公开(公告)号：US20080181838A1

公开(公告)日：2008-07-31

申请号：US12023475

申请日：2008-01-31

申请人： WON-BONG CHOI ,  Young-hee Lee

发明人： WON-BONG CHOI ,  Young-hee Lee

IPC分类号： C01B31/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/168 ,  C01B32/174 ,  C01B2202/22 ,  H01L51/0048 ,  H01L51/0512

摘要： Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes may be applied and used in, for example, electronic devices, optoelectronic devices, and energy storage.

摘要翻译： 由氢功能化的半导体碳纳米管及其制造方法，其中功能氢化半导体碳纳米管具有碳原子和氢原子之间的化学键。 半导体碳纳米管制造方法包括在真空中加热碳纳米管，将氢气中的氢分子解离成氢原子，将碳纳米管暴露于氢气，形成碳纳米管的碳原子和氢原子之间的化学键。 使用该方法可以实现将金属碳纳米管转化为半导体纳米管和具有相对较窄的能带隙的半导体纳米管，具有相对宽的能带隙的半导体纳米管。 功能性氢化半导体碳纳米管可以应用于例如电子器件，光电器件和能量存储器中。

公开(公告)号：US07405126B2

公开(公告)日：2008-07-29

申请号：US11879503

申请日：2007-07-18

申请人： Won-bong Choi ,  Soo-doo Chae

发明人： Won-bong Choi ,  Soo-doo Chae

IPC分类号： H01L21/8247

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/7883 ,  Y10S977/943

摘要： Provided is a memory device formed using quantum devices and a method for manufacturing the same. A memory device includes a substrate; a source region and a drain region formed in the substrate so as to be separated from each other by a predetermined interval. A memory cell is formed on the surface of the substrate to connect the source region and the drain region, and has a plurality of nano-sized quantum dots filled with material for storing electrons. A control gate is formed on the memory cell and controls the number of electrons stored in the memory cell. It is possible to embody a highly efficient and highly integrated memory device by providing a memory device having nano-sized quantum dots and a method for manufacturing the same.

摘要翻译： 提供了使用量子器件形成的存储器件及其制造方法。 存储器件包括衬底; 源极区域和漏极区域，形成在基板中，以便以预定间隔彼此分离。 在基板的表面上形成存储单元，以连接源极区域和漏极区域，并且具有填充有用于存储电子的材料的多个纳米尺寸的量子点。 控制栅极形成在存储单元上，并控制存储在存储单元中的电子数。 可以通过提供具有纳米尺寸量子点的存储器件及其制造方法来体现高效率和高度集成的存储器件。

公开(公告)号：US20060252276A1

公开(公告)日：2006-11-09

申请号：US11352310

申请日：2006-02-13

申请人： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

发明人： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

IPC分类号： H01L21/31

CPC分类号： B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  Y10S977/943

摘要： A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

摘要翻译： 一种由碳纳米管存储器件及其形成方法形成的快速，可靠，高度集成的存储器件，其中碳纳米管存储器件包括衬底，源电极，漏电极，具有高电的碳纳米管和 热导率，具有优异电荷存储能力的存储单元和栅电极。 源电极和漏电极在它们之间以预定间隔布置在衬底上并经受电压。 碳纳米管将源电极连接到漏电极并用作电荷运动的通道。 存储单元位于碳纳米管之上，并存储来自碳纳米管的电荷。 栅电极形成为与存储单元的上表面接触，并控制从碳纳米管流入存储单元的电荷量。

公开(公告)号：US06949793B2

公开(公告)日：2005-09-27

申请号：US10225431

申请日：2002-08-22

申请人： Won-bong Choi ,  Soo-doo Chae

发明人： Won-bong Choi ,  Soo-doo Chae

IPC分类号： H01L29/06 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/115 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/7883 ,  Y10S977/943

摘要： Provided is a memory device formed using quantum devices and a method for manufacturing the same. A memory device comprises a substrate; a source region and a drain region formed in the substrate so as to be separated from each other by a predetermined interval; a memory cell which is formed on the surface of the substrate to connect the source region and the drain region, and has a plurality of nano-sized quantum dots filled with material for storing electrons; and a control gate which is formed on the memory cell and controls the number of electrons stored in the memory cell. It is possible to embody a highly efficient and highly integrated memory device by providing a memory device having nano-sized quantum dots and a method for manufacturing the same.

摘要翻译： 提供了一种使用量子器件形成的存储器件及其制造方法。 存储器件包括衬底; 源极区域和漏极区域，形成在所述衬底中，以便以预定间隔彼此分离; 存储单元，其形成在所述基板的表面上，以连接所述源极区域和所述漏极区域，并且具有填充有用于存储电子的材料的多个纳米尺寸的量子点; 以及形成在存储单元上并控制存储在存储单元中的电子数的控制栅极。 通过提供具有纳米尺寸量子点的存储器件及其制造方法，可以实现高效率和高度集成的存储器件。

公开(公告)号：US06815294B2

公开(公告)日：2004-11-09

申请号：US10388450

申请日：2003-03-17

申请人： Won-bong Choi ,  Jo-won Lee ,  Young-hee Lee

发明人： Won-bong Choi ,  Jo-won Lee ,  Young-hee Lee

IPC分类号： H01L21336

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C2213/17 ,  H01L29/66439 ,  H01L29/775 ,  H01L51/0048 ,  H01L51/0508 ,  H01L51/057 ,  Y10S977/708 ,  Y10S977/723 ,  Y10S977/742 ,  Y10S977/843 ,  Y10S977/938

摘要： The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.

摘要翻译： 本发明提供使用能够实现高密度积分的碳纳米管的立式纳米尺寸晶体管，即Tera-bit规模集成及其制造方法，其中在使用碳纳米管的垂直纳米尺寸晶体管中，具有 几个纳米的直径形成在绝缘层中并以几纳米的间隔隔开。 碳纳米管通过化学气相沉积，电泳或机械压缩在纳米尺寸的孔中垂直排列以用作通道。 使用普通的半导体制造方法在碳纳米管附近形成栅极，然后在每个碳纳米管的下部和上部形成源极和漏极，从而制造具有电开关的垂直纳米尺寸晶体管 特性。

公开(公告)号：US06794666B2

公开(公告)日：2004-09-21

申请号：US10160102

申请日：2002-06-04

申请人： Won-bong Choi ,  In-kyeong Yoo

发明人： Won-bong Choi ,  In-kyeong Yoo

IPC分类号： G21G500

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  H01J3/022 ,  H01J2237/06341 ,  H01J2237/3175 ,  Y10S977/901

摘要： An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emission source by a predetermined distance and on which a sample is mounted, and wherein the electron emission source is a carbon nanotube having electron emission power. Since a carbon nanotube is used as an electron emission source, a lithography process can be performed with a precise critical dimension that prevents a deviation from occurring between the center of a substrate and the edge thereof and may realize a high throughput.

摘要翻译： 一种使用选择性生长的碳纳米管作为电子发射源的电子发射光刻设备和方法，其中电子发射光刻设备包括安装在室内的电子发射源和与电子发射源分离预定距离的电台 并且其上安装有样品，并且其中所述电子发射源是具有电子发射能力的碳纳米管。 由于使用碳纳米管作为电子发射源，可以以精确的临界尺寸进行光刻处理，从而防止在基板的中心与其边缘之间发生偏差，并且可以实现高生产率。

公开(公告)号：US20060237708A1

公开(公告)日：2006-10-26

申请号：US11327368

申请日：2006-01-09

申请人： Won-bong Choi ,  Young-hee Lee

发明人： Won-bong Choi ,  Young-hee Lee

IPC分类号： H01L29/06

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/168 ,  C01B32/174 ,  C01B2202/22 ,  H01L51/0048 ,  H01L51/0512

摘要： Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes may be applied and used in, for example, electronic devices, optoelectronic devices, and energy storage.

公开(公告)号：US07015500B2

公开(公告)日：2006-03-21

申请号：US10361024

申请日：2003-02-10

申请人： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

发明人： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

IPC分类号： H01B7/08 ,  H01L35/24

CPC分类号： B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  Y10S977/943

摘要： A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

摘要翻译： 一种由碳纳米管存储器件及其形成方法形成的快速，可靠，高度集成的存储器件，其中碳纳米管存储器件包括衬底，源电极，漏电极，具有高电的碳纳米管和 热导率，具有优异电荷存储能力的存储单元和栅电极。 源电极和漏电极在它们之间以预定间隔布置在衬底上并经受电压。 碳纳米管将源电极连接到漏电极并用作电荷运动的通道。 存储单元位于碳纳米管之上，并存储来自碳纳米管的电荷。 栅电极形成为与存储单元的上表面接触，并控制从碳纳米管流入存储单元的电荷量。

公开(公告)号：US06833567B2

公开(公告)日：2004-12-21

申请号：US10386536

申请日：2003-03-13

申请人： Won-bong Choi ,  Jo-won Lee ,  Young-hee Lee

发明人： Won-bong Choi ,  Jo-won Lee ,  Young-hee Lee

IPC分类号： H01L2974

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C2213/17 ,  H01L29/66439 ,  H01L29/775 ,  H01L51/0048 ,  H01L51/0508 ,  H01L51/057 ,  Y10S977/708 ,  Y10S977/723 ,  Y10S977/742 ,  Y10S977/843 ,  Y10S977/938

摘要： The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.

公开(公告)号：US07585584B2

公开(公告)日：2009-09-08

申请号：US10601872

申请日：2003-06-24

申请人： Won-bong Choi ,  Jae-uk Chu ,  Chan-ho Pak ,  Hyuk Chang

发明人： Won-bong Choi ,  Jae-uk Chu ,  Chan-ho Pak ,  Hyuk Chang

IPC分类号： H01M4/00

CPC分类号： H01M4/8605 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01M4/9083 ,  H01M4/926 ,  H01M2008/1095 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/72 ,  Y10S977/743 ,  Y10S977/843 ,  Y10S977/847

摘要： Carbon nanotubes for use in a fuel cell, a method for fabricating the same, and a fuel cell using the carbon nanotubes for its electrode are provided. The internal and external walls of the carbon nanotubes are doped with nano-sized metallic catalyst particles uniformly to a degree of 0.3-5 mg/cm2. The carbon nanotubes are grown over a carbon substrate using chemical vapor deposition or plasma enhanced chemical vapor deposition. Since the carbon nanotubes have a large specific surface area, and metallic catalyst particles are uniformly distributed over the internal and external walls thereof, the reaction efficiency in an electrode becomes maximal when the carbon nanotubes are used for the electrode of a fuel cell. The carbon nanotubes fabricated using the method can be applied to form a large electrode. The carbon nanotubes grown over the carbon substrate can be readily applied to an electrode of a fuel cell, providing economical advantages and simplifying the overall electrode manufacturing process. A fuel cell using as the carbon nanotubes for its electrode provides improved performance.

摘要翻译： 提供了用于燃料电池的碳纳米管，其制造方法和使用该碳纳米管作为其电极的燃料电池。 碳纳米管的内壁和外壁均匀掺杂有纳米尺寸的金属催化剂颗粒至0.3-5mg / cm2的程度。 使用化学气相沉积或等离子体增强化学气相沉积在碳衬底上生长碳纳米管。 由于碳纳米管具有大的比表面积，并且金属催化剂颗粒均匀地分布在其内壁和外壁上，所以当将碳纳米管用于燃料电池的电极时，电极中的反应效率最大。 使用该方法制造的碳纳米管可以应用于形成大电极。 生长在碳基板上的碳纳米管可以容易地应用于燃料电池的电极，提供经济的优点并简化整个电极的制造过程。 使用作为其电极的碳纳米管的燃料电池提供改进的性能。