公开(公告)号：US10271601B2

公开(公告)日：2019-04-30

申请号：US16002090

申请日：2018-06-07

Applicant: Tzu-Chiang Chen

Inventor： Le-Yen Chang

IPC: F16M13/00 ,  A42B3/04 ,  A45F5/02 ,  G03B17/56

Abstract: The helmet has a cap, and a turning assembly and a fastening device assembled on the cap. The helmet is formed as an integral whole and has a simplified and compact structure. A camera is mounted to the fastening device and is held by a lower holder and an upper holder of the turning assembly. A locking panel of the fastening device allows the camera to be easily and quickly mounted onto the cap via the fastening device or removed from the fastening device. With a locking member engaging in or disengaging from one of multiple engaging recesses of a corresponding guiding rod of the turning assembly, a position of the camera relative to the cap can be also easily and quickly adjusted.

公开(公告)号：US20180351436A1

公开(公告)日：2018-12-06

申请号：US15884370

申请日：2018-01-30

Applicant: Tzu-Chiang CHEN

Inventor： Tzu-Chiang CHEN

IPC: H02K11/215 ,  F25B9/14 ,  F25B31/02 ,  H02K7/08

CPC classification number: H02K11/215 ,  F25B9/14 ,  F25B31/026 ,  H02K7/085 ,  H02K2211/03 ,  H05K5/0008 ,  H05K5/0047

Abstract: A refrigerating machine having a detachable Hall element is provided with a cold heat exchange mechanism. The cold-heat exchange mechanism is driven by a driving assembly to generate a low temperature cooling zone at one end of the cold heat exchange mechanism. The driving assembly is composed of at least one rotor and a stator. After the power is input, the rotor can rotate a shaft to drive the cold-heat exchange mechanism to work. The driving assembly further has at least one Hall element and a circuit board on which the Hall element is mounted. Therefore, when the Hall element is damaged, the circuit board can be easily removed for replacement or repair.

公开(公告)号：US08796759B2

公开(公告)日：2014-08-05

申请号：US12837093

申请日：2010-07-15

Applicant: Tsu-Hsiu Perng ,  Chih Chieh Yeh ,  Tzu-Chiang Chen ,  Chia-Cheng Ho ,  Chih-Sheng Chang

Inventor： Tsu-Hsiu Perng ,  Chih Chieh Yeh ,  Tzu-Chiang Chen ,  Chia-Cheng Ho ,  Chih-Sheng Chang

IPC: H01L29/76

CPC classification number: H01L29/66795 ,  H01L21/02532 ,  H01L21/30604 ,  H01L29/161 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7848 ,  H01L29/785

Abstract: A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary FinFET device includes a semiconductor substrate; a fin structure disposed over the semiconductor substrate; and a gate structure disposed on a portion of the fin structure. The gate structure traverses the fin structure and separates a source region and a drain region of the fin structure, the source and drain region defining a channel therebetween. The source and drain region of the fin structure include a strained source and drain feature. The strained source feature and the strained drain feature each include: a first portion having a first width and a first depth; and a second portion disposed below the first portion, the second portion having a second width and a second depth. The first width is greater than the second width, and the first depth is less than the second depth.

Abstract translation: 公开了一种用于制造FinFET器件的FinFET器件和方法。 示例性的FinFET器件包括半导体衬底; 翅片结构，设置在所述半导体衬底上; 以及设置在鳍结构的一部分上的栅极结构。 栅极结构穿过翅片结构并分离翅片结构的源极区域和漏极区域，源极和漏极区域在其间限定通道。 翅片结构的源极和漏极区域包括应变源极和漏极特征。 应变源特征和应变漏极特征各自包括：具有第一宽度和第一深度的第一部分; 以及设置在所述第一部分下方的第二部分，所述第二部分具有第二宽度和第二深度。 第一宽度大于第二宽度，第一深度小于第二深度。

公开(公告)号：US08609499B2

公开(公告)日：2013-12-17

申请号：US13346411

申请日：2012-01-09

Applicant: Chia-Cheng Ho ,  Tzu-Chiang Chen ,  Yi-Tang Lin ,  Chih-Sheng Chang

Inventor： Chia-Cheng Ho ,  Tzu-Chiang Chen ,  Yi-Tang Lin ,  Chih-Sheng Chang

IPC: H01L21/336

CPC classification number: H01L29/785 ,  H01L29/66795

Abstract: A method includes forming a gate stack including a gate electrode on a first semiconductor fin. The gate electrode includes a portion over and aligned to a middle portion of the first semiconductor fin. A second semiconductor fin is on a side of the gate electrode, and does not extend to under the gate electrode. The first and the second semiconductor fins are spaced apart from, and parallel to, each other. An end portion of the first semiconductor fin and the second semiconductor fin are etched. An epitaxy is performed to form an epitaxy region, which includes a first portion extending into a first space left by the etched first end portion of the first semiconductor fin, and a second portion extending into a second space left by the etched second semiconductor fin. A first source/drain region is formed in the epitaxy region.

公开(公告)号：US08759184B2

公开(公告)日：2014-06-24

申请号：US13346445

申请日：2012-01-09

Applicant: Chia-Cheng Ho ,  Tzu-Chiang Chen ,  Yi-Tang Lin ,  Chih-Sheng Chang

Inventor： Chia-Cheng Ho ,  Tzu-Chiang Chen ,  Yi-Tang Lin ,  Chih-Sheng Chang

IPC: H01L21/336 ,  H01L29/76 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/7848 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A method includes providing a plurality of semiconductor fins parallel to each other, and includes two edge fins and a center fin between the two edge fins. A middle portion of each of the two edge fins is etched, and the center fin is not etched. A gate dielectric is formed on a top surface and sidewalls of the center fin. A gate electrode is formed over the gate dielectric. The end portions of the two edge fins and end portions of the center fin are recessed. An epitaxy is performed to form an epitaxy region, wherein an epitaxy material grown from spaces left by the end portions of the two edge fins are merged with an epitaxy material grown from a space left by the end portions of the center fin to form the epitaxy region. A source/drain region is formed in the epitaxy region.

Abstract translation: 一种方法包括提供彼此平行的多个半导体鳍片，并且包括两个边缘鳍片和两个边缘鳍片之间的中心鳍片。 蚀刻两个边缘翅片中的每一个的中间部分，并且中心翅片不被蚀刻。 栅极电介质形成在中心翅片的顶表面和侧壁上。 在栅极电介质上形成栅电极。 两个边缘翅片的端部和中心翅片的端部是凹进的。 进行外延以形成外延区域，其中由两个边缘翅片的端部留下的空间生长的外延材料与从中心翅片的端部留下的空间生长的外延材料合并，形成外延 地区。 源极/漏极区域形成在外延区域中。

公开(公告)号：US10243433B2

公开(公告)日：2019-03-26

申请号：US15884370

申请日：2018-01-30

Applicant: Tzu-Chiang Chen

Inventor： Tzu-Chiang Chen

IPC: H02K11/215 ,  F25B9/14 ,  F25B31/02 ,  H02K7/08 ,  H05K5/00

Abstract: A refrigerating machine having a detachable Hall element is provided with a cold heat exchange mechanism. The cold-heat exchange mechanism is driven by a driving assembly to generate a low temperature cooling zone at one end of the cold heat exchange mechanism. The driving assembly is composed of at least one rotor and a stator. After the power is input, the rotor can rotate a shaft to drive the cold-heat exchange mechanism to work. The driving assembly further has at least one Hall element and a circuit board on which the Hall element is mounted. Therefore, when the Hall element is damaged, the circuit board can be easily removed for replacement or repair.

公开(公告)号：US20130175638A1

公开(公告)日：2013-07-11

申请号：US13346411

申请日：2012-01-09

Applicant: Chia-Cheng Ho ,  Tzu-Chiang Chen ,  Yi-Tang Lin ,  Chih-Sheng Chang

Inventor： Chia-Cheng Ho ,  Tzu-Chiang Chen ,  Yi-Tang Lin ,  Chih-Sheng Chang

IPC: H01L27/088 ,  H01L21/336

CPC classification number: H01L29/785 ,  H01L29/66795

Abstract: A method includes forming a gate stack including a gate electrode on a first semiconductor fin. The gate electrode includes a portion over and aligned to a middle portion of the first semiconductor fin. A second semiconductor fin is on a side of the gate electrode, and does not extend to under the gate electrode. The first and the second semiconductor fins are spaced apart from, and parallel to, each other. An end portion of the first semiconductor fin and the second semiconductor fin are etched. An epitaxy is performed to form an epitaxy region, which includes a first portion extending into a first space left by the etched first end portion of the first semiconductor fin, and a second portion extending into a second space left by the etched second semiconductor fin. A first source/drain region is formed in the epitaxy region.

Abstract translation: 一种方法包括在第一半导体鳍上形成包括栅电极的栅叠层。 栅极电极包括在第一半导体鳍片的中间部分上并对准的部分。 第二半导体鳍片位于栅电极的一侧，并且不延伸至栅电极下方。 第一和第二半导体散热片彼此间隔开并平行。 蚀刻第一半导体鳍片和第二半导体鳍片的端部。 进行外延以形成外延区域，其包括延伸到由第一半导体鳍片的蚀刻的第一端部分留下的第一空间的第一部分和延伸到由蚀刻的第二半导体鳍留下的第二空间的第二部分。 在外延区域形成第一源极/漏极区域。

公开(公告)号：US20090073071A1

公开(公告)日：2009-03-19

申请号：US11856207

申请日：2007-09-17

Applicant: Tzu-Chiang CHEN ,  Wen-Kuan SU

Inventor： Tzu-Chiang CHEN ,  Wen-Kuan SU

IPC: H01Q9/22

CPC classification number: H01Q9/40 ,  H01Q9/285 ,  H01Q21/08

Abstract: A dual broadband dipole array antenna has a grounding structure, a circuit module and two feeding boards. The grounding structure is a conductive hexagonal container with two open ends and has two opposite parallel panels. The circuit module is a transmitting antenna module, is phase reversible and has two feeding wires. The feeding wires of the circuit module are respectively mounted centrally through the parallel panels and each feeding wire is electrically connected to the corresponding feeding board. When in use, the dual broadband dipole array antenna transmits signals covering EGSM900 (880-960 MHz), GSM1800 (1710-1880 MHz) and PCS (1820-1970 MHz).

Abstract translation: 双宽带偶极阵列天线具有接地结构，电路模块和两个馈电板。 接地结构是具有两个开口端的导电六角形容器，并具有两个相对的平行面板。 电路模块是发射天线模块，是相位可逆的，并具有两根馈电线。 电路模块的馈线分别通过平行面板安装在中心，每根馈线与相应的馈电板电连接。 在使用中，双宽带偶极阵列天线传输覆盖EGSM900（880-960 MHz），GSM1800（1710-1880 MHz）和PCS（1820-1970 MHz）的信号。

公开(公告)号：US20180364397A1

公开(公告)日：2018-12-20

申请号：US16008814

申请日：2018-06-14

Applicant: Tzu-Chiang Chen

Inventor： Le-Yen Chang

IPC: G02B1/115

CPC classification number: G02B1/115 ,  G02B5/281

Abstract: A long-wave infrared anti-reflective laminate includes a silicon substrate and an anti-reflective composite layer. The anti-reflective composite layer is disposed on the silicon substrate and has at least one first anti-reflective membrane. The at least one first anti-reflective membrane includes a first silicon nitride layer and a first silicon dioxide layer. The first silicon nitride layer is disposed between the silicon substrate and the first silicon dioxide layer. The thickness ratio of the first silicon nitride layer to the first silicon dioxide layer ranges from 175 to 225. The anti-reflective composite layer can be applied on the optical instrument to raise the transmitting rate of the silicon substrate. The transmitting rate of the long-wave infrared anti-reflective laminate is over 90% within the wave band from 8 μm to 12 μm.

公开(公告)号：US20180360152A1

公开(公告)日：2018-12-20

申请号：US16002090

申请日：2018-06-07

Applicant: Tzu-Chiang Chen

Inventor： Le-Yen Chang

IPC: A42B3/04 ,  G03B17/56 ,  A45F5/02

CPC classification number: A42B3/042 ,  A45F5/02 ,  A45F2005/025 ,  A45F2200/0533 ,  G03B17/561

Abstract: The helmet has a cap, and a turning assembly and a fastening device assembled on the cap. The helmet is formed as an integral whole and has a simplified and compact structure. A camera is mounted to the fastening device and is held by a lower holder and an upper holder of the turning assembly. A locking panel of the fastening device allows the camera to be easily and quickly mounted onto the cap via the fastening device or removed from the fastening device. With a locking member engaging in or disengaging from one of multiple engaging recesses of a corresponding guiding rod of the turning assembly, a position of the camera relative to the cap can be also easily and quickly adjusted.