公开(公告)号：US5068867A

公开(公告)日：1991-11-26

申请号：US439728

申请日：1989-11-20

申请人： Thomas C. Hasenberg ,  William J. Gignac

发明人： Thomas C. Hasenberg ,  William J. Gignac

IPC分类号： H01S5/00 ,  G02F3/02 ,  H01L33/06 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01L33/06 ,  B82Y20/00 ,  G02F3/026 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3425 ,  H01S5/34313

摘要： A short-period, strained superlattice structure includes two coupled quantum well layers separated by a barrier layer. The quantum well layers are preferably formed of indium arsenide and are 2 monolayers thick. The barrier layer is preferably formed of gallium arsenide and is 2 to 10 monolayers thick. The quantum well layers have a lattice parameter or constant which is sufficiently different from that of the barrier layer that a permanent strain exists in the surface. The layers are sufficiently thin that they remain in an unrelaxed state, thereby precluding the formation of misfit dislocations. As an alternative, the superlattice structure may include more than two quantum well layers, each adjacent two of which are separated by a barrier layer. As another alternative, a plurality of structures, each including two quantum well layers separated by a barrier laser may be provided, with each structure separated by a gallium arsenide buffer layer on the order of 170 to 204 angstroms thick. Where incorporated into a semiconductor diode layer as an active region, the strained superlattice structure is capable of exhibiting optical bistability.

公开(公告)号：US5185754A

公开(公告)日：1993-02-09

申请号：US737194

申请日：1991-07-29

申请人： Richard R. Craig ,  David F. Welch ,  Erik P. Zucker ,  Donald R. Scifres ,  William J. Gignac

发明人： Richard R. Craig ,  David F. Welch ,  Erik P. Zucker ,  Donald R. Scifres ,  William J. Gignac

IPC分类号： H01S5/062 ,  H01S5/10 ,  H01S5/12 ,  H01S5/16

CPC分类号： H01S5/1021 ,  H01S5/06213 ,  H01S5/10 ,  H01S5/12 ,  H01S5/16

摘要： A laser diode construction having internal reflectors within the laser cavity to provide a stable spectral mode of laser operation. The laser includes a plurality of contiguous semiconductor layers disposed on a substrate to form a semiconductor body with at least one layer forming an active region. Electrically conductive contacts bias the heterostructure to inject current into the active region and produce lightwaves. Feedback means define two or more tandem resonant optical cavities to achieve lasing operation. The feedback means includes at least one internal light reflector within the semiconductor body. In a preferred embodiment, a pair of spaced apart internal reflectors are provided with the region between the pair also being electrically pumped to define an active internal etalon. Other embodiments have multiple periodic reflectors or combine internal reflectors with feedback gratings or passive windows at the end facets of the body.

摘要翻译： 激光二极管结构在激光腔内具有内部反射器，以提供激光器操作的稳定光谱模式。 激光器包括设置在基板上的多个连续的半导体层，以形成具有形成有源区的至少一个层的半导体本体。 导电触点偏置异质结构以将电流注入有源区域并产生光波。 反馈意味着定义两个或多个串联谐振光学腔以实现激光操作。 反馈装置包括半导体本体内的至少一个内部光反射器。 在优选实施例中，设置一对间隔开的内部反射器，其间的区域也被电泵浦以限定活动的内标准器。 其他实施例具有多个周期性反射器或将内部反射器与身体的端面处的反馈光栅或无源窗口组合。