公开(公告)号：US6111225A

公开(公告)日：2000-08-29

申请号：US125336

申请日：1998-08-14

申请人： Wataru Ohkase ,  Kazutsugu Aoki ,  Masaaki Hasei

发明人： Wataru Ohkase ,  Kazutsugu Aoki ,  Masaaki Hasei

IPC分类号： H01L21/00 ,  F27B5/14

CPC分类号： H01L21/67109

摘要： A thermal processing apparatus for a semi-conductor wafer. A holder is provided within a processing vessel on which the wafer to be processed is placed. Upper and lower heaters are provided above and below the holder in order to heat the wafer. Each of the heaters are attached within heating vessels. A gas supply head supplies a processing gas in a shower form between the upper heater and the holder. The uniformity of the surface temperature of the wafer is improved by heating the wafer from both above and below.

摘要翻译： PCT No.PCT / JP97 / 00477 Sec。 371日期：1998年8月14日 102（e）日期1998年8月14日PCT 1997年2月21日PCT PCT。 公开号WO97 / 31389 日期：1997年8月28日半导体晶片用热处理装置。 在处理容器内设置有待处理晶片的保持器。 上下加热器设置在保持器的上方和下方，以加热晶片。 每个加热器都连接在加热容器内。 供气头在上加热器和保持器之间提供淋浴形式的处理气体。 通过从上下两面加热晶片来提高晶片的表面温度的均匀性。

公开(公告)号：US5393349A

公开(公告)日：1995-02-28

申请号：US126755

申请日：1993-09-27

申请人： Wataru Ohkase

发明人： Wataru Ohkase

IPC分类号： C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/6838 ,  C23C16/4583 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/6875

摘要： The present invention relates to semiconductor wafers which have a through hole formed at their center portion. A processing apparatus provided with a conveyor means including a wafer holder having a holding protrusion which engages with this through hole implements oxidation and dispersion processing or CVD processing to a processing surface of a semiconductor wafer so that a semiconductor wafer can have heat treatment performed without accompanying film growth faults or heat distortion.

摘要翻译： 本发明涉及在其中心部分形成通孔的半导体晶片。 一种具有传送装置的处理装置，包括具有与该通孔接合的保持突起的晶片保持器，对半导体晶片的处理表面进行氧化分散处理或CVD处理，使得半导体晶片可以进行热处理而不伴随 薄膜生长缺陷或热变形。

公开(公告)号：US5763856A

公开(公告)日：1998-06-09

申请号：US607189

申请日：1996-02-26

申请人： Wataru Ohkase

发明人： Wataru Ohkase

IPC分类号： C23C16/48 ,  H05B3/66 ,  C23C16/00 ,  F27B5/14 ,  H05B3/46 ,  H05B3/62

CPC分类号： H05B3/66 ,  C23C16/481

摘要： A heat treatment apparatus comprising heat rays radiating means having a sheet-like heat rays radiating section, a process tube radiated and heated by heat rays shot from the sheet-like heat rays radiating section, and means for carrying a substrate, which has a surface of a semiconductor film and/or a dielectric film to be treated, into and out of the process tube, wherein said substrate is positioned to the sheet-like heat rays radiating section in the process tube in such a way that the incident angle of heat rays onto the peripheral portion of the treated surface of said substrate becomes smaller than 60.degree., so that heat rays absorptivity at the peripheral portion of said surface can be increased.

摘要翻译： 一种热处理设备，包括具有片状热射线辐射部分的热射线辐射装置，由片状热射线辐射部分射出的热射线辐射加热的处理管，以及用于承载基片的装置， 的待处理的半导体膜和/或介电膜进入和离开处理管，其中所述衬底被定位在处理管中的片状热射线辐射部分，使得入射角 在所述基板的被处理面的周边部分上的光线变得小于60°，从而可以增加在所述表面的周边部分的热线吸收率。

公开(公告)号：US5616264A

公开(公告)日：1997-04-01

申请号：US259180

申请日：1994-06-13

申请人： Katsuo Nishi ,  Kazuo Terada ,  Wataru Ohkase ,  Kenichi Yamaga

发明人： Katsuo Nishi ,  Kazuo Terada ,  Wataru Ohkase ,  Kenichi Yamaga

IPC分类号： C23C16/46 ,  C30B25/10 ,  C30B31/12 ,  G05D23/19 ,  H05B1/02

CPC分类号： C30B31/12 ,  C23C16/46 ,  C30B25/10 ,  G05D23/1934

摘要： A temperature control method in a rapid heat treatment apparatus comprising simulatively heating dummy wafers in a process tube and previously detecting and grasping by temperature sensors a wafer temperature rising pattern, a heater temperature rising pattern and an internal atmosphere temperature rising pattern, arranging wafers to be processed in the process tube, detecting a temperature of each zone and that of each heater element by the temperature sensors, upon heating the wafers, and controlling each heater element on the basis of the detected temperatures and the wafer, heater and internal atmosphere temperature rising patterns by a controller to rapidly and uniformly raise the temperature of each wafer until the temperature of the wafers in each zone reaches the intended one and becomes stable.

摘要翻译： 一种快速热处理装置中的温度控制方法，包括在处理管中模拟加热虚拟晶片并预先通过温度传感器检测和掌握晶片温度升高图案，加热器温度升高图案和内部气氛升温图案，将晶片设置为 在处理管中处理，在加热晶片时，通过温度传感器检测每个区域和每个加热器元件的温度，并且基于检测到的温度和晶片，加热器和内部气氛温度升高来控制每个加热器元件 通过控制器快速均匀地提高每个晶片的温度直到每个区域中的晶片的温度达到预期的温度并变得稳定。

公开(公告)号：USD326272S

公开(公告)日：1992-05-19

申请号：US301995

申请日：1989-01-25

申请人： Ken Nakao ,  Wataru Ohkase

设计人： Ken Nakao ,  Wataru Ohkase

公开(公告)号：US5520742A

公开(公告)日：1996-05-28

申请号：US203922

申请日：1994-03-01

申请人： Wataru Ohkase

发明人： Wataru Ohkase

IPC分类号： H01L21/31 ,  C23C16/46 ,  C23C16/54 ,  C30B25/10 ,  C30B31/12 ,  H01L21/00 ,  H01L21/324 ,  C23C16/00

CPC分类号： C23C16/463 ,  C23C16/46 ,  C23C16/54 ,  C30B25/10 ,  C30B31/12 ,  H01L21/67115

摘要： A heat shielding member is provided on an object-to-be-processed holder for loading/unloading an object to be processed to/from a thermal processing position. The heat shielding member can cover a space below the processing position. As a result, leakage of radiation heat from the processing position can be blocked, and an optimum temperature gradient at the processing position can be maintained. Accordingly the entire surface of the object to be processed can be efficiently thermally processed at uniform temperatures, and throughputs in the fabrication steps can be improved.

摘要翻译： 在被处理物体上设置有用于将加工对象物从加热处理位置进行加载/卸载的隔热部件。 隔热构件可以覆盖处理位置下方的空间。 结果，可以阻止来自处理位置的辐射热的泄漏，并且可以保持处理位置处的最佳温度梯度。 因此，可以在均匀的温度下有效地热处理待处理物体的整个表面，并且可以提高制造步骤中的生产率。

公开(公告)号：US4955775A

公开(公告)日：1990-09-11

申请号：US281756

申请日：1988-12-09

申请人： Wataru Ohkase ,  Seishiro Sato

发明人： Wataru Ohkase ,  Seishiro Sato

IPC分类号： C30B31/10 ,  C30B35/00

CPC分类号： C30B31/103 ,  C30B35/005 ,  Y10S414/138 ,  Y10S414/14

摘要： An apparatus is disclosed which can automatically load semiconductor wafers into a vertical type heat treatment furnace and unload treated semiconductor wafers out of the heat treatment furnace. The semiconductor wafer treating apparatus comprises exchange unit for exchanging the semiconductor wafers between the cassette and the wafer boat in a predetermined exchange position, transfer unit for allowing the wafer-held boat to be transported between the exchange position and a respective, vertical type heat treatment furnace and for allowing the transfer of the wafer boat to be effected between the transfer unit and the respective heat treatment furnace, and an elevator unit provided in the heat treatment furnace and adapted to receive the wafer boat from the transfer unit and to load the wafer boat into a vertically erect process tube and unload the wafer boat from the process tube.

摘要翻译： 公开了一种能够将半导体晶片自动加载到垂直型热处理炉中并将处理过的半导体晶片卸出热处理炉的装置。 半导体晶片处理装置包括用于在预定交换位置更换盒和晶片舟之间的半导体晶片的交换单元，用于允许晶片保持的船在交换位置和相应的垂直型热处理之间输送的转移单元 并且用于允许在转印单元和相应的热处理炉之间进行晶片舟的转移，以及设置在热处理炉中并适于从转印单元接收晶片舟并加载晶片的电梯单元 将船拖入垂直竖立的工艺管中，并从工艺管中卸下晶片舟。

公开(公告)号：US4952115A

公开(公告)日：1990-08-28

申请号：US315311

申请日：1989-02-24

申请人： Wataru Ohkase

发明人： Wataru Ohkase

IPC分类号： H01L21/687

CPC分类号： H01L21/68707 ,  Y10S414/138

摘要： A wafer support device including at least one support member shaped like a rotatable rod and having plural wafer support grooves formed at different pitches on the outer surface of the member in the longitudinal direction thereof. The frequencies of exchanging the support member with a new one or washing and cleaning it can be remarkably reduced and the productivity of semi-conductor wafers can be enhanced.

摘要翻译： 一种晶片支撑装置，其包括至少一个形状类似于可旋转杆的支撑构件，并且具有在所述构件的沿其纵向方向的外表面上以不同间距形成的多个晶片支撑槽。 可以显着地减少更换支撑构件的新的频率或清洗和清洁频率，并且可以提高半导体晶片的生产率。

公开(公告)号：USD326273S

公开(公告)日：1992-05-19

申请号：US301997

申请日：1989-01-25

申请人： Ken Nakao ,  Seishiro Sato ,  Wataru Ohkase

设计人： Ken Nakao ,  Seishiro Sato ,  Wataru Ohkase

公开(公告)号：US4943235A

公开(公告)日：1990-07-24

申请号：US275966

申请日：1988-11-25

申请人： Ken Nakao ,  Seishiro Sato ,  Wataru Ohkase

发明人： Ken Nakao ,  Seishiro Sato ,  Wataru Ohkase

IPC分类号： C30B31/00 ,  C30B33/00 ,  F27B17/00 ,  F27D7/06

CPC分类号： F27B17/0025 ,  C30B31/00 ,  C30B33/005 ,  F27D7/06

摘要： A heat-treating apparatus comprises a heat-treating furnace which include a process tube arranged so as to set its longitudinal direction vertically and having inlet and exhaust ports for a reaction gas, a heater arranged around the process tube, a capping member for capping an opening for allowing an heat-treating object to be loaded therethrough, which is formed in the lower end of the process tube, a case for covering a portion between the process tube and the capping member, and an exhaust nozzle, coupled to the the exhaust port formed in the process tube, for introducing the exhaust waste gas to the outside of the heat-treating apparatus. An exhaust nozzle is arranged in the case so as to introduce the waste gas leaking from between the process tube and the capping member to the outside of the heat-treating apparatus, thereby preventing the leaked gas from being diffused around the heat-treating apparatus.

摘要翻译： 一种热处理装置，包括：热处理炉，其包括处理管，其布置成使其纵向方向垂直设置，并具有用于反应气体的入口和排出口;围绕所述处理管布置的加热器;封盖构件， 形成在处理管的下端的用于使热处理物体通过其加载的开口，用于覆盖处理管和封盖构件之间的部分的壳体，以及与排气连接的排气喷嘴 形成在处理管中的端口，用于将排气废气引入热处理设备的外部。 排气喷嘴布置在壳体中，以将从处理管和封盖构件之间泄漏的废气引入热处理设备的外部，从而防止泄漏的气体在热处理设备周围扩散。