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12 条记录 (耗时 0.014 秒)

    Polishing composition
    2.
    发明授权
    Polishing composition 有权
    抛光组成

    公开(公告)号：US06488730B2

    公开(公告)日：2002-12-03

    申请号：US09850209

    申请日：2001-05-07

    申请人： Kil Sung Lee ,  Jae Seok Lee ,  Seok Jin Kim ,  Young Ki Lee ,  Tu Won Chang

    发明人： Kil Sung Lee ,  Jae Seok Lee ,  Seok Jin Kim ,  Young Ki Lee ,  Tu Won Chang

    IPC分类号： B24D300

    CPC分类号： H01L21/31053

    摘要： The present invention relates to a polishing composition comprising 30 to 99 wt % of deionized water, 0.1 to 50 wt % of powder of metallic oxide and 0.01 to 20 wt % of cyclic amine. This polishing composition can be used in a chemical mechanical polishing of thin films in integrated circuit manufacturing and has an effect of minimizing the occurrence of microscratches on the thin film after polishing. Thereby it can be applied to the manufacturing process of highly integrated circuits such as Shallow Trench Isolation.

    摘要翻译： 本发明涉及一种抛光组合物，其包含30-99重量％的去离子水，0.1-50重量％的金属氧化物粉末和0.01-20重量％的环胺。 该抛光组合物可用于集成电路制造中的薄膜的化学机械抛光，并且具有最小化抛光后薄膜上的微细纹差的发生的效果。 因此，它可以应用于诸如浅沟槽隔离的高度集成电路的制造过程。

    Process for preparing metal oxide slurries suitable for the chemical mechanical polishing of semiconductors
    3.
    发明授权
    Process for preparing metal oxide slurries suitable for the chemical mechanical polishing of semiconductors 有权
    制备适用于半导体化学机械抛光的金属氧化物浆料的方法

    公开(公告)号：US06364919B1

    公开(公告)日：2002-04-02

    申请号：US09535865

    申请日：2000-03-27

    申请人： Kil Sung Lee ,  Jae Seok Lee ,  Seok Jin Kim ,  Tu Won Chang

    发明人： Kil Sung Lee ,  Jae Seok Lee ,  Seok Jin Kim ,  Tu Won Chang

    IPC分类号： C09K314

    CPC分类号： C09G1/02 ,  C01B13/145 ,  C01B33/1417 ,  C01P2004/51 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C01P2006/22 ,  C09K3/1463

    摘要： Disclosed is a process for preparing metal oxide slurries suitable for the chemical mechanical polishing (CMP) of semiconductor devices. A suspension of metal oxide in water is dispersed at a predetermined pressure through an orifice of a dispersion chamber while two intensifier pumps are used to maintain the pressure applied to the dispersion chamber constantly, resulting in restraining or minimizing the generation of macro particles as large as or larger than 1 &mgr;m. The metal oxide slurries are uniform in particle size with narrow particle size distribution and show excellent polishing performance with a significant reduction in the occurrence frequency of microscratches, so that they are suitable for CMP of ultra-integrated semiconductor devices.

    摘要翻译： 公开了一种制备适用于半导体器件的化学机械抛光（CMP）的金属氧化物浆料的方法。 金属氧化物在水中的悬浮液以预定的压力通过分散室的孔分散，同时使用两个增压泵来恒定地施加到分散室上的压力，从而抑制或最小化大颗粒的产生， 或大于1um。 金属氧化物浆料的粒度均匀，粒度分布窄，显示出优异的抛光性能，显着降低了微观尺度的发生频率，因此适用于超集成半导体器件的CMP。

    Anisotropic conductive film forming composition
    5.
    发明授权
    Anisotropic conductive film forming composition 有权
    各向异性导电膜形成组合物

    公开(公告)号：US07700007B2

    公开(公告)日：2010-04-20

    申请号：US11273160

    申请日：2005-11-14

    申请人： Ki Sung Jung ,  Jeong Ku Kang ,  Jung Sik Choi ,  Jong Hwa Lee ,  Hyoun Young Kim ,  Tu Won Chang

    发明人： Ki Sung Jung ,  Jeong Ku Kang ,  Jung Sik Choi ,  Jong Hwa Lee ,  Hyoun Young Kim ,  Tu Won Chang

    IPC分类号： H01B1/00 ,  H01B1/22 ,  C08K3/08

    CPC分类号： C08K3/08 ,  H05K3/323

    摘要： Disclosed herein is an anisotropic conductive film forming composition, including at least one polymer comprising a polymer containing a silane group; at least one polymerizable compound; and a plurality of conductive particles. The at least one polymer may include an elastomeric polymer and a filler polymer, at least one of which contains a silane group. The at least one polymerizable compound may include a cross-linking agent and/or a polymerization reaction enhancer. The cross-linking agent may also have a silane group. In addition, the film forming composition may include a solvent. The film forming composition is advantageous in that the resulting anisotropic conductive film exhibits enhanced peel and adhesive strength and low electrical contact resistance.

    摘要翻译： 本文公开了各向异性导电膜形成组合物，其包括至少一种包含含有硅烷基团的聚合物的聚合物; 至少一种可聚合化合物; 和多个导电粒子。 至少一种聚合物可以包括弹性体聚合物和填料聚合物，其中至少一种含有硅烷基团。 所述至少一种可聚合化合物可包括交联剂和/或聚合反应增强剂。 交联剂也可以具有硅烷基。 此外，成膜组合物可以包括溶剂。 成膜组合物的优点在于所得到的各向异性导电膜具有增强的剥离和粘合强度以及低的接触电阻。

    Process for preparing metal oxide slurry suitable for semiconductor chemical mechanical polishing
    7.
    发明授权
    Process for preparing metal oxide slurry suitable for semiconductor chemical mechanical polishing 有权
    制备适用于半导体化学机械抛光的金属氧化物浆料的方法

    公开(公告)号：US06551367B2

    公开(公告)日：2003-04-22

    申请号：US09867522

    申请日：2001-05-31

    申请人： Kil Sung Lee ,  Jae Seok Lee ,  Seok Jin Kim ,  Tu Won Chang

    发明人： Kil Sung Lee ,  Jae Seok Lee ,  Seok Jin Kim ,  Tu Won Chang

    IPC分类号： C09K314

    CPC分类号： C09K3/1463 ,  C09G1/02

    摘要： There is disclosed a process for preparing a metal oxide CMP slurry suitable for semiconductor devices, wherein a mixture comprising 1 to 50 weight % of a metal oxide and 50 to 99 weight % of water is mixed in a pre-mixing tank, transferred to a dispersion chamber with the aid of a transfer pump, allowed to have a flow rate of not less than 100 m/sec by pressurization with a high pressure pump, and subjected to counter collision for dispersion through two orifices in the dispersion chamber. The slurry has particles which are narrow in particle size distribution, showing an ultrafine size ranging from 30 to 500 nm. Also, the slurry is not polluted at all during its preparation and shows no tailing phenomena, so that it is preventive of &mgr;-scratching. Therefore, it can be used in the planarization for shallow trench isolation, interlayer dielectrics and inter metal dielectrics through a CMP process.

    摘要翻译： 公开了一种制备适用于半导体器件的金属氧化物CMP浆料的方法，其中将包含1至50重量％的金属氧化物和50至99重量％的水的混合物混合在预混合罐中，转移至 借助于输送泵的分散室，通过用高压泵加压使其具有不小于100m /秒的流速，并通过分散室中的两个孔进行反向碰撞以进行分散。 该浆料具有粒径分布窄的粒子，显示出30〜500nm的超细尺寸。 此外，浆料在其制备过程中根本不会被污染，并且不显示拖尾现象，因此可以防止刮擦。 因此，可以通过CMP工艺在浅沟槽隔离，层间电介质和金属间电介质的平面化中使用。

    Composition for chemical mechanical polishing
    8.
    发明授权
    Composition for chemical mechanical polishing 有权
    化学机械抛光用组合物

    公开(公告)号：US06447694B1

    公开(公告)日：2002-09-10

    申请号：US09598768

    申请日：2000-06-22

    申请人： Kil Sung Lee ,  Seok Jin Kim ,  Jae Seok Lee ,  Tu Won Chang

    发明人： Kil Sung Lee ,  Seok Jin Kim ,  Jae Seok Lee ,  Tu Won Chang

    IPC分类号： C09K1300

    CPC分类号： C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

    摘要： Disclosed is a polishing composition which comprises an Al2O3/SiO2 composite-based metal oxide powder, deionized water and an additive, said metal oxide powder comprising an Al2O3/SiO2 composite as an essential component. The polishing composition is superior in removal rate and free of causing microscratches after polishing and thus, suitable for use in the global planarization of device wafer surfaces.

    摘要翻译： 公开了一种抛光组合物，其包含Al 2 O 3 / SiO 2复合基金属氧化物粉末，去离子水和添加剂，所述金属氧化物粉末包含Al 2 O 3 / SiO 2复合材料作为必要组分。 抛光组合物在去除速度上优异，并且在抛光后不会引起微细化，因此适用于器件晶片表面的全局平面化。

    Polythiophene-based conductive polymer liquid composition of high conductivity and transparency
    10.
    发明授权
    Polythiophene-based conductive polymer liquid composition of high conductivity and transparency 有权
    聚噻吩基导电聚合物液体组成具有高导电性和透明度

    公开(公告)号：US06248818B1

    公开(公告)日：2001-06-19

    申请号：US09432620

    申请日：1999-11-03

    申请人： Hyun Don Kim ,  Hae Ryong Chung ,  Min Kyo Cheong ,  Tu Won Chang

    发明人： Hyun Don Kim ,  Hae Ryong Chung ,  Min Kyo Cheong ,  Tu Won Chang

    IPC分类号： C08J510

    CPC分类号： C08G61/126 ,  C09D5/24

    摘要： Disclosed are polythiophene-based conductive polymer liquid compositions of high conductivity and transparency. The compositions comprise 16-32 weight % of an aqueous polythiophene-based conductive polymer solution, 52-80 weight % of an alcohol solvent, 1-12 weight % of an amide solvent, 0.01-0.4 weight % of a sulfonic acid group-containing monomer dopant, and optionally 2-8 weight % of an alkoxysilane. The compositions can be applied to transparent substrates to form coatings which have a surface resistance of 1 k&OHgr;/□ or less and a transmittance of 92% or higher. With the excellent conductivity and transparency, the compositions are useful as electromagnetic wave-shielding materials, finding numerous applications in cathode ray tube screens (TV sets and computer monitors) as well as CPP films, polyethyleneterephthalate films, polycarbonate panels, and acryl panels.

    摘要翻译： 公开了具有高导电性和透明性的聚噻吩基导电聚合物液体组合物。 组合物包含16-32重量％的聚噻吩基导电聚合物水溶液，52-80重量％的醇溶剂，1-12重量％的酰胺溶剂，0.01-0.4重量％的含磺酸基 单体掺杂剂和任选的2-8重量％的烷氧基硅烷。 该组合物可以应用于透明基材以形成表面电阻为1kOMEGA /平方或更小，透光率为92％或更高的涂层。 具有优异的导电性和透明度，该组合物可用作电磁波屏蔽材料，在阴极射线管屏幕（电视机和计算机显示器）以及CPP膜，聚对苯二甲酸乙二醇酯膜，聚碳酸酯板和丙烯酸板中得到广泛应用。