公开(公告)号：US08889553B2

公开(公告)日：2014-11-18

申请号：US12807898

申请日：2010-09-16

Applicant: Kang-Hua Lee ,  Wen-Cheng Liu

Inventor： Kang-Hua Lee ,  Wen-Cheng Liu

IPC: H01L21/461 ,  H01L21/302

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09G1/04 ,  H01L21/304 ,  H01L21/3212 ,  H01L21/76898

Abstract: A method for polishing Through-Silicon Via (TSV) wafers is provided. The method comprises a step of subjecting the surface of a TSV wafer to a polishing treatment with a polishing composition containing an organic alkaline compound, an oxidizing agent selected from sodium chlorite and/or potassium bromate, silicon oxide abrasive particles, and a solvent to simultaneously remove Si and conductive materials at their respective removal rates. By using the method of this invention, Si and conductive materials can be simultaneously polished at higher removal rates to significantly save the necessary working-hour costs for polishing TSV wafers. A polishing composition used in the above method is also provided.

Abstract translation: 提供了一种用于抛光透明硅（TSV）晶片的方法。 该方法包括使用含有有机碱性化合物，选自亚氯酸钠和/或溴酸钾的氧化剂，氧化硅磨料颗粒和溶剂的抛光组合物对TSV晶片的表面进行抛光处理的步骤 以各自的去除速率除去Si和导电材料。 通过使用本发明的方法，可以以更高的去除速率同时抛光Si和导电材料，以显着地节省抛光TSV晶片所需的工作时间成本。 还提供了用于上述方法的抛光组合物。

公开(公告)号：US08063006B2

公开(公告)日：2011-11-22

申请号：US11436749

申请日：2006-05-18

Applicant: Chien Ching Chen ,  Wen Cheng Liu ,  Jing-Chiuan Shiue ,  Teng Yan Huo

Inventor： Chien Ching Chen ,  Wen Cheng Liu ,  Jing-Chiuan Shiue ,  Teng Yan Huo

IPC: C11D1/00

CPC classification number: C11D11/0047 ,  C11D7/3218 ,  C11D7/3281

Abstract: The invention relates to an aqueous cleaning composition for wafers with copper wires that have been treated by chemical mechanical planarization in an integrated circuit processing, comprising 0.1 to 15 wt % of a nitrogen-containing heterocyclic organic base, 0.1 to 35 wt % of an alcohol amine and water. Upon contact with copper-containing semiconductor wafers that have been treated by chemical mechanical planarization for an effective period of time, the aqueous cleaning composition can effectively remove residual contaminants from the surfaces of the wafers, and simultaneously provide the copper-containing semiconductor wafers with a better surface roughness.

Abstract translation: 本发明涉及在集成电路加工中通过化学机械平面化处理的具有铜线的晶片的水性清洁组合物，其包含0.1至15重量％的含氮杂环有机碱，0.1至35重量％的醇 胺和水。 在通过化学机械平面化处理有效时间的含铜半导体晶片接触之后，水性清洁组合物可以有效地从晶片表面去除残留的污染物，同时向含铜半导体晶片提供 更好的表面粗糙度。

公开(公告)号：US20110070736A1

公开(公告)日：2011-03-24

申请号：US12807898

申请日：2010-09-16

Applicant: Kang-Hua Lee ,  Wen-Cheng Liu

Inventor： Kang-Hua Lee ,  Wen-Cheng Liu

IPC: H01L21/302 ,  C09K13/00

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09G1/04 ,  H01L21/304 ,  H01L21/3212 ,  H01L21/76898

Abstract: A method for polishing Through-Silicon Via (TSV) wafers is provided. The method comprises a step of subjecting the surface of a TSV wafer to a polishing treatment with a polishing composition containing an organic alkaline compound, an oxidizing agent selected from sodium chlorite and/or potassium bromate, silicon oxide abrasive particles, and a solvent to simultaneously remove Si and conductive materials at their respective removal rates. By using the method of this invention, Si and conductive materials can be simultaneously polished at higher removal rates to significantly save the necessary working-hour costs for polishing TSV wafers. A polishing composition used in the above method is also provided.

Abstract translation: 提供了一种用于抛光透明硅（TSV）晶片的方法。 该方法包括使用含有有机碱性化合物，选自亚氯酸钠和/或溴酸钾的氧化剂，氧化硅磨料颗粒和溶剂的抛光组合物对TSV晶片的表面进行抛光处理的步骤同时 以各自的去除速率除去Si和导电材料。 通过使用本发明的方法，可以以更高的去除速率同时抛光Si和导电材料，以显着地节省抛光TSV晶片所需的工作时间成本。 还提供了用于上述方法的抛光组合物。

公开(公告)号：US07550092B2

公开(公告)日：2009-06-23

申请号：US11454981

申请日：2006-06-19

Applicant: Hui-Fang Hou ,  Wen-Cheng Liu ,  Pao-Cheng Chen ,  Yen-Liang Chen ,  Jui-Ching Chen

Inventor： Hui-Fang Hou ,  Wen-Cheng Liu ,  Pao-Cheng Chen ,  Yen-Liang Chen ,  Jui-Ching Chen

IPC: C09K13/00

CPC classification number: C09K3/1463

Abstract: A chemical mechanical polishing composition includes: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor, and water. The metal residue inhibitor is selected from the group of compounds having the following formulas: and combinations thereof, wherein R1, R2, R3, and R4 are independently selected from H, C1-C6 alkyl, C2-C6 alkenyl, and C2-C6 alkylidyne; and R5, R6, R7, R8, R9, and R10 are independently selected from H and C1-C6 alkyl.

Abstract translation: 化学机械抛光组合物包括：磨料组分，腐蚀抑制剂，表面活性剂，二酸化合物，金属残渣抑制剂和水。 金属残基抑制剂选自具有下式的化合物及其组合，其中R 1，R 2，R 3和R 4独立地选自H，C 1 -C 6烷基，C 2 -C 6烯基和C 2 -C 6亚烷基 ; 并且R 5，R 6，R 7，R 8，R 9和R 10独立地选自H和C 1 -C 6烷基。

公开(公告)号：US20090036343A1

公开(公告)日：2009-02-05

申请号：US12048277

申请日：2008-03-14

Applicant: Chien Ching Chen ,  Wen Cheng Liu ,  Tsung Hsien Chuang ,  Jui Ching Chen

Inventor： Chien Ching Chen ,  Wen Cheng Liu ,  Tsung Hsien Chuang ,  Jui Ching Chen

IPC: C11D7/32

CPC classification number: C11D11/0047 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  H01L21/02074

Abstract: The invention relates to an aqueous cleaning composition for use in a cleaning process during or after a chemical mechanical planarization for a copper integrated circuit processing, comprising 0.05 to 20 wt % of a nitrogen-containing heterocyclic organic base, 0.05 to 50 wt % of an alcohol amine, 0.01-10 wt % of a quaternary ammonium hydroxide, and water. When used during or after the planarization process, the inventive cleaning composition of the invention can effectively remove residual contaminants from the surfaces of the wafers and simultaneously maintain a good surface roughness of the wafers.

Abstract translation: 本发明涉及一种用于铜集成电路加工的化学机械平面化期间或之后的清洗工艺中的含水清洗组合物，其包含0.05-20重量％的含氮杂环有机碱，0.05至50重量％ 醇胺，0.01-10重量％的季铵氢氧化物和水。 当在平坦化过程中或之后使用时，本发明的本发明的清洁组合物可以有效地从晶片的表面去除残留的污染物并且同时保持晶片的良好的表面粗糙度。

公开(公告)号：US07466693B2

公开(公告)日：2008-12-16

申请号：US11044924

申请日：2005-01-26

Applicant: Erh-Jen Hou ,  Chun-Wei Lien ,  Guan-Hung Yeh ,  Er-Ta Ma ,  Ming-Shun Hsiao ,  Wen-Cheng Liu

Inventor： Erh-Jen Hou ,  Chun-Wei Lien ,  Guan-Hung Yeh ,  Er-Ta Ma ,  Ming-Shun Hsiao ,  Wen-Cheng Liu

IPC: H04L12/28 ,  H04L12/66 ,  H04M11/00 ,  G06F15/16

CPC classification number: H04M7/003 ,  H04L29/06027 ,  H04L29/1216 ,  H04L61/157 ,  H04L65/1069 ,  H04L65/4007 ,  H04L67/02

Abstract: A global communication internet telephone system is a new software Web Call structure, in which the system user only requires a computer with Windows 98® or above, a duplex sound card, a display interface and internet access, and logging directly into a GTD Web 800 web page thereafter, receiving a automatic number dispensing function and GTD automatic number skipping function. The characteristics of the system lies in that a signature which can be linked to the GTD Web 800 web pages for browsing is added into an e-mail of a user computer. As long as an e-mail receiver clicks on the signature file of the e-mail, he can be linked to the web pages and conduct a VoIP dialog with the e-mail sender. If a computer at a sending side is not powered on the sending side can freely choose whether to forward incoming calls to a designated cellular phone or local phone by automatically appointing a number.

Abstract translation: 全球通信互联网电话系统是一种新的软件Web呼叫结构，其中系统用户只需要具有Windows 98（R）或更高版本的计算机，双面声卡，显示接口和互联网接入，并直接记录到GTD Web 800网页之后，接收到自动号码分配功能和GTD自动跳码功能。 该系统的特征在于可以将与GTD Web 800网页链接的用于浏览的签名添加到用户计算机的电子邮件中。 只要电子邮件接收者点击电子邮件的签名文件，他就可以链接到网页，并与电子邮件发件人进行VoIP对话。 如果发送侧的计算机未通电，发送端可以通过自动指定号码自由选择是否将呼入转接到指定的手机或本地电话。

公开(公告)号：US20080096470A1

公开(公告)日：2008-04-24

申请号：US11892720

申请日：2007-08-27

Applicant: Hui-Fang Hou ,  Wen-Cheng Liu ,  Yen-Liang Chen ,  Jui-Ching Chen

Inventor： Hui-Fang Hou ,  Wen-Cheng Liu ,  Yen-Liang Chen ,  Jui-Ching Chen

IPC: B24B29/02

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212

Abstract: A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are surface modified with a surface charge modifier and that have potassium ions attached thereto. A method for preparing the chemical mechanical polishing slurry and a chemical mechanical polishing method using the chemical mechanical polishing slurry are also disclosed.

Abstract translation: 公开了一种用于抛光铜层而不过度或破坏性地在铜层下方抛光阻挡层的化学机械抛光浆料，并且包括酸，表面活性剂和具有用表面电荷调节剂表面​​改性的二氧化硅抛光颗粒的硅溶胶， 其具有附着的钾离子。 还公开了一种制备化学机械抛光浆料的方法和使用化学机械抛光浆料的化学机械抛光方法。

公开(公告)号：US20070290165A1

公开(公告)日：2007-12-20

申请号：US11454981

申请日：2006-06-19

Applicant: Hui-Fang Hou ,  Wen-Cheng Liu ,  Pao-Cheng Chen ,  Yen-Liang Chen ,  Jui-Ching Chen

Inventor： Hui-Fang Hou ,  Wen-Cheng Liu ,  Pao-Cheng Chen ,  Yen-Liang Chen ,  Jui-Ching Chen

IPC: C09K13/00

CPC classification number: C09K3/1463

Abstract: A chemical mechanical polishing composition includes: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor, and water. The metal residue inhibitor is selected from the group of compounds having the following formulas: and combinations thereof, wherein R1, R2, R3, and R4 are independently selected from H, C1-C6 alkyl, C2-C6 alkenyl, and C2-C6 alkylidyne; and R5, R6, R7, R8, R9, and R10 are independently selected from H and C1-C6 alkyl.

Abstract translation: 化学机械抛光组合物包括：磨料组分，缓蚀剂，表面活性剂，二酸化合物，金属残渣抑制剂和水。 金属残留抑制剂选自具有下式的化合物及其组合，其中R 1，R 2，R 3， R 4和R 4独立地选自H，C 1 -C 6烷基，C 2 -C 3烷基， C 1 -C 6亚烷基和C 2 -C 6亚烷基; 和R 5，R 6，R 7，R 8，R 9， R 10和R 10独立地选自H和C 1 -C 6烷基。

公开(公告)号：US20060069781A1

公开(公告)日：2006-03-30

申请号：US10937231

申请日：2004-09-08

Applicant: Erh-Jen Hou ,  Chun-Wei Lien ,  Guan-Hung Yeh ,  Er-Ta Ma ,  Ming-Shun Hsiao ,  Wen-Cheng Liu

Inventor： Erh-Jen Hou ,  Chun-Wei Lien ,  Guan-Hung Yeh ,  Er-Ta Ma ,  Ming-Shun Hsiao ,  Wen-Cheng Liu

IPC: G06F15/16

CPC classification number: H04L29/06027 ,  H04L67/02 ,  H04L67/34

Abstract: A global communication internet telephone system and method is a new software Web Call structure, wherein the system user only requires a computer with Windows 98 or above, a duplex sound card, a display interface and internet access, and logging directly into a GTD Web 800 wed page thereafter, receiving a automatic number dispensing function and GTD automatic number skipping function.

Abstract translation: 全球通信互联网电话系统和方法是一种新的软件Web呼叫结构，其中系统用户只需要具有Windows 98或更高版本的计算机，双工声卡，显示接口和互联网接入，并直接登录到GTD Web 800 此后接收到自动号码分配功能和GTD自动跳码功能。

公开(公告)号：US20170149230A1

公开(公告)日：2017-05-25

申请号：US15358635

申请日：2016-11-22

Applicant: Wen-Cheng LIU

Inventor： Wen-Cheng LIU

IPC: H02G11/02 ,  H01B7/06 ,  G02B6/44 ,  F16L3/26

CPC classification number: H02G11/02 ,  F16L3/26 ,  G02B6/4457 ,  H01B7/06

Abstract: The present invention relates to a self winding linear unit. The linear unit is assembled from a center protruding body, a left-side protruding portion, and a right-side protruding portion, wherein the left-side protruding portion and the right-side protruding portion are respectively configured on the left and right sides of the center protruding body. Moreover, a spacing between the left and right-side protruding portions on a bottom portion of the center protruding body defines a holding space. When the center protruding body on one end of the linear unit is curved round and embedded in the holding space of its own main body, a self roll-up and winding cable arranger is achieved. When the center protruding body on one end of the linear unit is embedded in the holding space of another linear unit, then a plurality of the linear units may be stacked to form a tiered cable arranger.