公开(公告)号：US08891299B2

公开(公告)日：2014-11-18

申请号：US13571153

申请日：2012-08-09

申请人： Ting-Chang Chang ,  Chih-Hao Dai ,  Fu-Yen Jian ,  Wen-Hung Lo ,  Shih-Chieh Chang ,  Ying-Lang Wang

发明人： Ting-Chang Chang ,  Chih-Hao Dai ,  Fu-Yen Jian ,  Wen-Hung Lo ,  Shih-Chieh Chang ,  Ying-Lang Wang

IPC分类号： G11C11/34 ,  H01L29/788 ,  H01L29/792 ,  H01L21/28 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10

CPC分类号： G11C16/10 ,  G11C11/5621 ,  G11C16/0475 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/7887 ,  H01L29/7923

摘要： A method for performing a programming operation to a first memory bit and a second memory bit of a device is described. The method includes applying a pulse train voltage to a metal gate of the device and grounding a substrate of the device. By floating/grounding a drain of the device and/or by floating/grounding the source of the device, the first memory and the second memory bit are programmed. The pulse train voltage includes 10 to 1000 pulses. One pulse includes a peak voltage and a base voltage. The peak voltage ranges from 0.5 V to 10 V. A duration of the peak voltage ranges from 1 nanosecond to 1 millisecond. The base voltage is 0 V. A duration of the base voltage ranges from 1 nanosecond to 1 millisecond.

摘要翻译： 描述了用于对设备的第一存储器位和第二存储器位执行编程操作的方法。 该方法包括将脉冲串电压施加到该器件的金属栅极并将器件的衬底接地。 通过浮置/接地设备的漏极和/或通过浮置/接地设备的源，第一存储器和第二存储器位被编程。 脉冲串电压包括10到1000个脉冲。 一个脉冲包括峰值电压和基极电压。 峰值电压范围为0.5V至10V。峰值电压的持续时间范围为1纳秒至1毫秒。 基极电压为0V。基极电压的持续时间范围为1纳秒至1毫秒。

公开(公告)号：US20140043899A1

公开(公告)日：2014-02-13

申请号：US13571153

申请日：2012-08-09

申请人： Ting-Chang Chang ,  Chih-Hao Dai ,  Fu-Yen Jian ,  Wen-Hung Lo ,  Shih-Chieh Chang ,  Ying-Lang Wang

发明人： Ting-Chang Chang ,  Chih-Hao Dai ,  Fu-Yen Jian ,  Wen-Hung Lo ,  Shih-Chieh Chang ,  Ying-Lang Wang

IPC分类号： G11C16/10

CPC分类号： G11C16/10 ,  G11C11/5621 ,  G11C16/0475 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/7887 ,  H01L29/7923

摘要： A method for performing a programming operation to a first memory bit and a second memory bit of a device is described. The method includes applying a pulse train voltage to a metal gate of the device and grounding a substrate of the device. By floating/grounding a drain of the device and/or by floating/grounding the source of the device, the first memory and the second memory bit are programmed. The pulse train voltage includes 10 to 1000 pulses. One pulse includes a peak voltage and a base voltage. The peak voltage ranges from 0.5 V to 10 V. A duration of the peak voltage ranges from 1 nanosecond to 1 millisecond. The base voltage is 0 V. A duration of the base voltage ranges from 1 nanosecond to 1 millisecond.

摘要翻译： 描述了用于对设备的第一存储器位和第二存储器位执行编程操作的方法。 该方法包括将脉冲串电压施加到该器件的金属栅极并将器件的衬底接地。 通过浮置/接地设备的漏极和/或通过浮置/接地设备的源，第一存储器和第二存储器位被编程。 脉冲串电压包括10到1000个脉冲。 一个脉冲包括峰值电压和基极电压。 峰值电压范围为0.5V至10V。峰值电压的持续时间范围为1纳秒至1毫秒。 基极电压为0V。基极电压的持续时间范围为1纳秒至1毫秒。

公开(公告)号：US20130293477A1

公开(公告)日：2013-11-07

申请号：US13871004

申请日：2013-04-26

申请人： Yi-Fu Chen ,  Yu-Hsu Pei ,  Zhi-Sheng Lin ,  Wei-Han Hu ,  Wei-Jung Chen ,  Wen-Hung Lo ,  Hsin-pei Tsai ,  Ming-Che Weng ,  Li-Wei Chen ,  Po-Hsien Yang ,  Chun-Sheng Chen

发明人： Yi-Fu Chen ,  Yu-Hsu Pei ,  Zhi-Sheng Lin ,  Wei-Han Hu ,  Wei-Jung Chen ,  Wen-Hung Lo ,  Hsin-pei Tsai ,  Ming-Che Weng ,  Li-Wei Chen ,  Po-Hsien Yang ,  Chun-Sheng Chen

IPC分类号： G06F3/02

CPC分类号： G06F3/02 ,  G06F1/169 ,  G06F3/021 ,  G06F2203/04101 ,  G06F2203/04108

摘要： An electronic apparatus and an operation method thereof are provided. The electronic apparatus has a sensor module. A space operation mode is enabled when an operation object is detected in a sensor space by the sensor module. A controlling function corresponding to one of a plurality of using spaces divided from the sensor space in which the operation object is located is enabled. Movement information of the operation object is detected by the sensor module, and an operation action corresponding to the enabled controlling function is executed.

摘要翻译： 提供一种电子设备及其操作方法。 电子设备具有传感器模块。 当传感器模块在传感器空间中检测到操作对象时，启用空间操作模式。 使能与从操作对象所在的传感器空间分开的多个使用空间中的一个对应的控制功能。 由传感器模块检测操作对象的运动信息，并且执行与使能控制功能相对应的操作动作。