公开(公告)号：US20130139878A1

公开(公告)日：2013-06-06

申请号：US13266738

申请日：2011-04-07

申请人： Yashraj K. Bhatnagar ,  Brenden McComb ,  Xiao Ming ,  Deepak Jadhav ,  Anantha K. Subramani ,  Wei D. Wang ,  Jianshe Tang

发明人： Yashraj K. Bhatnagar ,  Brenden McComb ,  Xiao Ming ,  Deepak Jadhav ,  Anantha K. Subramani ,  Wei D. Wang ,  Jianshe Tang

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/04

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/076 ,  H01L31/1864 ,  Y02E10/548

摘要： Embodiments of the invention provide a method for forming a solar cell including forming a layer comprising alumina on a substrate and forming a transparent conductive layer on the layer comprising alumina. The method may also include forming a transparent conductive seed layer on the layer comprising alumina and forming a transparent conductive bulk layer on the transparent conductive seed layer. Embodiments of the invention also include photovoltaic devices having a substrate, a layer comprising alumina adjacent to the substrate, a zinc oxide-containing transparent conductive seed layer adjacent to the layer comprising alumina, and a zinc oxide-containing transparent conductive bulk layer adjacent the zinc oxide-containing transparent conductive seed layer.

摘要翻译： 本发明的实施例提供了一种形成太阳能电池的方法，包括在基底上形成包含氧化铝的层，并在包含氧化铝的层上形成透明导电层。 该方法还可以包括在包含氧化铝的层上形成透明导电籽晶层，并在透明导电种子层上形成透明导电体层。 本发明的实施例还包括具有基底的光伏器件，与基底相邻的氧化铝层，与氧化铝相邻的含氧化锌的透明导电籽晶层和与锌相邻的含氧化锌的透明导电体层 含氧化物的透明导电种子层。

公开(公告)号：US20080135070A1

公开(公告)日：2008-06-12

申请号：US11609843

申请日：2006-12-12

申请人： Wei Lu ,  Jianshe Tang ,  Alexander Sou-Kang Ko ,  Nelson A. Yee ,  Bo Xie ,  Tseng-Chung Lee

发明人： Wei Lu ,  Jianshe Tang ,  Alexander Sou-Kang Ko ,  Nelson A. Yee ,  Bo Xie ,  Tseng-Chung Lee

IPC分类号： B08B3/02

CPC分类号： B08B3/02 ,  B05B7/0861 ,  H01L21/67051

摘要： An apparatus and a method for cleaning a wafer are described. A chamber has a substrate support. A nozzle is disposed above the substrate support to spray de-ionized water droplets. The nozzle is coupled to a source of de-ionized water and a source of nitrogen. The nozzle is configured to mix the de-ionized water and the nitrogen outside the nozzle to have independent flow rate control of the two fluids for an optimized atomization in terms of spray uniformity in droplet size and velocity distributions. The nozzle to wafer distance can be adjusted and tuned to have an optimized jet spray for efficiently removing particles or contaminants from a surface of a wafer without causing any feature damage.

摘要翻译： 描述了用于清洁晶片的装置和方法。 室具有基板支撑。 喷嘴设置在基板支架上方以喷射去离子水滴。 喷嘴连接到去离子水源和氮源。 喷嘴构造成将去离子水和喷嘴外部的氮混合以具有独立的流速控制两种流体，以便在液滴尺寸和速度分布中的喷雾均匀性方面实现优化的雾化。 喷嘴到晶片间距可以被调节和调整以具有优化的喷射喷雾，以有效地从晶片表面去除颗粒或污染物，而不会造成任何特征损坏。

公开(公告)号：US06910942B1

公开(公告)日：2005-06-28

申请号：US08869328

申请日：1997-06-05

申请人： David A. Dornfeld ,  Jianshe Tang

发明人： David A. Dornfeld ,  Jianshe Tang

IPC分类号： B24B37/013 ,  B24B49/00 ,  B24B49/04 ,  B24B53/007 ,  B24B53/017 ,  B24B1/00

CPC分类号： B24B37/013 ,  B24B49/003 ,  B24B49/04 ,  B24B53/017

摘要： The chemical-mechanical polishing (CMP) of products in general and semiconductor wafers in particular is controlled by monitoring the acoustic emissions generated during CMP. A signal is generated with the acoustic emissions which is reflective of the energy of the acoustic emissions. The signals are monitored and the CMP process is adjusted in response to a change in the acoustic emission energy. Changes in the acoustic emission energy signal can be used to determine the end-point for CMP, particularly when fabricating semiconductor wafers for planarizing/polishing a given surface thereof. Long-term changes in the acoustic emission energy signals resulting from process changes including, for example, wear of the polishing pad, can also be detected with the acoustic emission energy signals so that desired or necessary process adjustments, such as a reconditioning of the polishing pad, for example, can be effected or the process can be stopped or an alarm signal can be generated when unacceptable process abnormalities occur.

公开(公告)号：US06345630B2

公开(公告)日：2002-02-12

申请号：US09738797

申请日：2000-12-15

申请人： Boris Fishkin ,  Jianshe Tang ,  Brian J. Brown

发明人： Boris Fishkin ,  Jianshe Tang ,  Brian J. Brown

IPC分类号： B08B310

CPC分类号： H01L21/67051 ,  H01L21/67046 ,  Y10S134/902

摘要： An inventive edge cleaning device is provided for cleaning the edge a thin disc such as a semiconductor wafer. The inventive edge cleaning device has a sonic nozzle positioned so as to direct a liquid jet at the edge surface of the thin disc. Preferably the sonic nozzle is radially spaced from the thin disc's edge so that scrubbing, spin rinsing or spin cleaning may be simultaneously performed on the major surfaces of the thin disc as the thin disc edge is cleaned by the sonic nozzle. The liquid jet may include deionized water, NH4OH, KOH, TMAH, HF, citric acid, a surfactant, or other similar cleaning solutions, and the nozzle may remain stationary as the thin disc rotates or the nozzle may scan the circumference of the thin disc to clean the entire edge of the thin disc.

摘要翻译： 提供了一种创新的边缘清洁装置，用于清洁边缘诸如半导体晶片的薄盘。 本发明的边缘清洁装置具有定位成在薄盘的边缘表面处引导液体射流的声波喷嘴。 优选地，声波喷嘴与薄盘的边缘径向间隔开，使得当由声波喷嘴清洁薄盘边缘时，可以在薄盘的主表面上同时进行洗涤，旋转漂洗或旋转清洁。 液体射流可以包括去离子水，NH 4 OH，KOH，TMAH，HF，柠檬酸，表面活性剂或其他类似的清洁溶液，并且当薄盘旋转时喷嘴可以保持静止，或者喷嘴可以扫描薄盘的圆周 以清洁薄片的整个边缘。

公开(公告)号：US06276371B1

公开(公告)日：2001-08-21

申请号：US09589463

申请日：2000-06-07

申请人： Boris Fishkin ,  Brian J. Brown ,  Jianshe Tang

发明人： Boris Fishkin ,  Brian J. Brown ,  Jianshe Tang

IPC分类号： B08B312

CPC分类号： H01L21/67057 ,  Y10S134/902

摘要： A method and apparatus for cleaning wafer edges is provided. The inventive wafer cleaner employs a transducer equal in length to the diameter of a wafer to be cleaned, and positioned to direct sonic energy in line with the wafer's edge. Supporting and rotating mechanisms are positioned along the wafer's edge, outside of the transducer's high energy field, and preferably such that approximately 50 percent of the wafer is positioned between the wafer supports and the transducer. Therefore, minimal sonic energy is blocked from reaching the wafer's surface. The transducer dimensions relative to the wafer, and the positioning of the wafer supports relative to the transducer enable the system to achieve an approximately 50 percent edge cleaning duty cycle as the wafer is rotated.

摘要翻译： 提供了一种用于清洁晶片边缘的方法和装置。 本发明的晶片清洁器采用与要清洁的晶片的直径相等的换能器，并定位成引导与晶片边缘一致的声能。 支撑和旋转机构沿着晶片的边缘定位在换能器的高能场外部，并且优选地使得大约50％的晶片位于晶片支架和换能器之间。 因此，最小的声能被阻止到达晶片的表面。 相对于晶片的换能器尺寸以及晶片支撑件相对于换能器的定位使得系统能够在晶片旋转时实现大约50％的边缘清洁占空比。

公开(公告)号：US06202658B1

公开(公告)日：2001-03-20

申请号：US09191061

申请日：1998-11-11

申请人： Boris Fishkin ,  Jianshe Tang ,  Brian J. Brown

发明人： Boris Fishkin ,  Jianshe Tang ,  Brian J. Brown

IPC分类号： B08B310

CPC分类号： H01L21/67051 ,  H01L21/67046 ,  Y10S134/902

摘要： An inventive edge cleaning device is provided for cleaning the edge a thin disc such as a semiconductor wafer. The inventive edge cleaning device has a sonic nozzle positioned so as to direct a liquid jet at the edge surface of the thin disc. Preferably the sonic nozzle is radially spaced from the thin disc's edge so that scrubbing, spin rinsing or spin cleaning may be simultaneously performed on the major surfaces of the thin disc as the thin disc edge is cleaned by the sonic nozzle. The liquid jet may include de-ionized water, NH4OH, KOH, TMAH, HF, citric acid, a surfactant, or other similar cleaning solutions, and the nozzle may remain stationary as the thin disc rotates or the nozzle may scan the circumference of the thin disc to clean the entire edge of the thin disc.

摘要翻译： 提供了一种创新的边缘清洁装置，用于清洁边缘诸如半导体晶片的薄盘。 本发明的边缘清洁装置具有定位成在薄盘的边缘表面处引导液体射流的声波喷嘴。 优选地，声波喷嘴与薄盘的边缘径向间隔开，使得当由声波喷嘴清洁薄盘边缘时，可以在薄盘的主表面上同时进行洗涤，旋转漂洗或旋转清洁。 液体射流可以包括去离子水，NH 4 OH，KOH，TMAH，HF，柠檬酸，表面活性剂或其它类似的清洁溶液，并且当薄盘旋转时喷嘴可以保持静止，或者喷嘴可以扫描 薄光盘清洁光盘的整个边缘。

公开(公告)号：US20200262024A1

公开(公告)日：2020-08-20

申请号：US16795103

申请日：2020-02-19

申请人： Shou-Sung Chang ,  Hari Soundararajan ,  Haosheng Wu ,  Jianshe Tang

发明人： Shou-Sung Chang ,  Hari Soundararajan ,  Haosheng Wu ,  Jianshe Tang

IPC分类号： B24B37/015

摘要： A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature control system including a source of a fluid medium and one or more openings positioned over the platen and separated from the polishing pad and configured for the fluid medium to flow onto the polishing pad to heat or cool the polishing pad.

公开(公告)号：US20080230092A1

公开(公告)日：2008-09-25

申请号：US11690405

申请日：2007-03-23

申请人： Alexander Sou-Kang Ko ,  Jianshe Tang ,  Brian J. Brown ,  Richard R. Endo ,  Steven Verhaverbeke ,  Cole Franklin ,  Dennis J. Yost ,  Runzi Chang

发明人： Alexander Sou-Kang Ko ,  Jianshe Tang ,  Brian J. Brown ,  Richard R. Endo ,  Steven Verhaverbeke ,  Cole Franklin ,  Dennis J. Yost ,  Runzi Chang

IPC分类号： B08B3/00

CPC分类号： B08B7/00 ,  B08B3/024 ,  B08B3/08 ,  H01L21/67051

摘要： A single-substrate cleaning apparatus and method of use are described. In an embodiment of the present invention, a liquid cleaning solution is dispensed in small volumes to form a substantially uniform static liquid layer over a substrate surface by atomizing the viscous liquid with an inert gas in a two-phase nozzle. In another embodiment of the present invention, after a layer of the cleaning solution is formed over the substrate to be cleaned, acoustic energy is applied to the substrate to improve the cleaning efficiency. In a further embodiment, cleaning solution precipitates are avoided by dispensing de-ionized water with a spray nozzle to gradually dilute the cleaning solution prior to dispensing de-ionized water with a stream nozzle.

摘要翻译： 对单基板清洗装置及其使用方法进行说明。 在本发明的一个实施例中，通过在两相喷嘴中用惰性气体雾化粘性液体，以小体积分配液体清洗溶液以在基板表面上形成基本均匀的静态液体层。 在本发明的另一个实施方案中，在将清洁溶液层形成在要清洁的基底上之后，将声能施加到基底以提高清洁效率。 在另一个实施方案中，通过用喷嘴分配去离子水以在用流喷嘴分配去离子水之前逐渐稀释清洁溶液来避免清洁溶液沉淀物。

公开(公告)号：US20080041427A1

公开(公告)日：2008-02-21

申请号：US11974825

申请日：2007-10-15

申请人： Brian Brown ,  Dennis Yost ,  James Papanu ,  Jianshe Tang ,  Alexander Ko

发明人： Brian Brown ,  Dennis Yost ,  James Papanu ,  Jianshe Tang ,  Alexander Ko

IPC分类号： B08B3/00

CPC分类号： H01L21/67248 ,  H01L21/67109

摘要： Embodiments of the invention provide methods of applying a liquid to a backside of a substrate to bring the substrate to the temperature of the liquid. By controlling the temperature of the substrate the temperature of the semiconductor processing liquid may be maintained at a particular temperature or a type of reaction occurring in the semiconductor processing liquid may be enhanced or maintained, such as in reactions where relatively small amounts of liquid are used or expensive chemicals are used.

摘要翻译： 本发明的实施例提供了将液体施加到基底的背面以使基底达到液体温度的方法。 通过控制衬底的温度，可以将半导体处理液的温度保持在特定温度，或者可以增强或维持在半导体处理液中发生的反应类型，例如在使用相对少量液体的反应中 或使用昂贵的化学品。

公开(公告)号：US06148833A

公开(公告)日：2000-11-21

申请号：US191058

申请日：1998-11-11

申请人： Jianshe Tang ,  Brian J. Brown ,  Boris Fishkin

发明人： Jianshe Tang ,  Brian J. Brown ,  Boris Fishkin

IPC分类号： B08B3/12 ,  H01L21/00 ,  H01L21/304

CPC分类号： H01L21/67057 ,  B08B3/12 ,  Y10S134/902

摘要： A sonic tank for cleaning substrates is provided. The tank has two or more upwardly angled walls. Arrays of one or more transducers are positioned along at least two of the two or more angled walls. The transducer arrays are alternately energized maintaining nearly 100% substrate surface cleaning at any given time, and 50% duty cycle (or less) for each transducer array. The substrate supports are positioned such that nearly every point along the substrate's surface is contacted by energy from at least one transducer, and transducer opposing walls are positioned to avoid interfering reflections therefrom.