Czochralski crystal growth process furnace that maintains constant melt line orientation and method of operation
    1.
    发明授权
    Czochralski crystal growth process furnace that maintains constant melt line orientation and method of operation 有权
    Czochralski晶体生长工艺炉保持恒定的熔体线取向和操作方法

    公开(公告)号:US08721786B2

    公开(公告)日:2014-05-13

    申请号:US12877140

    申请日:2010-09-08

    IPC分类号: C30B15/26

    CPC分类号: C30B15/30 C30B15/20

    摘要: A Czochralski process (“CZ”) crystal growth method and furnace having a heater capable of generating a heating zone, a crucible within the heating zone and capable of retaining a volume of molten crystal growth material forming a melt line oriented in a designated position within the heating zone, a seed growth rod retractable from the crucible with a rod retraction mechanism, for forming a crystal boule thereon proximal the melt line from the molten crystal growth material. The furnace causes relative movement between the crucible and heating zone as the crystal boule is retracted, so that the melt line is maintained in the designated position within the heating zone. In some embodiments relative movement is based at least in part on sensed weight of the growing crystal boule. In other embodiments the crucible growth rod retraction mechanism are fixed relative to each other by a gantry.

    摘要翻译: Czochralski工艺(“CZ”)晶体生长方法和具有能够产生加热区域的加热器的炉子,在加热区内的坩埚,并且能够保持一定量的熔融晶体生长材料, 所述加热区域是从所述坩埚收回的具有杆缩回机构的种子生长棒,用于在熔融线上从所述熔融晶体生长材料形成晶体棒。 当晶体晶棒缩回时,炉引起坩埚和加热区之间的相对运动,使得熔体线保持在加热区内的指定位置。 在一些实施例中,相对运动至少部分地基于生长的晶体晶粒的感测重量。 在其他实施例中,坩埚生长杆回缩机构通过台架相对于彼此固定。

    Method for fabrication of a detector component using laser technology
    2.
    发明授权
    Method for fabrication of a detector component using laser technology 有权
    使用激光技术制造检测器部件的方法

    公开(公告)号:US08470214B2

    公开(公告)日:2013-06-25

    申请号:US10856225

    申请日:2004-05-28

    IPC分类号: B29D11/00

    摘要: A method for fabricating a detector or light guide using laser technology. The method yields a detector component such as a scintillator, light guide or optical sensor which provides for the internal manipulation of light waves via the strategic formation of micro-voids to enhance control and collection of scintillation light, allowing for accurate decoding of the impinging radiation. The method uses laser technology to create micro-voids within a target media to optically segment the media. The micro-voids are positioned to define optical boundaries of the optically-segmented portions forming virtual resolution elements within the scintillator. Each micro-void is formed at its selected location using a laser source. The laser source generates and focuses a beam of light into the target media sequentially to form the micro-voids. The laser beam ablates the media at the focal point, thereby yielding the micro-void.

    摘要翻译: 一种使用激光技术制造检测器或导光体的方法。 该方法产生诸如闪烁体,光导或光学传感器的检测器组件,其通过微空隙的战略形成提供对光波的内部操纵,以增强闪烁光的控制和收集,允许对入射辐射的精确解码 。 该方法使用激光技术在目标介质内产生微孔,以光学分段介质。 微孔被定位以限定在闪烁体内形成虚拟分辨元件的光学分割部分的光学边界。 使用激光源在其选定位置形成每个微孔。 激光源产生并将光束聚焦到目标介质中以形成微空隙。 激光束在焦点处消融介质,从而产生微孔。

    Method and apparatus for continuous crystal growth
    3.
    发明授权
    Method and apparatus for continuous crystal growth 有权
    连续晶体生长的方法和装置

    公开(公告)号:US08784559B2

    公开(公告)日:2014-07-22

    申请号:US12878326

    申请日:2010-09-09

    IPC分类号: C30B15/02

    摘要: A Czochralski (“CZ”) single-crystal growth process system continuously grows crystal boules in a chamber furnace during a single thermal cycle. Finished boules are transferred from the furnace chamber, without need to cool the furnace, to an adjoining cooling chamber for controlled cooling. Controlled cooling is preferably accomplished by transporting boules along a path having an incrementally decreasing temperature. In order to maximize crystal boule yield in a single furnace thermal cycle, the crucible assembly may be recharged with crystal growth aggregate and/or slag may be discharged during the crystal boule growth process without opening the furnace.

    摘要翻译: Czochralski(“CZ”)单晶生长工艺系统在单个热循环期间在室内炉中连续生长晶体。 成品坯料从炉室转移,而不需要将炉子冷却到相邻的冷却室中以进行受控冷却。 控制冷却优选通过沿着具有逐渐降低的温度的路径输送颗粒来实现。 为了使单炉炉热循环中的晶体坯产量最大化,坩埚组件可以用晶体生长骨料再充电,和/或可在晶体生长过程中排出炉渣,而不打开炉子。

    Method and apparatus for continuous crystal growth
    4.
    发明申请
    Method and apparatus for continuous crystal growth 有权
    连续晶体生长的方法和装置

    公开(公告)号:US20120060748A1

    公开(公告)日:2012-03-15

    申请号:US12878326

    申请日:2010-09-09

    IPC分类号: C30B15/30 C30B15/00

    摘要: A Czochralski (“CZ”) single-crystal growth process system continuously grows crystal boules in a chamber furnace during a single thermal cycle. Finished boules are transferred from the furnace chamber, without need to cool the furnace, to an adjoining cooling chamber for controlled cooling. Controlled cooling is preferably accomplished by transporting boules along a path having an incrementally decreasing temperature. In order to maximize crystal boule yield in a single furnace thermal cycle, the crucible assembly may be recharged with crystal growth aggregate and/or slag may be discharged during the crystal boule growth process without opening the furnace.

    摘要翻译: Czochralski(“CZ”)单晶生长工艺系统在单个热循环期间在室内炉中连续生长晶体。 成品坯料从炉室转移,而不需要将炉子冷却到相邻的冷却室中以进行受控冷却。 控制冷却优选通过沿着具有逐渐降低的温度的路径输送颗粒来实现。 为了使单炉炉热循环中的晶体坯产量最大化,坩埚组件可以用晶体生长骨料再充电,和/或可在晶体生长过程中排出炉渣,而不打开炉子。

    CZOCHRALSKI CRYSTAL GROWTH PROCESS FURNACE THAT MAINTAINS CONSTANT MELT LINE ORIENTATION AND METHOD OF OPERATION
    5.
    发明申请
    CZOCHRALSKI CRYSTAL GROWTH PROCESS FURNACE THAT MAINTAINS CONSTANT MELT LINE ORIENTATION AND METHOD OF OPERATION 有权
    CZOCHRALSKI晶体生长过程保持恒定的熔体线定向和操作方法

    公开(公告)号:US20120055395A1

    公开(公告)日:2012-03-08

    申请号:US12877140

    申请日:2010-09-08

    IPC分类号: C30B15/30 C30B15/20

    CPC分类号: C30B15/30 C30B15/20

    摘要: A Czochralski process (“CZ”) crystal growth method and furnace having a heater capable of generating a heating zone, a crucible within the heating zone and capable of retaining a volume of molten crystal growth material forming a melt line oriented in a designated position within the heating zone, a seed growth rod retractable from the crucible with a rod retraction mechanism, for forming a crystal boule thereon proximal the melt line from the molten crystal growth material. The furnace causes relative movement between the crucible and heating zone as the crystal boule is retracted, so that the melt line is maintained in the designated position within the heating zone. In some embodiments relative movement is based at least in part on sensed weight of the growing crystal boule. In other embodiments the crucible growth rod retraction mechanism are fixed relative to each other by a gantry.

    摘要翻译: Czochralski工艺(“CZ”)晶体生长方法和具有能够产生加热区的加热器的炉子,在加热区内的坩埚,并且能够保持一定量的熔融晶体生长材料, 所述加热区域是从所述坩埚收回的具有杆缩回机构的种子生长棒,用于在熔融线上从所述熔融晶体生长材料形成晶体棒。 当晶体晶棒缩回时,炉引起坩埚和加热区之间的相对运动,使得熔体线保持在加热区内的指定位置。 在一些实施例中,相对运动至少部分地基于生长的晶体晶粒的感测重量。 在其他实施例中,坩埚生长杆回缩机构通过台架相对于彼此固定。

    Composite Crucible For Crystal Growth
    8.
    发明申请
    Composite Crucible For Crystal Growth 审中-公开
    复合坩埚用于晶体生长

    公开(公告)号:US20130087094A1

    公开(公告)日:2013-04-11

    申请号:US13305803

    申请日:2011-11-29

    IPC分类号: C30B15/10 B23K31/02

    摘要: A composite crucible comprising an iridium alloy sidewall and an iridium bottom. The iridium alloy is selected from the group consisting of iridium, rhenium, rhodium and tungsten. In some embodiments the iridium alloy comprises about 99 to 95 parts iridium and about 1 to 5 five parts rhenium. The crucible can be fabricated by rolling a flat sheet of iridium alloy into a cylinder and affixing an iridium circular bottom to one end of the cylinder. Seams can be welded to complete the composite crucible structure.

    摘要翻译: 一种复合坩埚,包括铱合金侧壁和铱底。 铱合金选自铱,铼,铑和钨。 在一些实施方案中,铱合金包含约99至95份铱和约1至5份五份铼。 坩埚可以通过将铱合金的平板轧制成圆筒并将铱圆形底部固定到圆筒的一端来制造。 可以焊接接缝以完成复合坩埚结构。