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    Silicon wafer and process for the heat treatment of a silicon wafer
    1.
    发明授权
    Silicon wafer and process for the heat treatment of a silicon wafer 有权
    硅晶片和用于硅晶片热处理的工艺

    公开(公告)号：US07828893B2

    公开(公告)日：2010-11-09

    申请号：US11386855

    申请日：2006-03-22

    申请人： Timo Mueller ,  Wilfried von Ammon ,  Erich Daub ,  Peter Krottenthaler ,  Klaus Messmann ,  Friedrich Passek ,  Reinhold Wahlich ,  Arnold Kuehhorn ,  Johannes Studener

    发明人： Timo Mueller ,  Wilfried von Ammon ,  Erich Daub ,  Peter Krottenthaler ,  Klaus Messmann ,  Friedrich Passek ,  Reinhold Wahlich ,  Arnold Kuehhorn ,  Johannes Studener

    IPC分类号： C30B15/10

    CPC分类号： C30B31/14 ,  C30B25/12 ,  C30B29/06 ,  C30B33/02 ,  Y10T117/1052 ,  Y10T117/1068

    摘要： A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

    摘要翻译： 不具有通过与硅晶片接合而产生的外延沉积层或层的硅晶片，氮浓度为1×1013-8.1014原子/ cm3，氧浓度为5.2×1017〜7.5×1017原子/ cm3，a 中心厚度BMD密度为3·108-2·1010cm-3，线性滑移的累积长度为3cm，面积滑移区域的累积面积为7cm 2，前表面具有<45个氮诱导缺陷 DNN通道中的>0.13μmLSE，厚度至少为5μm的层，其中发生尺寸为≥0.09μm的nlE; 1×104 COPs / cm 3，厚度≥5μm的无BMD层。 这样的晶片可以通过热处理硅晶片，放置在基板保持器上，根据晶片掺杂使用的特定的基板保持器来制造。 对于每个保持器，选择最大加热速率以避免形成滑动。

    Process for producing silicon semiconductor wafers with low defect density
    3.
    发明授权
    Process for producing silicon semiconductor wafers with low defect density 失效
    具有低缺陷密度的硅半导体晶片的制造方法

    公开(公告)号：US5935320A

    公开(公告)日：1999-08-10

    申请号：US918843

    申请日：1997-08-26

    申请人： Dieter Graef ,  Wilfried Von Ammon ,  Reinhold Wahlich ,  Peter Krottenthaler ,  Ulrich Lambert

    发明人： Dieter Graef ,  Wilfried Von Ammon ,  Reinhold Wahlich ,  Peter Krottenthaler ,  Ulrich Lambert

    IPC分类号： C30B29/06 ,  C30B13/00 ,  C30B15/00 ,  C30B33/02 ,  H01L21/322 ,  H01L21/324

    CPC分类号： C30B15/00 ,  C30B13/00 ,  C30B29/06 ,  Y10S117/916

    摘要： A process for producing silicon wafers with low defect density is one wherein a) a silicon single crystal having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 is produced by molten material being solidified to form a single crystal and is then cooled, and the holding time of the single crystal during cooling in the temperature range of from 850.degree. C. to 1100.degree. C. is less than 80 minutes; b) the single crystal is processed to form silicon wafers; and c) the silicon wafers are annealed at a temperature of at least 1000.degree. C. for at least one hour. Also, it is possible to prepare a silicon single crystal based upon having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 and a nitrogen doping concentration of at least 1*10.sup.14 /cm.sup.3 for (a) above.

    摘要翻译： 一种制造低缺陷密度的硅晶片的方法是其中a）通过熔融材料固化形成单晶并且然后冷却而产生具有至少4×10 17 / cm 3的氧掺杂浓度的硅单晶，然后冷却 在850℃至1100℃的温度范围内的冷却期间单晶的保持时间小于80分钟; b）处理单晶以形成硅晶片; 和c）将硅晶片在至少1000℃的温度下退火至少1小时。 此外，可以基于上述（a）的氧掺杂浓度至少为4×10 17Ω/ cm 3和氮掺杂浓度为至少1×10 14 / cm 3来制备硅单晶。

    METHOD OF FORMING A MATERIAL LAYER IN A SEMICONDUCTOR STRUCTURE
    4.
    发明申请
    METHOD OF FORMING A MATERIAL LAYER IN A SEMICONDUCTOR STRUCTURE 有权
    在半导体结构中形成材料层的方法

    公开(公告)号：US20140065808A1

    公开(公告)日：2014-03-06

    申请号：US13601072

    申请日：2012-08-31

    申请人： Carsten Grass ,  Martin Trentzsch ,  Boris Bayha ,  Peter Krottenthaler

    发明人： Carsten Grass ,  Martin Trentzsch ,  Boris Bayha ,  Peter Krottenthaler

    IPC分类号： H01L21/336

    CPC分类号： H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/28255 ,  H01L29/1054 ,  H01L29/513 ,  H01L29/517

    摘要： A method comprises depositing a first portion of a first material layer on a semiconductor structure. A first run of a post-treatment process is performed for modifying at least the first portion of the first material layer. After the first run of the post-treatment process, a second portion of the first material layer is deposited. The second portion is formed of substantially the same material as the first portion. After the deposition of the second portion of the first material layer, a second run of the post-treatment process is performed for modifying at least the second portion of the first material layer.

    摘要翻译： 一种方法包括在半导体结构上沉积第一材料层的第一部分。 执行后处理过程的第一次运行用于修改至少第一材料层的第一部分。 在后处理过程的第一次运行之后，沉积第一材料层的第二部分。 第二部分由与第一部分基本相同的材料形成。 在沉积第一材料层的第二部分之后，执行后处理工艺的第二次运行，以修饰至少第二材料层的第二部分。