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公开(公告)号：US4824539A
公开(公告)日：1989-04-25
申请号：US139823
申请日：1987-12-30
CPC分类号： G11B5/66 , G11B5/72 , Y10S428/90 , Y10T428/24967 , Y10T428/24975 , Y10T428/265
摘要： A Co-Cr perpendicular magnetic recording medium includes a chromium oxide film formed on a Co-Cr perpendicular magnetization film, and a SiO.sub.2 protective film formed on the chromium oxide film. The chromium oxide film is formed by conducting a heating treatment to the surface of the Co-Cr perpendicular magnetization film in an oxygen atmosphere of about 10 .sup.-4 to 10.sup.-3 Torr, at a temperature of about 300.degree. C. to 400.degree. C. for about two hours. The chromium oxide film has a thickness of about 20 to 200 .ANG.. The SiO.sub.2 protective film has a thickness greater than 50 .ANG., but the total thickness of the chromium oxide film and the SiO.sub.2 protective film is selected between 70 and 300 .ANG..
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公开(公告)号：US4725482A
公开(公告)日：1988-02-16
申请号：US685838
申请日：1984-12-24
CPC分类号： G11B5/66 , G11B5/72 , Y10S428/90 , Y10T428/24967 , Y10T428/24975 , Y10T428/265
摘要： A Co-Cr perpendicular magnetic recording medium includes a chromium oxide film formed on a Co-Cr perpendicular magnetization film, and a SiO.sub.2 protective film formed on the chromium oxide film. The chromium oxide film is formed by conducting a heating treatment to the surface of the Co-Cr perpendicular magnetization film in an oxygen atmosphere of about 10.sup.-4 to 10.sup.-3 Torr, at a temperature of about 300.degree. C. to 400.degree. C. for about two hours. The chromium oxide film has a thickness of about 20 to 200 .ANG.. The SiO.sub.2 protective film has a thickness greater than 50 .ANG., but the total thickness of the chromium oxide film and the SiO.sub.2 protective film is selected between 70 and 300 .ANG..
摘要翻译： Co-Cr垂直磁记录介质包括形成在Co-Cr垂直磁化膜上的氧化铬膜和形成在氧化铬膜上的SiO 2保护膜。 氧化铬膜通过在约10-4〜10-3乇的氧气氛中在约300℃〜400℃的温度下对Co-Cr垂直磁化膜的表面进行加热处理而形成 约两个小时。 氧化铬膜的厚度为约20至200安培。 SiO 2保护膜的厚度大于50，氧化铬膜和SiO 2保护膜的总厚度选择在70和300之间。
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公开(公告)号：US5393986A
公开(公告)日：1995-02-28
申请号：US942663
申请日：1992-09-09
IPC分类号： C23C14/48 , C23C14/54 , H01J37/05 , H01J37/244 , H01J37/317 , H01L21/265
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/24485 , H01J2237/2449 , H01J2237/24507 , H01J2237/24585
摘要： An ion implantation apparatus having a plasma source for generating ions, an ion accelerator for accelerating the generated ions, and a substrate holder provided on a position which the accelerated ions irradiate, wherein a current density of a desired kind of ions is measured by an electromagnetic ion energy analyzer having an electric field and a magnetic field, thereby controlling a dose of the ions.
摘要翻译： 具有用于产生离子的等离子体源的离子注入装置，用于加速产生的离子的离子加速器以及设置在加速离子照射的位置上的基板保持器，其中通过电磁测量所需种类的离子的电流密度 离子能量分析仪具有电场和磁场，从而控制离子的剂量。
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公开(公告)号：US5120667A
公开(公告)日：1992-06-09
申请号：US778750
申请日：1991-10-18
申请人： Keiji Tarui , Tatsuo Morita , Shuhei Tsuchimoto
发明人： Keiji Tarui , Tatsuo Morita , Shuhei Tsuchimoto
IPC分类号： H01L21/3213 , H01L21/336 , H01L21/77 , H01L21/84
CPC分类号： H01L29/66757 , H01L21/32137 , H01L27/1214
摘要： A TFTs fabricating process practicable at a low temperature, which includes the steps of forming a multi-layer body on a substrate, the multi-layer body including a semiconductor layer, a gate insulating layer and a lower thin layer, patterning the multi-layer body into islands, thereby removing the other portions of the multi-layer body, forming an insulating layer on the sides of the island-patterned multi-layered portion by etching at a selective ratio between the constituents of the insulating layer and the lower thin layer, forming an upper thin layer, and etching the upper and lower thin layers into upper and lower gate electrodes by use of one resist pattern.
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公开(公告)号：US4939591A
公开(公告)日：1990-07-03
申请号：US209882
申请日：1988-06-22
IPC分类号： H04N1/028 , H01L27/146 , H04N1/031
CPC分类号： H04N1/0312 , H04N1/0311 , H04N1/0316
摘要： A contact-type image sensor comprising a light source that illuminates the manuscript to be read; photodetectors that convert the light reflected by the manuscript into an electrical signal; a substrate that is disposed between the photodetectors and the manuscript, a bundle of optical fibers being buried in the substrate; and wiring electrodes that are disposed on the top surface of the substrate corresponding to the light-emitting face of the bundle of optical fibers and that are disposed on the light-receiving surfaces of the photodetectors, wherein the photodetectors are disposed in such a manner that the light-receiving surfaces of the photodetectors face the light-emitting face of the bundle of optical fibers, the wiring electrodes disposed on the photodetectors being electrically bonded to the wiring electrodes disposed on the substrate.
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6.发明授权
公开(公告)号：US4908457A
公开(公告)日：1990-03-13
申请号：US280972
申请日：1988-12-07
IPC分类号： C07D487/22 , C09B57/12 , G03G5/06
CPC分类号： C07D487/22 , C09B57/12 , G03G5/0659
摘要： 1,2,4,5-benzoylenebis(anthraquinone[1,2-d]imidazole) compounds represented by following general formula (1) or ##STR1## wherein R and R' each are hydrogen atom, a halogen atom, hydroxyl group, a lower alkyl group, a lower alkoxy group or an aryl group which may be substituted and m and n each are an integer of 1 or 2, and photosensitive members for electrophotography having a photosensitive layer containing them.
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公开(公告)号：US06916693B2
公开(公告)日：2005-07-12
申请号：US09799373
申请日：2001-03-05
CPC分类号： H01L21/02488 , H01L21/02422 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L21/02691 , H01L27/12 , H01L27/1277 , H01L29/04
摘要： In a crystallization process of an amorphous semiconductor film, a first crystalline semiconductor film having crystalline regions, and dotted with amorphous regions within the crystalline regions, is obtained by performing heat treatment processing after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. The amorphous regions are kept within a predetermined range by regulating the heat treatment conditions at this point. Laser annealing is performed on the first crystalline semiconductor film, to form a second crystalline semiconductor film. Electrical characteristics for a TFT manufactured based on the second crystalline semiconductor film can be obtained having less dispersion.
摘要翻译： 在非晶半导体膜的结晶工艺中，通过在将非晶半导体膜上促进结晶的金属元素引入导入之后，通过进行热处理来获得具有结晶区域并且在结晶区域内具有非晶区域的第一晶体半导体膜。 通过调节此时的热处理条件，将非晶区域保持在预定范围内。 对第一结晶半导体膜进行激光退火，形成第二结晶半导体膜。 可以获得具有较少分散性的基于第二结晶半导体膜制造的TFT的电特性。
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公开(公告)号：US5585817A
公开(公告)日：1996-12-17
申请号：US63951
申请日：1993-05-20
申请人： Masataka Itoh , Tatsuo Morita , Shuhei Tsuchimoto
发明人： Masataka Itoh , Tatsuo Morita , Shuhei Tsuchimoto
IPC分类号： G02F1/133 , G02F1/135 , G09G3/36 , H01L27/146 , H04N1/028
CPC分类号： H04N1/02805 , G02F1/1354 , H04N1/028
摘要： A device and a method for inputting/outputting an image are disclosed. The device includes: an image display section which selectively transmits light; and an image input section having a photodetective portion for converting part of the light which has been transmitted through the image display section and reflected from an original surface to be imaged, into an electric signal. The method is performed by using the device.
摘要翻译： 公开了一种用于输入/输出图像的装置和方法。 该装置包括：选择性地透射光的图像显示部; 以及图像输入部分，具有用于将已经透过图像显示部分并被从要成像的原始表面反射的部分光转换为电信号的光电检测部分。 该方法通过使用该装置来执行。
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9.发明授权Superconductive apparatus having a superconductive device in a airtight package 失效在超级包装中具有超导装置的超级装置
公开(公告)号：US5130691A
公开(公告)日：1992-07-14
申请号：US416417
申请日：1989-10-03
IPC分类号： H01L39/00 , G01R33/035 , H01L39/04 , H01L39/14 , H01L39/24
CPC分类号： G01R33/0352 , H01L39/04 , H01L39/143 , H01L39/2445 , Y10S505/881
摘要： A superconductive apparatus has a superconductive device such as a superconductive magneto-resistive device. The superconductive device is mounted within an airtight package which is sealed to create an airtight state. Before sealing, the airtight package is evacuated to replace the internal air thereof with an inert gas.
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10.发明授权
公开(公告)号：US5126667A
公开(公告)日：1992-06-30
申请号：US289312
申请日：1988-12-23
申请人： Shoei Kataoka , Hideo Nojima , Shuhei Tsuchimoto , Ryusuke Kita , Susumu Saitoh
发明人： Shoei Kataoka , Hideo Nojima , Shuhei Tsuchimoto , Ryusuke Kita , Susumu Saitoh
IPC分类号： G01R33/035
CPC分类号： G01R33/0352 , Y10S505/845
摘要： A superconductive magneto-resistive device for use in a sensor system for sensing an external magnetic field which is formed so as to have a predetermined pattern for a current path through which a supplied current flows. The pattern includes portions formed close and parallel to each other so that magnetic fields induced by respective currents flowing through the portions can be cancelled with each other.
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