公开(公告)号：US5871610A

公开(公告)日：1999-02-16

申请号：US24913

申请日：1993-03-02

申请人： Tomio Minohoshi ,  Toyohiko Takeda ,  Hideo Numata

发明人： Tomio Minohoshi ,  Toyohiko Takeda ,  Hideo Numata

IPC分类号： H01L21/52 ,  H01L21/00 ,  B32B31/00

CPC分类号： H01L21/67144 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  Y10T156/171 ,  Y10T156/1744 ,  Y10T29/53174 ,  Y10T29/53187

摘要： Lead frames supplied from a first supply unit are intermittently conveyed in a non-oxidizing atmosphere. An adhesive is supplied from a second supply unit onto islands of the lead frames, and also semiconductor chips are supplied from a third supply unit onto the islands. When one of different kinds of semiconductor chips supplied from the third supply unit is selected, the selected semiconductor chip is held by a holder having a configuration adapted to the selected semiconductor chip. Therefore, transfer means for semiconductor chips includes at least two kinds of holders.

摘要翻译： 从第一供应单元供应的引线框在非氧化气氛中间歇地输送。 粘合剂从第二供应单元供应到引线框架的岛上，并且半导体芯片从第三供应单元供应到岛上。 当选择从第三供电单元提供的不同种类的半导体芯片中的一种时，所选择的半导体芯片由具有适合所选择的半导体芯片的配置的保持器保持。 因此，用于半导体芯片的转移装置包括至少两种保持器。

公开(公告)号：US5866198A

公开(公告)日：1999-02-02

申请号：US858574

申请日：1997-05-19

申请人： Mitsuo Sato ,  Kiyoshi Yoshikawa ,  Tomio Minohoshi

发明人： Mitsuo Sato ,  Kiyoshi Yoshikawa ,  Tomio Minohoshi

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/205 ,  B05D5/12

CPC分类号： C23C16/455 ,  C30B25/14 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262

摘要： A vapor deposition device for fabricating a compound semiconductor has many organometallic gas supply systems, each of which for synthesizing and supplying more than one organometallic gas, a first group of valves connected to the organometallic gas supply systems, and the first group of valves for selecting a specific system from among the organometallic gas supply systems by opening and closing the relevant valve group, an organometallic gas supply line connected to the first valve group, a second group of valves connected to the first group of valves for selecting the next organometallic gas supply system to be used among the organometallic gas supply systems by opening and closing the relevant valve group, a vent line connected to the second valve group, a reaction furnace connected to the organometallic gas supply means for continuously propagating different types of thin-films by means of organometallic gases supplied from the organometallic gas supply line, a microcomputer system for controlling the operation of the first group of valves and the second group of valves.

摘要翻译： 用于制造化合物半导体的气相沉积装置具有许多有机金属气体供应系统，每个用于合成和供应多于一个的有机金属气体，连接到有机金属气体供应系统的第一组阀以及用于选择的第一组阀 有机金属气体供给系统中的特定系统，通过打开和关闭相关阀组，连接到第一阀组的有机金属气体供应管线，连接到第一组阀的第二组阀，用于选择下一个有机金属气体供应 通过打开和关闭相关阀组在有机金属气体供应系统中使用的系统，连接到第二阀组的排气管线，连接到有机金属气体供应装置的反应炉，用于通过装置连续传播不同类型的薄膜 从有机金属气体供应管道提供的有机金属气体，微电脑系统 m，用于控制第一组阀和第二组阀的操作。