CURRENT SOURCE ARRAY
    2.
    发明申请
    CURRENT SOURCE ARRAY 有权
    当前来源阵列

    公开(公告)号:US20150137874A1

    公开(公告)日:2015-05-21

    申请号:US14547684

    申请日:2014-11-19

    Abstract: A Silicon On Insulator current source array includes input control for receiving a control voltage, a first reference input for receiving a first reference voltage, and a second reference input for receiving a second reference voltage. A chain of several Silicon On Insulator MOS transistors, of the same type, have control electrodes all connected to the input control, first conduction electrodes are all connected to the first reference input, and second conduction electrodes are respectively connected to the second reference input through several load circuits respectively configured to be traversed by several currents when the several transistors are ON upon application of the control voltage on the input control. An input bias is coupled to a semiconductor well located below an insulating buried layer located below the chain of transistors for receiving a biasing voltage difference.

    Abstract translation: 硅绝缘体电流源阵列包括用于接收控制电压的输入控制,用于接收第一参考电压的第一参考输入和用于接收第二参考电压的第二参考输入。 具有相同类型的多个绝缘体硅MOS晶体管的链条具有全部连接到输入控制的控制电极,第一导电电极全部连接到第一参考输入,第二导电电极分别连接到第二参考输入 当在输入控制上施加控制电压时,当几个晶体管导通时,多个负载电路分别被配置为被几个电流穿过。 输入偏置耦合到位于晶体管链下方的绝缘掩埋层下方的半导体阱,用于接收偏置电压差。

    Current source array
    4.
    发明授权
    Current source array 有权
    电流源数组

    公开(公告)号:US09455689B2

    公开(公告)日:2016-09-27

    申请号:US14547684

    申请日:2014-11-19

    Abstract: A Silicon On Insulator current source array includes input control for receiving a control voltage, a first reference input for receiving a first reference voltage, and a second reference input for receiving a second reference voltage. A chain of several Silicon On Insulator MOS transistors, of the same type, have control electrodes all connected to the input control, first conduction electrodes are all connected to the first reference input, and second conduction electrodes are respectively connected to the second reference input through several load circuits respectively configured to be traversed by several currents when the several transistors are ON upon application of the control voltage on the input control. An input bias is coupled to a semiconductor well located below an insulating buried layer located below the chain of transistors for receiving a biasing voltage difference.

    Abstract translation: 硅绝缘体电流源阵列包括用于接收控制电压的输入控制,用于接收第一参考电压的第一参考输入和用于接收第二参考电压的第二参考输入。 具有相同类型的多个绝缘体硅MOS晶体管的链条具有全部连接到输入控制的控制电极,第一导电电极全部连接到第一参考输入,第二导电电极分别连接到第二参考输入 当在输入控制上施加控制电压时,当几个晶体管导通时,多个负载电路分别被配置为被几个电流穿过。 输入偏置耦合到位于晶体管链下方的绝缘掩埋层下方的半导体阱,用于接收偏置电压差。

    A Molecule Printing Device for the Analysis of the Secretome of Single Cells

    公开(公告)号:US20200016591A1

    公开(公告)日:2020-01-16

    申请号:US16465686

    申请日:2017-12-14

    Abstract: The present invention discloses a device and methods for the analysis of secreted molecules from a single cell. As described herein, the invention incorporates individual microwells with a bottom surface capable of capturing a cell and allows the release of secreted molecules to be printed onto a capture surface. The device provides accurate identification of the cell source of the printed molecules by mapping the printed molecules to the cell source. The invention further employs spectrometry, immunoassay or label free Surface Plasmon Resonance imaging for detection of the secreted molecules in combination with a microwell array, where single cells are seeded in individual microwells and the secreted molecules are captured by the capture surface in an array print while the cell remains in the microwell for additional interrogation. The present invention has applications in medical research and diagnosis where individual target cells in a fluid sample are interrogated for the secreted products.

Patent Agency Ranking