公开(公告)号：US06809359B2

公开(公告)日：2004-10-26

申请号：US10147343

申请日：2002-05-16

申请人： Tooru Yamada

发明人： Tooru Yamada

IPC分类号： H01L31062

CPC分类号： H01L31/113

摘要： In a solid-state imaging device in which a N-type photoelectric conversion region is formed in a P−-type well region, a light-blocking film and a transparent conductive film are formed on the N-type photoelectric conversion region with a second interlayer insulation film interposed therebetween. By applying a negative voltage to the light-blocking film and the transparent conductive film, a P++-type inversion region is formed in a topmost part of the N-type photoelectric conversion region.

摘要翻译： 在P型阱区中形成N型光电转换区域的固态成像器件中，在N型光电转换区域上形成有遮光膜和透明导电膜， 介于其间的第二层间绝缘膜。 通过向遮光膜和透明导电膜施加负电压，在N型光电转换区域的最上部形成有P ++类型的反转区域。

公开(公告)号：US4813888A

公开(公告)日：1989-03-21

申请号：US101505

申请日：1987-09-28

申请人： Toshiaki Tokizane ,  Hideo Hayashi ,  Takayuki Iseki ,  Ikuhisa Morimoto ,  Tooru Yamada

发明人： Toshiaki Tokizane ,  Hideo Hayashi ,  Takayuki Iseki ,  Ikuhisa Morimoto ,  Tooru Yamada

IPC分类号： H01R13/646 ,  H01R17/18

CPC分类号： H01R24/525 ,  H01R2105/00

摘要： A high-frequency cable connector for relaying coaxial cables led from two different sides to each other comprises a case body having a receptacle for a terminal plug of one of the cables, a holder for holding an inner contactor for contacting therewith the inner conductor of a cable within the case body, a conducting shield plate secured to the bottom of the case body while exposing part of the holder to the exterior, and a cap plate rotatably mounted to the shield plate and holding the other coaxial cable. The connector allows the two coaxial cables to be connected in an extremely simpler manner, the connector itself can be installed along with any other type or same type of wiring devices, and respective components can be assembled in a single direction so as to render efficient its mass production.

摘要翻译： 用于将从两个不同侧引导的同轴电缆用于中继的高频电缆连接器彼此包括壳体，其具有用于电缆之一的端子插头的插座，用于保持内接触器以与其接触的内导体的保持器 电缆，壳体内的导电屏蔽板，固定在壳体的底部，同时将保持器的一部分暴露于外部;以及盖板，其可旋转地安装到屏蔽板并保持另一同轴电缆。 连接器允许两个同轴电缆以非常简单的方式连接，连接器本身可以与任何其他类型或相同类型的布线装置一起安装，并且相应的部件可以在单个方向上组装，以便使其有效地 大量生产。

公开(公告)号：US07138671B2

公开(公告)日：2006-11-21

申请号：US11137414

申请日：2005-05-26

申请人： Jun Hirai ,  Tooru Yamada

发明人： Jun Hirai ,  Tooru Yamada

IPC分类号： H01L27/148

CPC分类号： H01L27/14806

摘要： A first p+-type region on a surface of a photodiode unit is formed over a region from a surface of the photodiode unit through a surface of a signal charge read-out unit until reaching the charge transfer unit. Also, the following structure is adapted: the structure in which a boundary between the first p+-type region and a p++-type region is not on a same plane with a boundary of an n-type impurity region which forms the photodiode unit on a side of the signal charge read-out unit. Further, a second p+-type region is formed between the first p+-type region and the p++-type region on the surface of the photodiode unit. The second p+-type region has an impurity concentration between the impurity concentrations of the first p+-type region and the p++-type region.

摘要翻译： 光电二极管单元的表面上的第一p + SUP +型区域形成在从光电二极管单元的表面通过信号电荷读出单元的表面的区域上，直至到达电荷转移单元 。 另外，适用以下结构：其中第一p + SUP区域与p ++ ++区域之间的边界不在同一平面上的结构，具有 在信号电荷读出单元的一侧形成光电二极管单元的n型杂质区域的边界。 此外，在第一p + + / - 型区域和p +++区域之间形成第二p + 光电二极管单元的表面。 第二p + + / - 型区域具有在第一p + + / - 型区域的杂质浓度和p + 类型区域。

公开(公告)号：US20060076587A1

公开(公告)日：2006-04-13

申请号：US11137414

申请日：2005-05-26

申请人： Jun Hirai ,  Tooru Yamada

发明人： Jun Hirai ,  Tooru Yamada

IPC分类号： H01L31/0328

CPC分类号： H01L27/14806

摘要： A p+-type region 5 on a surface of a photodiode unit is formed over a region from a surface of the photodiode unit through a surface of a signal charge read-out unit 9 until reaching the charge transfer unit. Also, the following structure is adapted: the structure in which a boundary between the p+-type region 5 and the p++-type region 4 is not on a same plane with a boundary of an n-type impurity region which forms the photodiode unit on a side of the signal charge read-out unit. Further, a p+-type region 12 is formed between the p+-type region 5 and the p++-type region 4 on the surface of the photodiode unit. The p+-type region 12 has an impurity concentration between the impurity concentrations of the p+-type region 5 and the p++-type region 4.

摘要翻译： 在光电二极管单元的表面上的区域上形成由信号电荷读出单元9的表面直到达到电荷转移的区域上的p + 单元。 另外，适用以下结构：其中p + + + / - 型区域5和p ++ ++区域4之间的边界不是相同的结构 平面，其在信号电荷读出单元的一侧上形成光电二极管单元的n型杂质区域的边界。 此外，在p + + / - 型区域5和p +++区域4之间形成ap + 光电二极管单元的表面。 p + + +型区域12具有在p + + / - 型区域5的杂质浓度和p + 类型区域4。

公开(公告)号：US4989065A

公开(公告)日：1991-01-29

申请号：US365521

申请日：1989-06-13

申请人： Junichi Tsuchimoto ,  Tooru Yamada ,  Takaya Miyano

发明人： Junichi Tsuchimoto ,  Tooru Yamada ,  Takaya Miyano

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L29/45

CPC分类号： H01L21/28575 ,  H01L29/452 ,  Y10S148/056 ,  Y10S148/058

摘要： This invention comprises a Pd layer formed on an n-type GaAs semiconductor crystals, and a Ge layer being formed on the Pd layer, characterized in that the thickness of the Pd layer is between 300 .ANG. and 1500 .ANG. and the thickness of the Ge layer is between 500 .ANG. and 1500 .ANG..And this invention provides an ohmic electrode forming process for compound semiconductor crystals for forming an ohmic electrode on n-type GaAs semiconductor crystals, comprising a first layer forming step for forming a palladium (Pd) layer on a compound semiconductor crystal; a second layer forming step for forming a germanium layer (Ge) on the Pd layer; and a annealing step for annealing the Pd layer and the Ge layer by a rapid thermal annealing treatment.The Pd layer is formed between 300 .ANG. and 1500 .ANG. in the first layer forming step; the Ge layer is between 500 .ANG. and 1500 .ANG. in the second layer forming step; and the Pd layer and the Ge layer are heated in the annealing step for 3 seconds to 20 seconds at a temperature of 500.degree. C. to 650.degree. C. by a rapid thermal annealing treatment. As the rapid thermal annealing treatment, the flash annealing treatment is effective.

公开(公告)号：US20060221219A1

公开(公告)日：2006-10-05

申请号：US11387571

申请日：2006-03-23

申请人： Tooru Yamada

发明人： Tooru Yamada

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H01L27/14685 ,  H01L27/14812 ,  H01L27/14818 ,  H01L27/14843

摘要： In a solid-state imaging device including a semiconductor substrate in which photoelectric conversion parts 11a, vertical CCDs 2, and a vertical bus line part 16 are provided, the vertical CCDs 2 are provided with transfer channels 2a, first vertical transfer electrodes 6, second vertical transfer electrodes 9, and shielding films 13. The first transfer electrodes 6 and the second transfer electrodes 9 are arranged so that, in regions where the transfer channels 2a are not formed, the second transfer electrodes 9 are positioned above the first transfer electrodes 6, while in regions where the transfer channels 2a are formed, the first and second transfer electrodes 6 and 9 are arranged so as to be adjoined to each other, and portions of the second transfer electrodes 9 in the regions where the transfer channels 2a are formed do not overlap the first transfer electrodes 9 in the thickness direction of the semiconductor substrate.

摘要翻译： 在包括设置有光电转换部分11a，垂直CCD2和垂直总线部分16的半导体衬底的固态成像装置中，垂直CCD 2设置有传送通道2a，第一垂直传送电极6 ，第二垂直转印电极9和屏蔽膜13。 第一传输电极6和第二传输电极9被布置成使得在不形成传输通道2a的区域中，第二传输电极9位于第一传输电极6的上方，而在传输通道2 a，第一和第二转印电极6和9被布置成彼此相邻，并且在形成转印通道2a的区域中的第二转印电极9的部分不与第一转印电极重叠 9在半导体衬底的厚度方向上。

公开(公告)号：US06846695B2

公开(公告)日：2005-01-25

申请号：US10377314

申请日：2003-02-27

申请人： Tooru Yamada

发明人： Tooru Yamada

IPC分类号： H01L21/00 ,  H01L21/339 ,  H01L27/146 ,  H01L27/148 ,  H01L29/762 ,  H01L29/768 ,  H04N5/30

CPC分类号： H01L27/14812 ,  H01L27/14689 ,  H01L27/14843

摘要： A solid-state imaging device of the present invention includes a vertical charge transfer portion and a horizontal charge transfer portion that is connected to at least one end of the vertical charge transfer portion. The vertical charge transfer portion includes a vertical transfer channel region and a plurality of vertical transfer electrodes formed on the vertical transfer channel region. The horizontal charge transfer portion includes a horizontal transfer channel region, a plurality of first horizontal transfer electrodes formed on the horizontal transfer channel region, and a plurality of second horizontal transfer electrodes arranged between the plurality of first horizontal transfer electrodes. A potential below the first horizontal transfer electrode is higher than a potential below the second horizontal transfer electrode that is arranged adjacent to the first horizontal transfer electrode and backward along a transfer direction with respect to the first horizontal transfer electrode. In the solid-state imaging device of the present invention, in a connection portion of the vertical charge transfer portion and the horizontal charge transfer portion, a distance between a final vertical transfer electrode arranged at a terminating end of the vertical charge transfer portion and the first horizontal transfer electrode in the horizontal charge transfer portion is equal to or smaller than a distance between the first horizontal transfer electrodes in the horizontal charge transfer portion.

摘要翻译： 本发明的固态成像装置包括连接到垂直电荷转移部分的至少一端的垂直电荷转移部分和水平电荷转移部分。 垂直电荷转移部分包括形成在垂直传输沟道区上的垂直传输沟道区和多个垂直传输电极。 水平电荷转移部分包括水平传输沟道区域，形成在水平传输沟道区域上的多个第一水平传输电极和布置在多个第一水平传输电极之间的多个第二水平传输电极。 第一水平传送电极之下的电位比第二水平传输电极下方的电位高，其相对于第一水平传送电极沿着传送方向相反地布置。 在本发明的固态成像装置中，在垂直电荷转移部分和水平电荷转移部分的连接部分中，布置在垂直电荷转移部分的终止端的最终垂直转移电极与 水平电荷转移部分中的第一水平转印电极等于或小于水平电荷转移部分中的第一水平转印电极之间的距离。

公开(公告)号：US08372304B2

公开(公告)日：2013-02-12

申请号：US12457373

申请日：2009-06-09

申请人： Tooru Yamada ,  Tetsuya Kamimura

发明人： Tooru Yamada ,  Tetsuya Kamimura

IPC分类号： C09K13/00 ,  H01L21/44

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A polishing slurry used in chemical mechanical polishing of a barrier layer and an interlayer dielectric film in a semiconductor integrated circuit includes an abrasive, an oxidizer, an anticorrosive, an acid, a surfactant and an inclusion compound. The polishing slurry has a pH of less than 5. The resulting polishing slurry contains a solid abrasive used in barrier CMP for polishing a barrier layer made of a metallic barrier material, has excellent storage stability, achieves a good polishing rate in various films to be polished such as the barrier layer, and is capable of independently controlling the polishing rate with respect to the various films to be polished while further suppressing agglomeration of the abrasive particles.

公开(公告)号：US20100072418A1

公开(公告)日：2010-03-25

申请号：US12585033

申请日：2009-09-01

申请人： Atsushi Mizutani ,  Tooru Yamada

发明人： Atsushi Mizutani ,  Tooru Yamada

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1472 ,  H01L21/31053 ,  H01L21/3212

摘要： A polishing slurry used for chemical mechanical polishing of a barrier layer and an interlayer dielectric film in manufacturing a semiconductor integrated circuit includes two colloidal silicas which have association degrees differing from each other by at least 0.5 and primary particle sizes differing from each other by 5.0 nm or less, an anticorrosive, and an oxidizer. The polishing slurry is used in the barrier metal CMP and is capable of achieving a good polishing rate on the interlayer dielectric film while simultaneously reducing scratching which is a defect on the polished surface.

摘要翻译： 在制造半导体集成电路中用于阻挡层和层间电介质膜的化学机械抛光的抛光浆料包括两个胶体二氧化硅，它们的相互关系度彼此不同至少为0.5，一次粒径彼此相差5.0nm 或更少，防腐剂和氧化剂。 抛光浆料用于阻挡金属CMP中，能够在层间绝缘膜上达到良好的抛光速率，同时减少作为抛光表面缺陷的划痕。

公开(公告)号：US20090311864A1

公开(公告)日：2009-12-17

申请号：US12457373

申请日：2009-06-09

申请人： Tooru Yamada ,  Tetsuya Kamimura

发明人： Tooru Yamada ,  Tetsuya Kamimura

IPC分类号： H01L21/463 ,  H01L21/465 ,  C09K13/00

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A polishing slurry used in chemical mechanical polishing of a barrier layer and an interlayer dielectric film in a semiconductor integrated circuit includes an abrasive, an oxidizer, an anticorrosive, an acid, a surfactant and an inclusion compound. The polishing slurry has a pH of less than 5. The resulting polishing slurry contains a solid abrasive used in barrier CMP for polishing a barrier layer made of a metallic barrier material, has excellent storage stability, achieves a good polishing rate in various films to be polished such as the barrier layer, and is capable of independently controlling the polishing rate with respect to the various films to be polished while further suppressing agglomeration of the abrasive particles.

摘要翻译： 在半导体集成电路中用于阻挡层和层间绝缘膜的化学机械抛光中的研磨浆料包括研磨剂，氧化剂，防腐蚀剂，酸，表面活性剂和包合物。 抛光浆料的pH值小于5.所得的抛光浆料含有用于抛光由金属阻隔材料制成的阻挡层的阻挡层CMP的固体磨料，具有优异的储存稳定性，在各种膜中达到良好的抛光速率 抛光如阻挡层，并且能够独立地控制相对于待研磨的各种膜的抛光速率，同时进一步抑制磨料颗粒的团聚。