Surface acoustic wave filter device
    1.
    发明授权
    Surface acoustic wave filter device 有权
    表面声波滤波装置

    公开(公告)号:US08659368B2

    公开(公告)日:2014-02-25

    申请号:US13268150

    申请日:2011-10-07

    申请人: Tomohisa Komura

    发明人: Tomohisa Komura

    IPC分类号: H03H9/64 H03H9/00

    CPC分类号: H03H9/725 H03H9/0576

    摘要: An IDT electrode defining any one of a plurality of surface acoustic wave resonators defining series arm resonators and parallel arm resonators, except for the IDT electrode having a smallest amount of heat generation per unit time when a signal flows between first and second signal terminals, does not face wiring electrodes.

    摘要翻译: 限定串联臂谐振器和并联臂谐振器的多个表面声波谐振器中的任何一个的IDT电极,除了信号在第一和第二信号端子之间流动时每单位时间发热量最小的IDT电极之外, 不面对接线电极。

    SURFACE ACOUSTIC WAVE FILTER DEVICE
    2.
    发明申请
    SURFACE ACOUSTIC WAVE FILTER DEVICE 有权
    表面声波滤波器

    公开(公告)号:US20120086524A1

    公开(公告)日:2012-04-12

    申请号:US13268150

    申请日:2011-10-07

    申请人: Tomohisa KOMURA

    发明人: Tomohisa KOMURA

    IPC分类号: H03H9/64

    CPC分类号: H03H9/725 H03H9/0576

    摘要: An IDT electrode defining any one of a plurality of surface acoustic wave resonators defining series arm resonators and parallel arm resonators, except for the IDT electrode having a smallest amount of heat generation per unit time when a signal flows between first and second signal terminals, does not face wiring electrodes.

    摘要翻译: 限定串联臂谐振器和并联臂谐振器的多个表面声波谐振器中的任何一个的IDT电极,除了信号在第一和第二信号端子之间流动时每单位时间发热量最小的IDT电极之外, 不面对接线电极。

    SURFACE ACOUSTIC WAVE DEVICE
    3.
    发明申请
    SURFACE ACOUSTIC WAVE DEVICE 有权
    表面声波设备

    公开(公告)号:US20070013459A1

    公开(公告)日:2007-01-18

    申请号:US11531003

    申请日:2006-09-12

    IPC分类号: H03H9/72 H03H9/64

    摘要: A surface acoustic wave branching filter includes a first filter and a second filter each including a plurality of surface acoustic wave resonators arranged in a ladder circuit configuration. The first filter in which the frequency range of the passband is relatively low is provided on a first piezoelectric substrate, and the second filter in which the frequency range of the passband is relatively high is provided on a second piezoelectric substrate. The first piezoelectric substrate and the second piezoelectric substrate are rotation Y-cut X-propagation LiTaO3 substrates, and the cut angle of the first piezoelectric substrate is greater than the cut angle of the second piezoelectric substrate.

    摘要翻译: 表面声波分波器包括第一滤波器和第二滤波器,每个滤波器包括以梯形电路配置布置的多个表面声波谐振器。 在第一压电基板上设置有通带的频率范围相对较低的第一滤波器,在第二压电基板上设置通带频率相对较高的第二滤波器。 第一压电基板和第二压电基板是旋转Y切X传播LiTaO 3 3衬底,第一压电基片的切割角大于第二压电基片的切割角。

    One-port surface acoustic wave resonator and surface acoustic wave filter
    4.
    发明申请
    One-port surface acoustic wave resonator and surface acoustic wave filter 审中-公开
    单端口声表面波谐振器和声表面波滤波器

    公开(公告)号:US20060131992A1

    公开(公告)日:2006-06-22

    申请号:US10560221

    申请日:2004-06-10

    IPC分类号: H03H9/25

    摘要: A one-port surface acoustic wave resonator includes a rotated Y-cut LiTaO3 substrate, an interdigital electrode transducer disposed on the LiTaO3 substrate, and reflectors disposed on both sides of the interdigital electrode transducer in the surface acoustic wave propagation direction of the interdigital electrode transducer. When the electrode finger width of the interdigital electrode transducer is denoted by a and the gap between the electrode fingers is denoted by b, the metallization ratio, a/(a+b), is in the range of about 0.55 to about 0.85 and the interdigital electrode transducer is overlapping-length weighted.

    摘要翻译: 单端口声表面波谐振器包括旋转的Y切割LiTaO 3衬底,设置在LiT 3 O 3衬底上的叉指式电极换能器和设置在LiTaO 3衬底两侧的反射器 叉指电极换能器在叉指电极传感器的表面声波传播方向。 当叉指电极换能器的电极指宽度用a表示,电极指之间的间隙用b表示时,金属化比率a /(a + b)在约0.55至约0.85的范围内, 叉指电极换能器重叠长度加权。

    Surface acoustic wave device having two piezoelectric substrates with different cut angles
    5.
    发明授权
    Surface acoustic wave device having two piezoelectric substrates with different cut angles 有权
    表面声波装置具有两个具有不同切角的压电基片

    公开(公告)号:US07212080B2

    公开(公告)日:2007-05-01

    申请号:US11531003

    申请日:2006-09-12

    IPC分类号: H03H9/72 H03H9/64

    摘要: A surface acoustic wave branching filter includes a first filter and a second filter each including a plurality of surface acoustic wave resonators arranged in a ladder circuit configuration. The first filter in which the frequency range of the passband is relatively low is provided on a first piezoelectric substrate, and the second filter in which the frequency range of the passband is relatively high is provided on a second piezoelectric substrate. The first piezoelectric substrate and the second piezoelectric substrate are rotation Y-cut X-propagation LiTaO3 substrates, and the cut angle of the first piezoelectric substrate is greater than the cut angle of the second piezoelectric substrate.

    摘要翻译: 表面声波分波器包括第一滤波器和第二滤波器,每个滤波器包括以梯形电路配置布置的多个表面声波谐振器。 在第一压电基板上设置有通带的频率范围相对较低的第一滤波器,在第二压电基板上设置通带频率相对较高的第二滤波器。 第一压电基板和第二压电基板是旋转Y切X传播LiTaO 3 3衬底,第一压电基片的切割角大于第二压电基片的切割角。

    ELASTIC WAVE BRANCHING FILTER
    6.
    发明申请
    ELASTIC WAVE BRANCHING FILTER 审中-公开
    弹性波分支滤波器

    公开(公告)号:US20110316647A1

    公开(公告)日:2011-12-29

    申请号:US13164789

    申请日:2011-06-21

    IPC分类号: H03H9/70 H03H9/72

    摘要: A reception filter includes a first and second longitudinally coupled resonator-type surface acoustic wave filter portions and a surface acoustic wave resonator. The first and second longitudinally coupled resonator-type surface acoustic wave filter portions each include at least three IDT electrodes. The surface acoustic wave resonator includes one IDT electrode connected to at least one of the at least three IDT electrodes. The reception filter is arranged such that a ratio of a capacitance of the surface acoustic wave resonator to a capacitance of each of the at least one of the at least three IDT electrodes included in the longitudinally coupled resonator-type surface acoustic wave filter portion, the at least one of the at least three IDT electrodes being electrically connected to the one IDT electrode of the surface acoustic wave resonator, is in the range of about 1.9 to about 2.5.

    摘要翻译: 接收滤波器包括第一和第二纵向耦合的谐振器型表面声波滤波器部分和表面声波谐振器。 第一和第二纵向耦合的谐振器型表面声波滤波器部分每个包括至少三个IDT电极。 表面声波谐振器包括连接到至少三个IDT电极中的至少一个的一个IDT电极。 接收滤波器被布置成使得表面声波谐振器的电容与包括在纵向耦合的谐振器型表面声波滤波器部分中的至少三个IDT电极中的至少一个的电容的比率, 所述至少三个IDT电极中的至少一个与所述表面声波谐振器的一个IDT电极电连接,在约1.9至约2.5的范围内。