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公开(公告)号:US20190027644A1
公开(公告)日:2019-01-24
申请号:US15714749
申请日:2017-09-25
申请人: Elliott R. Brown , Weidong Zhang , Tyler Growden , Paul R. Berger , David Storm , David Meyer
发明人: Elliott R. Brown , Weidong Zhang , Tyler Growden , Paul R. Berger , David Storm , David Meyer
IPC分类号: H01L33/06 , H01L29/20 , H01L29/88 , H01L33/32 , H01S5/343 , H01L33/50 , H01S5/14 , H01S5/187 , H01S5/02 , H01S5/042 , H01S5/183 , H01L33/00 , H01L33/12 , C02F1/32
摘要: Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.
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公开(公告)号:US10461216B2
公开(公告)日:2019-10-29
申请号:US15714749
申请日:2017-09-25
申请人: Elliott R. Brown , Weidong Zhang , Tyler Growden , Paul R. Berger , David Storm , David Meyer
发明人: Elliott R. Brown , Weidong Zhang , Tyler Growden , Paul R. Berger , David Storm , David Meyer
IPC分类号: H01L33/06 , H01L29/88 , H01L33/32 , H01S5/343 , H01S5/14 , H01S5/187 , H01S5/02 , H01S5/042 , H01S5/183 , H01L33/00 , H01L33/12 , C02F1/32 , H01L29/20 , H01L33/50
摘要: Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.
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