公开(公告)号：US20140190571A1

公开(公告)日：2014-07-10

申请号：US14209216

申请日：2014-03-13

申请人： Junhua Ding ,  Michael L'Bassi ,  Tseng-Chung Lee

发明人： Junhua Ding ,  Michael L'Bassi ,  Tseng-Chung Lee

IPC分类号： G05D7/06

CPC分类号： G05D7/0635 ,  Y10T137/0318 ,  Y10T137/86389

摘要： A system for delivering pulses of a desired mass of gas to a tool, comprising: a mass flow controller including flow sensor, a control valve and a dedicated controller configured and arranged to receive a recipe of a sequence of steps for opening and closing the control valve so as to deliver as sequence of gas pulses as a function of the recipe. The mass flow controller is configured and arranged so as to operate in either one of at least two modes: as a traditional mass flow controller (MFC) mode or in a pulse gas delivery (PGD) mode. Further, the mass flow controller includes an input configured to receive an input signal; an output configured to provide an output signal; a communication port configured to receive program instructions; memory configured and arranged to receive programming data determining the programmed configuration of the mass flow controller as either a digital or analog configuration; and a processor/controller for operating the mass flow controller in accordance with the programmed configuration.

摘要翻译： 一种用于将期望质量的气体脉冲输送到工具的系统，包括：质量流量控制器，包括流量传感器，控制阀和专用控制器，其被配置和布置成接收用于打开和关闭控制的一系列步骤的配方 阀门，以作为配方的函数输送气体脉冲序列。 质量流量控制器被配置和布置成以至少两种模式中的任一种操作：作为传统质量流量控制器（MFC）模式或脉冲气体输送（PGD）模式。 此外，质量流量控制器包括被配置为接收输入信号的输入; 被配置为提供输出信号的输出; 通信端口，被配置为接收程序指令; 存储器被配置和布置成接收将质量流量控制器的编程配置确定为数字或模拟配置的编程数据; 以及用于根据编程配置操作质量流量控制器的处理器/控制器。

公开(公告)号：US06228277B1

公开(公告)日：2001-05-08

申请号：US09172456

申请日：1998-10-14

申请人： Avinoam Kornblit ,  Tseng-Chung Lee ,  Heon Lee ,  Helen Louise Maynard

发明人： Avinoam Kornblit ,  Tseng-Chung Lee ,  Heon Lee ,  Helen Louise Maynard

IPC分类号： H01L2166

CPC分类号： H01L22/26 ,  G01B11/0683 ,  H01J37/32935 ,  H01J2237/334

摘要： The specification describes an interferometric in-situ end point detection technique for plasma etching in which the end point is predicted before any overetching occurs. It is based on the recognition that the wavelength of the monitoring beam can be selected so that only a single interferometric fringe appears before clearing. Knowing there is only one fringe, detection is simplified and the etching process can be terminated while a finite but small thickness of the layer remains. This allows etching partial thicknesses of layers. It also allows a two step etch process wherein the etch chemistry can be changed to a highly selective etch to complete clearing of the layer.

摘要翻译： 本说明书描述了用于等离子体蚀刻的干涉式原位终点检测技术，其中在任何过蚀刻发生之前预测终点。 基于这样的认识，可以选择监测光束的波长，使得在清除之前仅出现单个干涉条纹。 知道只有一个边缘，检测被简化，并且蚀刻过程可以终止，同时层的有限但较小的厚度保留。 这允许蚀刻层的部分厚度。 它还允许两步蚀刻工艺，其中蚀刻化学物质可以改变为高选择性蚀刻以完成层的清除。

公开(公告)号：US5494697A

公开(公告)日：1996-02-27

申请号：US152776

申请日：1993-11-15

申请人： Nadine Blayo ,  Dale E. Ibbotson ,  Tseng-Chung Lee

发明人： Nadine Blayo ,  Dale E. Ibbotson ,  Tseng-Chung Lee

IPC分类号： G01J4/00 ,  G01N21/21 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66

CPC分类号： H01J37/32935 ,  G01N21/211 ,  H01J37/32972

摘要： An ellipsometric method for process control in the context of device fabrication is disclosed. An ellipsometric signal is used to provide information about the device during the fabrication process. The information is used to better control the process. An ellipsometric signal of a particular wavelength is selected. The signal is selected based on the composition and thickness of the films on the substrate through which the ellipsometric signal will pass before it is reflected from the substrate. Once the appropriate wavelength is determined, the ellipsometric signal is used to monitor the thickness of the films on the substrate over time, to assist in controlling the deposition and removal of films on the substrate, and to perform other process control functions in the context of device fabrication. The ellipsometric method is used to control the deposition and removal of films that underlie patterned masks with aspect ratios of 0.3 or more, that overlie topography on a substrate surface, or that both underlie a mask and overlie topography.

摘要翻译： 公开了一种用于设备制造背景下的过程控制的椭偏方法。 椭圆测量信号用于在制造过程中提供有关器件的信息。 该信息用于更好地控制过程。 选择特定波长的椭圆信号。 基于在从衬底反射之前经过椭偏信号的衬底上的膜的组成和厚度来选择该信号。 一旦确定了合适的波长，则椭偏信号用于随着时间的推移来监测衬底上的膜的厚度，以帮助控制衬底上的膜的沉积和去除，并且在上下文中执行其它过程控制功能 器件制造。 椭圆方法用于控制在图案化掩模的底部的沉积和去除，该图案掩模的纵横比为0.3或更大，覆盖在基底表面上的形貌，或者掩模和覆盖在地形之上。

公开(公告)号：US20120216888A1

公开(公告)日：2012-08-30

申请号：US13344387

申请日：2012-01-05

申请人： Junhua Ding ,  Michael L'Bassi ,  Tseng-Chung Lee

发明人： Junhua Ding ,  Michael L'Bassi ,  Tseng-Chung Lee

IPC分类号： G05D16/00

CPC分类号： G05D7/0635 ,  C23C16/45523 ,  C23C16/45557 ,  G01F1/72 ,  Y10T137/8593

摘要： A system for delivering pulses of a desired mass of gas to a tool, comprising: a mass flow controller including flow sensor, a control valve and a dedicated controller configured and arranged to receive a recipe of a sequence of steps for opening and closing the control valve so as to deliver as sequence of gas pulses as a function of the recipe. The mass flow controller is configured and arranged so as to operate in either one of at least two modes: as a traditional mass flow controller (MFC) mode or in a pulse gas delivery (PGD) mode. Further, the dedicated controller is configured and arranged to delivery pulses of gas in accordance with anyone of three different types of pulse gas delivery processes: a time based pulse delivery process, a mole based pulse delivery process and a profile based pulse delivery process.

摘要翻译： 一种用于将期望质量的气体脉冲输送到工具的系统，包括：质量流量控制器，包括流量传感器，控制阀和专用控制器，其被配置和布置成接收用于打开和关闭控制的一系列步骤的配方 阀门，以作为配方的函数输送气体脉冲序列。 质量流量控制器被配置和布置成以至少两种模式中的任一种操作：作为传统质量流量控制器（MFC）模式或脉冲气体输送（PGD）模式。 此外，专用控制器被配置和布置成根据三种不同类型的脉冲气体输送过程中的任何一种输送气体脉冲：基于时间的脉冲输送过程，基于摩尔的脉冲输送过程和基于分布的脉冲输送过程。

公开(公告)号：US20080163897A1

公开(公告)日：2008-07-10

申请号：US11621867

申请日：2007-01-10

申请人： JIANSHE TANG ,  Willey Weng ,  Wei Lu ,  Han-Wen Chen ,  Tseng-Chung Lee ,  Ching Hwa Weng

发明人： JIANSHE TANG ,  Willey Weng ,  Wei Lu ,  Han-Wen Chen ,  Tseng-Chung Lee ,  Ching Hwa Weng

IPC分类号： B08B3/04

CPC分类号： C11D11/0047 ,  C11D3/3947 ,  C11D7/08 ,  H01L21/02063 ,  H01L21/02068

摘要： A method and apparatus for removing residue on a wafer is described. A first solution is applied to remove a first type of residue from a metal mask on the wafer. A second solution is applied to remove a second type of residue from the metal mask on the wafer.

摘要翻译： 描述了用于去除晶片上残留物的方法和装置。 应用第一种方案从晶片上的金属掩模中除去第一类型的残留物。 应用第二种解决方案来从晶片上的金属掩模中除去第二类型的残余物。

公开(公告)号：US5877407A

公开(公告)日：1999-03-02

申请号：US898261

申请日：1997-07-22

申请人： Gardy Cadet ,  Dale Edward Ibbotson ,  Tseng-Chung Lee ,  Edward Alois Rietman

发明人： Gardy Cadet ,  Dale Edward Ibbotson ,  Tseng-Chung Lee ,  Edward Alois Rietman

IPC分类号： G01H5/00 ,  G01N29/024 ,  G01N29/02 ,  H01L21/3065

CPC分类号： B81C1/00587 ,  B81C99/0065 ,  G01H5/00 ,  G01N29/024 ,  B81C2201/0142 ,  G01N2291/011

摘要： A method for determining the endpoint of a plasma etch process is disclosed. The endpoint of the plasma etch process is determined using an acoustic cell attached to an exhaust port on a reaction chamber of a plasma reactor. At least a portion of the gas from the reaction chamber flows into the acoustic cell during the plasma etch process. Acoustic signals are periodically transmitted through the gas flowing in the acoustic cell and a first velocity for the acoustic signals associated with etching a first material layer formed on a substrate is determined. Thereafter, the endpoint of the plasma etch step is determined when the first velocity changes to a second velocity associated with etching the first material layer through its thickness to its interface with an underlying material layer. The gas from the reaction chamber optionally flows through a compressor prior to flowing into the acoustic cell. The compressor increases the pressure of the gas that flows into the acoustic cell.

摘要翻译： 公开了一种用于确定等离子体蚀刻工艺的端点的方法。 使用附着在等离子体反应器的反应室上的排气口的声学单元来确定等离子体蚀刻工艺的终点。 在等离子体蚀刻工艺期间，来自反应室的至少一部分气体流入声学室。 声学信号通过在声学单元中流动的气体周期性地传输，并且确定与蚀刻形成在衬底上的第一材料层相关联的声学信号的第一速度。 此后，当第一速度改变为与将第一材料层通过其厚度蚀刻到其与下层材料层的界面相关联的第二速度时，确定等离子体蚀刻步骤的端点。 来自反应室的气体在流入声室之前可选地流过压缩机。 压缩机增加流入声学室的气体的压力。

公开(公告)号：US20080163905A1

公开(公告)日：2008-07-10

申请号：US11975253

申请日：2007-10-17

申请人： Jianshe Tang ,  Willey Weng ,  Wei Lu ,  Han-Wen Chen ,  Tseng-Chung Lee

发明人： Jianshe Tang ,  Willey Weng ,  Wei Lu ,  Han-Wen Chen ,  Tseng-Chung Lee

IPC分类号： B08B3/02 ,  B08B3/08

CPC分类号： C11D11/0047 ,  C11D3/3947 ,  C11D7/08 ,  H01L21/02063 ,  H01L21/02068

摘要： A method and apparatus for removing residue on a wafer is described. A first solution is applied to remove a first type of residue from a metal mask on the wafer. A second solution is applied to remove a second type of residue from the metal mask on the wafer.

摘要翻译： 描述了用于去除晶片上残留物的方法和装置。 应用第一种方案从晶片上的金属掩模中除去第一类型的残留物。 应用第二种解决方案来从晶片上的金属掩模中除去第二类型的残余物。

公开(公告)号：US20080135069A1

公开(公告)日：2008-06-12

申请号：US11977935

申请日：2007-10-25

申请人： Wei Lu ,  Jianshe Tang ,  Alexander Sou-Kang Ko ,  Nelson A. Yee ,  Bo Xie ,  Tseng-Chung Lee

发明人： Wei Lu ,  Jianshe Tang ,  Alexander Sou-Kang Ko ,  Nelson A. Yee ,  Bo Xie ,  Tseng-Chung Lee

IPC分类号： B08B3/02 ,  B08B5/00 ,  B08B11/02

CPC分类号： B08B3/02 ,  B05B7/0861 ,  H01L21/67051

摘要： An apparatus and a method for cleaning a wafer are described. A chamber has a substrate support. A nozzle is disposed above the substrate support to spray de-ionized water droplets. The nozzle is coupled to a source of de-ionized water and a source of nitrogen. The nozzle is configured to mix the de-ionized water and the nitrogen outside the nozzle to have independent flow rate control of the two fluids for an optimized atomization in terms of spray uniformity in droplet size and velocity distributions. The nozzle to wafer distance can be adjusted and tuned to have an optimized jet spray for efficiently removing particles or contaminants from a surface of a wafer without causing any feature damage.

摘要翻译： 描述了用于清洁晶片的装置和方法。 室具有基板支撑。 喷嘴设置在基板支架上方以喷射去离子水滴。 喷嘴连接到去离子水源和氮源。 喷嘴构造成将去离子水和喷嘴外部的氮混合以使得两个流体具有独立的流速控制，以便在液滴尺寸和速度分布的喷雾均匀性方面优化雾化。 喷嘴到晶片间距可以被调节和调整以具有优化的喷射喷雾，以有效地从晶片表面去除颗粒或污染物，而不会造成任何特征损坏。

公开(公告)号：US5653894A

公开(公告)日：1997-08-05

申请号：US446122

申请日：1995-05-19

申请人： Dale Edward Ibbotson ,  Tseng-Chung Lee ,  Helen Louise Maynard ,  Edward Alois Rietman

发明人： Dale Edward Ibbotson ,  Tseng-Chung Lee ,  Helen Louise Maynard ,  Edward Alois Rietman

IPC分类号： G06F15/18 ,  G05B13/02 ,  G06N3/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  G01N21/00 ,  H05H1/00

CPC分类号： H01J37/32935 ,  G05B13/027 ,  H01J37/32963

摘要： The present invention is predicated upon the fact that a process signature from a plasma process used in fabricating integrated circuits contains information about phenomena which cause variations in the fabrication process such as age of the plasma reactor, densities of the wafers exposed to the plasma, chemistry of the plasma, and concentration of the remaining material. In accordance with the present invention, a method for using neural networks to determine plasma etch end-point times in an integrated circuit fabrication process is disclosed. The end-point time is based on in-situ monitoring of at least two parameters during the plasma etch process. After the neural network is trained to associate a certain condition or set of conditions with the endpoint of the process, the neural network is used to control the process.

摘要翻译： 本发明基于以下事实：来自用于制造集成电路的等离子体工艺的工艺特征包含关于引起制造工艺变化的现象的信息，例如等离子体反应器的年龄，暴露于等离子体的晶片的密度，化学 的等离子体和剩余材料的浓度。 根据本发明，公开了一种使用神经网络来确定集成电路制造工艺中的等离子体蚀刻终点时间的方法。 终点时间基于在等离子体蚀刻过程期间至少两个参数的原位监测。 在训练神经网络以将某一条件或一组条件与过程的端点相关联之后，使用神经网络来控制该过程。

公开(公告)号：US10353408B2

公开(公告)日：2019-07-16

申请号：US13344387

申请日：2012-01-05

申请人： Junhua Ding ,  Michael L'Bassi ,  Tseng-Chung Lee

发明人： Junhua Ding ,  Michael L'Bassi ,  Tseng-Chung Lee

IPC分类号： C23C16/455 ,  G05D7/06 ,  G01F1/72

摘要： A system for delivering pulses of a desired mass of gas to a tool, comprising: a mass flow controller including flow sensor, a control valve and a dedicated controller configured and arranged to receive a recipe of a sequence of steps for opening and closing the control valve so as to deliver as sequence of gas pulses as a function of the recipe. The mass flow controller is configured and arranged so as to operate in either one of at least two modes: as a traditional mass flow controller (MFC) mode or in a pulse gas delivery (PGD) mode. Further, the dedicated controller is configured and arranged to delivery pulses of gas in accordance with anyone of three different types of pulse gas delivery processes: a time based pulse delivery process, a mole based pulse delivery process and a profile based pulse delivery process.