公开(公告)号：USD326273S

公开(公告)日：1992-05-19

申请号：US301997

申请日：1989-01-25

申请人： Ken Nakao ,  Seishiro Sato ,  Wataru Ohkase

设计人： Ken Nakao ,  Seishiro Sato ,  Wataru Ohkase

公开(公告)号：US4943235A

公开(公告)日：1990-07-24

申请号：US275966

申请日：1988-11-25

申请人： Ken Nakao ,  Seishiro Sato ,  Wataru Ohkase

发明人： Ken Nakao ,  Seishiro Sato ,  Wataru Ohkase

IPC分类号： C30B31/00 ,  C30B33/00 ,  F27B17/00 ,  F27D7/06

CPC分类号： F27B17/0025 ,  C30B31/00 ,  C30B33/005 ,  F27D7/06

摘要： A heat-treating apparatus comprises a heat-treating furnace which include a process tube arranged so as to set its longitudinal direction vertically and having inlet and exhaust ports for a reaction gas, a heater arranged around the process tube, a capping member for capping an opening for allowing an heat-treating object to be loaded therethrough, which is formed in the lower end of the process tube, a case for covering a portion between the process tube and the capping member, and an exhaust nozzle, coupled to the the exhaust port formed in the process tube, for introducing the exhaust waste gas to the outside of the heat-treating apparatus. An exhaust nozzle is arranged in the case so as to introduce the waste gas leaking from between the process tube and the capping member to the outside of the heat-treating apparatus, thereby preventing the leaked gas from being diffused around the heat-treating apparatus.

摘要翻译： 一种热处理装置，包括：热处理炉，其包括处理管，其布置成使其纵向方向垂直设置，并具有用于反应气体的入口和排出口;围绕所述处理管布置的加热器;封盖构件， 形成在处理管的下端的用于使热处理物体通过其加载的开口，用于覆盖处理管和封盖构件之间的部分的壳体，以及与排气连接的排气喷嘴 形成在处理管中的端口，用于将排气废气引入热处理设备的外部。 排气喷嘴布置在壳体中，以将从处理管和封盖构件之间泄漏的废气引入热处理设备的外部，从而防止泄漏的气体在热处理设备周围扩散。

公开(公告)号：US4938691A

公开(公告)日：1990-07-03

申请号：US272415

申请日：1988-11-17

申请人： Wataru Ohkase ,  Ken Nakao ,  Seishiro Sato

发明人： Wataru Ohkase ,  Ken Nakao ,  Seishiro Sato

IPC分类号： H01L21/22 ,  C30B31/10 ,  H01L21/31

CPC分类号： C30B31/103

摘要： A heat-treating apparatus includes a furnace for heat-treating wafers, installed so as to set its longitudinal direction vertically and having an opening which is formed in its lower end so as to allow a boat having semiconductor wafers mounted thereon to be loaded, a heat-insulating cylinder on which the boat is placed and which is adapted to keep the boat hot, a lifting unit for lifting and loading the boat and the heat-insulating cylinder into the furnace, and for lowering and unloading them from the furnace, a moving unit for pivoting the heat-insulating cylinder and retracting the cylinder from below the boat, and a handler unit for supporting and vertically moving the boat. After the wafers are heat-treated, the boat is moved downward by the lifting unit. The heat-insulating cylinder is retracted from below the boat by the moving unit while the boat is supported by the handler unit. Subsequently, the boat is further lowered by the handler unit so as to completely remove the boat from the furnace.

摘要翻译： 一种热处理设备包括一个热处理晶片的炉子，其安装成垂直设置其纵向并具有形成在其下端的开口，以允许其上安装有半导体晶片的船被加载， 将船放置在其上并适于保持船体热的绝热筒体，用于将船体和绝热筒体提升和装载到炉中并用于将其从炉子下降和卸载的提升单元， 移动单元，用于使绝热筒旋转并且从船下方缩回气缸;以及处理单元，用于支撑和垂直移动船。 在对晶片进行热处理之后，船由提升单元向下移动。 当船由搬运单元支撑时，绝热筒由移动单元从船的下方缩回。 随后，船尾由处理机构进一步下降，从而将船从炉中完全移开。

公开(公告)号：USD327078S

公开(公告)日：1992-06-16

申请号：US301994

申请日：1989-01-25

申请人： Ken Nakao ,  Seishiro Sato ,  Wataru Ohkase

设计人： Ken Nakao ,  Seishiro Sato ,  Wataru Ohkase

公开(公告)号：US4955775A

公开(公告)日：1990-09-11

申请号：US281756

申请日：1988-12-09

申请人： Wataru Ohkase ,  Seishiro Sato

发明人： Wataru Ohkase ,  Seishiro Sato

IPC分类号： C30B31/10 ,  C30B35/00

CPC分类号： C30B31/103 ,  C30B35/005 ,  Y10S414/138 ,  Y10S414/14

摘要： An apparatus is disclosed which can automatically load semiconductor wafers into a vertical type heat treatment furnace and unload treated semiconductor wafers out of the heat treatment furnace. The semiconductor wafer treating apparatus comprises exchange unit for exchanging the semiconductor wafers between the cassette and the wafer boat in a predetermined exchange position, transfer unit for allowing the wafer-held boat to be transported between the exchange position and a respective, vertical type heat treatment furnace and for allowing the transfer of the wafer boat to be effected between the transfer unit and the respective heat treatment furnace, and an elevator unit provided in the heat treatment furnace and adapted to receive the wafer boat from the transfer unit and to load the wafer boat into a vertically erect process tube and unload the wafer boat from the process tube.

摘要翻译： 公开了一种能够将半导体晶片自动加载到垂直型热处理炉中并将处理过的半导体晶片卸出热处理炉的装置。 半导体晶片处理装置包括用于在预定交换位置更换盒和晶片舟之间的半导体晶片的交换单元，用于允许晶片保持的船在交换位置和相应的垂直型热处理之间输送的转移单元 并且用于允许在转印单元和相应的热处理炉之间进行晶片舟的转移，以及设置在热处理炉中并适于从转印单元接收晶片舟并加载晶片的电梯单元 将船拖入垂直竖立的工艺管中，并从工艺管中卸下晶片舟。

公开(公告)号：US4950870A

公开(公告)日：1990-08-21

申请号：US273972

申请日：1988-11-21

申请人： Hiroyuki Mitsuhashi ,  Seishiro Sato ,  Wataru Ohkase

发明人： Hiroyuki Mitsuhashi ,  Seishiro Sato ,  Wataru Ohkase

IPC分类号： C30B25/10 ,  C30B31/12 ,  F27B17/00 ,  F27D11/02 ,  G05D23/22

CPC分类号： F27B17/0025 ,  C30B25/10 ,  C30B31/12 ,  F27D11/02 ,  G05D23/1934 ,  G05D23/22

摘要： A heat-treating apparatus includes a process tube accommodating an object to be heat-treated therein, and a plurality of independent heaters including at least three heaters arranged at both end portions and the central portion of a side wall of the process tube, so as to surround the process tube and, the heating temperatures of the individual heaters being freely adjustable. In this heat-treating apparatus, no direct heat transfer is caused between the heaters, so that the heating temperature of the heater at each end portion of the process tube can be adjusted to a high value, without entailing such an uneven temperature distribution as is caused in the case of a conventional heat-treating apparatus. Thus, uniform temperature distribution can be attained in an area covering the same range for the conventional apparatus, even though the heaters at both end portions are reduced in length.

摘要翻译： 热处理装置包括容纳待热处理物体的处理管和多个独立的加热器，其包括布置在处理管的侧壁的两个端部和中心部分处的至少三个加热器，以便 围绕加工管，并且各个加热器的加热温度可自由调节。 在该热处理装置中，不会在加热器之间产生直接的热传递，所以能够将处理管的各端部的加热器的加热温度调整为高值，而不会产生不均匀的温度分布 在常规热处理装置的情况下引起。 因此，即使两端部的加热器的长度减小，也能够在覆盖同一范围的区域中实现均匀的温度分布。

公开(公告)号：USD326272S

公开(公告)日：1992-05-19

申请号：US301995

申请日：1989-01-25

申请人： Ken Nakao ,  Wataru Ohkase

设计人： Ken Nakao ,  Wataru Ohkase

公开(公告)号：US6111225A

公开(公告)日：2000-08-29

申请号：US125336

申请日：1998-08-14

申请人： Wataru Ohkase ,  Kazutsugu Aoki ,  Masaaki Hasei

发明人： Wataru Ohkase ,  Kazutsugu Aoki ,  Masaaki Hasei

IPC分类号： H01L21/00 ,  F27B5/14

CPC分类号： H01L21/67109

摘要： A thermal processing apparatus for a semi-conductor wafer. A holder is provided within a processing vessel on which the wafer to be processed is placed. Upper and lower heaters are provided above and below the holder in order to heat the wafer. Each of the heaters are attached within heating vessels. A gas supply head supplies a processing gas in a shower form between the upper heater and the holder. The uniformity of the surface temperature of the wafer is improved by heating the wafer from both above and below.

摘要翻译： PCT No.PCT / JP97 / 00477 Sec。 371日期：1998年8月14日 102（e）日期1998年8月14日PCT 1997年2月21日PCT PCT。 公开号WO97 / 31389 日期：1997年8月28日半导体晶片用热处理装置。 在处理容器内设置有待处理晶片的保持器。 上下加热器设置在保持器的上方和下方，以加热晶片。 每个加热器都连接在加热容器内。 供气头在上加热器和保持器之间提供淋浴形式的处理气体。 通过从上下两面加热晶片来提高晶片的表面温度的均匀性。

公开(公告)号：US5393349A

公开(公告)日：1995-02-28

申请号：US126755

申请日：1993-09-27

申请人： Wataru Ohkase

发明人： Wataru Ohkase

IPC分类号： C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/6838 ,  C23C16/4583 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/6875

摘要： The present invention relates to semiconductor wafers which have a through hole formed at their center portion. A processing apparatus provided with a conveyor means including a wafer holder having a holding protrusion which engages with this through hole implements oxidation and dispersion processing or CVD processing to a processing surface of a semiconductor wafer so that a semiconductor wafer can have heat treatment performed without accompanying film growth faults or heat distortion.

摘要翻译： 本发明涉及在其中心部分形成通孔的半导体晶片。 一种具有传送装置的处理装置，包括具有与该通孔接合的保持突起的晶片保持器，对半导体晶片的处理表面进行氧化分散处理或CVD处理，使得半导体晶片可以进行热处理而不伴随 薄膜生长缺陷或热变形。

公开(公告)号：US5763856A

公开(公告)日：1998-06-09

申请号：US607189

申请日：1996-02-26

申请人： Wataru Ohkase

发明人： Wataru Ohkase

IPC分类号： C23C16/48 ,  H05B3/66 ,  C23C16/00 ,  F27B5/14 ,  H05B3/46 ,  H05B3/62

CPC分类号： H05B3/66 ,  C23C16/481

摘要： A heat treatment apparatus comprising heat rays radiating means having a sheet-like heat rays radiating section, a process tube radiated and heated by heat rays shot from the sheet-like heat rays radiating section, and means for carrying a substrate, which has a surface of a semiconductor film and/or a dielectric film to be treated, into and out of the process tube, wherein said substrate is positioned to the sheet-like heat rays radiating section in the process tube in such a way that the incident angle of heat rays onto the peripheral portion of the treated surface of said substrate becomes smaller than 60.degree., so that heat rays absorptivity at the peripheral portion of said surface can be increased.

摘要翻译： 一种热处理设备，包括具有片状热射线辐射部分的热射线辐射装置，由片状热射线辐射部分射出的热射线辐射加热的处理管，以及用于承载基片的装置， 的待处理的半导体膜和/或介电膜进入和离开处理管，其中所述衬底被定位在处理管中的片状热射线辐射部分，使得入射角 在所述基板的被处理面的周边部分上的光线变得小于60°，从而可以增加在所述表面的周边部分的热线吸收率。