-
公开(公告)号：US20140218122A1
公开(公告)日：2014-08-07
申请号：US14232188
申请日：2012-07-12
申请人： Nicolas Locatelli , Bruno Marccilhac , Jean-Claude Mage , Vincent Cros , Alexey Vasilyevich Khvalkovskiy , Julie Grollier
发明人： Nicolas Locatelli , Bruno Marccilhac , Jean-Claude Mage , Vincent Cros , Alexey Vasilyevich Khvalkovskiy , Julie Grollier
IPC分类号： H03B15/00
CPC分类号： H03B15/006 , H03C3/0958 , H03L7/26
摘要： An oscillator is provided including a nanopillar and current injector for injecting a power supply current through the nanopillar, the nanopillar including at least one pattern including first and second layers made from a ferromagnetic material separated from each other by an intermediate layer made from a non-magnetic material. Each of the first and second ferromagnetic layers is prepared such that its remanent magnetic configuration corresponds to a vortex configuration and the polarity of the vortex core of the first layer is opposite the polarity of the vortex core of the second layer. The intermediate layer can allow repellant magnetic coupling between the two vortices of the first and second layers, for a zero intensity of the power supply current and a zero amplitude of the outside magnetic field.
摘要翻译： 提供了一种振荡器，包括纳米柱和电流注入器，用于注入通过纳米柱的电源电流，所述纳米柱包括至少一个图案，所述至少一个图案包括由铁磁材料制成的第一和第二层，所述铁磁材料通过由非磁性材料制成的中间层彼此分离， 磁性材料。 制备第一和第二铁磁层中的每一个使得其剩余磁性构型对应于涡流构型，并且第一层的涡流核心的极性与第二层的涡流核心的极性相反。 中间层可以允许第一和第二层的两个涡流之间的驱动磁耦合，用于电源电流的零强度和外部磁场的零幅度。
-
公开(公告)号：US09461586B2
公开(公告)日：2016-10-04
申请号：US14232188
申请日：2012-07-12
申请人： Nicolas Locatelli , Bruno Marcilhac , Jean-Claude Mage , Vincent Cros , Alexey Vasilyevich Khvalkovskiy , Julie Grollier
发明人： Nicolas Locatelli , Bruno Marcilhac , Jean-Claude Mage , Vincent Cros , Alexey Vasilyevich Khvalkovskiy , Julie Grollier
CPC分类号： H03B15/006 , H03C3/0958 , H03L7/26
摘要： An oscillator is provided including a nanopillar and current injector for injecting a power supply current through the nanopillar, the nanopillar including at least one pattern including first and second layers made from a ferromagnetic material separated from each other by an intermediate layer made from a non-magnetic material. Each of the first and second ferromagnetic layers is prepared such that its remanent magnetic configuration corresponds to a vortex configuration and the polarity of the vortex core of the first layer is opposite the polarity of the vortex core of the second layer. The intermediate layer can allow repellant magnetic coupling between the two vortices of the first and second layers, for a zero intensity of the power supply current and a zero amplitude of the outside magnetic field.
摘要翻译： 提供了一种振荡器，包括纳米柱和电流注入器，用于注入通过纳米柱的电源电流，所述纳米柱包括至少一个图案，所述至少一个图案包括由铁磁材料制成的第一和第二层，所述铁磁材料通过由非磁性材料制成的中间层彼此分离， 磁性材料。 制备第一和第二铁磁层中的每一个使得其剩余磁性构型对应于涡流构型，并且第一层的涡流核心的极性与第二层的涡流核心的极性相反。 中间层可以允许第一和第二层的两个涡流之间的驱动磁耦合，用于电源电流的零强度和外部磁场的零幅度。
-
3.发明授权Memristor device with resistance adjustable by moving a magnetic wall by spin transfer and use of said memristor in a neural network 有权具有电阻调节器的忆阻器通过在神经网络中通过旋转传递和使用所述忆阻器移动磁壁来调节公开(公告)号：US09070455B2
公开(公告)日：2015-06-30
申请号：US13318119
申请日：2010-04-30
CPC分类号： G11C11/16 , G11C11/14 , G11C11/161 , G11C11/1675 , G11C11/54
摘要： A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers.
摘要翻译： 具有可调电阻的器件包括由绝缘或半导体元件隔开的两个磁性元件。 器件的电阻取决于一个磁性元件中的磁性壁的位置，磁性壁分离所述磁性元件的每个具有单独的均匀磁化方向的两个区域。 该装置包括用于通过施加自旋极化电流来移动磁性元件中的磁壁的装置，使得装置的电阻在连续的值范围内是可调节的。 本发明在神经模拟电路，神经网络和生物启发计算机中是有用的。
-
4.发明申请Memristor Device with Resistance Adjustable by Moving a Magnetic Wall by Spin Transfer and Use of Said Memristor in a Neural Network 有权具有阻力的忆阻器可以通过旋转移动磁壁和在神经网络中使用所述忆阻器来调节公开(公告)号：US20120163069A1
公开(公告)日：2012-06-28
申请号：US13318119
申请日：2010-04-30
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/14 , G11C11/161 , G11C11/1675 , G11C11/54
摘要： A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers.
摘要翻译： 具有可调电阻的装置包括由绝缘或半导体元件隔开的两个磁性元件。 器件的电阻取决于一个磁性元件中的磁性壁的位置，磁性壁分离所述磁性元件的每个具有单独的均匀磁化方向的两个区域。 该装置包括用于通过施加自旋极化电流来移动磁性元件中的磁壁的装置，使得装置的电阻在连续的值范围内是可调节的。 本发明在神经模拟电路，神经网络和生物启发计算机中是有用的。
-
5.发明申请SPINTRONIC DEVICE WITH CONTROL BY DOMAIN WALL DISPLACEMENT INDUCED BY A CURRENT OF SPIN-POLARIZED CARRIERS 有权由旋转极化载波电流引起的域壁偏移控制的旋转装置公开(公告)号：US20090273421A1
公开(公告)日：2009-11-05
申请号：US11721950
申请日：2005-12-14
IPC分类号： H01F7/02
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1675 , G11C19/0808 , H01L43/08
摘要： The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.
摘要翻译： 本发明的一般领域是自旋电子学领域，即使用电子的磁自旋特性的电子领域。 主要应用领域是信息的非常大规模的磁存储和局部磁场的测量。 本发明的目的是显着地减少用亚微米尺寸的铁磁元件的磁畴反转所需的能量，这是通过仅由自旋极化载流子的电流或由自旋极化载流子的电流引起的畴壁位移的机制 自旋极化载流子的电流和磁场，其中至少一个是可变的。 该畴壁位移导致在特定开关区域中的磁极化的变化。 描述根据本发明的几个装置，其具有根据本发明的从一个切换区段到多个切换区域。
-
6.发明授权Spintronic device with control by domain wall displacement induced by a current of spin-polarized carriers 有权由自旋极化载流子电流引起的由畴壁位移控制的自旋电子器件公开(公告)号：US07969762B2
公开(公告)日：2011-06-28
申请号：US11721950
申请日：2005-12-14
IPC分类号： G11C19/00
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1675 , G11C19/0808 , H01L43/08
摘要： The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.
摘要翻译： 本发明的一般领域是自旋电子学领域，即使用电子的磁自旋特性的电子领域。 主要应用领域是信息的非常大规模的磁存储和局部磁场的测量。 本发明的目的是显着地减少用亚微米尺寸的铁磁元件的磁畴反转所需的能量，这是通过仅由自旋极化载流子的电流或由自旋极化载流子的电流引起的畴壁位移的机制 自旋极化载流子的电流和磁场，其中至少一个是可变的。 该畴壁位移导致在特定开关区域中的磁极化的变化。 描述根据本发明的几个装置，其具有根据本发明的从一个切换区段到多个切换区域。
-
7.发明授权Control device for reversing the direction of magnetisation without an external magnetic field 有权用于在没有外部磁场的情况下反转磁化方向的控制装置公开(公告)号：US07459998B2
公开(公告)日：2008-12-02
申请号：US10484381
申请日：2002-07-26
申请人： Frédéric Nguyen Van Dau , Vincent Cros , Jean-Marie George , Julie Grollier , Henri Jaffres , Frédéric Petroff
发明人： Frédéric Nguyen Van Dau , Vincent Cros , Jean-Marie George , Julie Grollier , Henri Jaffres , Frédéric Petroff
IPC分类号： H01F7/02
CPC分类号： B82Y25/00 , G11C11/16 , H01F10/3268 , H01F10/3281 , H01F10/329
摘要： The disclosure relates to a device for controlling magnetization reversal in a controlled ferromagnetic system such as a magnetic memory element, without using an external magnetic field, wherein it comprises between two flat electrodes a magnetic control part comprising, starting from the first electrode, a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer, and the second of said two flat electrodes, the thickness of said second ferromagnetic layer being less than that of said first layer, and the thickness of said second electrode being sufficiently small to enable magnetic coupling between said second ferromagnetic layer and the system controlled by the control device.
摘要翻译： 本公开涉及一种用于控制诸如磁存储元件的受控铁磁系统中的磁化反转的装置，而不使用外部磁场，其中它包括在两个平面电极之间，磁性控制部分包括从第一电极开始的第一 铁磁层，非磁性层和第二铁磁层，并且所述两个平面电极中的第二个，所述第二铁磁层的厚度小于所述第一层的厚度，并且所述第二电极的厚度足够小 以实现所述第二铁磁层与由控制装置控制的系统之间的磁耦合。
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.012 秒)
