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    Complexing agent for treating metallic and plastic surfaces
    3.
    发明申请
    Complexing agent for treating metallic and plastic surfaces 审中-公开
    用于处理金属和塑料表面的络合剂

    公开(公告)号：US20050209117A1

    公开(公告)日：2005-09-22

    申请号：US10518447

    申请日：2003-06-18

    申请人： Ralf Friedrich ,  Werner Hesse ,  Hans-Ulrich Jager ,  Helmut Witteler

    发明人： Ralf Friedrich ,  Werner Hesse ,  Hans-Ulrich Jager ,  Helmut Witteler

    IPC分类号： C09K3/00 ,  C08G73/02 ,  C08J7/04 ,  C08K3/24 ,  C08K3/30 ,  C08K3/32 ,  C09D179/02 ,  C23C18/20 ,  C23C18/36 ,  C23C18/40 ,  C25D3/02 ,  C25D3/22 ,  C25D3/38 ,  C25D3/48 ,  C25F1/00 ,  H05K3/18 ,  C11D1/00

    CPC分类号： C08J7/047 ,  C08G73/0233 ,  C08J2479/00 ,  C08K3/24 ,  C08K3/30 ,  C08K3/32 ,  C09D179/02 ,  C23C18/2006 ,  C23C18/2073 ,  C23C18/285 ,  C23C18/30 ,  C23C18/36 ,  C23C18/405 ,  C25D3/02 ,  C25D3/22 ,  C25D3/38 ,  C25D3/48 ,  C25F1/00 ,  H05K3/181 ,  C08L79/08

    摘要： A composition for the surface treatment of metals and for the deposition of metals or metal alloys and plastics surfaces comprises a) at least one polymer as component A, comprising at least one structural unit of the formula (I)  where this structural unit may be part of a polymer main chain or may be bound to a polymer main chain via an anchor group, and  M is hydrogen or an ammonium or metal cation; b) water or another solvent which is suitable for dissolving, dispersing, suspending or emulsifying the polymer (component A), as component B; c) if required, surface-active compounds, dispersants, suspending media and/or emulsifiers as component C;  either d) if required, a salt, an acid or a base based on transition metal cations, transition metal oxoanions, fluorometallates or lanthanoids as component D, and/or e) at least one acid selected from the group consisting of phosphoric acid, sulfuric acid, sulfonic acid, nitric acid, hydrofluoric acid and hydrochloric acid as component E, or a base and/or f) at least one metal oxide and/or metal salt as component F. Furthermore, in a process for the surface treatment of metals and in a process for the deposition of metals or metal alloys on a metal surface or plastics surface, the metal surface or plastics surface is brought into contact with a polymer (component A). Moreover, polymers (component A) are used for the surface treatment of metals and for the deposition of metals or metal alloys on a metal surface or plastics surface.

    摘要翻译： 用于表面处理金属和金属或金属合金和塑料表面沉积的组合物包括a）至少一种作为组分A的聚合物，其包含至少一种式（I）的结构单元，其中该结构单元可以是部分 的聚合物主链，或者可以通过锚定基团与聚合物主链结合，M是氢或铵或金属阳离子; b）适于溶解，分散，悬浮或乳化聚合物（组分A）的水或其它溶剂作为组分B; c）如果需要，表面活性化合物，分散剂，悬浮介质和/或乳化剂作为组分C; d）如果需要，基于过渡金属阳离子，过渡金属氧代阴离子，氟金属盐或镧系元素作为组分D的盐，酸或碱，和/或e）至少一种选自磷酸，硫酸 酸，磺酸，硝酸，氢氟酸和盐酸作为组分E，或碱和/或f）至少一种作为组分F的金属氧化物和/或金属盐。此外，在金属表面处理方法 并且在金属表面或塑料表面上沉积金属或金属合金的过程中，金属表面或塑料表面与聚合物（组分A）接触。 此外，聚合物（组分A）用于金属表面处理和金属或金属合金在金属表面或塑料表面上的沉积。

    Use of modified polyaspartic acids in washing agents
    5.
    发明授权
    Use of modified polyaspartic acids in washing agents 失效
    在洗涤剂中使用改性聚天冬氨酸

    公开(公告)号：US6001798A

    公开(公告)日：1999-12-14

    申请号：US29247

    申请日：1998-03-04

    申请人： Richard Baur ,  Werner Bertleff ,  Hans-Ulrich Jager ,  Angelika Funhoff ,  Matthias Kroner ,  Gunnar Schornick

    发明人： Richard Baur ,  Werner Bertleff ,  Hans-Ulrich Jager ,  Angelika Funhoff ,  Matthias Kroner ,  Gunnar Schornick

    IPC分类号： C08G69/36 ,  C08G73/06 ,  C08G73/10 ,  C11D3/37 ,  C11D17/00

    CPC分类号： C08G73/1092 ,  C11D3/3719

    摘要： The use of modified polyaspartic acids which are obtainable by polycondensation of aspartic acid in the presence of, in each case based on the aspartic acid employed,(a) 2.5 to 25 mol % of amines with at least 6 carbon atoms(b) at least 2% by weight of phosphoric acid, phosphorous acid, hypophosphorous acid, polyphosphoric acids, phosphorus pentoxide, phosphonic acids or mixtures of said acids,at temperatures of at least 120.degree. C. and subsequent hydrolysis with bases to give modified polyaspartic acids with a phosphorus content of from 0.5 to 10% by weight, as additive to detergents, and detergents which contain the modified polyaspartic acids in amounts of from 0.1 to 20% by weight.

    摘要翻译： PCT No.PCT / EP96 / 03797 371日期：1998年3月4日 102（e）1998年3月4日PCT PCT 1996年8月29日PCT公布。 出版物WO97 / 09409 日期1997年3月13日使用通过天冬氨酸缩聚获得的改性聚天冬氨酸，在每种情况下，基于所使用的天冬氨酸，（a）2.5至25mol％具有至少6个碳原子的胺 （b）在至少120℃的温度下至少2重量％的磷酸，亚磷酸，次磷酸，多磷酸，五氧化二磷，膦酸或所述酸的混合物，随后用碱水解，得到改性的 磷含量为0.5〜10重量％的聚天冬氨酸，作为洗涤剂的添加剂，以及含有0.1〜20重量％的改性聚天冬氨酸的洗涤剂。

    Dye transfer inhibitors for detergents
    6.
    发明授权
    Dye transfer inhibitors for detergents 失效
    用于洗涤剂的染料转移抑制剂

    公开(公告)号：US5830844A

    公开(公告)日：1998-11-03

    申请号：US750478

    申请日：1996-12-17

    申请人： Jurgen Detering ,  Christian Schade ,  Johannes Perner ,  Hans-Ulrich Jager

    发明人： Jurgen Detering ,  Christian Schade ,  Johannes Perner ,  Hans-Ulrich Jager

    IPC分类号： C11D3/00 ,  C11D3/37

    CPC分类号： C11D3/0021 ,  C11D3/3776

    摘要： Water-insoluble, crosslinked polymers containing polymerized units of 1-vinylpyrrolidone and/or 1-vinylimidazoles of the formula ##STR1## where R, R.sup.1 and R.sup.2 are identical or different and each is hydrogen, C.sub.1 -C.sub.4 -alkyl or phenyl, or of 4-vinylpyridine N-oxide, in finely divided form, at least 90% by weight of the polymers having a particle size from 0.1 to 500 .mu.m, are useful as detergent additives for inhibiting the transfer of dye during the wash.

    摘要翻译： PCT No.PCT / EP95 / 02111 Sec。 371日期：1996年12月17日 102（e）日期1996年12月17日PCT提交1995年6月3日PCT公布。 出版物WO95 / 35360 日期1995年12月28日含有式（I）的1-乙烯基吡咯烷酮和/或1-乙烯基咪唑的聚合单元的水不溶性交联聚合物，其中R，R 1和R 2相同或不同，各自为氢，C1- C4-烷基或苯基，或4-乙烯基吡啶N-氧化物，以细碎形式，至少90重量％的粒径为0.1至500μm的聚合物可用作抑制转移的洗涤剂添加剂 洗涤期间染色。

    Radiation-curable acrylates with built-in photoinitiators
    7.
    发明授权
    Radiation-curable acrylates with built-in photoinitiators 失效
    具有内置光引发剂的可辐射固化的丙烯酸酯

    公开(公告)号：US5741829A

    公开(公告)日：1998-04-21

    申请号：US674832

    申请日：1996-07-03

    申请人： Wolfgang Reich ,  Erich Beck ,  Ulrich Jager ,  Reinhold Schwalm

    发明人： Wolfgang Reich ,  Erich Beck ,  Ulrich Jager ,  Reinhold Schwalm

    IPC分类号： C07C68/02 ,  C07C69/96 ,  C08F2/48 ,  C08F2/50 ,  C08F20/26 ,  C08F20/28 ,  C08G00/00 ,  C08F18/24

    CPC分类号： C07C69/96 ,  Y10S522/905

    摘要： Radiation-curable (meth)acrylates obtainable by reacting compounds of the formula ##STR1## in which R is C.sub.1 -C.sub.4 -alkyl, aryl or R.sup.1 and R.sup.1 is ##STR2## in which R.sup.2 to R.sup.6 independently of one another are H, C.sub.1 -C.sub.4 -alkyl, C.sub.1 -C.sub.4 -alkoxy, OH, phenyl, SH, SCH.sub.3, SC.sub.2 H.sub.5, F, Cl, Br, CN, COOH, COO--(C.sub.1 -C.sub.17 -alkyl), COO--(C.sub.5 -C.sub.10 -aryl), CF.sub.3, N(alkyl).sub.2, N(alkyl)(aryl), N(aryl).sub.2, N.sup..sym. (alkyl).sub.3 A.sup..crclbar., N.sup..sym. H(alkyl).sub.2 A.sup..crclbar., A.sup..crclbar. is the anion of an acid, and alkyl or aryl, unless indicated otherwise, is C.sub.1 -C.sub.10 -alkyl or C.sub.5 -C.sub.10 -aryl, respectively, and at least one but not more than 3 of R.sup.2 to R.sup.6 are ##STR3## with hydroxy(meth)acrylates containing at least 1 free hydroxyl group and at least 2 (meth)acrylic groups in the molecule.

    摘要翻译： 其中R为C 1 -C 4 - 烷基，芳基或R 1和R 1的式Ⅰ'化合物是其中R 2至R 6彼此独立地为H的可辐射固化（甲基）丙烯酸酯， C 1 -C 4烷基，C 1 -C 4 - 烷氧基，OH，苯基，SH，SCH 3，SC 2 H 5，F，Cl，Br，CN，COOH，COO-（C 1 -C 17 - 烷基） ），CF 3，N（烷基）2，N（烷基）（芳基），N（芳基）2，N（+）（烷基）3A（ - ），N（+）H （ - ）是酸的阴离子，除非另有说明，烷基或芳基分别为C 1 -C 10 - 烷基或C 5 -C 10 - 芳基，并且至少一个但不多于3个R 2至R 6为

    Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell
    8.
    发明授权
    Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell 有权
    为了制造光伏太阳能电池，在半导体衬底中制造选择性掺杂结构的方法

    公开(公告)号：US08927317B2

    公开(公告)日：2015-01-06

    申请号：US13805111

    申请日：2011-06-16

    申请人： Ulrich Jager ,  Daniel Biro ,  Anne-Kristin Volk ,  Johannes Seiffe ,  Sebastian Mack ,  Andreas Wolf ,  Ralf Preu

    发明人： Ulrich Jager ,  Daniel Biro ,  Anne-Kristin Volk ,  Johannes Seiffe ,  Sebastian Mack ,  Andreas Wolf ,  Ralf Preu

    IPC分类号： H01L31/18 ,  H01L21/225 ,  H01L21/268 ,  H01L31/0224 ,  H01L31/068

    CPC分类号： H01L31/18 ,  H01L21/2254 ,  H01L21/268 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547

    摘要： A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.

    摘要翻译： 一种用于在半导体衬底中产生选择性掺杂结构的方法，以便产生光伏太阳能电池。 该方法包括以下步骤：A）将掺杂层（2）施加到半导体衬底的发射极侧，B）局部加热掺杂层（2）的熔化区域和位于半导体衬底下方的半导体衬底的熔化区域 掺杂层（2），使得掺杂剂通过液 - 液扩散从掺杂层（2）扩散到熔融的半导体衬底中，使得在熔融混合物固化后产生高掺杂区域（3），C）产生 通过全面加热半导体衬底，平面低掺杂区域，D）去除掺杂层（2），以及E）以掺杂侧的半导体衬底的一部分去除或转换半导体衬底的一部分， 靠近表面的高掺杂区域被去除或被转换成不导电的层。

    METHOD FOR LCOAL HIGH-DOPING AND CONTACTING OF A SEMICONDUCTOR STRUCTURE WHICH COMPRISES A SOLAR CELL OR A PRECURSOR OF A SOLAR CELL
    9.
    发明申请
    METHOD FOR LCOAL HIGH-DOPING AND CONTACTING OF A SEMICONDUCTOR STRUCTURE WHICH COMPRISES A SOLAR CELL OR A PRECURSOR OF A SOLAR CELL 有权

    公开(公告)号：US20120301995A1

    公开(公告)日：2012-11-29

    申请号：US13575446

    申请日：2011-01-18

    申请人： Dominik Suwito ,  Jan Benick ,  Ulrich Jager

    发明人： Dominik Suwito ,  Jan Benick ,  Ulrich Jager

    IPC分类号： H01L31/0232

    CPC分类号： H01L31/1804 ,  H01L21/268 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/061 ,  Y02E10/547 ,  Y02P70/521

    摘要： The invention relates to a method for local high-doping and contacting of a semiconductor structure which is a solar cell or a precursor of a solar cell and has a silicon semiconductor substrate (1) of a base doping type. The high-doping and contacting is effected by producing a plurality of local high-doping regions of the base doping type in the semiconductor substrate (1) on a contacting side (1a) of the semiconductor substrate and applying a metal contacting layer (7) to the contacting side (1a) or, if applicable, one or more intermediate layers wholly or partially covering the contacting side (1a), to form electrically conductive connections between the metal contacting layer (7) and the semiconductor substrate (1) at the high doping regions. It is important that the method comprises the following steps: A) producing a layer structure covering the contacting side (1 a) of the semiconductor substrate, comprising a doping layer (3), which contains a dopant of the base doping type and is in the form of a layer of amorphous silicon or a layer of amorphous silicon carbide having a carbon content less than 10 at. % and a reflective layer (4), which at least in the wavelength range between 800 nm and 1200 nm is constructed with a refractive index nR smaller than the refractive index nHs of the semiconductor substrate, wherein the doping layer (3) lying in the layer sequence closer to the contacting side (1 a) is constructed as the reflective layer (4); B) local heating of layer structure and the surface lying thereunder of the semiconductor substrate at a plurality of zones to form local high-doping regions, wherein the local heating is effected such that at each of the locally heated regions a melt mixture of at least the doping layer (3) and a portion of the semiconductor substrate is formed locally on the contacting side (1 a), and on solidification of the melt mixture a high doping region (6) more strongly doped by at least the dopant of the doping layer (3) is formed in the semiconductor substrate (1) on the contacting side (1 a), and applying a metal contacting layer (7) to form an electrically conductive connection between semiconductor substrate (1) and contacting layer (7) at the high-doping regions.