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公开(公告)号：US20120060748A1
公开(公告)日：2012-03-15
申请号：US12878326
申请日：2010-09-09
CPC分类号： C30B15/12 , C30B15/02 , C30B33/02 , C30B35/005
摘要： A Czochralski (“CZ”) single-crystal growth process system continuously grows crystal boules in a chamber furnace during a single thermal cycle. Finished boules are transferred from the furnace chamber, without need to cool the furnace, to an adjoining cooling chamber for controlled cooling. Controlled cooling is preferably accomplished by transporting boules along a path having an incrementally decreasing temperature. In order to maximize crystal boule yield in a single furnace thermal cycle, the crucible assembly may be recharged with crystal growth aggregate and/or slag may be discharged during the crystal boule growth process without opening the furnace.
摘要翻译： Czochralski（“CZ”）单晶生长工艺系统在单个热循环期间在室内炉中连续生长晶体。 成品坯料从炉室转移，而不需要将炉子冷却到相邻的冷却室中以进行受控冷却。 控制冷却优选通过沿着具有逐渐降低的温度的路径输送颗粒来实现。 为了使单炉炉热循环中的晶体坯产量最大化，坩埚组件可以用晶体生长骨料再充电，和/或可在晶体生长过程中排出炉渣，而不打开炉子。
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公开(公告)号：US08784559B2
公开(公告)日：2014-07-22
申请号：US12878326
申请日：2010-09-09
IPC分类号： C30B15/02
CPC分类号： C30B15/12 , C30B15/02 , C30B33/02 , C30B35/005
摘要： A Czochralski (“CZ”) single-crystal growth process system continuously grows crystal boules in a chamber furnace during a single thermal cycle. Finished boules are transferred from the furnace chamber, without need to cool the furnace, to an adjoining cooling chamber for controlled cooling. Controlled cooling is preferably accomplished by transporting boules along a path having an incrementally decreasing temperature. In order to maximize crystal boule yield in a single furnace thermal cycle, the crucible assembly may be recharged with crystal growth aggregate and/or slag may be discharged during the crystal boule growth process without opening the furnace.
摘要翻译： Czochralski（“CZ”）单晶生长工艺系统在单个热循环期间在室内炉中连续生长晶体。 成品坯料从炉室转移，而不需要将炉子冷却到相邻的冷却室中以进行受控冷却。 控制冷却优选通过沿着具有逐渐降低的温度的路径输送颗粒来实现。 为了使单炉炉热循环中的晶体坯产量最大化，坩埚组件可以用晶体生长骨料再充电，和/或可在晶体生长过程中排出炉渣，而不打开炉子。
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3.发明授权Czochralski crystal growth process furnace that maintains constant melt line orientation and method of operation 有权Czochralski晶体生长工艺炉保持恒定的熔体线取向和操作方法公开(公告)号：US08721786B2
公开(公告)日：2014-05-13
申请号：US12877140
申请日：2010-09-08
IPC分类号： C30B15/26
摘要： A Czochralski process (“CZ”) crystal growth method and furnace having a heater capable of generating a heating zone, a crucible within the heating zone and capable of retaining a volume of molten crystal growth material forming a melt line oriented in a designated position within the heating zone, a seed growth rod retractable from the crucible with a rod retraction mechanism, for forming a crystal boule thereon proximal the melt line from the molten crystal growth material. The furnace causes relative movement between the crucible and heating zone as the crystal boule is retracted, so that the melt line is maintained in the designated position within the heating zone. In some embodiments relative movement is based at least in part on sensed weight of the growing crystal boule. In other embodiments the crucible growth rod retraction mechanism are fixed relative to each other by a gantry.
摘要翻译： Czochralski工艺（“CZ”）晶体生长方法和具有能够产生加热区域的加热器的炉子，在加热区内的坩埚，并且能够保持一定量的熔融晶体生长材料， 所述加热区域是从所述坩埚收回的具有杆缩回机构的种子生长棒，用于在熔融线上从所述熔融晶体生长材料形成晶体棒。 当晶体晶棒缩回时，炉引起坩埚和加热区之间的相对运动，使得熔体线保持在加热区内的指定位置。 在一些实施例中，相对运动至少部分地基于生长的晶体晶粒的感测重量。 在其他实施例中，坩埚生长杆回缩机构通过台架相对于彼此固定。
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4.发明申请CZOCHRALSKI CRYSTAL GROWTH PROCESS FURNACE THAT MAINTAINS CONSTANT MELT LINE ORIENTATION AND METHOD OF OPERATION 有权CZOCHRALSKI晶体生长过程保持恒定的熔体线定向和操作方法公开(公告)号：US20120055395A1
公开(公告)日：2012-03-08
申请号：US12877140
申请日：2010-09-08
摘要： A Czochralski process (“CZ”) crystal growth method and furnace having a heater capable of generating a heating zone, a crucible within the heating zone and capable of retaining a volume of molten crystal growth material forming a melt line oriented in a designated position within the heating zone, a seed growth rod retractable from the crucible with a rod retraction mechanism, for forming a crystal boule thereon proximal the melt line from the molten crystal growth material. The furnace causes relative movement between the crucible and heating zone as the crystal boule is retracted, so that the melt line is maintained in the designated position within the heating zone. In some embodiments relative movement is based at least in part on sensed weight of the growing crystal boule. In other embodiments the crucible growth rod retraction mechanism are fixed relative to each other by a gantry.
摘要翻译： Czochralski工艺（“CZ”）晶体生长方法和具有能够产生加热区的加热器的炉子，在加热区内的坩埚，并且能够保持一定量的熔融晶体生长材料， 所述加热区域是从所述坩埚收回的具有杆缩回机构的种子生长棒，用于在熔融线上从所述熔融晶体生长材料形成晶体棒。 当晶体晶棒缩回时，炉引起坩埚和加热区之间的相对运动，使得熔体线保持在加热区内的指定位置。 在一些实施例中，相对运动至少部分地基于生长的晶体晶粒的感测重量。 在其他实施例中，坩埚生长杆回缩机构通过台架相对于彼此固定。
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5.发明授权公开(公告)号：US08278624B2
公开(公告)日：2012-10-02
申请号：US11842813
申请日：2007-08-21
CPC分类号： C09K11/7774 , C30B15/04 , C30B29/34
摘要： LSO scintillation crystals with improved scintillation and optical properties are achieved by controlled co-doping a LSO crystal melt with amounts of cerium and an additional codopant such as calcium or other divalent cations. Crystal growth atmosphere is optimized by controlling the amount of oxygen in the atmosphere. Zinc is added as an additional material to restabilize crystal growth where calcium co-dopant is added. The decay time of the scintillation crystal can be controlled by controlling the concentration of co-dopant added.
摘要翻译： 具有改善的闪烁和光学性质的LSO闪烁晶体通过用量的铈和另外的共掺杂剂例如钙或其它二价阳离子控制共掺杂LSO晶体熔体来实现。 通过控制大气中的氧气量来优化晶体生长气氛。 添加锌作为附加材料，以重新稳定晶体生长，其中加入钙共掺杂剂。 闪烁晶体的衰减时间可以通过控制添加的共掺杂剂的浓度来控制。
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公开(公告)号：US20140110588A1
公开(公告)日：2014-04-24
申请号：US13098654
申请日：2011-05-02
CPC分类号： C30B29/12 , C09K11/7733 , C30B11/003 , G01T1/20 , G01T1/202 , G01T3/06 , G21K4/00
摘要： The present disclosure discloses, in one arrangement, a single crystalline iodide scintillator material having a composition of the formula AM1-xEuxI3, A3M1-xEuxI5 and AM2(1-x)Eu2xI5, wherein A consists essentially of any alkali metal element (such as Li, Na K, Rb, Cs) or any combination thereof, M consists essentially of Sr, Ca, Ba or any combination thereof, and 0≦x≦1. In another arrangement, the above single crystalline iodide scintillator material can be made by first synthesizing a compound of the above composition and then forming a single crystal from the synthesized compound by, for example, the Vertical Gradient Freeze method. Applications of the iodide scintillator materials include radiation detectors and their use in medical and security imaging.
摘要翻译： 本公开在一种布置中公开了具有式AM1-xEuxI3，A3M1-xEuxI5和AM2（1-x）Eu2xI5组成的单结晶碘化物闪烁体材料，其中A基本上由任何碱金属元素（例如Li ，Na K，Rb，Cs）或其任何组合，M基本上由Sr，Ca，Ba或其任何组合组成，并且0和n 1; x和n 1; 在另一种布置中，上述单结晶碘化物闪烁体材料可以通过首先合成上述组成的化合物，然后通过例如垂直梯度冷冻法由合成的化合物形成单晶来制备。 碘化物闪烁体材料的应用包括辐射探测器及其在医疗和安全成像中的应用。
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7.发明授权Rare-earth oxyorthosilicate scintillator crystals and method of making rare-earth oxyorthosilicate scintillator crystals 有权稀土氧原硅酸盐闪烁体晶体及稀土氧原硅酸盐闪烁体晶体的制备方法公开(公告)号：US08062419B1
公开(公告)日：2011-11-22
申请号：US12967442
申请日：2010-12-14
IPC分类号： C30B29/22
摘要： A method of making LSO scintillators with high light yield and short decay times is disclosed. In one arrangement, the method includes codoping LSO with cerium and another dopant from the IIA or IIB group of the periodic table of elements. The doping levels are chosen to tune the decay time of scintillation pulse within a broader range (between about ˜30 ns up to about ˜50 ns) than reported in the literature, with improved light yield and uniformity. In another arrangement, relative concentrations of dopants are chosen to achieve the desired light yield and decay time while ensuring crystal growth stability.
摘要翻译： 公开了一种制造具有高光产量和短衰减时间的LSO闪烁体的方法。 在一种布置中，该方法包括与元素的周期表的IIA或IIB族的铈和另一种掺杂剂的LSO共掺杂。 选择掺杂水平来调节闪烁脉冲在比文献中报道的更宽范围（约〜30ns至约〜50ns）之间的衰减时间，具有改善的光产量和均匀性。 在另一种布置中，选择掺杂剂的相对浓度以获得期望的光产率和衰变时间，同时确保晶体生长稳定性。
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公开(公告)号：US20110272586A1
公开(公告)日：2011-11-10
申请号：US13098662
申请日：2011-05-02
CPC分类号： G21K4/00 , C09K11/7705 , C09K11/772 , C09K11/7773 , C30B11/00 , C30B29/12 , G21K2004/06
摘要： The present disclosure discloses, in one arrangement, a single crystalline chloride scintillator material having a composition of the formula A3MCl6, wherein A consists essentially of Li, Na K, Rb, Cs or any combination thereof, and M consists essentially of Ce, Sc, Y, La, Lu, Gd, Pr, Tb, Yb, Nd or any combination thereof. In another arrangement, a chloride scintillator material is single-crystalline and has a composition of the formula AM2Cl7, wherein A consists essentially of Li, Na K, Rb, Cs or any combination thereof, and M consists essentially of Ce, Sc, Y, La, Lu, Gd, Pr, Tb, Yb, Nd or any combination thereof. Specific examples of these scintillator materials include single-crystalline Cs3CeCl6, CsCe2Cl7, Ce-doped KGd2Cl7 (KGd2(1-x)Ce2xCl7) and Ce-doped CsGd2Cl7 (CsGd2(1-x)Ce2xCl7). In a further arrangement, the Bridgman method can be used to grown single crystals of the chloride scintillator materials compounds synthesized from starting chlorides.
摘要翻译： 本公开在一种布置中公开了具有式A3MCl6组成的单晶氯化物闪烁体材料，其中A主要由Li，NaK，Rb，Cs或其任何组合组成，M基本上由Ce，Sc， Y，La，Lu，Gd，Pr，Tb，Yb，Nd或其任何组合。 在另一种布置中，氯化物闪烁体材料是单晶的并且具有式AM2Cl7的组成，其中A基本上由Li，NaK，Rb，Cs或其任何组合组成，M基本上由Ce，Sc，Y， La，Lu，Gd，Pr，Tb，Yb，Nd或其任何组合。 这些闪烁体材料的具体实例包括单晶Cs3CeCl6，CsCe2Cl7，Ce掺杂的KGd2Cl7（KGd2（1-x）Ce2xCl7）和Ce掺杂的CsGd2Cl7（CsGd2（1-x）Ce2xCl7）。 在另一种布置中，Bridgman方法可用于生长由起始氯化物合成的氯化物闪烁体材料化合物的单晶。
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公开(公告)号：US20110272585A1
公开(公告)日：2011-11-10
申请号：US13098642
申请日：2011-05-02
CPC分类号： C09K11/772 , C30B11/00 , C30B29/12 , G21K4/00
摘要： A halide scintillator material is disclosed. The material is single-crystalline and has a composition of the formula A3MBr6(1-x)Cl6x (such as Cs3CeBr6(1-x)Cl6x) or AM2Br7(1-x)Cl7x (such as CsCe2Br7(1-x)Cl7x), 0≦x≦1, wherein A consists essentially of Li, Na K, Rb, Cs or any combination thereof, and M consists essentially of Ce, Sc, Y, La, Lu, Gd, Pr, Tb, Yb, Nd or any combination thereof. Furthermore, a method of making halide scintillator materials of the above-mentioned compositions is disclosed. In one example, high-purity starting halides (such as CsBr, CeBr3, CsCl and CeCl3) are mixed and melted to synthesize a compound of the desired composition of the scintillator material. A single crystal of the scintillator material is then grown from the synthesized compound by the Bridgman method. The disclosed scintillator materials are suitable for making scintillation detectors used in applications such as medical imaging and homeland security.
摘要翻译： 公开了一种卤化物闪烁体材料。 该材料是单晶的并且具有式A3MBr6（1-x）Cl6x（例如Cs3CeBr6（1-x）Cl6x）或AM2Br7（1-x）Cl7x（例如CsCe2Br7（1-x）Cl7x）的组成） ，其中A基本上由Li，NaK，Rb，Cs或其组合组成，M基本上由Ce，Sc，Y，La，Lu，Gd，Pr，Tb，Yb，Nd或 其任何组合。 此外，公开了制备上述组合物的卤化物闪烁体材料的方法。 在一个实例中，将高纯度起始卤化物（例如CsBr，CeBr 3，CsCl和CeCl 3）混合并熔融以合成所需闪烁体材料组成的化合物。 然后通过Bridgman方法从合成的化合物生长闪烁体材料的单晶。 公开的闪烁体材料适用于制造用于医学成像和国土安全等应用的闪烁检测器。
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公开(公告)号：US08912498B2
公开(公告)日：2014-12-16
申请号：US13098642
申请日：2011-05-02
CPC分类号： C09K11/772 , C30B11/00 , C30B29/12 , G21K4/00
摘要： A halide scintillator material is disclosed. The material is single-crystalline and has a composition of the formula A3MBr6(1-x)Cl6x (such as Cs3CeBr6(1-x)Cl6x) or AM2Br7(1-x)Cl7x (such as CsCe2Br7(1-x)Cl7x), 0≦x≦1, wherein A consists essentially of Li, Na K, Rb, Cs or any combination thereof, and M consists essentially of Ce, Sc, Y, La, Lu, Gd, Pr, Tb, Yb, Nd or any combination thereof. Furthermore, a method of making halide scintillator materials of the above-mentioned compositions is disclosed. In one example, high-purity starting halides (such as CsBr, CeBr3, CsCl and CeCl3) are mixed and melted to synthesize a compound of the desired composition of the scintillator material. A single crystal of the scintillator material is then grown from the synthesized compound by the Bridgman method. The disclosed scintillator materials are suitable for making scintillation detectors used in applications such as medical imaging and homeland security.
摘要翻译： 公开了一种卤化物闪烁体材料。 该材料是单晶的并且具有式A3MBr6（1-x）Cl6x（例如Cs3CeBr6（1-x）Cl6x）或AM2Br7（1-x）Cl7x（例如CsCe2Br7（1-x）Cl7x）的组成） ，其中A基本上由Li，NaK，Rb，Cs或其组合组成，M基本上由Ce，Sc，Y，La，Lu，Gd，Pr，Tb，Yb，Nd或 其任何组合。 此外，公开了制备上述组合物的卤化物闪烁体材料的方法。 在一个实例中，将高纯度起始卤化物（例如CsBr，CeBr 3，CsCl和CeCl 3）混合并熔融以合成所需闪烁体材料组成的化合物。 然后通过Bridgman方法从合成的化合物生长闪烁体材料的单晶。 公开的闪烁体材料适用于制造用于医学成像和国土安全等应用的闪烁检测器。
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