 0.05-0.08 ps/nm2/km at a wavelength of 1550 nm and a transmission attenuation of 0.2 dB/km or less at a wavelength of 1550 nm, wherein the relative refractive index difference &Dgr;1 between the center core portion and the clad portion is 0.25-0.50%, the relative refractive index difference &Dgr;2 between the side core portion and the clad portion is 0.05-0.30%, an inequality &Dgr;2

Abstract translation: 光纤包括中心芯部分，侧芯部分和包层部分，其在1550nm的波长处具有14-20ps / nm / km的色散值，色散斜率为0.05-0.08ps / nm 2 波长为1550nm的波长λ/ km，波长1550nm的透射衰减为0.2dB / km以下，其中，中心纤芯部与包层部之间的相对折射率差Δ1为0.25〜0.50％， 侧芯部与包层部之间的相对折射率差Δ2为0.05-0.30％，满足不等式Delta2

公开(公告)号：US20130224381A1

公开(公告)日：2013-08-29

申请号：US13876756

申请日：2011-09-15

Applicant: Takeshi Masuda ,  Takuya Ideno ,  Masahiko Kajinuma ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

Inventor： Takeshi Masuda ,  Takuya Ideno ,  Masahiko Kajinuma ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

IPC: C23C16/44

CPC classification number: C23C16/44 ,  C23C16/4401 ,  H01L21/02197 ,  H01L21/02271

Abstract: In order to provide a thin film manufacturing method and a thin film manufacturing apparatus, wherein a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved, a dummy substrate (S2) is conveyed into a chamber (51), dummy processing gas is supplied to the dummy substrate (S2), a product substrate (S3) is conveyed into the chamber (51), and raw material gas different from the dummy processing gas, and containing therein metal material for manufacturing a thin film with the Metal Organic Chemical Vapor Deposition (MOCVD) method, is supplied to the product substrate (S3). Since the raw material gas is not used as dummy processing gas, the amount of metal material to be used can be inhibited, and a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved.

Abstract translation: 为了提供薄膜制造方法和薄膜制造装置，其中可以以低成本制造具有良好重复性的薄膜，并且以节省资源的方式，将虚设基板（S2）输送到室 （51）中，将假处理气体供给到虚拟基板（S2），将产品基板（S3）输送到室（51）中，将原料气体与虚拟处理气体不同，并且内装有用于制造的金属材料 将具有金属有机化学气相沉积（MOCVD）方法的薄膜供应到产品基板（S3）。 由于不使用原料气体作为虚拟处理气体，所以能够抑制金属材料的使用量，能够以低成本制造具有良好重复性的薄膜，并且以节省资源的方式。

公开(公告)号：US20100154908A1

公开(公告)日：2010-06-24

申请号：US12644745

申请日：2009-12-22

Applicant: Yohei UCHIDA ,  Takahiro Yamamoto

Inventor： Yohei UCHIDA ,  Takahiro Yamamoto

IPC: G05D11/02 ,  B01D35/02

CPC classification number: G05D11/132 ,  Y10T137/0363 ,  Y10T137/8122 ,  Y10T137/87684

Abstract: A gas mixture supplying method includes supplying plural kinds of gases through gas supply lines connected to a common pipeline and supplying a gas mixture of the plural kinds of gases from a gas outlet of the common pipeline to a region where the gas mixture is used through a gas mixture supply line. When two or more gases having different flow rates are supplied simultaneously, a gas having a relatively low flow rate is supplied from one of the gas supply lines provided at a position closer to the gas outlet than that for a gas having a relatively high flow rate.

Abstract translation: 一种气体混合物供给方法包括通过连接到公共管道的气体供给管线供给多种气体，并将多种气体的气体混合物从公共管道的气体出口供给到通过气体混合物的区域 气体混合物供应线。 当同时供给具有不同流量的两种或更多种气体时，从设置在比气体出口更靠近气体出口的位置的气体供给管线之一供给具有相对较低流量的气体，而不是具有较高流量的气体 。

公开(公告)号：US20120031500A1

公开(公告)日：2012-02-09

申请号：US13203866

申请日：2009-11-06

Applicant: Jun Hirose ,  Kazuyuki Tezuka ,  Yohei Uchida ,  Mutsunori Koyonogi ,  Takahiro Matsuda ,  Ryousuke Dohi ,  Kouji Nishino ,  Nobukazu Ikeda

Inventor： Jun Hirose ,  Kazuyuki Tezuka ,  Yohei Uchida ,  Mutsunori Koyonogi ,  Takahiro Matsuda ,  Ryousuke Dohi ,  Kouji Nishino ,  Nobukazu Ikeda

IPC: F17D1/16

CPC classification number: C23C16/45561 ,  H01L21/67017 ,  Y10T137/0396

Abstract: To provide a fluid control apparatus capable of reducing the space, while reducing the cost.A fluid control apparatus 1 has a fluid controlling unit 2 and a fluid introducing unit 3. The fluid introducing unit 3 is divided into three parts: a first and a second inlet-side shutoff/open parts 5, 6 disposed on the inlet side, each made up of 2×N/2 on-off valves 23, and a fluid controlling unit-side shutoff/open part 7 made up of 4×M on-off valves 23, disposed between the first and second inlet-side shutoff/open parts 5, 6 and the fluid controlling unit 2.

Abstract translation: 提供能够减少空间的流体控制装置，同时降低成本。 流体控制装置1具有流体控制单元2和流体引入单元3.流体引入单元3被分成三部分：设置在入口侧的第一和第二入口侧截止/打开部分5,6， 每个都由2×N / 2开关阀23和由4×M开关阀23构成的​​流体控制单元侧关闭/打开部分7，其设置在第一和第二入口侧截止阀/ 打开部分5,6和流体控制单元2。

公开(公告)号：US20130216710A1

公开(公告)日：2013-08-22

申请号：US13825091

申请日：2011-09-13

Applicant: Takeshi Masuda ,  Masahiko Kajinuma ,  Takuya Ideno ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

Inventor： Takeshi Masuda ,  Masahiko Kajinuma ,  Takuya Ideno ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C01G25/00 ,  C01P2002/34 ,  C01P2004/03 ,  C01P2006/40 ,  C23C16/409 ,  C23C16/56 ,  H01L21/02197 ,  H01L21/02271 ,  H01L28/55

Abstract: [Problem] To provide a thin film production process and a thin film production device, both of which enable the production of a dielectric thin film having small surface roughness.[Solution] This thin film production process comprises: supplying a mixed gas to a substrate (S) that is placed in a chamber (51) and has been heated, wherein the mixed gas comprises a metal raw material gas that serves as a raw material for a dielectric thin film having perovskite-type crystals and an oxidation gas that can react with the metal raw material gas; stopping the supply of the metal raw material gas to the substrate (S); and, subsequent to the stopping of the supply of the metal raw material gas, limiting the supply of the oxidation gas to the substrate (S).

Abstract translation: 本发明提供薄膜制造方法和薄膜制造装置，能够制造表面粗糙度小的电介质薄膜。 [解决方案]该薄膜制造方法包括：将混合气体供给到放置在室（51）中并被加热的基板（S），其中混合气体包括用作原料的金属原料气体 对于具有钙钛矿型晶体的电介质薄膜和可与金属原料气体反应的氧化气体; 停止向基板（S）供给金属原料气体; 并且在停止供给金属原料气体之后，限制氧化气体供给到基板（S）。

公开(公告)号：US08276891B2

公开(公告)日：2012-10-02

申请号：US12641936

申请日：2009-12-18

Applicant: Yohei Uchida

Inventor： Yohei Uchida

IPC: B01F3/04

CPC classification number: F17D1/04

Abstract: A gas mixture supplying method includes supplying plural kinds of gases through gas supply lines connected to a common pipeline and supplying a gas mixture of the plural kinds of gases from a gas outlet of the common pipeline into a region where the gas mixture is used through a gas mixture supply line. When a typical gas supplied in a gaseous state from a gas supply unit and a liquid source gas vaporized by heating a liquid source material supplied from a liquid source material supply unit by a vaporizing unit are supplied simultaneously, the liquid source gas is supplied from one of the gas supply lines provided at a position closer to the gas outlet than that for the typical gas, and the liquid source gas is supplied to a downstream side of a filter for removing particles in the typical gas.

Abstract translation: 一种气体混合物供给方法包括：通过连接到公共管道的气体供给管线供给多种气体，并将多种气体的气体混合物从公共管道的气体出口供给到通过 气体混合物供应线。 当从气体供给单元供给气体的典型气体和通过由蒸发单元加热从液体源材料供给单元供给的液体源材料而蒸发的液体源气体同时供给时，液体源气体从一个 设置在比典型气体更靠近气体出口的位置处的气体供给管线，并且液体源气体被供给到用于除去典型气体中的颗粒的过滤器的下游侧。