摘要:
Apparatuses and methods for synthesizing nanoscale materials are provided, including semiconductor nanowires. Precursor solutions include mixed reagent precursor solutions of metal and chalcogenide precursors and a catalyst, where such solutions are liquid at room temperature. The precursor solutions are mixed by dividing a solution flow into multiple paths and converging the paths to form a uniform solution. A thermally controlled reactor receives the uniform solution to form semiconductor nanowires. Various electronic, optical, and sensory devices may employ the semiconductor nanowires described herein, for example.
摘要:
The present disclosure provides systems, processes, articles of manufacture, and compositions that relate to core/shell semiconductor nanowires. Specifically, the disclosure provides a novel semiconductor material, CdSe/ZnS core/shell nanowires, as well as a method of preparation thereof. The disclosure also provides a new continuous flow method of preparing core/shell nanowires, including CdSe/CdS core/shell nanowire and CdSe/ZnS core/shell nanowires.
摘要:
Apparatuses and methods for synthesizing nanoscale materials are provided, including semiconductor nanowires. Precursor solutions include mixed reagent precursor solutions of metal and chalcogenide precursors and a catalyst, where such solutions are liquid at room temperature. The precursor solutions are mixed by dividing a solution flow into multiple paths and converging the paths to form a uniform solution. A thermally controlled reactor receives the uniform solution to form semiconductor nanowires. Various electronic, optical, and sensory devices may employ the semiconductor nanowires described herein, for example.
摘要:
The present disclosure provides systems, processes, articles of manufacture, and compositions that relate to core/shell semiconductor nanowires. Specifically, the disclosure provides a novel semiconductor material, CdSe/ZnS core/shell nanowires, as well as a method of preparation thereof. The disclosure also provides a new continuous flow method of preparing core/shell nanowires, including CdSe/CdS core/shell nanowire and CdSe/ZnS core/shell nanowires.