公开(公告)号：US20120003819A1

公开(公告)日：2012-01-05

申请号：US13135031

申请日：2011-06-23

申请人： Terry Arthur Francis ,  Satoshi Hasaka ,  Paul David Brabant ,  Robert Torres, JR. ,  He Hong ,  Alexander Reznicek ,  Thomas N. Adam ,  Devendra K. Sadana

发明人： Terry Arthur Francis ,  Satoshi Hasaka ,  Paul David Brabant ,  Robert Torres, JR. ,  He Hong ,  Alexander Reznicek ,  Thomas N. Adam ,  Devendra K. Sadana

IPC分类号： H01L21/205

CPC分类号： H01L21/02532 ,  C23C16/30 ,  C23C16/325 ,  C30B25/02 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636

摘要： The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

摘要翻译： 本发明公开了在改进的化学气相沉积（mCVD）条件下，外延硅膜可以通过将包含在腔室内的衬底暴露于相对高的载气流量与在较低的硅前体流速 小于约550℃，压力范围为约10mTorr-200Torr。 此外，通过在改进的CVD条件下使用四硅烷作为硅源和含碳气体如十二烷基甲基环己硅烷或四甲基二硅烷以相对高的流速进行沉积，可以将晶体Si原位掺杂以含有相对高水平的取代碳 。

公开(公告)号：US08759200B2

公开(公告)日：2014-06-24

申请号：US13135031

申请日：2011-06-23

申请人： Terry Arthur Francis ,  Satoshi Hasaka ,  Paul David Brabant ,  Robert Torres, Jr. ,  Hong He ,  Alexander Reznicek ,  Thomas N. Adam ,  Devendra K. Sadana

发明人： Terry Arthur Francis ,  Satoshi Hasaka ,  Paul David Brabant ,  Robert Torres, Jr. ,  Hong He ,  Alexander Reznicek ,  Thomas N. Adam ,  Devendra K. Sadana

IPC分类号： H01L21/205

CPC分类号： H01L21/02532 ,  C23C16/30 ,  C23C16/325 ,  C30B25/02 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636

摘要： The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

摘要翻译： 本发明公开了在改进的化学气相沉积（mCVD）条件下，外延硅膜可以通过将包含在腔室内的衬底暴露于相对高的载气流量与在较低的硅前体流速 小于约550℃，压力范围为约10mTorr-200Torr。 此外，通过在改进的CVD条件下使用四硅烷作为硅源和含碳气体如十二烷基甲基环己硅烷或四甲基二硅烷以相对高的流速进行沉积，可以将晶体Si原位掺杂以含有相对高水平的取代碳 。

公开(公告)号：US20120024223A1

公开(公告)日：2012-02-02

申请号：US13135033

申请日：2011-06-23

申请人： Robert Torres, JR. ,  Terry Arthur Francis ,  Satoshi Hasaka ,  Paul David Brabant

发明人： Robert Torres, JR. ,  Terry Arthur Francis ,  Satoshi Hasaka ,  Paul David Brabant

IPC分类号： C30B25/14 ,  C30B25/12

CPC分类号： H01L21/02529 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

摘要翻译： 环己硅烷用于化学气相沉积方法以将外延含硅膜沉积在基材上。 这种方法在半导体制造中可用于提供各种优点，包括在异质表面上的均匀沉积，高沉积速率和更高的制造生产率。 此外，可以通过在改进的CVD条件下使用环己硅烷作为硅源和含碳气体如十二烷基甲基环己硅烷或四甲基二硅烷以相对高的流速进行沉积，可以原位掺杂晶体Si以含有相对高水平的取代碳 。